Graphene Ambipolar Nanoelectronics for High Noise Rejection Amplification

A first-principles study on the multiferroicity of semi-modified X2M (X = C, Si; M = F, Cl) monolayers

The research of two-dimensional multiferroic materials has attracted extensive attention in recent years. In this work, we systematically investigated the multiferroic properties of semi-fluorinated and semi-chlorinated graphene and silylene X₂M (X = C, Si; M = F, Cl) monolayers under strain using first principles calculations based on density functional theory. We find that the X₂M monolayer has a frustrated antiferromagnetic order, and a large polarization with a high reversal potential barrier. When increasing the applied biaxial tensile strain, the magnetic order remains unchanged, but the polarization flipping potential barrier of X₂M gradually decreases. When the strain increases to 35%, although the energy required to flip the fluorine and chlorine atoms is still very high in the C₂F and C₂Cl monolayers, it goes down to 312.5 meV and 260 meV in unit cells of the Si₂F and Si₂Cl monolayers, respectively. At the same time, both semi-modified silylenes exhibit metallic ferroelectricity with a band gap of at least 0.275 eV in the direction perpendicular to the plane. The results of these studies show that Si₂F and Si₂Cl monolayers may become a new generation of information storage materials with magnetoelectric multifunctional properties.

Growth of wafer-scale graphene-hexagonal boron nitride vertical heterostructures with clear interfaces for obtaining atomically thin electrical analogs

Two-dimensional (2D) integrated circuits based on graphene (Gr) heterostructures have emerged as next-generation electronic devices. However, it is still challenging to produce high-quality and large-area Gr/hexagonal boron nitride (h-BN) vertical heterostructures with clear interfaces and precise layer control. In this work, a two-step metallic alloy-assisted epitaxial growth approach has been demonstrated for producing wafer-scale vertical hexagonal boron nitride/graphene (h-BN/Gr) heterostructures with clear interfaces. The heterostructures maintain high uniformity while scaling up and thickening. The layer number of both h-BN and graphene can be independently controlled by tuning the growth process. Furthermore, conductance measurements confirm that electrical hysteresis disappears on h-BN/Gr field-effect transistors, which is attributed to the h-BN dielectric surface. Our work blazes a trail toward next-generation graphene-based analog devices.

Perylene-functionalized graphene sheets modified with β-cyclodextrin for the voltammetric discrimination of phenylalanine enantiomers

A facile approach was reported to synthesize β-cyclodextrin functionalized graphene that is bridged by 3,4,9,10-perylene tetracarboxylic acid (rGO-PTCA-CD) via a chemical route that involves the functionalization of rGO with PTCA followed by covalently cross-linking NH₂-β-CD. The as-prepared rGO-PTCA-CD was characterized by Fourier transform infrared spectroscopy, scanning electron microscopy, X-ray photoelectron spectroscopy and electrochemical methods. The working electrodes were thoroughly studied for the cyclic voltammetry by using [Fe(CN)₆]^4-/3- as redox probe and using ferrocene as an internal standard. Furthermore, rGO-PTCA-CD was successfully applied to the recognition of phenylalanine enantiomers. The host-guest inclusion interaction between rGO-PTCA-CD and the phenylalanine enantiomers was investigated by differential pulse voltammetry with Fc used as a competitor. The recognition result showed that the rGO-PTCA-CD-modified glassy carbon electrode exhibited higher chiral recognition capability for L-Phe than for D-Phe with an enantioselectivity coefficient of 2.07. The proposed modified electrode had a limit of detection of 0.08 nM and 0.2 nM (S/N = 3) for L-Phe and D-Phe, respectively, with a linear response range of 0.01 mM to 5 mM, which was ascribed to the synergy of the rGO-PTCA (e.g., its excellent electrochemical performance) and β-CD (e.g., the hydrophobic inner cavity with good molecular recognition and enrichment abilities).

High Efficient Reduction of Graphene Oxide via Nascent Hydrogen at Room Temperature

To develop a green and efficient method to synthesize graphene in relative milder conditions is prerequisite for graphene applications. A chemical reducing method has been developed to high efficiently reduce graphene oxide (GO) using Fe₂O₃ and NH₃BH₃ as catalyst and reductants, respectively. During the process, environmental and strong reductive nascent hydrogen were generated surrounding the surface of GO sheets by catalyst hydrolysis reaction of NH₃BH₃ and were used for reduction of GO. The reduction process was studied by ultraviolet absorption spectroscopy, Raman spectroscopy, and Fourier transform infrared spectrum. The structure and morphology of the reduced GO were characterized with scanning electron microscopy and transmission electron microscopy. Compared to metal (Mg/Fe/Zn/Al) particles and acid system which also use nascent hydrogen to reduce GO, this method exhibited higher reduction efficiency (43.6%). Also the reduction was carried out at room temperature condition, which is environmentally friendly. As a supercapacitor electrode, the reversible capacity of reduced graphene oxide was 113.8 F g⁻¹ at 1 A g⁻¹ and the capacitance retention still remained at 90% after 200 cycles. This approach provides a new method to reduce GO with high reduction efficiency by green reductant.