1
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Guo L, Sun H, Min L, Wang M, Cao F, Li L. Two-Terminal Perovskite Optoelectronic Synapse for Rapid Trained Neuromorphic Computation with High Accuracy. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2402253. [PMID: 38553842 DOI: 10.1002/adma.202402253] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/12/2024] [Revised: 03/16/2024] [Indexed: 04/09/2024]
Abstract
Emerging neural morphological vision sensors inspired by biological systems that integrate image perception, memory, and information computing are expected to transform the landscape of machine vision and artificial intelligence. However, stable and reconfigurable light-induced synaptic behavior always relies on independent gateport modulation. Despite its potential, the limitations of uncontrollable defects and ionic characteristics have led to simpler, smaller, and more integration-friendly two-terminal devices being used as sidelines. In this work, the synergy between ion migration barriers and readout voltage is proven to be the key to realizing stable, reconfigurable, and precisely controllable postsynaptic current in two-terminal devices. Following the same mechanism, optical and electrical signal synchronous triggering is proposed to serve as a preprocessing method to achieve a recognition accuracy of 96.5%. Impressively, the gradual ion accumulation during the training process induces photocurrent evolution, serving as a reference for the dynamic learning rate and boosting accuracy to 97.8% in just 10 epochs. The PSC modulation potential under short optical pulse of 20 ns is also revealed. This optoelectronic device with perception, memory, and computation capabilities can promote the development of new devices for future photonic neural morphological circuits and artificial vision.
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Affiliation(s)
- Linqi Guo
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Center for Energy Conversion Materials & Physics (CECMP), Soochow University, Suzhou, 215006, P. R. China
| | - Haoxuan Sun
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Center for Energy Conversion Materials & Physics (CECMP), Soochow University, Suzhou, 215006, P. R. China
| | - Liangliang Min
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Center for Energy Conversion Materials & Physics (CECMP), Soochow University, Suzhou, 215006, P. R. China
| | - Meng Wang
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Center for Energy Conversion Materials & Physics (CECMP), Soochow University, Suzhou, 215006, P. R. China
| | - Fengren Cao
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Center for Energy Conversion Materials & Physics (CECMP), Soochow University, Suzhou, 215006, P. R. China
| | - Liang Li
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Center for Energy Conversion Materials & Physics (CECMP), Soochow University, Suzhou, 215006, P. R. China
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2
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Panisilvam J, Lee HY, Byun S, Fan D, Kim S. Two-dimensional material-based memristive devices for alternative computing. NANO CONVERGENCE 2024; 11:25. [PMID: 38937391 PMCID: PMC11211314 DOI: 10.1186/s40580-024-00432-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/01/2024] [Accepted: 06/14/2024] [Indexed: 06/29/2024]
Abstract
Two-dimensional (2D) materials have emerged as promising building blocks for next generation memristive devices, owing to their unique electronic, mechanical, and thermal properties, resulting in effective switching mechanisms for charge transport. Memristors are key components in a wide range of applications including neuromorphic computing, which is becoming increasingly important in artificial intelligence applications. Crossbar arrays are an important component in the development of hardware-based neural networks composed of 2D materials. In this paper, we summarize the current state of research on 2D material-based memristive devices utilizing different switching mechanisms, along with the application of these devices in neuromorphic crossbar arrays. Additionally, we discuss the challenges and future directions for the field.
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Affiliation(s)
- Jey Panisilvam
- Department of Electrical and Electronic Engineering, Faculty of Engineering and Information Technology, University of Melbourne, Melbourne, 3000, Australia
| | - Ha Young Lee
- Department of Electrical and Electronic Engineering, Faculty of Engineering and Information Technology, University of Melbourne, Melbourne, 3000, Australia
| | - Sujeong Byun
- Department of Electrical and Electronic Engineering, Faculty of Engineering and Information Technology, University of Melbourne, Melbourne, 3000, Australia
| | - Daniel Fan
- Department of Electrical and Electronic Engineering, Faculty of Engineering and Information Technology, University of Melbourne, Melbourne, 3000, Australia
| | - Sejeong Kim
- Department of Electrical and Electronic Engineering, Faculty of Engineering and Information Technology, University of Melbourne, Melbourne, 3000, Australia.
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3
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Lee Y, Huang Y, Chang YF, Yang SJ, Ignacio ND, Kutagulla S, Mohan S, Kim S, Lee J, Akinwande D, Kim S. Programmable Retention Characteristics in MoS 2-Based Atomristors for Neuromorphic and Reservoir Computing Systems. ACS NANO 2024; 18:14327-14338. [PMID: 38767980 DOI: 10.1021/acsnano.4c00333] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/22/2024]
Abstract
In this study, we investigate the coexistence of short- and long-term memory effects owing to the programmable retention characteristics of a two-dimensional Au/MoS2/Au atomristor device and determine the impact of these effects on synaptic properties. This device is constructed using bilayer MoS2 in a crossbar structure. The presence of both short- and long-term memory characteristics is proposed by using a filament model within the bilayer transition-metal dichalcogenide. Short- and long-term properties are validated based on programmable multilevel retention tests. Moreover, we confirm various synaptic characteristics of the device, demonstrating its potential use as a synaptic device in a neuromorphic system. Excitatory postsynaptic current, paired-pulse facilitation, spike-rate-dependent plasticity, and spike-number-dependent plasticity synaptic applications are implemented by operating the device at a low-conductance level. Furthermore, long-term potentiation and depression exhibit symmetrical properties at high-conductance levels. Synaptic learning and forgetting characteristics are emulated using programmable retention properties and composite synaptic plasticity. The learning process of artificial neural networks is used to achieve high pattern recognition accuracy, thereby demonstrating the suitability of the use of the device in a neuromorphic system. Finally, the device is used as a physical reservoir with time-dependent inputs to realize reservoir computing by using short-term memory properties. Our study reveals that the proposed device can be applied in artificial intelligence-based computing applications by utilizing its programmable retention properties.
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Affiliation(s)
- Yoonseok Lee
- Division of Electronics and Electrical Engineering, Dongguk University, Seoul, Seoul 04620, Korea
- Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758, United States
| | - Yifu Huang
- Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758, United States
| | - Yao-Feng Chang
- Intel Corporation, Hillsboro, Oregon 97124, United States
| | - Sung Jin Yang
- Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758, United States
| | - Nicholas D Ignacio
- Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758, United States
| | - Shanmukh Kutagulla
- Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758, United States
| | - Sivasakthya Mohan
- Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758, United States
| | - Sunghun Kim
- Division of Electronics and Electrical Engineering, Dongguk University, Seoul, Seoul 04620, Korea
| | - Jungwoo Lee
- Division of Electronics and Electrical Engineering, Dongguk University, Seoul, Seoul 04620, Korea
| | - Deji Akinwande
- Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758, United States
| | - Sungjun Kim
- Division of Electronics and Electrical Engineering, Dongguk University, Seoul, Seoul 04620, Korea
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4
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Wang YJ, Yang ZL, Chen JW, Zhu R, Hsieh SH, Chang SH, Lin HY, Lin CL, Chen YC, Chen CH, Huang BC, Chiu YP, Yeh CH, Gao P, Chiu PW, Chen YC, Chu YH. Nonvolatile Modulation of Bi 2O 2Se/Pb(Zr,Ti)O 3 Heteroepitaxy. ACS APPLIED MATERIALS & INTERFACES 2024; 16:27523-27531. [PMID: 38745497 PMCID: PMC11145581 DOI: 10.1021/acsami.4c02525] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/13/2024] [Revised: 04/05/2024] [Accepted: 05/07/2024] [Indexed: 05/16/2024]
Abstract
The pursuit of high-performance electronic devices has driven the research focus toward 2D semiconductors with high electron mobility and suitable band gaps. Previous studies have demonstrated that quasi-2D Bi2O2Se (BOSe) has remarkable physical properties and is a promising candidate for further exploration. Building upon this foundation, the present work introduces a novel concept for achieving nonvolatile and reversible control of BOSe's electronic properties. The approach involves the epitaxial integration of a ferroelectric PbZr0.2Ti0.8O3 (PZT) layer to modify BOSe's band alignment. Within the BOSe/PZT heteroepitaxy, through two opposite ferroelectric polarization states of the PZT layer, we can tune the Fermi level in the BOSe layer. Consequently, this controlled modulation of the electronic structure provides a pathway to manipulate the electrical properties of the BOSe layer and the corresponding devices.
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Affiliation(s)
- Yong-Jyun Wang
- Department
of Materials Science and Engineering, National
Tsing Hua University, Hsinchu 300044, Taiwan
| | - Zi-Liang Yang
- Graduate
School of Advanced Technology, National
Taiwan University, Taipei 106319, Taiwan
| | - Jia-Wei Chen
- Department
of Materials Science and Engineering, National
Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan
| | - Ruixue Zhu
- International
Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
- Electron
Microscopy Laboratory, School of Physics, Peking University, Beijing 100871, China
| | - Shang-Hsien Hsieh
- National
Synchrotron Radiation Research Center, Hsinchu 300092, Taiwan
| | - Sen-Hao Chang
- Department
of Electrophysics, National Yang Ming Chiao
Tung University, Hsinchu 300093, Taiwan
| | - Hong-Yuan Lin
- Department
of Physics, National Cheng Kung University, Tainan 701401, Taiwan
| | - Chun-Liang Lin
- Department
of Electrophysics, National Yang Ming Chiao
Tung University, Hsinchu 300093, Taiwan
| | - Yi-Chun Chen
- Department
of Physics, National Cheng Kung University, Tainan 701401, Taiwan
| | - Chia-Hao Chen
- National
Synchrotron Radiation Research Center, Hsinchu 300092, Taiwan
| | - Bo-Chao Huang
- Department
of Physics, National Taiwan University, Taipei 106319, Taiwan
| | - Ya-Ping Chiu
- Graduate
School of Advanced Technology, National
Taiwan University, Taipei 106319, Taiwan
- Department
of Physics, National Taiwan University, Taipei 106319, Taiwan
| | - Chao-Hui Yeh
- Department
of Electrical Engineering, National Tsing
Hua University, Hsinchu 300044, Taiwan
| | - Peng Gao
- International
Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
- Electron
Microscopy Laboratory, School of Physics, Peking University, Beijing 100871, China
| | - Po-Wen Chiu
- Department
of Electrical Engineering, National Tsing
Hua University, Hsinchu 300044, Taiwan
| | - Yi-Cheng Chen
- Department
of Materials Science and Engineering, National
Tsing Hua University, Hsinchu 300044, Taiwan
| | - Ying-Hao Chu
- Department
of Materials Science and Engineering, National
Tsing Hua University, Hsinchu 300044, Taiwan
- Department
of Materials Science and Engineering, National
Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan
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5
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Yadav R, Poudyal S, Rajarapu R, Biswal B, Barman PK, Kasiviswanathan S, Novoselov KS, Misra A. Low Power Volatile and Nonvolatile Memristive Devices from 1D MoO 2-MoS 2 Core-Shell Heterostructures for Future Bio-Inspired Computing. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2309163. [PMID: 38150637 DOI: 10.1002/smll.202309163] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/11/2023] [Revised: 12/05/2023] [Indexed: 12/29/2023]
Abstract
Memristors-based integrated circuits for emerging bio-inspired computing paradigms require an integrated approach utilizing both volatile and nonvolatile memristive devices. Here, an innovative architecture comprising of 1D CVD-grown core-shell heterostructures (CSHSs) of MoO2-MoS2 is employed as memristors manifesting both volatile switching (with high selectivity of 107 and steep slope of 0.6 mV decade-1) and nonvolatile switching phenomena (with Ion/Ioff ≈103 and switching speed of 60 ns). In these CSHSs, the metallic core MoO2 with high current carrying capacity provides a conformal and immaculate interface with semiconducting MoS2 shells and therefore it acts as a bottom electrode for the memristors. The power consumption in volatile devices is as low as 50 pW per set transition and 0.1 fW in standby mode. Voltage-driven current spikes are observed for volatile devices while with nonvolatile memristors, key features of a biological synapse such as short/long-term plasticity and paired pulse facilitation are emulated suggesting their potential for the development of neuromorphic circuits. These CSHSs offer an unprecedented solution for the interfacial issues between metallic electrodes and the layered materials-based switching element with the prospects of developing smaller footprint memristive devices for future integrated circuits.
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Affiliation(s)
- Renu Yadav
- Department of Physics, Indian Institute of Technology Madras, Chennai, 600036, India
- Centre for 2D Materials Research and Innovation, Indian Institute of Technology Madras, Chennai, 600036, India
| | - Saroj Poudyal
- Department of Physics, Indian Institute of Technology Madras, Chennai, 600036, India
- Centre for 2D Materials Research and Innovation, Indian Institute of Technology Madras, Chennai, 600036, India
| | - Ramesh Rajarapu
- Department of Physics, Indian Institute of Technology Madras, Chennai, 600036, India
- Centre for 2D Materials Research and Innovation, Indian Institute of Technology Madras, Chennai, 600036, India
| | - Bubunu Biswal
- Department of Physics, Indian Institute of Technology Madras, Chennai, 600036, India
- Centre for 2D Materials Research and Innovation, Indian Institute of Technology Madras, Chennai, 600036, India
| | - Prahalad Kanti Barman
- Department of Physics, Indian Institute of Technology Madras, Chennai, 600036, India
- Centre for 2D Materials Research and Innovation, Indian Institute of Technology Madras, Chennai, 600036, India
| | - S Kasiviswanathan
- Department of Physics, Indian Institute of Technology Madras, Chennai, 600036, India
| | - Kostya S Novoselov
- Institute for Functional Intelligent Materials, National University of Singapore, Singapore, 117544, Singapore
| | - Abhishek Misra
- Department of Physics, Indian Institute of Technology Madras, Chennai, 600036, India
- Centre for 2D Materials Research and Innovation, Indian Institute of Technology Madras, Chennai, 600036, India
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6
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Dong X, Sun H, Lai X, Yang F, Ma T, Zhang X, Chen J, Zhao Y, Chen J, Zhang X, Li Y. MoO x Synaptic Memristor with Programmable Multilevel Conductance for Reliable Neuromorphic Hardware. J Phys Chem Lett 2024; 15:3668-3676. [PMID: 38535723 DOI: 10.1021/acs.jpclett.4c00600] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 04/05/2024]
Abstract
Memristor holds great potential for enabling next-generation neuromorphic computing hardware. Controlling the interfacial characteristics of the device is critical for seamlessly integrating and replicating the synaptic dynamic behaviors; however, it is commonly overlooked. Herein, we report the straightforward oxidation of a Mo electrode in air to design MoOx memristors that exhibit nonvolatile ultrafast switching (0.6-0.8 mV/decade, <1 mV/decade) with a high on/off ratio (>104), a long durability (>104 s), a low power consumption (17.9 μW), excellent device-to-device uniformity, ingeniously synaptic behavior, and finely programmable multilevel analog switching. The analyzed physical mechanism of the observed resistive switching behavior might be the conductive filaments formed by the oxygen vacancies. Intriguingly, upon organization into memristor-based crossbar arrays, in addition to simulated multipattern memorization, edge detection on random images can be implemented well by parallel processing of pixels using a 3 × 3 × 2 array of Prewitt filter groups. These are vital functions for neural system hardware in efficient in-memory computing neural systems with massive parallelism beyond a von Neumann architecture.
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Affiliation(s)
- Xiaofei Dong
- Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
| | - Hao Sun
- Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
| | - Xinhua Lai
- Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
| | - Fengxia Yang
- Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
| | - Tingting Ma
- Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
| | - Xiang Zhang
- Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
| | - Jianbiao Chen
- Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
| | - Yun Zhao
- Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
| | - Jiangtao Chen
- Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
| | - Xuqiang Zhang
- Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
| | - Yan Li
- Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
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7
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Xie F, Ma Z, Zhou J. Optimizing Thermoelectric Performance of Hybrid Crystals Bi 2O 2Se 1-xTe x in the Bi 2O 2X System. MATERIALS (BASEL, SWITZERLAND) 2024; 17:1509. [PMID: 38612024 PMCID: PMC11012295 DOI: 10.3390/ma17071509] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/11/2024] [Revised: 03/22/2024] [Accepted: 03/25/2024] [Indexed: 04/14/2024]
Abstract
In addressing the global need for sustainable energy conversion, this study presents a breakthrough in thermoelectric materials research by optimizing the Bi2O2Se1-xTex system in the Bi2O2Se/Bi2O2Te pseudobinary series. Leveraging the principles of innovative transport mechanisms and defect engineering, we introduce tellurium (Te) doping into Bi2O2Se to enhance its thermoelectric properties synergistically. With the help of various advanced characterization tools such as XRD, SEM, TEM, XPS, FTIR, TGA, LFA, and DSC, combined with relevant resistance and density measurement techniques, we conducted an in-depth exploration of the complex interactions between various factors within thermoelectric materials. We recognize that the balance and synergy of these factors in the thermoelectric conversion process are crucial to achieving efficient energy conversion. Through systematic research, we are committed to revealing the mechanisms of these interactions and providing a solid scientific foundation for the optimal design and performance enhancement of thermoelectric materials. Finally, the advantage coefficient (ZT) of the thermoelectric material has been significantly improved. The crystallographic analysis confirms the formation of a continuous series of mixed crystals with varying Te concentrations, adhering to Vegard's law and exhibiting significant improvements in electrical and thermal conductivities. The Bi2O2Se1-xTex crystals, particularly the Bi2O2Se0.6Te0.4 composition, demonstrate a peak ZT of 0.86 at 373 K. This achievement aligns with recent advancements in defect-enabled mechanisms and band convergence and sets a new standard for high-performance thermoelectrics. The study's findings contribute significantly to the ongoing quest for efficient thermal-to-electrical energy conversion, offering a promising avenue for future sustainable energy technologies.
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Affiliation(s)
| | | | - Jian Zhou
- School of Materials Science and Engineering, Key Laboratory for Polymeric Composite and Functional Materials of Ministry of Education, Guangzhou Key Laboratory of Flexible Electronic Materials and Wearable Devices, Laboratory of Advanced Electronics and Fiber Materials, Sun Yat-Sen University, Guangzhou 510275, China; (F.X.); (Z.M.)
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8
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Wang G, Sun F, Zhou S, Zhang Y, Zhang F, Wang H, Huang J, Zheng Y. Enhanced Memristive Performance via a Vertically Heterointerface in Nanocomposite Thin Films for Artificial Synapses. ACS APPLIED MATERIALS & INTERFACES 2024; 16:12073-12084. [PMID: 38381527 DOI: 10.1021/acsami.3c18146] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/23/2024]
Abstract
Memristors can be used to mimic synaptic behavior in artificial neural networks, which makes them a key component in neuromorphic computing and holds promise for advancing the field. In this study, a memory artificial synaptic device based on ZnO-BaTiO3 (ZnO-BTO) vertically aligned nanocomposite thin films was prepared. The vertical interface between the two phases can be used as a conduit for oxygen vacancy (OV) accumulation and a channel for OV movement, which greatly optimizes the resistive switching performance of the device and has the potential for multistage storage. By applying different pulse sequences to the device, the conductance of the device is adjusted from multiple angles, and a variety of synaptic functions are simulated, such as paired-pulse facilitation, spike-timing-dependent plasticity, short-term plasticity to long-term plasticity (STP-LTP), and long-term potentiation/depression (LTP/LTD). Finally, we construct a neural network for image recognition, and the recognition accuracy can reach 91%. Our study demonstrates the feasibility of using composite thin-film vertical interface to regulate the resistive performance of memristors and its great potential in artificial synaptic simulation and neuromorphic computing.
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Affiliation(s)
- Guoliang Wang
- School of Materials, Shenzhen Campus of Sun Yat-sen University, Shenzhen 518107, China
- State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
| | - Fei Sun
- School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
| | - Shiyu Zhou
- School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | - Yizhi Zhang
- School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | - Fan Zhang
- School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
| | - Haiyan Wang
- School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | - Jijie Huang
- School of Materials, Shenzhen Campus of Sun Yat-sen University, Shenzhen 518107, China
- State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
| | - Yue Zheng
- School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
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9
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Xi J, Yang H, Li X, Wei R, Zhang T, Dong L, Yang Z, Yuan Z, Sun J, Hua Q. Recent Advances in Tactile Sensory Systems: Mechanisms, Fabrication, and Applications. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:465. [PMID: 38470794 DOI: 10.3390/nano14050465] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/18/2024] [Revised: 02/07/2024] [Accepted: 02/19/2024] [Indexed: 03/14/2024]
Abstract
Flexible electronics is a cutting-edge field that has paved the way for artificial tactile systems that mimic biological functions of sensing mechanical stimuli. These systems have an immense potential to enhance human-machine interactions (HMIs). However, tactile sensing still faces formidable challenges in delivering precise and nuanced feedback, such as achieving a high sensitivity to emulate human touch, coping with environmental variability, and devising algorithms that can effectively interpret tactile data for meaningful interactions in diverse contexts. In this review, we summarize the recent advances of tactile sensory systems, such as piezoresistive, capacitive, piezoelectric, and triboelectric tactile sensors. We also review the state-of-the-art fabrication techniques for artificial tactile sensors. Next, we focus on the potential applications of HMIs, such as intelligent robotics, wearable devices, prosthetics, and medical healthcare. Finally, we conclude with the challenges and future development trends of tactile sensors.
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Affiliation(s)
- Jianguo Xi
- School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China
| | - Huaiwen Yang
- School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China
| | - Xinyu Li
- School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China
| | - Ruilai Wei
- School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China
- Institute of Flexible Electronics, Beijing Institute of Technology, Beijing 102488, China
| | - Taiping Zhang
- Tianfu Xinglong Lake Laboratory, Chengdu 610299, China
| | - Lin Dong
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Materials Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450001, China
| | - Zhenjun Yang
- Hefei Hospital Affiliated to Anhui Medical University (The Second People's Hospital of Hefei), Hefei 230011, China
| | - Zuqing Yuan
- School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China
- Institute of Flexible Electronics, Beijing Institute of Technology, Beijing 102488, China
| | - Junlu Sun
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Materials Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450001, China
| | - Qilin Hua
- School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China
- Institute of Flexible Electronics, Beijing Institute of Technology, Beijing 102488, China
- Guangxi Key Laboratory of Brain-Inspired Computing and Intelligent Chips, Guangxi Normal University, Guilin 541004, China
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10
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Qiu J, Li J, Li W, Wang K, Xiao T, Su H, Suk CH, Zhou X, Zhang Y, Guo T, Wu C, Ooi PC, Kim TW. Silver Nanowire Networks with Moisture-Enhanced Learning Ability. ACS APPLIED MATERIALS & INTERFACES 2024; 16:10361-10371. [PMID: 38362885 DOI: 10.1021/acsami.3c17438] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/17/2024]
Abstract
The human brain possesses a remarkable ability to memorize information with the assistance of a specific external environment. Therefore, mimicking the human brain's environment-enhanced learning abilities in artificial electronic devices is essential but remains a considerable challenge. Here, a network of Ag nanowires with a moisture-enhanced learning ability, which can mimic long-term potentiation (LTP) synaptic plasticity at an ultralow operating voltage as low as 0.01 V, is presented. To realize a moisture-enhanced learning ability and to adjust the aggregations of Ag ions, we introduced a thin polyvinylpyrrolidone (PVP) coating layer with moisture-sensitive properties to the surfaces of the Ag nanowires of Ag ions. That Ag nanowire network was shown to exhibit, in response to the humidity of its operating environment, different learning speeds during the LTP process. In high-humidity environments, the synaptic plasticity was significantly strengthened with a higher learning speed compared with that in relatively low-humidity environments. Based on experimental and simulation results, we attribute this enhancement to the higher electric mobility of the Ag ions in the water-absorbed PVP layer. Finally, we demonstrated by simulation that the moisture-enhanced synaptic plasticity enabled the device to adjust connection weights and delivery modes based on various input patterns. The recognition rate of a handwritten data set reached 94.5% with fewer epochs in a high-humidity environment. This work shows the feasibility of building our electronic device to achieve artificial adaptive learning abilities.
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Affiliation(s)
- Jiawen Qiu
- College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China
| | - Junlong Li
- College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China
| | - Wenhao Li
- College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China
| | - Kun Wang
- College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China
| | - Tianyu Xiao
- College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China
| | - Hao Su
- College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China
| | - Chan Hee Suk
- Department of Electronic and Computer Engineering, Hanyang University, Seoul 04763, Republic of Korea
| | - Xiongtu Zhou
- College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350108, China
| | - Yongai Zhang
- College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350108, China
| | - Tailiang Guo
- College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350108, China
| | - Chaoxing Wu
- College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350108, China
| | - Poh Choon Ooi
- Institute of Microengineering and Nanoelectronics (IMEN), University Kebangsaan Malaysia, 43600 Bangi, Selangor, Malaysia
| | - Tae Whan Kim
- Department of Electronic and Computer Engineering, Hanyang University, Seoul 04763, Republic of Korea
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Hua Q, Shen G. Low-dimensional nanostructures for monolithic 3D-integrated flexible and stretchable electronics. Chem Soc Rev 2024; 53:1316-1353. [PMID: 38196334 DOI: 10.1039/d3cs00918a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/11/2024]
Abstract
Flexible/stretchable electronics, which are characterized by their ultrathin design, lightweight structure, and excellent mechanical robustness and conformability, have garnered significant attention due to their unprecedented potential in healthcare, advanced robotics, and human-machine interface technologies. An increasing number of low-dimensional nanostructures with exceptional mechanical, electronic, and/or optical properties are being developed for flexible/stretchable electronics to fulfill the functional and application requirements of information sensing, processing, and interactive loops. Compared to the traditional single-layer format, which has a restricted design space, a monolithic three-dimensional (M3D) integrated device architecture offers greater flexibility and stretchability for electronic devices, achieving a high-level of integration to accommodate the state-of-the-art design targets, such as skin-comfort, miniaturization, and multi-functionality. Low-dimensional nanostructures possess small size, unique characteristics, flexible/elastic adaptability, and effective vertical stacking capability, boosting the advancement of M3D-integrated flexible/stretchable systems. In this review, we provide a summary of the typical low-dimensional nanostructures found in semiconductor, interconnect, and substrate materials, and discuss the design rules of flexible/stretchable devices for intelligent sensing and data processing. Furthermore, artificial sensory systems in 3D integration have been reviewed, highlighting the advancements in flexible/stretchable electronics that are deployed with high-density, energy-efficiency, and multi-functionalities. Finally, we discuss the technical challenges and advanced methodologies involved in the design and optimization of low-dimensional nanostructures, to achieve monolithic 3D-integrated flexible/stretchable multi-sensory systems.
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Affiliation(s)
- Qilin Hua
- School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China.
- Institute of Flexible Electronics, Beijing Institute of Technology, Beijing 102488, China
| | - Guozhen Shen
- School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China.
- Institute of Flexible Electronics, Beijing Institute of Technology, Beijing 102488, China
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