Monolayer NbSe2 Favors Ultralow Friction and Super Wear Resistance

Observing and Modeling the Wear Process of Heterogeneous Interface

Understanding and controlling the wear process of heterogeneous interfaces between soft and hard phases is crucial for designing and fabricating materials, such as improving the wear resistance of particle reinforced metal matrix composites and the accuracy and efficiency of chemical mechanical polishing. However, the wear process can be hardly observed, as interfaces are buried under the surface. Here, we proposed a nanowear test method by combining focused ion beam cutting to expose interfaces, atomic force microscopy to rub against interfaces, and scanning electron microscope to characterize the interface damage. Using this method, three typical wear forms had been observed in Al/SiC composite, i.e., merely matrix wear, particle fracture, and particle pullout. A theoretical model was proposed that revealed that the increasing interfacial friction would induce particle fracture or pullout, depending on the particle edge angle and tip edge angle. This work sheds light on wear control in composites and nanofabrication.

Fundamental Limits of Few-Layer NbSe2 Microbolometers at Terahertz Frequencies

The rapid development of infrared spectroscopy, observational astronomy, and scanning near-field microscopy has been enabled by the emergence of sensitive mid- and far-infrared photodetectors. Superconducting hot-electron bolometers (HEBs), known for their exceptional signal-to-noise ratio and fast photoresponse, play a crucial role in these applications. While superconducting HEBs are traditionally crafted from sputtered thin films such as NbN, the potential of layered van der Waals (vdW) superconductors is untapped at THz frequencies. Here, we introduce superconducting HEBs made from few-layer NbSe2 microwires. By improving the interface between NbSe2 and metal leads, we overcome impedance mismatch with RF readout, enabling large responsivity THz detection (0.13 to 2.5 THz) with a minimal noise equivalent power of 7 pW/ H z and nanosecond-range response time. Our work highlights NbSe2 as a promising platform for HEB technology and presents a reliable vdW assembly protocol for custom bolometer production.