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Dragoman M, Dinescu A, Aldrigo M, Dragoman D. Quantum Graphene Asymmetric Devices for Harvesting Electromagnetic Energy. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:1114. [PMID: 38998720 PMCID: PMC11243634 DOI: 10.3390/nano14131114] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/30/2024] [Revised: 06/26/2024] [Accepted: 06/27/2024] [Indexed: 07/14/2024]
Abstract
We present here the fabrication at the wafer level and the electrical performance of two types of graphene diodes: ballistic trapezoidal-shaped graphene diodes and lateral tunneling graphene diodes. In the case of the ballistic trapezoidal-shaped graphene diode, we observe a large DC current of 200 µA at a DC bias voltage of ±2 V and a large voltage responsivity of 2000 v/w, while in the case of the lateral tunneling graphene diodes, we obtain a DC current of 1.5 mA at a DC bias voltage of ±2 V, with a voltage responsivity of 3000 v/w. An extended analysis of the defects produced during the fabrication process and their influences on the graphene diode performance is also presented.
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Affiliation(s)
- Mircea Dragoman
- National Institute for Research and Development in Microtechnologies (IMT), Strada Erou Iancu Nicolae 126A, 077190 Voluntari, Romania
| | - Adrian Dinescu
- National Institute for Research and Development in Microtechnologies (IMT), Strada Erou Iancu Nicolae 126A, 077190 Voluntari, Romania
| | - Martino Aldrigo
- National Institute for Research and Development in Microtechnologies (IMT), Strada Erou Iancu Nicolae 126A, 077190 Voluntari, Romania
| | - Daniela Dragoman
- Physics Faculty, University of Bucharest, P.O. Box MG-11, 077125 Bucharest, Romania
- Academy of Romanian Scientists, Strada Ilfov, Nr. 3, 050044 Bucharest, Romania
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Wang F, Zhu S, Chen W, Han J, Duan R, Wang C, Dai M, Sun F, Jin Y, Wang QJ. Multidimensional detection enabled by twisted black arsenic-phosphorus homojunctions. NATURE NANOTECHNOLOGY 2024; 19:455-462. [PMID: 38225358 DOI: 10.1038/s41565-023-01593-y] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/04/2023] [Accepted: 12/12/2023] [Indexed: 01/17/2024]
Abstract
A light field carrying multidimensional optical information, including but not limited to polarization, intensity and wavelength, is essential for numerous applications such as environmental monitoring, thermal imaging, medical diagnosis and free-space communications. Simultaneous acquisition of this multidimensional information could provide comprehensive insights for understanding complex environments but remains a challenge. Here we demonstrate a multidimensional optical information detection device based on zero-bias double twisted black arsenic-phosphorus homojunctions, where the photoresponse is dominated by the photothermoelectric effect. By using a bipolar and phase-offset polarization photoresponse, the device operated in the mid-infrared range can simultaneously detect both the polarization angle and incident intensity information through direct measurement of the photocurrents in the double twisted black arsenic-phosphorus homojunctions. The device's responsivity makes it possible to retrieve wavelength information, typically perceived as difficult to obtain. Moreover, the device exhibits an electrically tunable polarization photoresponse, enabling precise distinction of polarization angles under low-intensity light exposure. These demonstrations offer a promising approach for simultaneous detection of multidimensional optical information, indicating potential for diverse photonic applications.
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Affiliation(s)
- Fakun Wang
- School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore, Singapore
| | - Song Zhu
- School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore, Singapore
| | - Wenduo Chen
- School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore, Singapore
| | - Jiayue Han
- School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore, Singapore
| | - Ruihuan Duan
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, Singapore
| | - Chongwu Wang
- School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore, Singapore
| | - Mingjin Dai
- School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore, Singapore
| | - Fangyuan Sun
- School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore, Singapore
| | - Yuhao Jin
- School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore, Singapore
| | - Qi Jie Wang
- School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore, Singapore.
- Centre for Disruptive Photonic Technologies, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore.
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Liu C, Zheng T, Shu K, Shu S, Lan Z, Yang M, Zheng Z, Huo N, Gao W, Li J. Polarization-Sensitive Self-Powered Schottky Photodetector with High Photovoltaic Performance Induced by Geometry-Asymmetric Contacts. ACS APPLIED MATERIALS & INTERFACES 2024; 16:13914-13926. [PMID: 38447591 DOI: 10.1021/acsami.3c16047] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/08/2024]
Abstract
Polarization-sensitive photodetectors have attracted considerable attention owing to their potential application prospects in navigation, optical switching, and communication. However, it remains challenging to develop a facile and effective strategy to simultaneously meet the demands of low power consumption, high performance, and excellent polarization sensitivity. Herein, a series of low-symmetry two-dimensional (2D) ReSe2 Schottky photodetectors with geometry-asymmetric contacts are constructed. These devices exhibit excellent photoelectrical performance and impressive polarization sensitivity in the self-powered mode owing to the difference in the Schottky barrier height induced by the asymmetric contact areas, interfacial states, and thickness difference. Particularly, an outstanding responsivity of 379 mA/W, a decent specific detectivity of 6.8 × 1011 Jones, and a high light on/off ratio (Ilight/Idark) of over 105 under 635 nm light illumination are achieved. Scanning photocurrent mapping (SPCM) measurements further confirm that the ReSe2/drain overlapped region (corresponding to the smaller contact area side) with a higher Schottky barrier height plays a dominant role in the generation of photocurrent. Furthermore, the proposed device displays impressive polarization ratios (PRs) of 3.1 and 3.6 at zero bias under 635 and 808 nm irradiation, respectively. The high-resolution single-pixel imaging capability is also demonstrated. This work reveals the great potential of the ReSe2 Schottky photodetector with geometry-asymmetric contacts for high-performance, self-powered, and polarization-sensitive photodetection.
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Affiliation(s)
- Chaoyang Liu
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, 528225 Foshan, P. R. China
| | - Tao Zheng
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, 528225 Foshan, P. R. China
| | - Kaixiang Shu
- Institut de Minéralogie, de Physique des Matériaux et de Cosmochimie, Sorbonne Université, 75005 Paris, France
| | - Sheng Shu
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, 528225 Foshan, P. R. China
| | - Zhibin Lan
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, 528225 Foshan, P. R. China
| | - Mengmeng Yang
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, 528225 Foshan, P. R. China
| | - Zhaoqiang Zheng
- School of Materials and Energy, Guangdong University of Technology, 510006 Guangzhou, P. R. China
| | - Nengjie Huo
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, 528225 Foshan, P. R. China
| | - Wei Gao
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, Faculty of Engineering, South China Normal University, 528225 Foshan, P. R. China
| | - Jingbo Li
- College of Optical Science and Engineering, Zhejiang University, 310027 Hangzhou, P. R. China
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