1
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Yu Y, Cao D, Yang L, Guan H, Liu Z, Liu C, Chen X, Shu H. Oxidation-induced graded bandgap narrowing in Two-dimensional tin sulfide for high-sensitivity broadband photodetection. J Colloid Interface Sci 2024; 679:430-440. [PMID: 39368162 DOI: 10.1016/j.jcis.2024.09.210] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/12/2024] [Revised: 09/26/2024] [Accepted: 09/26/2024] [Indexed: 10/07/2024]
Abstract
Two-dimensional (2D) layered group-IV monochalcogenides with large surface-to-volume ratio and high surface activity make that their structural and optoelectronic properties are sensitive to air oxidation. Here, we report the utilization of oxidation-induced gradient doping to modulate electronic structures and optoelectronic properties of 2D group-IV monochalcogenides by using SnS nanoplates grown by physical vapor deposition as a model system. By a precise control of oxidation time and temperature, the structural transition from SnS to SnSOx could be driven by the layer-by-layer oxygen doping and intercalation. The resulting SnSOx with a graded narrowing bandgap exhibits the enhanced optical absorption and photocurrent, leading to the fabricated SnSOx photodetector with remarkable photoresponsivity and fast response speed (<64 μs) at a broadband spectrum range of 520-1550 nm. The peak responsivity (7294 A/W) and detectivity (9.54 × 109 Jones) of SnSOx device are at least two orders of magnitude larger than those of SnS photodetector. Moreover, its photodetection performance can be competed with state-of-the-art of 2D materials-based photodetectors. This work suggests that the air oxidation could be utilized as an efficient strategy to engineer the electronic and optical properties of SnS and other 2D group-IV monochalcogenides for the development of high-performance broadband photodetectors.
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Affiliation(s)
- Yue Yu
- College of Science, China Jiliang University, 310018 Hangzhou, China
| | - Dan Cao
- College of Science, China Jiliang University, 310018 Hangzhou, China.
| | - Lingang Yang
- College of Science, China Jiliang University, 310018 Hangzhou, China
| | - Haibiao Guan
- College of Optical and Electronic Technology, China Jiliang University, 310018 Hangzhou, China
| | - Zehao Liu
- College of Optical and Electronic Technology, China Jiliang University, 310018 Hangzhou, China
| | - Changlong Liu
- College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advance Study, University of Chinese Academy of Sciences, 310024 Hangzhou, China.
| | - Xiaoshuang Chen
- College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advance Study, University of Chinese Academy of Sciences, 310024 Hangzhou, China; State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Science, 200083 Shanghai, China
| | - Haibo Shu
- College of Optical and Electronic Technology, China Jiliang University, 310018 Hangzhou, China; State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Science, 200083 Shanghai, China.
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2
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Song H, Ji S, Kang SG, Shin N. Contact Geometry-Dependent Excitonic Emission in Mixed-Dimensional van der Waals Heterostructures. ACS NANO 2024; 18:19179-19189. [PMID: 38990759 PMCID: PMC11271179 DOI: 10.1021/acsnano.4c04770] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/11/2024] [Revised: 07/03/2024] [Accepted: 07/05/2024] [Indexed: 07/13/2024]
Abstract
Manipulation of excitonic emission in two-dimensional (2D) materials via the assembly of van der Waals (vdW) heterostructures unlocks numerous opportunities for engineering their photonic and optoelectronic properties. In this work, we introduce a category of mixed-dimensional vdW heterostructures, integrating 2D materials with one-dimensional (1D) semiconductor nanowires composed of vdW layers. This configuration induces spatially distinct localized excitonic emissions through a tailored interfacial heterolayer atomic arrangement. By precisely adjusting both the axial and sidewall facet orientations of bottom-up grown PbI2 vdW nanowires and by transferring them onto 1L WSe2 flakes, we establish vdW heterointerfaces with either perpendicular or parallel interatomic arrangements. The edge-standing heterojunction, featuring perpendicular PbI2 layers atop WSe2, promotes efficient charge transfer through the edges and coupled localized states, leading to an enhanced redshifted excitonic emission. Conversely, the layer-by-layer heterointerface, where PbI2 layers are in parallel contact with WSe2, exhibits substantial quenching due to deep midgap states in a type-II alignment, as evidenced by power-dependent measurements and first-principle calculations. Our results introduce a method for actively manipulating excitonic emissions in 2D transition metal dichalcogenides (TMDs) through edge engineering, highlighting their potential in the development of various quantum devices.
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Affiliation(s)
- Hyukjin Song
- Department
of Chemical Engineering, Inha University, Incheon 22212, Republic of Korea
- Program
in Smart Digital Engineering, Inha University, Incheon 22212, Republic of Korea
| | - Sumin Ji
- Program
in Smart Digital Engineering, Inha University, Incheon 22212, Republic of Korea
- Program
in Biomedical Science and Engineering, Inha
University, Incheon 22212, Republic of Korea
| | - Sung Gu Kang
- School
of Chemical Engineering, University of Ulsan, Ulsan 680-749, Republic of Korea
| | - Naechul Shin
- Department
of Chemical Engineering, Inha University, Incheon 22212, Republic of Korea
- Program
in Smart Digital Engineering, Inha University, Incheon 22212, Republic of Korea
- Program
in Biomedical Science and Engineering, Inha
University, Incheon 22212, Republic of Korea
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3
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Lim S, Kim TW, Park T, Heo YS, Yang S, Seo H, Suh J, Lee JU. Large-Scale Analysis of Defects in Atomically Thin Semiconductors using Hyperspectral Line Imaging. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2400737. [PMID: 38874112 DOI: 10.1002/smll.202400737] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/29/2024] [Revised: 05/16/2024] [Indexed: 06/15/2024]
Abstract
Point defects play a crucial role in determining the properties of atomically thin semiconductors. This work demonstrates the controlled formation of different types of defects and their comprehensive optical characterization using hyperspectral line imaging (HSLI). Distinct optical responses are observed in monolayer semiconductors grown under different stoichiometries using metal-organic chemical vapor deposition. HSLI enables the simultaneous measurement of 400 spectra, allowing for statistical analysis of optical signatures at close to a centimeter scale. The study discovers that chalcogen-rich samples exhibit remarkable optical uniformity due to reduced precursor accumulation compared to the metal-rich case. The utilization of HSLI as a facile and reliable characterization tool pushes the boundaries of potential applications for atomically thin semiconductors in future devices.
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Affiliation(s)
- Seungjae Lim
- Department of Physics and Department of Energy Systems Research, Ajou University, Suwon, 16499, South Korea
| | - Tae Wan Kim
- Department of Physics and Department of Energy Systems Research, Ajou University, Suwon, 16499, South Korea
| | - Taejoon Park
- Department of Physics and Department of Energy Systems Research, Ajou University, Suwon, 16499, South Korea
| | - Yoon Seong Heo
- Department of Physics and Department of Energy Systems Research, Ajou University, Suwon, 16499, South Korea
| | - Seonguk Yang
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan, 44919, South Korea
- Department of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology, Ulsan, 44919, South Korea
| | - Hosung Seo
- Department of Physics and Department of Energy Systems Research, Ajou University, Suwon, 16499, South Korea
| | - Joonki Suh
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan, 44919, South Korea
- Department of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology, Ulsan, 44919, South Korea
| | - Jae-Ung Lee
- Department of Physics and Department of Energy Systems Research, Ajou University, Suwon, 16499, South Korea
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4
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Li J, Yang R, Higashitarumizu N, Dai S, Wu J, Javey A, Grigoropoulos CP. Transient Nanoscopy of Exciton Dynamics in 2D Transition Metal Dichalcogenides. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2311568. [PMID: 38588584 DOI: 10.1002/adma.202311568] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/02/2023] [Revised: 03/18/2024] [Indexed: 04/10/2024]
Abstract
The electronic and optical properties of 2D transition metal dichalcogenides are dominated by strong excitonic resonances. Exciton dynamics plays a critical role in the functionality and performance of many miniaturized 2D optoelectronic devices; however, the measurement of nanoscale excitonic behaviors remains challenging. Here, a near-field transient nanoscopy is reported to probe exciton dynamics beyond the diffraction limit. Exciton recombination and exciton-exciton annihilation processes in monolayer and bilayer MoS2 are studied as the proof-of-concept demonstration. Moreover, with the capability to access local sites, intriguing exciton dynamics near the monolayer-bilayer interface and at the MoS2 nano-wrinkles are resolved. Such nanoscale resolution highlights the potential of this transient nanoscopy for fundamental investigation of exciton physics and further optimization of functional devices.
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Affiliation(s)
- Jingang Li
- Laser Thermal Laboratory, Department of Mechanical Engineering, University of California, Berkeley, CA, 94720, USA
| | - Rundi Yang
- Laser Thermal Laboratory, Department of Mechanical Engineering, University of California, Berkeley, CA, 94720, USA
| | - Naoki Higashitarumizu
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Siyuan Dai
- Materials Research and Education Center, Department of Mechanical Engineering, Auburn University, Auburn, AL, 36849, USA
| | - Junqiao Wu
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
| | - Ali Javey
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Costas P Grigoropoulos
- Laser Thermal Laboratory, Department of Mechanical Engineering, University of California, Berkeley, CA, 94720, USA
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5
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Xu M, Ji H, Zhang M, Zheng L, Li W, Luo L, Chen M, Liu Z, Gan X, Wang X, Huang W. CVD Synthesis of Twisted Bilayer WS 2 with Tunable Second Harmonic Generation. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2313638. [PMID: 38328994 DOI: 10.1002/adma.202313638] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/13/2023] [Revised: 01/27/2024] [Indexed: 02/09/2024]
Abstract
The introduction of rotational freedom by twist angles in twisted bilayer (TB) transition metal dichalcogenides (TMDCs) can tailor the inherent properties of the TMDCs, which provides a promising platform to investigate the exotic physical properties. However, direct synthesis of high-quality TB-TMDCs with full twist angles is significantly challenging due to the substantial energy barriers during crystal growth. Here, a modified chemical vapor deposition strategy is proposed to synthesize TB-WS2 with a wide twist angle range from 0° to 120°. Utilizing a tilted SiO2/Si substrate, a gas flow disturbance is generated in the furnace tube to create a heterogeneous concentration gradient of the metal precursor, which provides an extra driving force for the growth of TB-WS2. The Raman and photoluminescence results confirm a weak interlayer coupling of the TB-WS2. High-quality periodic Moiré patterns are observed in the scanning transmission electron microscopy images. Moreover, owing to the strong correlation between the nonlinear optical response and the twisted crystal structure, tunable second harmonic generation behaviors are realized in the TB-WS2. This approach opens up a new avenue for the direct growth of high-crystalline-quality and pristine TB-TMDCs and their potential applications in nonlinear optical devices.
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Affiliation(s)
- Manzhang Xu
- Frontiers Science Center for Flexible Electronics (FSCFE) & Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, Xi'an, 710072, P. R. China
- MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, Xi'an, 710072, P. R. China
- Shaanxi Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, Xi'an, 710072, P. R. China
| | - Hongjia Ji
- Frontiers Science Center for Flexible Electronics (FSCFE) & Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, Xi'an, 710072, P. R. China
| | - Mingwen Zhang
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an, 710129, China
| | - Lu Zheng
- Frontiers Science Center for Flexible Electronics (FSCFE) & Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, Xi'an, 710072, P. R. China
- MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, Xi'an, 710072, P. R. China
- Shaanxi Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, Xi'an, 710072, P. R. China
| | - Weiwei Li
- Frontiers Science Center for Flexible Electronics (FSCFE) & Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, Xi'an, 710072, P. R. China
- MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, Xi'an, 710072, P. R. China
- Shaanxi Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, Xi'an, 710072, P. R. China
| | - Lei Luo
- Frontiers Science Center for Flexible Electronics (FSCFE) & Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, Xi'an, 710072, P. R. China
| | - Mengdi Chen
- Frontiers Science Center for Flexible Electronics (FSCFE) & Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, Xi'an, 710072, P. R. China
| | - Zheng Liu
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Xuetao Gan
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an, 710129, China
| | - Xuewen Wang
- Frontiers Science Center for Flexible Electronics (FSCFE) & Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, Xi'an, 710072, P. R. China
- MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, Xi'an, 710072, P. R. China
- Shaanxi Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, Xi'an, 710072, P. R. China
| | - Wei Huang
- Frontiers Science Center for Flexible Electronics (FSCFE) & Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, Xi'an, 710072, P. R. China
- MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, Xi'an, 710072, P. R. China
- Shaanxi Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, Xi'an, 710072, P. R. China
- State Key Laboratory of Organic Electronics and Information Displays, Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing, 210023, China
- Key Laboratory of Flexible Electronics (KLoFE) and Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), Nanjing, 211800, China
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6
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Ryu H, Hong SC, Kim K, Jung Y, Lee Y, Lee K, Kim Y, Kim H, Watanabe K, Taniguchi T, Kim J, Kim K, Cheong H, Lee GH. Optical grade transformation of monolayer transition metal dichalcogenides via encapsulation annealing. NANOSCALE 2024. [PMID: 38439548 DOI: 10.1039/d3nr06641j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/06/2024]
Abstract
Monolayer transition metal dichalcogenides (TMDs) have emerged as highly promising candidates for optoelectronic applications due to their direct band gap and strong light-matter interactions. However, exfoliated TMDs have demonstrated optical characteristics that fall short of expectations, primarily because of significant defects and associated doping in the synthesized TMD crystals. Here, we report the improvement of optical properties in monolayer TMDs of MoS2, MoSe2, WS2, and WSe2, by hBN-encapsulation annealing. Monolayer WSe2 showed 2000% enhanced photoluminescence quantum yield (PLQY) and 1000% increased lifetime after encapsulation annealing at 1000 °C, which are attributed to dominant radiative recombination of excitons through dedoping of monolayer TMDs. Furthermore, after encapsulation annealing, the transport characteristics of monolayer WS2 changed from n-type to ambipolar, along with an enhanced hole transport, which also support dedoping of annealed TMDs. This work provides an innovative approach to elevate the optical grade of monolayer TMDs, enabling the fabrication of high-performance optoelectronic devices.
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Affiliation(s)
- Huije Ryu
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea.
| | - Seong Chul Hong
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea.
| | - Kangwon Kim
- Department of Physics, Sogang University, Seoul 04107, Republic of Korea
| | - Yeonjoon Jung
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea.
| | - Yangjin Lee
- Department of Physics, Yonsei University, Seoul 03722, Republic of Korea
- Center for Nanomedicine, Institute for Basic Science, Seoul 03722, Republic of Korea
| | - Kihyun Lee
- Department of Physics, Yonsei University, Seoul 03722, Republic of Korea
- Center for Nanomedicine, Institute for Basic Science, Seoul 03722, Republic of Korea
| | - Youngbum Kim
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Hyunjun Kim
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea.
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Jeongyong Kim
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Kwanpyo Kim
- Department of Physics, Yonsei University, Seoul 03722, Republic of Korea
- Center for Nanomedicine, Institute for Basic Science, Seoul 03722, Republic of Korea
| | - Hyeonsik Cheong
- Department of Physics, Sogang University, Seoul 04107, Republic of Korea
| | - Gwan-Hyoung Lee
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea.
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7
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Zhou H, Gao L, He S, Zhang Y, Geng J, Lu J, Cai J. Effects of strain and thickness on the mechanical, electronic, and optical properties of Cu 2Te. Phys Chem Chem Phys 2024; 26:5429-5437. [PMID: 38275021 DOI: 10.1039/d3cp04356h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/27/2024]
Abstract
Two-dimensional transition-metal chalcogenides (TMCs) have attracted considerable attention because of their exceptional photoelectric properties, finding applications in diverse fields such as photovoltaics, lithium-ion batteries, catalysis, and energy conversion and storage. Recently, experimentally fabricated monolayers of semiconducting Cu2Te have emerged as intriguing materials with outstanding thermal and photoelectric characteristics. In this study, we employ first-principles calculations to investigate the mechanical, electronic, and optical properties of monolayer Cu2Te exhibiting both λ and ζ structures, considering the effects of thickness and strain. The calculations reveal the robust mechanical stability of λ-Cu2Te and ζ-Cu2Te under varying thickness and strain conditions. By applying -5% to +5% strain, the band gaps can be modulated, with ζ-Cu2Te exhibiting an indirect-to-direct transition at a biaxial strain of +5%. In addition, a semiconductor-to-metal transition is observed for both ζ-Cu2Te and λ-Cu2Te with increasing thickness. The absorption spectra of λ-Cu2Te and ζ-Cu2Te exhibit a redshift with an increase in the number of layers. These computational insights into Cu2Te provide valuable information for potential applications in nano-electromechanical systems, optoelectronics, and photocatalytic devices and may guide subsequent experimental research efforts.
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Affiliation(s)
- Hangjing Zhou
- Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650093, China.
| | - Lei Gao
- Faculty of Science, Kunming University of Science and Technology, Kunming 650500, China.
| | - Shihao He
- Faculty of Science, Kunming University of Science and Technology, Kunming 650500, China.
| | - Yong Zhang
- Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650093, China.
| | - Jianqun Geng
- Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650093, China.
| | - Jianchen Lu
- Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650093, China.
| | - Jinming Cai
- Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650093, China.
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8
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Bianchi MG, Risplendi F, Re Fiorentin M, Cicero G. Engineering the Electrical and Optical Properties of WS 2 Monolayers via Defect Control. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2305162. [PMID: 38009517 PMCID: PMC10811516 DOI: 10.1002/advs.202305162] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/27/2023] [Revised: 09/25/2023] [Indexed: 11/29/2023]
Abstract
Two-dimensional (2D) materials as tungsten disulphide (WS2 ) are rising as the ideal platform for the next generation of nanoscale devices due to the excellent electric-transport and optical properties. However, the presence of defects in the as grown samples represents one of the main limiting factors for commercial applications. At the same time, WS2 properties are frequently tailored by introducing impurities at specific sites. Aim of this review paper is to present a complete description and discussion of the effects of both intentional and unintentional defects in WS2 , by an in depth analysis of the recent experimental and theoretical investigations reported in the literature. First, the most frequent intrinsic defects in WS2 are presented and their effects in the readily synthetized material are discussed. Possible solutions to remove and heal unintentional defects are also analyzed. Following, different doping schemes are reported, including the traditional substitution approach and innovative techniques based on the surface charge transfer with adsorbed atoms or molecules. The plethora of WS2 monolayer modifications presented in this review and the systematic analysis of the corresponding optical and electronic properties, represent strategic degrees of freedom the researchers may exploit to tailor WS2 optical and electronic properties for specific device applications.
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Affiliation(s)
- Michele Giovanni Bianchi
- Department of Applied Science and TechnologyPolitecnico di Torinocorso Duca degli Abruzzi 24Torino10129Italy
| | - Francesca Risplendi
- Department of Applied Science and TechnologyPolitecnico di Torinocorso Duca degli Abruzzi 24Torino10129Italy
| | - Michele Re Fiorentin
- Department of Applied Science and TechnologyPolitecnico di Torinocorso Duca degli Abruzzi 24Torino10129Italy
| | - Giancarlo Cicero
- Department of Applied Science and TechnologyPolitecnico di Torinocorso Duca degli Abruzzi 24Torino10129Italy
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9
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Zhao B, Huo Z, Li L, Liu H, Hu Z, Wu Y, Qiu H. Improving the Luminescence Performance of Monolayer MoS 2 by Doping Multiple Metal Elements with CVT Method. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2520. [PMID: 37764549 PMCID: PMC10535582 DOI: 10.3390/nano13182520] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/29/2023] [Revised: 09/06/2023] [Accepted: 09/06/2023] [Indexed: 09/29/2023]
Abstract
Two-dimensional (2D) transition metal dichalcogenides (TMDCs) draw much attention as critical semiconductor materials for 2D, optoelectronic, and spin electronic devices. Although controlled doping of 2D semiconductors can also be used to tune their bandgap and type of carrier and further change their electronic, optical, and catalytic properties, this remains an ongoing challenge. Here, we successfully doped a series of metal elements (including Hf, Zr, Gd, and Dy) into the monolayer MoS2 through a single-step chemical vapor transport (CVT), and the atomic embedded structure is confirmed by scanning transmission electron microscope (STEM) with a probe corrector measurement. In addition, the host crystal is well preserved, and no random atomic aggregation is observed. More importantly, adjusting the band structure of MoS2 enhanced the fluorescence and the carrier effect. This work provides a growth method for doping non-like elements into 2D MoS2 and potentially many other 2D materials to modify their properties.
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Affiliation(s)
| | | | | | | | | | | | - Hailong Qiu
- Tianjin Key Laboratory of Functional Crystal Materials, Institute of Functional Crystal, Tianjin University of Technology, Tianjin 300384, China; (B.Z.); (Z.H.); (L.L.); (H.L.); (Z.H.); (Y.W.)
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10
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Huang Z, Deng W, Zhang Z, Zhao B, Zhang H, Wang D, Li B, Liu M, Huangfu Y, Duan X. Terminal Atom-Controlled Etching of 2D-TMDs. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2211252. [PMID: 36740628 DOI: 10.1002/adma.202211252] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/01/2022] [Revised: 01/19/2023] [Indexed: 05/17/2023]
Abstract
The controlled etching of 2D transition metal dichalcogenides (2D-TMDs) is critical to understanding the growth mechanisms of 2D materials and patterning 2D materials but remains a major comprehensive challenge. Here, a rational strategy to control the terminal atoms of 2D-TMDs etched holes is reported. Using laser irradiation combined with an improved anisotropic thermal etching process under a determined atmosphere, terminal atom-controlled etched hole arrays are created on 2D-TMDs. By adjusting the gas atmosphere during the thermal etching stage, triangular etched hole arrays terminated by the tungsten zigzag (W-ZZ) edge (in an Ar/H2 atmosphere), hexagonal etched hole arrays terminated alternately by the W-ZZ edge and sulfur (selenium) zigzag (S-ZZ or Se-ZZ) edge (in a pure Ar atmosphere), and triangular etched hole arrays terminated by the S-ZZ (Se-ZZ) edge (in an Ar/sulfur [selenium] vapor atmosphere) can be obtained. Density functional theory reveals the forming energy of different edges and the different activities of metal atoms and chalcogenide atoms under different atmospheres, which determine the terminal atoms of the holes. This work may enhance the understanding of the etching and growth of 2D-TMDs. The 2D-TMDs hole arrays constructed by this work may have important applications in catalysis, nonlinear optics, spintronics, and large-scale integrated circuits.
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Affiliation(s)
- Ziwei Huang
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, China
| | - Wei Deng
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, China
| | - Zhengwei Zhang
- Hunan Key Laboratory of Super-microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, 410083, China
| | - Bei Zhao
- School of Physics and Key Laboratory of MEMS of Ministry of Education, School of Physics, Southeast University, Nanjing, 211189, China
| | - Hongmei Zhang
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, China
| | - Di Wang
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, China
| | - Bailing Li
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, China
| | - Miaomiao Liu
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, China
| | - Ying Huangfu
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, China
| | - Xidong Duan
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, China
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11
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Zhu Z, Kim JS, Moody MJ, Lauhon LJ. Edge and Interface Resistances Create Distinct Trade-Offs When Optimizing the Microstructure of Printed van der Waals Thin-Film Transistors. ACS NANO 2023; 17:575-586. [PMID: 36573755 DOI: 10.1021/acsnano.2c09527] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Inks based on two-dimensional (2D) materials could be used to tune the properties of printed electronics while maintaining compatibility with scalable manufacturing processes. However, a very wide range of performances have been reported in printed thin-film transistors in which the 2D channel material exhibits considerable variation in microstructure. The lack of quantitative physics-based relationships between film microstructure and transistor performance limits the codesign of exfoliation, sorting, and printing processes to inefficient empirical approaches. To rationally guide the development of 2D inks and related processing, we report a gate-dependent resistor network model that establishes distinct microstructure-performance relationships created by near-edge and intersheet resistances in printed van der Waals thin-film transistors. The model is calibrated by analyzing electrical output characteristics of model transistors consisting of overlapping 2D nanosheets with varied thicknesses that are mechanically exfoliated and transferred. Kelvin probe force microscopy analysis on the model transistors leads to the discovery that the nanosheet edges, not the intersheet resistance, limit transport due to their impact on charge carrier depletion and scattering. Our model suggests that when transport in a 2D material network is limited by the near-edge resistance, the optimum nanosheet thickness is dictated by a trade-off between charged impurity screening and gate screening, and the film mobilities are more sensitive to variations in printed nanosheet density. Removal of edge states can enable the realization of higher mobilities with thinner nanosheets due to reduced junction resistances and reduced gate screening. Our analysis of the influence of nanosheet edges on the effective film mobility not only examines the prospects of extant exfoliation methods to achieve the optimum microstructure but also provides important perspectives on processes that are essential to maximizing printed film performance.
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Affiliation(s)
- Zhehao Zhu
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois60208, United States
| | - Joon-Seok Kim
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois60208, United States
| | - Michael J Moody
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois60208, United States
| | - Lincoln J Lauhon
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois60208, United States
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12
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Xie J, Meng G, Chen B, Li Z, Yin Z, Cheng Y. Vapor-Liquid-Solid Growth of Morphology-Tailorable WS 2 toward P-Type Monolayer Field-Effect Transistors. ACS APPLIED MATERIALS & INTERFACES 2022; 14:45716-45724. [PMID: 36183271 DOI: 10.1021/acsami.2c13812] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Although substantial efforts have been made, controllable synthesis of p-type WS2 remains a challenge. In this work, we employ NaCl as a seeding promoter to realize vapor-liquid-solid (VLS) growth of p-type WS2. Morphological evolution, including a one-dimensional (1D) nanowire to two-dimensional (2D) planar domain and 2D shape transition of WS2 domains, can be well-controlled by the growth temperature and sulfur introduction time. A high growth temperature is required to enable planar growth of 2D WS2, and a sulfur-rich environment is found to facilitate the growth of high-quality WS2. Raman and photoluminescence (PL) mappings demonstrate uniform crystallinity and high quantum efficiency of VLS-grown WS2. Moreover, monolayer WS2-based field-effect transistors (FETs) are fabricated, showing p-type conducting behavior, which is different from previous reported n-type FETs from WS2 grown by other methods. First-principles calculations show that the p-type behavior originates from the substitution of Na at the W site, which will form an additional acceptor level above the valence band maximum (VBM). This facile VLS growth method opens the avenue to realize the p-n WS2 homojunctions and p/n-WS2-based heterojunctions for monolayer wearable electronic, photonic, optoelectronic, and biosensing devices and should also be a great benefit to the development of 2D complementary metal-oxide-semiconductor (CMOS) circuit applications.
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Affiliation(s)
- Jinan Xie
- State Key Laboratory of Electrical Insulation and Power Equipment, Center of Nanomaterials for Renewable Energy (CNRE), School of Electrical Engineering, Xi'an Jiaotong University, Xi'an, Shaanxi710049, People's Republic of China
| | - Guodong Meng
- State Key Laboratory of Electrical Insulation and Power Equipment, Center of Nanomaterials for Renewable Energy (CNRE), School of Electrical Engineering, Xi'an Jiaotong University, Xi'an, Shaanxi710049, People's Republic of China
| | - Baiyi Chen
- State Key Laboratory of Electrical Insulation and Power Equipment, Center of Nanomaterials for Renewable Energy (CNRE), School of Electrical Engineering, Xi'an Jiaotong University, Xi'an, Shaanxi710049, People's Republic of China
| | - Zhe Li
- State Key Laboratory of Electrical Insulation and Power Equipment, Center of Nanomaterials for Renewable Energy (CNRE), School of Electrical Engineering, Xi'an Jiaotong University, Xi'an, Shaanxi710049, People's Republic of China
| | - Zongyou Yin
- Research School of Chemistry, The Australian National University, Canberra, Australian Capital Territory2601, Australia
| | - Yonghong Cheng
- State Key Laboratory of Electrical Insulation and Power Equipment, Center of Nanomaterials for Renewable Energy (CNRE), School of Electrical Engineering, Xi'an Jiaotong University, Xi'an, Shaanxi710049, People's Republic of China
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13
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Xiao Y, Qu J, Luo Z, Chen Y, Yang X, Zhang D, Li H, Zheng B, Yi J, Wu R, You W, Liu B, Chen S, Pan A. Van der Waals epitaxial growth and optoelectronics of a vertical MoS 2/WSe 2 p-n junction. FRONTIERS OF OPTOELECTRONICS 2022; 15:41. [PMID: 36637698 PMCID: PMC9756242 DOI: 10.1007/s12200-022-00041-4] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 04/14/2022] [Accepted: 04/21/2022] [Indexed: 06/17/2023]
Abstract
Two-dimensional (2D) transition metal dichalcogenides (TMDs) have attracted extensive attention due to their unique electronic and optical properties. In particular, TMDs can be flexibly combined to form diverse vertical van der Waals (vdWs) heterostructures without the limitation of lattice matching, which creates vast opportunities for fundamental investigation of novel optoelectronic applications. Here, we report an atomically thin vertical p-n junction WSe2/MoS2 produced by a chemical vapor deposition method. Transmission electron microscopy and steady-state photoluminescence experiments reveal its high quality and excellent optical properties. Back gate field effect transistor (FET) constructed using this p-n junction exhibits bipolar behaviors and a mobility of 9 cm2/(V·s). In addition, the photodetector based on MoS2/WSe2 heterostructures displays outstanding optoelectronic properties (R = 8 A/W, D* = 2.93 × 1011 Jones, on/off ratio of 104), which benefited from the built-in electric field across the interface. The direct growth of TMDs p-n vertical heterostructures may offer a novel platform for future optoelectronic applications.
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Affiliation(s)
- Yu Xiao
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, 410082, China
| | - Junyu Qu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, 410082, China
| | - Ziyu Luo
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, 410082, China
| | - Ying Chen
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, 410082, China
| | - Xin Yang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, 410082, China
| | - Danliang Zhang
- School of Materials Science and Engineering, Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan University, Changsha, 410082, China
| | - Honglai Li
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, 410082, China
| | - Biyuan Zheng
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, 410082, China
| | - Jiali Yi
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, 410082, China
| | - Rong Wu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, 410082, China
| | - Wenxia You
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, 410082, China
| | - Bo Liu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, 410082, China
| | - Shula Chen
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, 410082, China.
| | - Anlian Pan
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, 410082, China.
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