Mass Production of Pt Single-Atom-Decorated Bismuth Sulfide for n-Type Environmentally Friendly Thermoelectrics

Bismuth Telluride Supported Sub-1 nm Polyoxometalate Cluster for High-Efficiency Thermoelectric Energy Conversion

Size plays a crucial role in chemistry and material science. Subnanometer polyoxometalate (POM) clusters have gained attention in various fields, but their use in thermoelectrics is still limited. To address this issue, we propose the POM clusters as an effective second phase to enhance the thermoelectric properties of Bi0.4Sb1.6Te3. Thanks to their subnanometer size, POM clusters improve electrical transport behavior through the superposition of atomic orbitals and the interfacial scattering effect. Furthermore, their ultrasmall size strongly reduces thermal conductivity. Consequently, the introduction of a mere 0.1 mol % of POM into the Bi0.4Sb1.6Te3 matrix realizes a state-of-the-art zT value of 1.46 at 348 K, a 45% enhancement over Bi0.4Sb1.6Te3 (1.01), along with a maximum thermoelectric-conversion efficiency of the integrated module of 6.0%. The enhancement of carrier mobility and the suppression of thermal conduction achieved by introducing the subnanometer clusters hold promise for various applications, such as electronic devices and thermal management.

First-Principles Study of Doped CdX(X = Te, Se) Compounds: Enhancing Thermoelectric Properties

Isovalent doping offers a method to enhance the thermoelectric properties of semiconductors, yet its influence on the phonon structure and propagation is often overlooked. Here, we take CdX (X=Te, Se) compounds as an example to study the role of isovalent doping in thermoelectrics by first-principles calculations in combination with the Boltzmann transport theory. The electronic and phononic properties of Cd8Se8, Cd8Se7Te, Cd8Te8, and Cd8Te7Se are compared. The results suggest that isovalent doping with CdX significantly improves the thermoelectric performance. Due to the similar properties of Se and Te atoms, the electronic properties remain unaffected. Moreover, doping enhances anharmonic phonon scattering, leading to a reduction in lattice thermal conductivity. Our results show that optimized p-type(n-type) ZT values can reach 3.13 (1.33) and 2.51 (1.21) for Cd8Te7Se and Cd8Se7Te at 900 K, respectively. This research illuminates the potential benefits of strategically employing isovalent doping to enhance the thermoelectric properties of CdX compounds.

Emerging Xene-Based Single-Atom Catalysts: Theory, Synthesis, and Catalytic Applications

In recent years, the emergence of novel 2D monoelemental materials (Xenes), e.g., graphdiyne, borophene, phosphorene, antimonene, bismuthene, and stanene, has exhibited unprecedented potentials for their versatile applications as well as addressing new discoveries in fundamental science. Owing to their unique physicochemical, optical, and electronic properties, emerging Xenes have been regarded as promising candidates in the community of single-atom catalysts (SACs) as single-atom active sites or support matrixes for significant improvement in intrinsic activity and selectivity. In order to comprehensively understand the relationships between the structure and property of Xene-based SACs, this review represents a comprehensive summary from theoretical predictions to experimental investigations. Firstly, theoretical calculations regarding both the anchoring of Xene-based single-atom active sites on versatile support matrixes and doping/substituting heteroatoms at Xene-based support matrixes are briefly summarized. Secondly, controlled synthesis and precise characterization are presented for Xene-based SACs. Finally, current challenges and future opportunities for the development of Xene-based SACs are highlighted.

Immersion-Driven Structural Evolution of NiFeS Nanosheets for Efficient Water Splitting

The development of low-cost, highly active, and stable electrocatalytic water-splitting catalysts is crucial to solving the current energy crisis and environmental pollution. Herein, a simple two-step conversion strategy is proposed to successfully prepare NiFeS nanosheet structure catalyst through the "immersion-sulfurization" strategy. The self-supported electrode can be prepared in large quantities due to its simple preparation process. As an active substance, NiFeS can grow directly on the NiFe foam substrate, avoiding the use of adhesives or conductive agents, and directly used as electrodes. The as-obtained NiFeS/NFF-300 displays efficient catalytic activity in electrocatalytic water splitting. The overpotential required for OER of the NiFeS/NFF-300 electrode at a current density of 10 mA cm-2 is 230 mV. The electrode underwent a stability test at 10 mA cm-2 for 24 h, and the overpotential remained essentially unchanged, demonstrating excellent stability. Moreover, NiFeS/NFF-300 exhibits considerable HER performances compared with NiFeC2O4/NFF and NiFe foam. The unique nanosheet structure and the presence of Niδ+ and Ni2+ formed by NiFe foam substrate on the NiFeS surface are responsible for its excellent electrocatalytic activity.

Hybridization Chain Reaction-Enhanced Biocatalytic Precipitation on Flower-like Bi2S3: Toward Organic Photoelectrochemical Transistor Aptasensing with High Transconductance

Organic photoelectrochemical transistor (OPECT) bioanalysis has recently emerged as a promising avenue for biomolecular sensing, providing insight into the next-generation of photoelectrochemical biosensing and organic bioelectronics. Herein, this work validates the direct enzymatic biocatalytic precipitation (BCP) modulation on a flower-like Bi₂S₃ photosensitive gate for high-efficacy OPECT operation with high transconductance (g_m), which is exemplified by a prostate-specific antigen (PSA)-dependent hybridization chain reaction (HCR) and subsequent alkaline phosphatase (ALP)-enabled BCP reaction toward PSA aptasensing. It has been shown that light illumination could ideally achieve the maximized g_m at zero gate bias, and BCP could efficiently modulate the device's interfacial capacitance and charge-transfer resistance, resulting in a significantly changed channel current (I_DS). The as-developed OPECT aptasensor realizes good analysis performance for PSA with a detection limit of 10 fg mL^-1. This work features direct BCP modulation of organic transistors and is expected to stimulate further interest in exploring advanced BCP-interfaced bioelectronics with unknown possibilities.

Layer-Structured Anisotropic Metal Chalcogenides: Recent Advances in Synthesis, Modulation, and Applications

The unique electronic and catalytic properties emerging from low symmetry anisotropic (1D and 2D) metal chalcogenides (MCs) have generated tremendous interest for use in next generation electronics, optoelectronics, electrochemical energy storage devices, and chemical sensing devices. Despite many proof-of-concept demonstrations so far, the full potential of anisotropic chalcogenides has yet to be investigated. This article provides a comprehensive overview of the recent progress made in the synthesis, mechanistic understanding, property modulation strategies, and applications of the anisotropic chalcogenides. It begins with an introduction to the basic crystal structures, and then the unique physical and chemical properties of 1D and 2D MCs. Controlled synthetic routes for anisotropic MC crystals are summarized with example advances in the solution-phase synthesis, vapor-phase synthesis, and exfoliation. Several important approaches to modulate dimensions, phases, compositions, defects, and heterostructures of anisotropic MCs are discussed. Recent significant advances in applications are highlighted for electronics, optoelectronic devices, catalysts, batteries, supercapacitors, sensing platforms, and thermoelectric devices. The article ends with prospects for future opportunities and challenges to be addressed in the academic research and practical engineering of anisotropic MCs.

Strong charge carrier scattering at grain boundaries of PbTe caused by the collapse of metavalent bonding

Grain boundaries (GBs) play a significant role in controlling the transport of mass, heat and charge. To unravel the mechanisms underpinning the charge carrier scattering at GBs, correlative microscopy combined with local transport measurements is realized. For the PbTe material, the strength of carrier scattering at GBs depends on its misorientation angle. A concomitant change in the barrier height is observed, significantly increasing from low- to high-angle GBs. Atom probe tomography measurements reveal a disruption of metavalent bonding (MVB) at the dislocation cores of low-angle GBs, as evidenced by the abrupt change in bond-rupture behavior. In contrast, MVB is completely destroyed at high-angle GBs, presumably due to the increased Peierls distortion. The collapse of MVB is accompanied by a breakdown of the dielectric screening, which explains the enlarged GB barrier height. These findings correlate charge carrier scattering with bonding locally, promising new avenues for the design of advanced functional materials.