1
|
Mikheev E, Rosen IT, Goldhaber-Gordon D. Quantized critical supercurrent in SrTiO 3-based quantum point contacts. SCIENCE ADVANCES 2021; 7:eabi6520. [PMID: 34597141 PMCID: PMC10938545 DOI: 10.1126/sciadv.abi6520] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/05/2021] [Accepted: 08/11/2021] [Indexed: 06/13/2023]
Abstract
Superconductivity in SrTiO3 occurs at remarkably low carrier densities and therefore, unlike conventional superconductors, can be controlled by electrostatic gates. Here, we demonstrate nanoscale weak links connecting superconducting leads, all within a single material, SrTiO3. Ionic liquid gating accumulates carriers in the leads, and local electrostatic gates are tuned to open the weak link. These devices behave as superconducting quantum point contacts with a quantized critical supercurrent. This is a milestone toward establishing SrTiO3 as a single-material platform for mesoscopic superconducting transport experiments that also intrinsically contains the necessary ingredients to engineer topological superconductivity.
Collapse
Affiliation(s)
- Evgeny Mikheev
- Department of Physics, Stanford University, Stanford, CA 94305, USA
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA 94025, USA
| | - Ilan T. Rosen
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA 94025, USA
- Department of Applied Physics, Stanford University, Stanford, CA 94305, USA
| | - David Goldhaber-Gordon
- Department of Physics, Stanford University, Stanford, CA 94305, USA
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA 94025, USA
| |
Collapse
|
2
|
Non-universal current flow near the metal-insulator transition in an oxide interface. Nat Commun 2021; 12:3311. [PMID: 34083533 PMCID: PMC8175561 DOI: 10.1038/s41467-021-23393-5] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/27/2021] [Accepted: 04/21/2021] [Indexed: 11/12/2022] Open
Abstract
In systems near phase transitions, macroscopic properties often follow algebraic scaling laws, determined by the dimensionality and the underlying symmetries of the system. The emergence of such universal scaling implies that microscopic details are irrelevant. Here, we locally investigate the scaling properties of the metal-insulator transition at the LaAlO3/SrTiO3 interface. We show that, by changing the dimensionality and the symmetries of the electronic system, coupling between structural and electronic properties prevents the universal behavior near the transition. By imaging the current flow in the system, we reveal that structural domain boundaries modify the filamentary flow close to the transition point, preventing a fractal with the expected universal dimension from forming. Macroscopic properties usually follow algebraic scaling laws near phase transitions. Here, the authors investigate the scaling properties of the metal‐insulator transition at the LaAlO3/SrTiO3 interface, finding that coupling between structural and electronic properties prevents the universal behavior.
Collapse
|
3
|
Singh G, Lesne E, Winkler D, Claeson T, Bauch T, Lombardi F, Caviglia AD, Kalaboukhov A. Nanopatterning of Weak Links in Superconducting Oxide Interfaces. NANOMATERIALS (BASEL, SWITZERLAND) 2021; 11:398. [PMID: 33557305 PMCID: PMC7914727 DOI: 10.3390/nano11020398] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/30/2020] [Revised: 01/22/2021] [Accepted: 01/28/2021] [Indexed: 11/16/2022]
Abstract
The interface between two wide band-gap insulators, LaAlO3 and SrTiO3 (LAO/STO), hosts a quasi-two-dimensional electron gas (q2DEG), two-dimensional superconductivity, ferromagnetism, and giant Rashba spin-orbit coupling. The co-existence of two-dimensional superconductivity with gate-tunable spin-orbit coupling and multiband occupation is of particular interest for the realization of unconventional superconducting pairing. To investigate the symmetry of the superconducting order parameter, phase sensitive measurements of the Josephson effect are required. We describe an approach for the fabrication of artificial superconducting weak links at the LAO/STO interface using direct high-resolution electron beam lithography and low-energy argon ion beam irradiation. The method does not require lift-off steps or sacrificial layers. Therefore, resolution is only limited by the electron beam lithography and pattern transfer. We have realized superconducting weak links with a barrier thickness of 30-100 nm. The barrier transparency of the weak links can be controlled by the irradiation dose and further tuned by a gate voltage. Our results open up new possibilities for the realization of quantum devices in oxide interfaces.
Collapse
Affiliation(s)
- Gyanendra Singh
- Department of Microtechnology and Nanoscience—MC2, Chalmers University of Technology, SE 412 96 Gothenburg, Sweden; (G.S.); (D.W.); (T.C.); (T.B.); (F.L.)
| | - Edouard Lesne
- Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands; (E.L.); (A.D.C.)
| | - Dag Winkler
- Department of Microtechnology and Nanoscience—MC2, Chalmers University of Technology, SE 412 96 Gothenburg, Sweden; (G.S.); (D.W.); (T.C.); (T.B.); (F.L.)
| | - Tord Claeson
- Department of Microtechnology and Nanoscience—MC2, Chalmers University of Technology, SE 412 96 Gothenburg, Sweden; (G.S.); (D.W.); (T.C.); (T.B.); (F.L.)
| | - Thilo Bauch
- Department of Microtechnology and Nanoscience—MC2, Chalmers University of Technology, SE 412 96 Gothenburg, Sweden; (G.S.); (D.W.); (T.C.); (T.B.); (F.L.)
| | - Floriana Lombardi
- Department of Microtechnology and Nanoscience—MC2, Chalmers University of Technology, SE 412 96 Gothenburg, Sweden; (G.S.); (D.W.); (T.C.); (T.B.); (F.L.)
| | - Andrea D. Caviglia
- Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands; (E.L.); (A.D.C.)
| | - Alexei Kalaboukhov
- Department of Microtechnology and Nanoscience—MC2, Chalmers University of Technology, SE 412 96 Gothenburg, Sweden; (G.S.); (D.W.); (T.C.); (T.B.); (F.L.)
| |
Collapse
|
4
|
Thierschmann H, Mulazimoglu E, Manca N, Goswami S, Klapwijk TM, Caviglia AD. Transport regimes of a split gate superconducting quantum point contact in the two-dimensional LaAlO 3/SrTiO 3 superfluid. Nat Commun 2018; 9:2276. [PMID: 29892080 PMCID: PMC5995834 DOI: 10.1038/s41467-018-04657-z] [Citation(s) in RCA: 16] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/01/2017] [Accepted: 05/14/2018] [Indexed: 11/08/2022] Open
Abstract
One of the hallmark experiments of quantum transport is the observation of the quantized resistance in a point contact in GaAs/AlGaAs heterostructures. Being formed with split gate technology, these structures represent in an ideal manner equilibrium reservoirs which are connected only through a few electron mode channel. It has been a long standing goal to achieve similar experimental conditions also in superconductors. Here we demonstrate the formation of a superconducting quantum point contact (SQPC) with split gate technology in a two-dimensional superconductor, utilizing the unique gate tunability of the superfluid at the LaAlO3/SrTiO3 interface. When the constriction is tuned through the action of metallic split gates we identify three regimes of transport: First, SQPC for which the supercurrent is carried only by a few quantum transport channels. Second, superconducting island strongly coupled to the equilibrium reservoirs. Third, charge island with a discrete spectrum weakly coupled to the reservoirs.
Collapse
Affiliation(s)
- Holger Thierschmann
- Kavli Institute of Nanoscience, Faculty of Applied Sciences, Delft University of Technology, Lorentzweg 1, 2628 CJ, Delft, The Netherlands.
| | - Emre Mulazimoglu
- Kavli Institute of Nanoscience, Faculty of Applied Sciences, Delft University of Technology, Lorentzweg 1, 2628 CJ, Delft, The Netherlands
| | - Nicola Manca
- Kavli Institute of Nanoscience, Faculty of Applied Sciences, Delft University of Technology, Lorentzweg 1, 2628 CJ, Delft, The Netherlands
| | - Srijit Goswami
- Kavli Institute of Nanoscience, Faculty of Applied Sciences, Delft University of Technology, Lorentzweg 1, 2628 CJ, Delft, The Netherlands
- QuTech, Delft University of Technology, Lorentzweg 1, 2628 CJ, Delft, The Netherlands
| | - Teun M Klapwijk
- Kavli Institute of Nanoscience, Faculty of Applied Sciences, Delft University of Technology, Lorentzweg 1, 2628 CJ, Delft, The Netherlands
- Physics Department, Moscow State University of Education, Moscow, 119991, Russia
| | - Andrea D Caviglia
- Kavli Institute of Nanoscience, Faculty of Applied Sciences, Delft University of Technology, Lorentzweg 1, 2628 CJ, Delft, The Netherlands.
| |
Collapse
|
5
|
Frenkel Y, Haham N, Shperber Y, Bell C, Xie Y, Chen Z, Hikita Y, Hwang HY, Salje EKH, Kalisky B. Imaging and tuning polarity at SrTiO 3 domain walls. NATURE MATERIALS 2017; 16:1203-1208. [PMID: 28920939 DOI: 10.1038/nmat4966] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/20/2016] [Accepted: 07/13/2017] [Indexed: 06/07/2023]
Abstract
Electrostatic fields tune the ground state of interfaces between complex oxide materials. Electronic properties, such as conductivity and superconductivity, can be tuned and then used to create and control circuit elements and gate-defined devices. Here we show that naturally occurring twin boundaries, with properties that are different from their surrounding bulk, can tune the LaAlO3/SrTiO3 interface 2DEG at the nanoscale. In particular, SrTiO3 domain boundaries have the unusual distinction of remaining highly mobile down to low temperatures, and were recently suggested to be polar. Here we apply localized pressure to an individual SrTiO3 twin boundary and detect a change in LaAlO3/SrTiO3 interface current distribution. Our data directly confirm the existence of polarity at the twin boundaries, and demonstrate that they can serve as effective tunable gates. As the location of SrTiO3 domain walls can be controlled using external field stimuli, our findings suggest a novel approach to manipulate SrTiO3-based devices on the nanoscale.
Collapse
Affiliation(s)
- Yiftach Frenkel
- Department of Physics and Institute of Nanotechnology and Advanced Materials, Bar-Ilan University, Ramat-Gan 5290002, Israel
| | - Noam Haham
- Department of Physics and Institute of Nanotechnology and Advanced Materials, Bar-Ilan University, Ramat-Gan 5290002, Israel
| | - Yishai Shperber
- Department of Physics and Institute of Nanotechnology and Advanced Materials, Bar-Ilan University, Ramat-Gan 5290002, Israel
| | - Christopher Bell
- H. H. Wills Physics Laboratory, University of Bristol, Tyndall Avenue, Bristol BS8 1TL, UK
| | - Yanwu Xie
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, USA
- Department of Physics, Zhejiang University, Hangzhou 310027, China
- Department of Applied Physics, Geballe Laboratory for Advanced Materials, Stanford University, 476 Lomita Mall, Stanford University, Stanford, California 94305, USA
| | - Zhuoyu Chen
- Department of Applied Physics, Geballe Laboratory for Advanced Materials, Stanford University, 476 Lomita Mall, Stanford University, Stanford, California 94305, USA
| | - Yasuyuki Hikita
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, USA
| | - Harold Y Hwang
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, USA
- Department of Applied Physics, Geballe Laboratory for Advanced Materials, Stanford University, 476 Lomita Mall, Stanford University, Stanford, California 94305, USA
| | - Ekhard K H Salje
- Department of Earth Sciences, University of Cambridge, Downing Street, Cambridge CB2 3EQ, UK
- State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, China
| | - Beena Kalisky
- Department of Physics and Institute of Nanotechnology and Advanced Materials, Bar-Ilan University, Ramat-Gan 5290002, Israel
| |
Collapse
|
6
|
Smink AEM, de Boer JC, Stehno MP, Brinkman A, van der Wiel WG, Hilgenkamp H. Gate-Tunable Band Structure of the LaAlO_{3}-SrTiO_{3} Interface. PHYSICAL REVIEW LETTERS 2017; 118:106401. [PMID: 28339281 DOI: 10.1103/physrevlett.118.106401] [Citation(s) in RCA: 17] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/10/2016] [Indexed: 06/06/2023]
Abstract
The two-dimensional electron system at the interface between LaAlO_{3} and SrTiO_{3} has several unique properties that can be tuned by an externally applied gate voltage. In this work, we show that this gate tunability extends to the effective band structure of the system. We combine a magnetotransport study on top-gated Hall bars with self-consistent Schrödinger-Poisson calculations and observe a Lifshitz transition at a density of 2.9×10^{13}cm^{-2}. Above the transition, the carrier density of one of the conducting bands decreases with increasing gate voltage. This surprising decrease is accurately reproduced in the calculations if electronic correlations are included. These results provide a clear, intuitive picture of the physics governing the electronic structure at complex-oxide interfaces.
Collapse
Affiliation(s)
- A E M Smink
- MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede, The Netherlands
| | - J C de Boer
- MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede, The Netherlands
| | - M P Stehno
- MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede, The Netherlands
| | - A Brinkman
- MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede, The Netherlands
| | - W G van der Wiel
- MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede, The Netherlands
| | - H Hilgenkamp
- MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede, The Netherlands
| |
Collapse
|
7
|
Monteiro AMRVL, Groenendijk DJ, Manca N, Mulazimoglu E, Goswami S, Blanter Y, Vandersypen LMK, Caviglia AD. Side Gate Tunable Josephson Junctions at the LaAlO 3/SrTiO 3 Interface. NANO LETTERS 2017; 17:715-720. [PMID: 28071920 PMCID: PMC5343548 DOI: 10.1021/acs.nanolett.6b03820] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/12/2016] [Revised: 01/07/2017] [Indexed: 05/22/2023]
Abstract
Novel physical phenomena arising at the interface of complex oxide heterostructures offer exciting opportunities for the development of future electronic devices. Using the prototypical LaAlO3/SrTiO3 interface as a model system, we employ a single-step lithographic process to realize gate-tunable Josephson junctions through a combination of lateral confinement and local side gating. The action of the side gates is found to be comparable to that of a local back gate, constituting a robust and efficient way to control the properties of the interface at the nanoscale. We demonstrate that the side gates enable reliable tuning of both the normal-state resistance and the critical (Josephson) current of the constrictions. The conductance and Josephson current show mesoscopic fluctuations as a function of the applied side gate voltage, and the analysis of their amplitude enables the extraction of the phase coherence and thermal lengths. Finally, we realize a superconducting quantum interference device in which the critical currents of each of the constriction-type Josephson junctions can be controlled independently via the side gates.
Collapse
|
8
|
Jin MJ, Moon SY, Park J, Modepalli V, Jo J, Kim SI, Koo HC, Min BC, Lee HW, Baek SH, Yoo JW. Nonlocal Spin Diffusion Driven by Giant Spin Hall Effect at Oxide Heterointerfaces. NANO LETTERS 2017; 17:36-43. [PMID: 27935722 DOI: 10.1021/acs.nanolett.6b03050] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
A two-dimensional electron gas emerged at a LaAlO3/SrTiO3 interface is an ideal system for "spin-orbitronics" as the structure itself strongly couple the spin and orbital degree of freedom through the Rashba spin-orbit interaction. One of core experiments toward this direction is the nonlocal spin transport measurement, which has remained elusive due to the low spin injection efficiency to this system. Here we bypass the problem by generating a spin current not through the spin injection from outside but instead through the inherent spin Hall effect and demonstrate the nonlocal spin transport. The analysis on the nonlocal spin voltage, confirmed by the signature of a Larmor spin precession and its length dependence, displays that both D'yakonov-Perel' and Elliott-Yafet mechanisms involve in the spin relaxation at low temperature. Our results show that the oxide heterointerface is highly efficient in spin-charge conversion with exceptionally strong spin Hall coefficient γ ∼ 0.15 ± 0.05 and could be an outstanding platform for the study of coupled charge and spin transport phenomena and their electronic applications.
Collapse
Affiliation(s)
- Mi-Jin Jin
- School of Materials Science and Engineering-Low dimensional Carbon Materials Center, Ulsan National Institute of Science and Technology , Ulsan, 44919, Korea
| | - Seon Young Moon
- Center for Electronic Materials, Korea Institute of Science and Technology , Seoul 02792, Korea
| | - Jungmin Park
- School of Materials Science and Engineering-Low dimensional Carbon Materials Center, Ulsan National Institute of Science and Technology , Ulsan, 44919, Korea
| | - Vijayakumar Modepalli
- School of Materials Science and Engineering-Low dimensional Carbon Materials Center, Ulsan National Institute of Science and Technology , Ulsan, 44919, Korea
| | - Junhyeon Jo
- School of Materials Science and Engineering-Low dimensional Carbon Materials Center, Ulsan National Institute of Science and Technology , Ulsan, 44919, Korea
| | - Shin-Ik Kim
- Center for Electronic Materials, Korea Institute of Science and Technology , Seoul 02792, Korea
- Department of Nanomaterials Science and Technology, Korea University of Science and Technology , Daejeon, 34113, Korea
| | - Hyun Cheol Koo
- Center for Spintronics, Korea Institute of Science and Technology , Seoul 02792, Korea
- KU-KIST Graduate School of Converging Science and Technology, Korea University , Seoul, 02481, Korea
| | - Byoung-Chul Min
- Department of Nanomaterials Science and Technology, Korea University of Science and Technology , Daejeon, 34113, Korea
- Center for Spintronics, Korea Institute of Science and Technology , Seoul 02792, Korea
| | - Hyun-Woo Lee
- PCTP and Department of Physics, Pohang University of Science and Technology , Pohang 37673, Korea
| | - Seung-Hyub Baek
- Center for Electronic Materials, Korea Institute of Science and Technology , Seoul 02792, Korea
- Department of Nanomaterials Science and Technology, Korea University of Science and Technology , Daejeon, 34113, Korea
| | - Jung-Woo Yoo
- School of Materials Science and Engineering-Low dimensional Carbon Materials Center, Ulsan National Institute of Science and Technology , Ulsan, 44919, Korea
| |
Collapse
|
9
|
Goswami S, Mulazimoglu E, Monteiro AMRVL, Wölbing R, Koelle D, Kleiner R, Blanter YM, Vandersypen LMK, Caviglia AD. Quantum interference in an interfacial superconductor. NATURE NANOTECHNOLOGY 2016; 11:861-865. [PMID: 27428278 DOI: 10.1038/nnano.2016.112] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/11/2015] [Accepted: 05/23/2016] [Indexed: 06/06/2023]
Abstract
The two-dimensional superconductor that forms at the interface between the complex oxides lanthanum aluminate (LAO) and strontium titanate (STO) has several intriguing properties that set it apart from conventional superconductors. Most notably, an electric field can be used to tune its critical temperature (Tc; ref. 7), revealing a dome-shaped phase diagram reminiscent of high-Tc superconductors. So far, experiments with oxide interfaces have measured quantities that probe only the magnitude of the superconducting order parameter and are not sensitive to its phase. Here, we perform phase-sensitive measurements by realizing the first superconducting quantum interference devices (SQUIDs) at the LAO/STO interface. Furthermore, we develop a new paradigm for the creation of superconducting circuit elements, where local gates enable the in situ creation and control of Josephson junctions. These gate-defined SQUIDs are unique in that the entire device is made from a single superconductor with purely electrostatic interfaces between the superconducting reservoir and the weak link. We complement our experiments with numerical simulations and show that the low superfluid density of this interfacial superconductor results in a large, gate-controllable kinetic inductance of the SQUID. Our observation of robust quantum interference opens up a new pathway to understanding the nature of superconductivity at oxide interfaces.
Collapse
Affiliation(s)
- Srijit Goswami
- Kavli Institute of Nanoscience, Delft University of Technology, PO Box 5046, 2600 GA Delft, The Netherlands
| | - Emre Mulazimoglu
- Kavli Institute of Nanoscience, Delft University of Technology, PO Box 5046, 2600 GA Delft, The Netherlands
| | - Ana M R V L Monteiro
- Kavli Institute of Nanoscience, Delft University of Technology, PO Box 5046, 2600 GA Delft, The Netherlands
| | - Roman Wölbing
- Physikalisches Institut and CQ Center for Quantum Science in LISA+, Eberhard Karls Universität Tübingen, Auf der Morgenstelle 14, D-72076 Tübingen, Germany
| | - Dieter Koelle
- Physikalisches Institut and CQ Center for Quantum Science in LISA+, Eberhard Karls Universität Tübingen, Auf der Morgenstelle 14, D-72076 Tübingen, Germany
| | - Reinhold Kleiner
- Physikalisches Institut and CQ Center for Quantum Science in LISA+, Eberhard Karls Universität Tübingen, Auf der Morgenstelle 14, D-72076 Tübingen, Germany
| | - Ya M Blanter
- Kavli Institute of Nanoscience, Delft University of Technology, PO Box 5046, 2600 GA Delft, The Netherlands
| | - Lieven M K Vandersypen
- Kavli Institute of Nanoscience, Delft University of Technology, PO Box 5046, 2600 GA Delft, The Netherlands
| | - Andrea D Caviglia
- Kavli Institute of Nanoscience, Delft University of Technology, PO Box 5046, 2600 GA Delft, The Netherlands
| |
Collapse
|
10
|
Mannhart J, Boschker H, Kopp T, Valentí R. Artificial atoms based on correlated materials. REPORTS ON PROGRESS IN PHYSICS. PHYSICAL SOCIETY (GREAT BRITAIN) 2016; 79:084508. [PMID: 27427430 DOI: 10.1088/0034-4885/79/8/084508] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Low-dimensional electron systems fabricated from quantum matter have in recent years become available and are being explored with great intensity. This article gives an overview of the fundamental properties of such systems and summarizes the state of the field. We furthermore present and consider the concept of artificial atoms fabricated from quantum materials, anticipating remarkable scientific advances and possibly important applications of this new field of research. The surprising properties of these artificial atoms and of molecules or even of solids assembled from them are presented and discussed.
Collapse
Affiliation(s)
- J Mannhart
- Max Planck Institute for Solid State Research, 70569 Stuttgart, Germany
| | | | | | | |
Collapse
|
11
|
Chang YJ, Phark SH. Direct Nanoscale Analysis of Temperature-Resolved Growth Behaviors of Ultrathin Perovskites on SrTiO3. ACS NANO 2016; 10:5383-90. [PMID: 27163291 DOI: 10.1021/acsnano.6b01592] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/27/2023]
Abstract
Revealing growth mechanism of a thin film and properties of its film-substrate interface necessarily require microscopic investigations on the initial growth stages in temperature- and thickness-resolved manners. Here we applied in situ scanning tunneling microscopy and atomic force microscopy to investigate the growth dynamics in homo- (SrTiO3) and hetero- (SrRuO3) epitaxies on SrTiO3(001). A comparison of temperature-dependent surface structures of SrRuO3 and SrTiO3 films suggests that the peculiar growth mode switching from a "layer-by-layer" to "step-flow" type in a SrRuO3 films arises from a reduction of surface migration barrier, caused by the change in the chemical configuration of the interface between the topmost and underlying layers. Island densities in perovskite epitaxies exhibited a clear linear inverse-temperature dependence. A prototypical study on island nucleation stage of SrTiO3 homoepitaxy revealed that classical diffusion model is valid for the perovskite growths.
Collapse
Affiliation(s)
- Young Jun Chang
- Department of Physics, University of Seoul , Seoul 02504, Korea
| | - Soo-Hyon Phark
- Center for Correlated Electron Systems, Institute for Basic Science , Seoul 08826, Korea
- Department of Physics and Astronomy, Seoul National University , Seoul 08826, Korea
| |
Collapse
|
12
|
Rödel TC, Fortuna F, Sengupta S, Frantzeskakis E, Le Fèvre P, Bertran F, Mercey B, Matzen S, Agnus G, Maroutian T, Lecoeur P, Santander-Syro AF. Universal Fabrication of 2D Electron Systems in Functional Oxides. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2016; 28:1976-1980. [PMID: 26753522 DOI: 10.1002/adma.201505021] [Citation(s) in RCA: 30] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/12/2015] [Revised: 11/19/2015] [Indexed: 06/05/2023]
Abstract
2D electron systems (2DESs) in functional oxides are promising for applications, but their fabrication and use, essentially limited to SrTiO3 -based heterostructures, are hampered by the need for growing complex oxide overlayers thicker than 2 nm using evolved techniques. It is demonstrated that thermal deposition of a monolayer of an elementary reducing agent suffices to create 2DESs in numerous oxides.
Collapse
Affiliation(s)
- Tobias Chris Rödel
- CSNSM, Univ. Paris-Sud, CNRS/IN2P3, Université Paris-Saclay, 91405, Orsay, France
- Synchrotron SOLEIL, L'Orme des Merisiers, Saint-Aubin-BP48, 91192, Gif-sur-Yvette, France
| | - Franck Fortuna
- CSNSM, Univ. Paris-Sud, CNRS/IN2P3, Université Paris-Saclay, 91405, Orsay, France
| | - Shamashis Sengupta
- Laboratoire de Physique des Solides, Univ. Paris-Sud, CNRS, Université Paris-Saclay, 91405, Orsay, France
| | | | - Patrick Le Fèvre
- Synchrotron SOLEIL, L'Orme des Merisiers, Saint-Aubin-BP48, 91192, Gif-sur-Yvette, France
| | - François Bertran
- Synchrotron SOLEIL, L'Orme des Merisiers, Saint-Aubin-BP48, 91192, Gif-sur-Yvette, France
| | - Bernard Mercey
- CRISMAT, ENSICAEN-CNRS UMR6508, 6 bd. Maréchal Juin, 14050, Caen, France
| | - Sylvia Matzen
- Institut d'Electronique Fondamentale, Univ. Paris-Sud, CNRS, Université Paris-Saclay, 91405, Orsay, France
| | - Guillaume Agnus
- Institut d'Electronique Fondamentale, Univ. Paris-Sud, CNRS, Université Paris-Saclay, 91405, Orsay, France
| | - Thomas Maroutian
- Institut d'Electronique Fondamentale, Univ. Paris-Sud, CNRS, Université Paris-Saclay, 91405, Orsay, France
| | - Philippe Lecoeur
- Institut d'Electronique Fondamentale, Univ. Paris-Sud, CNRS, Université Paris-Saclay, 91405, Orsay, France
| | | |
Collapse
|
13
|
Zhang L, Zhu L, Hu L, Li Y, Song H, Ye Z. Interfacial effect on Mn-doped TiO2 nanoparticles: from paramagnetism to ferromagnetism. RSC Adv 2016. [DOI: 10.1039/c6ra06606b] [Citation(s) in RCA: 18] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
Abstract
Interfacial defects created during phase-transformation leads to room temperature ferromagnetism of manganese-doped TiO2 nanoparticles.
Collapse
Affiliation(s)
- Le Zhang
- State Key Laboratory of Silicon Materials
- Department of Materials Science and Engineering
- Zhejiang University
- Hangzhou 310027
- People's Republic of China
| | - Liping Zhu
- State Key Laboratory of Silicon Materials
- Department of Materials Science and Engineering
- Zhejiang University
- Hangzhou 310027
- People's Republic of China
| | - Liang Hu
- State Key Laboratory of Silicon Materials
- Department of Materials Science and Engineering
- Zhejiang University
- Hangzhou 310027
- People's Republic of China
| | - Yaguang Li
- State Key Laboratory of Silicon Materials
- Department of Materials Science and Engineering
- Zhejiang University
- Hangzhou 310027
- People's Republic of China
| | - Hui Song
- State Key Laboratory of Silicon Materials
- Department of Materials Science and Engineering
- Zhejiang University
- Hangzhou 310027
- People's Republic of China
| | - Zhizhen Ye
- State Key Laboratory of Silicon Materials
- Department of Materials Science and Engineering
- Zhejiang University
- Hangzhou 310027
- People's Republic of China
| |
Collapse
|
14
|
Qiu Z, Tang D, Shu J, Chen G, Tang D. Enzyme-triggered formation of enzyme-tyramine concatamers on nanogold-functionalized dendrimer for impedimetric detection of Hg(II) with sensitivity enhancement. Biosens Bioelectron 2016; 75:108-15. [DOI: 10.1016/j.bios.2015.08.026] [Citation(s) in RCA: 59] [Impact Index Per Article: 7.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/30/2015] [Revised: 08/08/2015] [Accepted: 08/14/2015] [Indexed: 12/11/2022]
|