1
|
Ryu Y, Jeong J, Suh J, Kim J, Choi H, Cha J. Utilizing Gate-Controlled Supercurrent for All-Metallic Tunable Superconducting Microwave Resonators. NANO LETTERS 2024; 24:1223-1230. [PMID: 38232153 DOI: 10.1021/acs.nanolett.3c04080] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/19/2024]
Abstract
Hybridizing a microwave mode with a quantum state requires precise frequency matching of a superconducting microwave resonator and the corresponding quantum object. However, fabrication always brings imperfections in geometry and material properties, causing deviations from the desired operating frequencies. An effective and universal strategy for their resonant coupling is to tune the frequency of a resonator, as quantum states like phonons are hardly tunable. Here, we demonstrate gate-tunable, titanium-nitride (TiN)-based superconducting resonators by implementing a nanowire inductor whose kinetic inductance is tuned via the gate-controlled supercurrent (GCS) effect. We investigate their responses for different gate biases and observe 4% (∼150 MHz) frequency tuning with decreasing internal quality factors. We also perform temperature-controlled experiments to support phonon-related mechanisms in the GCS effect and the resonance tuning. The GCS effect-based method proposed in this study provides an effective route for locally tunable resonators that can be employed in various hybrid quantum devices.
Collapse
Affiliation(s)
- Younghun Ryu
- Quantum Technology Institute, Korea Research Institute of Standards and Science (KRISS), Daejeon 34113, South Korea
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, South Korea
| | - Jinhoon Jeong
- Quantum Technology Institute, Korea Research Institute of Standards and Science (KRISS), Daejeon 34113, South Korea
| | - Junho Suh
- Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang 37673, South Korea
| | - Jihwan Kim
- Agency For Defense Development (ADD), Daejeon 34186, South Korea
| | - Hyoungsoon Choi
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, South Korea
- Graduate School of Quantum Science and Technology, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, South Korea
| | - Jinwoong Cha
- Quantum Technology Institute, Korea Research Institute of Standards and Science (KRISS), Daejeon 34113, South Korea
- Graduate School of Quantum Science and Technology, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, South Korea
| |
Collapse
|
2
|
Yu S, Chen L, Pan Y, Wang Y, Zhang D, Wu G, Fan X, Liu X, Wu L, Zhang L, Peng W, Ren J, Wang Z. Gate-Tunable Critical Current of the Three-Dimensional Niobium Nanobridge Josephson Junction. NANO LETTERS 2023; 23:8043-8049. [PMID: 37592211 DOI: 10.1021/acs.nanolett.3c02015] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/19/2023]
Abstract
Recent studies have shown that the critical currents of several metallic superconducting nanowires and Dayem bridges can be locally tuned by using a gate voltage (Vg). Here, we report a gate-tunable Josephson junction structure constructed from a three-dimensional (3D) niobium nanobridge junction (NBJ) with a voltage gate on top. Measurements up to 6 K showed that the critical current of this structure can be tuned to zero by increasing Vg. The critical gate voltage was reduced to 16 V and may possibly be reduced further by reducing the thickness of the insulation layer between the gate and the NBJ. Furthermore, the flux modulation generated by Josephson interference of two parallel 3D NBJs can also be tuned by using Vg in a similar manner. Therefore, we believe that this gate-tunable Josephson junction structure is promising for superconducting circuit fabrication at high integration levels.
Collapse
Affiliation(s)
- Shujie Yu
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology(SIMIT), Chinese Academy of Sciences, Shanghai 200050, China
- University of the Chinese Academy of Sciences, Beijing 100049, China
| | - Lei Chen
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology(SIMIT), Chinese Academy of Sciences, Shanghai 200050, China
- University of the Chinese Academy of Sciences, Beijing 100049, China
| | - Yinping Pan
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology(SIMIT), Chinese Academy of Sciences, Shanghai 200050, China
| | - Yue Wang
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology(SIMIT), Chinese Academy of Sciences, Shanghai 200050, China
- University of the Chinese Academy of Sciences, Beijing 100049, China
| | - Denghui Zhang
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology(SIMIT), Chinese Academy of Sciences, Shanghai 200050, China
- University of the Chinese Academy of Sciences, Beijing 100049, China
| | - Guangting Wu
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology(SIMIT), Chinese Academy of Sciences, Shanghai 200050, China
- University of the Chinese Academy of Sciences, Beijing 100049, China
| | - Xinxin Fan
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology(SIMIT), Chinese Academy of Sciences, Shanghai 200050, China
- University of the Chinese Academy of Sciences, Beijing 100049, China
| | - Xiaoyu Liu
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology(SIMIT), Chinese Academy of Sciences, Shanghai 200050, China
| | - Ling Wu
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology(SIMIT), Chinese Academy of Sciences, Shanghai 200050, China
| | - Lu Zhang
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology(SIMIT), Chinese Academy of Sciences, Shanghai 200050, China
- University of the Chinese Academy of Sciences, Beijing 100049, China
| | - Wei Peng
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology(SIMIT), Chinese Academy of Sciences, Shanghai 200050, China
- University of the Chinese Academy of Sciences, Beijing 100049, China
| | - Jie Ren
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology(SIMIT), Chinese Academy of Sciences, Shanghai 200050, China
- University of the Chinese Academy of Sciences, Beijing 100049, China
| | - Zhen Wang
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology(SIMIT), Chinese Academy of Sciences, Shanghai 200050, China
- University of the Chinese Academy of Sciences, Beijing 100049, China
- School of Physical Science and Technology, Shanghai Tech University, Shanghai 200031, China
| |
Collapse
|
3
|
Elalaily T, Berke M, Kedves M, Fülöp G, Scherübl Z, Kanne T, Nygård J, Makk P, Csonka S. Signatures of Gate-Driven Out-of-Equilibrium Superconductivity in Ta/InAs Nanowires. ACS NANO 2023; 17:5528-5535. [PMID: 36912466 PMCID: PMC10062030 DOI: 10.1021/acsnano.2c10877] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/01/2022] [Accepted: 03/08/2023] [Indexed: 06/18/2023]
Abstract
Understanding the microscopic origin of the gate-controlled supercurrent (GCS) in superconducting nanobridges is crucial for engineering superconducting switches suitable for a variety of electronic applications. The origin of GCS is controversial, and various mechanisms have been proposed to explain it. In this work, we have investigated the GCS in a Ta layer deposited on the surface of InAs nanowires. Comparison between switching current distributions at opposite gate polarities and between the gate dependence of two opposite side gates with different nanowire-gate spacings shows that the GCS is determined by the power dissipated by the gate leakage. We also found a substantial difference between the influence of the gate and elevated bath temperature on the magnetic field dependence of the supercurrent. Detailed analysis of the switching dynamics at high gate voltages shows that the device is driven into the multiple phase slips regime by high-energy fluctuations arising from the leakage current.
Collapse
Affiliation(s)
- Tosson Elalaily
- Department
of Physics, Institute of Physics, Budapest
University of Technology and Economics, Müegyetem rkp. 3., H-1111 Budapest, Hungary
- MTA-BME
Superconducting Nanoelectronics Momentum Research Group, Müegyetem rkp. 3., H-1111 Budapest, Hungary
- Department
of Physics, Faculty of Science, Tanta University, Al-Geish St., 31527 Tanta, Gharbia, Egypt
| | - Martin Berke
- Department
of Physics, Institute of Physics, Budapest
University of Technology and Economics, Müegyetem rkp. 3., H-1111 Budapest, Hungary
- MTA-BME
Superconducting Nanoelectronics Momentum Research Group, Müegyetem rkp. 3., H-1111 Budapest, Hungary
| | - Máté Kedves
- Department
of Physics, Institute of Physics, Budapest
University of Technology and Economics, Müegyetem rkp. 3., H-1111 Budapest, Hungary
- MTA-BME
Correlated van der Waals Structures Momentum Research Group, Müegyetem rkp. 3., H-1111 Budapest, Hungary
| | - Gergő Fülöp
- Department
of Physics, Institute of Physics, Budapest
University of Technology and Economics, Müegyetem rkp. 3., H-1111 Budapest, Hungary
- MTA-BME
Superconducting Nanoelectronics Momentum Research Group, Müegyetem rkp. 3., H-1111 Budapest, Hungary
| | - Zoltán Scherübl
- Department
of Physics, Institute of Physics, Budapest
University of Technology and Economics, Müegyetem rkp. 3., H-1111 Budapest, Hungary
- MTA-BME
Superconducting Nanoelectronics Momentum Research Group, Müegyetem rkp. 3., H-1111 Budapest, Hungary
| | - Thomas Kanne
- Center
for Quantum Devices and Nano-Science Center, Niels Bohr Institute, University of Copenhagen, Universitetsparken 5, DK-2100, Copenhagen, Denmark
| | - Jesper Nygård
- Center
for Quantum Devices and Nano-Science Center, Niels Bohr Institute, University of Copenhagen, Universitetsparken 5, DK-2100, Copenhagen, Denmark
| | - Péter Makk
- Department
of Physics, Institute of Physics, Budapest
University of Technology and Economics, Müegyetem rkp. 3., H-1111 Budapest, Hungary
- MTA-BME
Correlated van der Waals Structures Momentum Research Group, Müegyetem rkp. 3., H-1111 Budapest, Hungary
| | - Szabolcs Csonka
- Department
of Physics, Institute of Physics, Budapest
University of Technology and Economics, Müegyetem rkp. 3., H-1111 Budapest, Hungary
- MTA-BME
Superconducting Nanoelectronics Momentum Research Group, Müegyetem rkp. 3., H-1111 Budapest, Hungary
| |
Collapse
|
4
|
Orús P, Sigloch F, Sangiao S, De Teresa JM. Superconducting Materials and Devices Grown by Focused Ion and Electron Beam Induced Deposition. NANOMATERIALS 2022; 12:nano12081367. [PMID: 35458074 PMCID: PMC9029853 DOI: 10.3390/nano12081367] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/16/2022] [Revised: 04/11/2022] [Accepted: 04/13/2022] [Indexed: 01/27/2023]
Abstract
Since its discovery in 1911, superconductivity has represented an equally inciting and fascinating field of study in several areas of physics and materials science, ranging from its most fundamental theoretical understanding, to its practical application in different areas of engineering. The fabrication of superconducting materials can be downsized to the nanoscale by means of Focused Ion/Electron Beam Induced Deposition: nanopatterning techniques that make use of a focused beam of ions or electrons to decompose a gaseous precursor in a single step. Overcoming the need to use a resist, these approaches allow for targeted, highly-flexible nanopatterning of nanostructures with lateral resolution in the range of 10 nm to 30 nm. In this review, the fundamentals of these nanofabrication techniques are presented, followed by a literature revision on the published work that makes use of them to grow superconducting materials, the most remarkable of which are based on tungsten, niobium, molybdenum, carbon, and lead. Several examples of the application of these materials to functional devices are presented, related to the superconducting proximity effect, vortex dynamics, electric-field effect, and to the nanofabrication of Josephson junctions and nanoSQUIDs. Owing to the patterning flexibility they offer, both of these techniques represent a powerful and convenient approach towards both fundamental and applied research in superconductivity.
Collapse
Affiliation(s)
- Pablo Orús
- Instituto de Nanociencia y Materiales de Aragón (INMA), CSIC-Universidad de Zaragoza, 50009 Zaragoza, Spain; (P.O.); (F.S.); (S.S.)
| | - Fabian Sigloch
- Instituto de Nanociencia y Materiales de Aragón (INMA), CSIC-Universidad de Zaragoza, 50009 Zaragoza, Spain; (P.O.); (F.S.); (S.S.)
| | - Soraya Sangiao
- Instituto de Nanociencia y Materiales de Aragón (INMA), CSIC-Universidad de Zaragoza, 50009 Zaragoza, Spain; (P.O.); (F.S.); (S.S.)
- Departamento de Física de la Materia Condensada, Facultad de Ciencias, Universidad de Zaragoza, 50009 Zaragoza, Spain
- Laboratorio de Microscopías Avanzadas (LMA), University of Zaragoza, 50018 Zaragoza, Spain
| | - José María De Teresa
- Instituto de Nanociencia y Materiales de Aragón (INMA), CSIC-Universidad de Zaragoza, 50009 Zaragoza, Spain; (P.O.); (F.S.); (S.S.)
- Departamento de Física de la Materia Condensada, Facultad de Ciencias, Universidad de Zaragoza, 50009 Zaragoza, Spain
- Laboratorio de Microscopías Avanzadas (LMA), University of Zaragoza, 50018 Zaragoza, Spain
- Correspondence:
| |
Collapse
|