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Guo Y, Qiu D, Shao M, Song J, Wang Y, Xu M, Yang C, Li P, Liu H, Xiong J. Modulations in Superconductors: Probes of Underlying Physics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2209457. [PMID: 36504310 DOI: 10.1002/adma.202209457] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/13/2022] [Revised: 11/16/2022] [Indexed: 06/02/2023]
Abstract
The importance of modulations is elevated to an unprecedented level, due to the delicate conditions required to bring out exotic phenomena in quantum materials, such as topological materials, magnetic materials, and superconductors. Recently, state-of-the-art modulation techniques in material science, such as electric-double-layer transistor, piezoelectric-based strain apparatus, angle twisting, and nanofabrication, have been utilized in superconductors. They not only efficiently increase the tuning capability to the broader ranges but also extend the tuning dimensionality to unprecedented degrees of freedom, including quantum fluctuations of competing phases, electronic correlation, and phase coherence essential to global superconductivity. Here, for a comprehensive review, these techniques together with the established modulation methods, such as elemental substitution, annealing, and polarization-induced gating, are contextualized. Depending on the mechanism of each method, the modulations are categorized into stoichiometric manipulation, electrostatic gating, mechanical modulation, and geometrical design. Their recent advances are highlighted by applications in newly discovered superconductors, e.g., nickelates, Kagome metals, and magic-angle graphene. Overall, the review is to provide systematic modulations in emergent superconductors and serve as the coordinate for future investigations, which can stimulate researchers in superconductivity and other fields to perform various modulations toward a thorough understanding of quantum materials.
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Affiliation(s)
- Yehao Guo
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Dong Qiu
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Mingxin Shao
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Jingyan Song
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Yang Wang
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Minyi Xu
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Chao Yang
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Peng Li
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Haiwen Liu
- Department of Physics, Beijing Normal University, Beijing, 100875, China
| | - Jie Xiong
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
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