Thermopower of Molecular Junction in Harsh Thermal Environments

Organometallics in molecular junctions: conductance, functions, and reactions

Molecular junctions, which involve sandwiching molecular structures between electrodes, play a crucial role in molecular electronics. Recent advances in this field have revealed the vital role of organometallic chemistry in the investigation of molecular junctions, which has added to their well-known contributions to catalysis and materials chemistry. This review summarizes the recent examples of organometallic chemistry applications in molecular junctions, which can be categorized into three types, i.e., class I encompassing molecular junctions with bridging organometallic complexes, class II involving molecular junctions with covalent and noncovalent metal electrode-carbon bonds, and class III comprising organometallic reactions within molecular junctions.

Large Seebeck Values in Metal-Molecule-Semimetal Junctions Attained by a Gateless Level-Alignment Method

Molecular junctions are potentially highly efficient devices for thermal energy harvesting since their transmission properties can be tailored to break electron-hole transport symmetry and consequently yield high Seebeck and Peltier coefficients. Full harnessing of this potential requires, however, a capability to precisely position their Fermi level within the transmission landscape. Currently, with the lack of such a "knob" for two-lead junctions, their thermoelectric performance is too low for applications. Here we report that the requested capability can be realized by using junctions with a semimetal lead and molecules with a tailored effect of their monolayers on the work function of the semimetal. The approach is demonstrated by junctions with monolayers of alkanethiols on bismuth (Bi). Fermi-level tuning enables in this case increasing the Seebeck coefficient by more than 2 orders of magnitude. The underlying mechanism of this capability is discussed, as well as its general applicability.

Robust Sub-5 Nanometer bis(Diarylcarbene)-Based Thin Film for Molecular Electronics and Plasmonics

In miniaturized electronic and optoelectronic circuits, molecular tunnel junctions have attracted enormous research interest due to their small footprint, low power consumption, and rich molecular functions. However, the most popular building blocks used in contemporary molecular tunnel junctions are thiol molecules, which attach to electrode surfaces via a metal-thiolate (MS) bond, showing low stability and usually quick degradation within several days. To pave the way for more widely applicable and stable molecular tunnel junctions, there is a need to develop new molecular anchoring groups. Here, this work demonstrates robust and air-stable molecular tunnel junctions with a sub-5 nanometer bis(diarylcarbene)-based thin film as the tunneling barrier, which anchors to the electrode surface via a AuC bond. The bis(diarylcarbene)-based molecular tunnel junctions exhibit high thermal stability against heating up to 200 °C and long storage lifetime over 5 months in an ambient environment. Both electrical and optical performance of these bis(diarylcarbene)-based molecular junctions are characterized systematically, showing similar behaviors to thiol-based junctions as well as largely improved emission stability. This research highlights the excellent performance of bis(diarylcarbene)-based molecular tunnel junctions, which could be useful for applications in molecular electronics and plasmonics.

Molecular Thermoelectricity in EGaIn-Based Molecular Junctions

ConspectusUnderstanding the thermoelectric effects that convert energy between heat and electricity on a molecular scale is of great interest to the nanoscience community. As electronic devices continue to be miniaturized to nanometer scales, thermoregulation on such devices becomes increasingly critical. In addition, the study of molecular thermoelectricity provides information that cannot be accessed through conventional electrical conductance measurements. The field of molecular thermoelectrics aims to explore thermoelectric effects in electrode-molecule-electrode tunnel junctions and draw inferences on how the (supra)molecular structure of active molecules is associated with their thermopower. In this Account, we introduce a convenient and useful junction technique that enables thermovoltage measurements of one molecule thick films, self-assembled monolayers (SAMs), with reliability, and discuss the atomic-detailed structure-thermopower relations established by the technique. The technique relies on a microelectrode composed of non-Newtonian liquid metal, eutectic gallium-indium (EGaIn) covered with a native gallium oxide layer. The EGaIn electrode makes it possible to form thermoelectric contacts with the delicate structure of SAMs in a noninvasive fashion. A defined interface between SAM and the EGaIn electrode allows time-effective collection of large amounts of thermovoltage data, with great reproducibility, efficiency, and reliable interpretation and statistical analysis of the data. We also highlight recent efforts to utilize the EGaIn technique for probing molecular thermoelectricity and structure-thermopower relations. Using the technique, it was possible to unravel quantum-chemical mechanisms of thermoelectric functions, based on the Mott formula, in SAM-based large-area junctions, which in turn led us to set various hypotheses to boost the Seebeck coefficient. By validating the hypotheses again with the EGaIn technique, we revealed that the thermopower of junction increases through the reduction of the energy offset between accessible molecular orbital energy level and Fermi level or the tuning of broadening of the orbital energy level. Such alterations in the shape of energy topography of junction could be achieved through structural modifications in anchoring group and molecular backbone of SAM, and the bottom electrode. Molecular thermoelectrics offers a unique opportunity to build a well-defined nanoscale system and isolate an effect of interest from others, advancing fundamental understanding of charge transport across individual molecules and molecule-electrode interfaces. In the Account, we showed our recent work involving carefully designed molecular system that are relevant to answering the question of how thermopower differs between the tunneling and thermal-hopping regimes. The field of molecular thermoelectrics needs to address practical application-related issues, particularly molecular degradation in thermal environments. In this regard, we summarized the results highlighting the thermal instability of SAM-based junctions based on a traditional thiol anchor group and how to circumvent this problem. We also discussed the power factor (PF)─a practical parameter representing the efficiency for converting heat into electricity─of SAMs, evaluated using the EGaIn technique. In the Conclusion section of this Account, we present future challenges and perspectives.

Organic thermoelectric generators: working principles, materials, and fabrication techniques

Organic thermoelectricity is a blooming field of research that employs organic (semi)conductors to recycle waste heat through its partial conversion to electrical power. Such a conversion occurs by means of organic thermoelectric generator (OTEG) devices. The recent process on the synthesis of novel materials and on the understanding of doping mechanisms to increase conductivity has tremendously narrowed the gap between laboratory research and their application in actual applications. This Feature Article intends to highlight the impressive progress in materials and fabrication techniques for OTEGs made in recent years.

High Seebeck Coefficient Achieved by Multinuclear Organometallic Molecular Junctions

This paper describes the thermoelectric properties of molecular junctions incorporating multinuclear ruthenium alkynyl complexes that comprise Ru(dppe)₂ [dppe = 1,2-bis(diphenylphosphino)ethane] fragments and diethylnyl aromatic bridging ligands with thioether anchors. Using the liquid metal technique, the Seebeck coefficient was examined as a function of metal nuclearity, oxidation state, and substituent on the organic ligand backbone. High Seebeck coefficients up to 73 μV/K and appreciable thermal stability with thermovoltage up to ∼3.3 mV at a heating temperature of 423 K were observed. An unusually high proximity of the highest occupied molecular orbital (HOMO) energy level to the Fermi level was revealed to give the remarkable thermoelectric performance as suggested by combined experiments and calculations. This work offers important insights into the development of molecular-scale devices for efficient thermoregulation and heat-to-electricity conversion.

Thermopower in Transition from Tunneling to Hopping

The Seebeck effect of a molecular junction in a hopping regime or tunneling-to-hopping transition remains uncertain. This paper describes the Seebeck effect in molecular epitaxy films (OPI_n where n = 1-9) based on imine condensation between an aryl amine and aldehyde and investigates how the Seebeck coefficient (S, μV/K) varies at the crossover region. The S value of OPI_n linearly increased with increasing the molecular length (d, nm), ranging from 7.2 to 38.0 μV/K. The increasing rate changed from 0.99 to 0.38 μV·K^-1 Å^-1 at d = 3.4 nm (OPI₄). Combined experimental and theoretical studies indicated that such a change stems from a tunneling-to-hopping transition, and the small but detectable length-dependence of thermopower in the long molecules originates from the gradual reduction of the tunneling contribution to the broadening of molecular orbital energy level, rather than its relative position to the Fermi level. Our work helps to bridge the gap between bulk and nanoscale thermoelectric systems.