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Kumar P, Chen J, Meng AC, Yang WCD, Anantharaman SB, Horwath JP, Idrobo JC, Mishra H, Liu Y, Davydov AV, Stach EA, Jariwala D. Observation of Sub-10 nm Transition Metal Dichalcogenide Nanocrystals in Rapidly Heated van der Waals Heterostructures. ACS APPLIED MATERIALS & INTERFACES 2023; 15:59693-59703. [PMID: 38090759 DOI: 10.1021/acsami.3c13471] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/28/2023]
Abstract
Two-dimensional materials, such as transition metal dichalcogenides (TMDCs), have the potential to revolutionize the field of electronics and photonics due to their unique physical and structural properties. This research presents a novel method for synthesizing crystalline TMDCs crystals with <10 nm size using ultrafast migration of vacancies at elevated temperatures. Through in situ and ex situ processing and using atomic-level characterization techniques, we analyzed the shape, size, crystallinity, composition, and strain distribution of these nanocrystals. These nanocrystals exhibit electronic structure signatures that differ from the 2D bulk: i.e., uniform mono- and multilayers. Further, our in situ, vacuum-based synthesis technique allows observation and comparison of defect and phase evolution in these crystals formed under van der Waals heterostructure confinement versus unconfined conditions. Overall, this research demonstrates a solid-state route to synthesizing uniform nanocrystals of TMDCs and lays the foundation for materials science in confined 2D spaces under extreme conditions.
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Affiliation(s)
- Pawan Kumar
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
- Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
- Inter-university Microelectronics Center (IMEC), Leuven 3001, Belgium
| | - Jiazheng Chen
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Andrew C Meng
- Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
- Department of Physics and Astronomy, University of Missouri, Columbia, Missouri 65211, United States
| | - Wei-Chang D Yang
- National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States
| | - Surendra B Anantharaman
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
- Low-dimensional Semiconductors Lab, Metallurgical and Materials Engineering, Indian Institute of Technology-Madras, Chennai, Tamilnadu 600036, India
| | - James P Horwath
- Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
- Argonne National Laboratory, Lemont, Illinois 60439, United States
| | - Juan C Idrobo
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830, United States
- Materials Science & Engineering, University of Washington, Seattle, Washington 98195, United States
| | - Himani Mishra
- Department of Mechanical Engineering and Texas Materials Institute, University of Texas, Austin, Texas 78712, United States
| | - Yuanyue Liu
- Department of Mechanical Engineering and Texas Materials Institute, University of Texas, Austin, Texas 78712, United States
| | - Albert V Davydov
- National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States
| | - Eric A Stach
- Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Deep Jariwala
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
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Lee HJ, Choe M, Yang W, Lee SW, Park YJ, Hwang H, Chhowalla M, Lee Z, Shin HS. Phase-Engineered WS 2 Monolayer Quantum Dots by Rhenium Doping. ACS NANO 2023; 17:25731-25738. [PMID: 38060370 DOI: 10.1021/acsnano.3c11086] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/27/2023]
Abstract
Transition metal dichalcogenides (TMDs) occur in the thermodynamically stable trigonal prismatic (2H) phase or the metastable octahedral (1T) phase. Phase engineering of TMDs has proven to be a powerful tool for applications in energy storage devices as well as in electrocatalysis. However, the mechanism of the phase transition in TMDs and the synthesis of phase-controlled TMDs remain challenging. Here we report the synthesis of Re-doped WS2 monolayer quantum dots (MQDs) using a simple colloidal chemical process. We find that the incorporation of a small amount of electron-rich Re atoms in WS2 changes the metal-metal distance in the 2H phase initially, which introduces strain in the structure (strained 2H (S2H) phase). Increasing the concentration of Re atoms sequentially transforms the S2H phase into the 1T and 1T' phases to release the strain. In addition, we performed controlled experiments by doping MoS2 with Re to distinguish between Re and Mo atoms in scanning transmission electron microscopy images and quantified the concentration range of Re atoms in each phase of MoS2, indicating that phase engineering of WS2 or MoS2 is possible by doping with different amounts of Re atoms. We demonstrate that the 1T' WS2 MQDs with 49 at. % Re show superior catalytic performance (a low Tafel slope of 44 mV/dec, a low overpotential of 158 mV at a current density of 10 mA/cm2, and long-term durability up to 5000 cycles) for the hydrogen evolution reaction. Our findings provide understanding and control of the phase transitions in TMDs, which will allow for the efficient manufacturing and translation of phase-engineered TMDs.
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Affiliation(s)
- Hoon Ju Lee
- Department of Chemistry, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
- Department of Energy Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Myeonggi Choe
- Center for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Weiguang Yang
- Department of Chemistry, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Suk Woo Lee
- Center for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Young Jin Park
- Department of Chemistry, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Hyuntae Hwang
- Department of Energy Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Manish Chhowalla
- Department of Materials Science and Metallurgy, University of Cambridge, Cambridge CB3 0FS, U.K
| | - Zonghoon Lee
- Center for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Hyeon Suk Shin
- Department of Chemistry, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
- Department of Energy Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
- Center for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
- Low Dimensional Carbon Materials Center, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
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Liu CL, Tseng YT, Huang CW, Lo HY, Hou AY, Wang CH, Yasuhara A, Wu WW. Atomic Imaging and Thermally Induced Dynamic Structural Evolution of Two-Dimensional Cr 2S 3. NANO LETTERS 2022; 22:7944-7951. [PMID: 36129470 DOI: 10.1021/acs.nanolett.2c02974] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
In this study, facile salt-assisted chemical vapor deposition (CVD) was used to synthesize ultrathin non-van der Waals chromium sulfide (Cr2S3) with a thickness of ∼1.9 nm. The structural transformation of as-grown Cr2S3 was studied using advanced in situ heating techniques combined with transmission electron microscopy (TEM). Two-dimensional (2D) and quasi-one-dimensional (1D) samples were fabricated to investigate the connection between specific planes and the dynamic behavior of the structural variation. The rearrangement of atoms during the phase transition was driven by the loss of sulfur atoms at elevated temperatures, resulting in increased free energy. A decrease in the ratio of the (001) plane led to an overall increase in surface energy, thus lowering the critical phase transition temperature. Our study provides detailed insight into the mechanism of structural transformation and the critical factors governing transition temperature, thus paving the way for future studies on intriguing Cr-S compounds.
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Affiliation(s)
- Chia-Ling Liu
- Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, No. 1001, University Road, East District, Hsinchu City 30010, Taiwan
| | - Yi-Tang Tseng
- Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, No. 1001, University Road, East District, Hsinchu City 30010, Taiwan
| | - Chun-Wei Huang
- Department of Materials Science and Engineering, Feng Chia University, No. 100, Wenhwa Road, Seatwen District, Taichung City 407802, Taiwan
| | - Hung-Yang Lo
- Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, No. 1001, University Road, East District, Hsinchu City 30010, Taiwan
| | - An-Yuan Hou
- Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, No. 1001, University Road, East District, Hsinchu City 30010, Taiwan
| | - Che-Hung Wang
- Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, No. 1001, University Road, East District, Hsinchu City 30010, Taiwan
| | - Akira Yasuhara
- EM Application Department of EM Business Unit, JEOL Ltd, 3-1-2 Musashino, Akishima, Tokyo 196-8558, Japan
| | - Wen-Wei Wu
- Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, No. 1001, University Road, East District, Hsinchu City 30010, Taiwan
- Center for the Intelligent Semiconductor Nanosystem Technology Research, National Yang Ming Chiao Tung University, No. 1001, University Road, East District, Hsinchu City 30010, Taiwan
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