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Liu Q, Liu L, Xing G, Zhu L. Asymmetric magnetization switching and programmable complete Boolean logic enabled by long-range intralayer Dzyaloshinskii-Moriya interaction. Nat Commun 2024; 15:2978. [PMID: 38582790 PMCID: PMC10998899 DOI: 10.1038/s41467-024-47375-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/01/2023] [Accepted: 03/27/2024] [Indexed: 04/08/2024] Open
Abstract
After decades of efforts, some fundamental physics for electrical switching of magnetization is still missing. Here, we report the discovery of the long-range intralayer Dzyaloshinskii-Moriya interaction (DMI) effect, which is the chiral coupling of orthogonal magnetic domains within the same magnetic layer via the mediation of an adjacent heavy metal layer. The effective magnetic field of the long-range intralayer DMI on the perpendicular magnetization is out-of-plane and varies with the interfacial DMI constant, the applied in-plane magnetic fields, and the magnetic anisotropy distribution. Striking consequences of the effect include asymmetric current/field switching of perpendicular magnetization, hysteresis loop shift of perpendicular magnetization in the absence of in-plane direct current, and sharp in-plane magnetic field switching of perpendicular magnetization. Utilizing the intralayer DMI, we demonstrate programable, complete Boolean logic operations within a single spin-orbit torque device. These results will stimulate investigation of the long-range intralayer DMI effect in a variety of spintronic devices.
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Affiliation(s)
- Qianbiao Liu
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Long Liu
- Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China
- School of Integrated Circuits, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Guozhong Xing
- Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China
- School of Integrated Circuits, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Lijun Zhu
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, China.
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Zou J, Bosco S, Thingstad E, Klinovaja J, Loss D. Dissipative Spin-Wave Diode and Nonreciprocal Magnonic Amplifier. PHYSICAL REVIEW LETTERS 2024; 132:036701. [PMID: 38307041 DOI: 10.1103/physrevlett.132.036701] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/28/2023] [Accepted: 12/01/2023] [Indexed: 02/04/2024]
Abstract
We propose an experimentally feasible dissipative spin-wave diode comprising two magnetic layers coupled via a nonmagnetic spacer. We theoretically demonstrate that the spacer mediates not only coherent interactions but also dissipative coupling. Interestingly, an appropriately engineered dissipation engenders a nonreciprocal device response, facilitating the realization of a spin-wave diode. This diode permits wave propagation in one direction alone, given that the coherent Dzyaloshinskii-Moriya (DM) interaction is balanced with the dissipative coupling. The polarity of the diode is determined by the sign of the DM interaction. Furthermore, we show that when the magnetic layers undergo incoherent pumping, the device operates as a unidirectional spin-wave amplifier. The amplifier gain is augmented by cascading multiple magnetic bilayers. By extending our model to a one-dimensional ring structure, we establish a connection between the physics of spin-wave amplification and non-Hermitian topology. Our proposal opens up a new avenue for harnessing inherent dissipation in spintronic applications.
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Affiliation(s)
- Ji Zou
- Department of Physics, University of Basel, Klingelbergstrasse 82, 4056 Basel, Switzerland
| | - Stefano Bosco
- Department of Physics, University of Basel, Klingelbergstrasse 82, 4056 Basel, Switzerland
| | - Even Thingstad
- Department of Physics, University of Basel, Klingelbergstrasse 82, 4056 Basel, Switzerland
| | - Jelena Klinovaja
- Department of Physics, University of Basel, Klingelbergstrasse 82, 4056 Basel, Switzerland
| | - Daniel Loss
- Department of Physics, University of Basel, Klingelbergstrasse 82, 4056 Basel, Switzerland
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Huang YH, Han JH, Liao WB, Hu CY, Liu YT, Pai CF. Tailoring Interlayer Chiral Exchange by Azimuthal Symmetry Engineering. NANO LETTERS 2024; 24:649-656. [PMID: 38165119 DOI: 10.1021/acs.nanolett.3c03829] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/03/2024]
Abstract
Recent theoretical and experimental studies of the interlayer Dzyaloshinskii-Moriya interaction (DMI) have sparked great interest in its implementation into practical magnetic random-access memory (MRAM) devices, due to its capability to mediate long-range chiral spin textures. So far, experimental reports focused on the observation of interlayer DMI, leaving the development of strategies to control interlayer DMI's magnitude unaddressed. Here, we introduce an azimuthal symmetry engineering protocol capable of additive/subtractive tuning of interlayer DMI through the control of wedge deposition of separate layers and demonstrate its capability to mediate field-free spin-orbit torque (SOT) magnetization switching in both orthogonally magnetized and synthetic antiferromagnetically coupled systems. Furthermore, we showcase that the spatial inhomogeneity brought about by wedge deposition can be suppressed by specific azimuthal engineering design, ideal for practical implementation. Our findings provide guidelines for effective manipulations of interlayer DMI strength, beneficial for the future design of SOT-MRAM or other spintronic devices utilizing interlayer DMI.
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Affiliation(s)
- Yu-Hao Huang
- Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan
| | - Jui-Hsu Han
- Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan
| | - Wei-Bang Liao
- Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan
| | - Chen-Yu Hu
- Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan
| | - Yan-Ting Liu
- Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan
| | - Chi-Feng Pai
- Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan
- Center of Atomic Initiative for New Materials, National Taiwan University, Taipei 10617, Taiwan
- Center for Quantum Science and Engineering, National Taiwan University, Taipei 10617, Taiwan
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