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Dong M, Lv A, Zou X, Gan N, Peng C, Ding M, Wang X, Zhou Z, Chen H, Ma H, Gu L, An Z, Huang W. Polymorphism-Dependent Organic Room Temperature Phosphorescent Scintillation for X-Ray Imaging. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2310663. [PMID: 38267010 DOI: 10.1002/adma.202310663] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/13/2023] [Revised: 12/22/2023] [Indexed: 01/26/2024]
Abstract
Organic phosphorescent scintillating materials have shown great potential for applications in radiography and radiation detection due to their efficient utilization of excitons. However, revealing the relationship between molecule stacking and the phosphorescent radioluminescence of scintillators is still challenging. This study reports on two phenothiazine derivatives with polymorphism-dependent phosphorescence radioluminescence. The experiments reveal that molecule stacking significantly affects the non-radiation decay of the triplet excitons of scintillators, which further determines the phosphorescence scintillation performance under X-ray irradiation. These phosphorescent scintillators exhibit high radio stability and have a low detection limit of 278 nGys-1. Additionally, the potential application of these scintillators in X-ray radiography, based on their X-ray excited radioluminescence properties, is demonstrated. These findings provide a guideline for obtaining high-performance phosphorescent scintillating materials by shedding light on the effect of crystal packing on the radioluminescence of organic molecules.
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Affiliation(s)
- Mengyang Dong
- Frontiers Science Center for Flexible Electronics, MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University (NPU), Xi'an, 710072, P. R. China
| | - Anqi Lv
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), Nanjing, 211816, P. R. China
| | - Xin Zou
- Frontiers Science Center for Flexible Electronics, MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University (NPU), Xi'an, 710072, P. R. China
| | - Nan Gan
- Frontiers Science Center for Flexible Electronics, MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University (NPU), Xi'an, 710072, P. R. China
| | - Chenxi Peng
- Frontiers Science Center for Flexible Electronics, MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University (NPU), Xi'an, 710072, P. R. China
| | - Meijuan Ding
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), Nanjing, 211816, P. R. China
| | - Xiao Wang
- Frontiers Science Center for Flexible Electronics, MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University (NPU), Xi'an, 710072, P. R. China
| | - Zixing Zhou
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), Nanjing, 211816, P. R. China
| | - Huan Chen
- Frontiers Science Center for Flexible Electronics, MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University (NPU), Xi'an, 710072, P. R. China
| | - Huili Ma
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), Nanjing, 211816, P. R. China
| | - Long Gu
- Frontiers Science Center for Flexible Electronics, MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University (NPU), Xi'an, 710072, P. R. China
- Research and Development Institute of Northwestern Polytechnical University in Shenzhen, Shenzhen, 518057, P. R. China
| | - Zhongfu An
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), Nanjing, 211816, P. R. China
| | - Wei Huang
- Frontiers Science Center for Flexible Electronics, MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University (NPU), Xi'an, 710072, P. R. China
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), Nanjing, 211816, P. R. China
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Liu H, Guo L, Cui Z, Zeng G, Lu L, Zhu X, Peng S, Yue Y, Deng M, Qiu J, Xu X, Zhao F, Yu X, Wang T. Enhanced Storage Capacity via Anion Substitution for Advanced Delayed X-ray Detection. NANO LETTERS 2024; 24:3282-3289. [PMID: 38421230 DOI: 10.1021/acs.nanolett.4c00465] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/02/2024]
Abstract
X-ray radiation information storage, characterized by its ability to detect radiation with delayed readings, shows great promise in enabling reliable and readily accessible X-ray imaging and dosimetry in situations where conventional detectors may not be feasible. However, the lack of specific strategies to enhance the memory capability dramatically hampers its further development. Here, we present an effective anion substitution strategy to enhance the storage capability of NaLuF4:Tb3+ nanocrystals attributed to the increased concentration of trapping centers under X-ray irradiation. The stored radiation information can be read out as optical brightness via thermal, 980 nm laser, or mechanical stimulation, avoiding real-time measurement under ionizing radiation. Moreover, the radiation information can be maintained for more than 13 days, and the imaging resolution reaches 14.3 lp mm-1. These results demonstrate that anion substitution methods can effectively achieve high storage capability and broaden the application scope of X-ray information storage.
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Affiliation(s)
| | - Longchao Guo
- School of Mechanical Engineering, Institute for Advanced Materials, Deformation and Damage from Multi-Scale, Chengdu University, Chengdu 610106, China
| | - Zhenzhen Cui
- Faculty of Materials Science and Engineering, Key Laboratory of Advanced Materials of Yunnan Province, Kunming University of Science and Technology, Kunming 650093, China
| | | | - Lan Lu
- Faculty of Materials Science and Engineering, Key Laboratory of Advanced Materials of Yunnan Province, Kunming University of Science and Technology, Kunming 650093, China
| | | | - Songcheng Peng
- Faculty of Materials Science and Engineering, Key Laboratory of Advanced Materials of Yunnan Province, Kunming University of Science and Technology, Kunming 650093, China
| | - Yang Yue
- School of Mechanical Engineering, Institute for Advanced Materials, Deformation and Damage from Multi-Scale, Chengdu University, Chengdu 610106, China
| | - Mao Deng
- School of Mechanical Engineering, Institute for Advanced Materials, Deformation and Damage from Multi-Scale, Chengdu University, Chengdu 610106, China
| | - Jianbei Qiu
- Faculty of Materials Science and Engineering, Key Laboratory of Advanced Materials of Yunnan Province, Kunming University of Science and Technology, Kunming 650093, China
| | - Xuhui Xu
- Faculty of Materials Science and Engineering, Key Laboratory of Advanced Materials of Yunnan Province, Kunming University of Science and Technology, Kunming 650093, China
| | - Feng Zhao
- School of Mechanical Engineering, Institute for Advanced Materials, Deformation and Damage from Multi-Scale, Chengdu University, Chengdu 610106, China
| | - Xue Yu
- School of Mechanical Engineering, Institute for Advanced Materials, Deformation and Damage from Multi-Scale, Chengdu University, Chengdu 610106, China
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