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Park DS, Rata AD, Dahm RT, Chu K, Gan Y, Maznichenko I, Ostanin S, Trier F, Baik H, Choi WS, Choi CJ, Kim YH, Rees GJ, Gíslason HP, Buczek PA, Mertig I, Ionescu MA, Ernst A, Dörr K, Muralt P, Pryds N. Controlled Electronic and Magnetic Landscape in Self-Assembled Complex Oxide Heterostructures. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2300200. [PMID: 37154173 DOI: 10.1002/adma.202300200] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/07/2023] [Revised: 05/01/2023] [Indexed: 05/10/2023]
Abstract
Complex oxide heterointerfaces contain a rich playground of novel physical properties and functionalities, which give rise to emerging technologies. Among designing and controlling the functional properties of complex oxide film heterostructures, vertically aligned nanostructure (VAN) films using a self-assembling bottom-up deposition method presents great promise in terms of structural flexibility and property tunability. Here, the bottom-up self-assembly is extended to a new approach using a mixture containing a 2Dlayer-by-layer film growth, followed by a 3D VAN film growth. In this work, the two-phase nanocomposite thin films are based on LaAlO3 :LaBO3 , grown on a lattice-mismatched SrTiO3001 (001) single crystal. The 2D-to-3D transient structural assembly is primarily controlled by the composition ratio, leading to the coexistence of multiple interfacial properties, 2D electron gas, and magnetic anisotropy. This approach provides multidimensional film heterostructures which enrich the emergent phenomena for multifunctional applications.
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Affiliation(s)
- Dae-Sung Park
- Institute of Materials, Swiss Federal Institute of Technology-EPFL, Lausanne, 1015, Switzerland
- Department of Energy Conversion and Storage, Technical University of Denmark, Kgs Lyngby, DK-2800, Denmark
- Institute of Electrical and Micro Engineering, Swiss Federal Institute of Technology-EPFL, Lausanne, 1015, Switzerland
| | - Aurora Diana Rata
- Institut für Physik, Martin-Luther-Universität Halle-Wittenberg, 06099, Halle, Germany
| | - Rasmus Tindal Dahm
- Department of Energy Conversion and Storage, Technical University of Denmark, Kgs Lyngby, DK-2800, Denmark
| | - Kanghyun Chu
- Institute of Materials, Swiss Federal Institute of Technology-EPFL, Lausanne, 1015, Switzerland
| | - Yulin Gan
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Igor Maznichenko
- Institut für Physik, Martin-Luther-Universität Halle-Wittenberg, 06099, Halle, Germany
| | - Sergey Ostanin
- Institut für Physik, Martin-Luther-Universität Halle-Wittenberg, 06099, Halle, Germany
| | - Felix Trier
- Department of Energy Conversion and Storage, Technical University of Denmark, Kgs Lyngby, DK-2800, Denmark
| | - Hionsuck Baik
- Korea Basic Science Institute, Seoul, 02841, Republic of Korea
| | - Woo Seok Choi
- Department of Physics, Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Chel-Jong Choi
- School of Semiconductor and Chemical Engineering, Chonbuk National University, Jeonju, 54596, Republic of Korea
| | - Young Heon Kim
- Graduate School of Analytical Science and Technology, Chungnam National University, Daejeon, 34134, Republic of Korea
| | - Gregory Jon Rees
- Department of Materials, University of Oxford, Oxford, OX1 3PH, UK
| | | | - Paweł Adam Buczek
- Department of Engineering and Computer Sciences, Hamburg University of Applied Sciences, 20099, Hamburg, Germany
| | - Ingrid Mertig
- Institut für Physik, Martin-Luther-Universität Halle-Wittenberg, 06099, Halle, Germany
| | - Mihai Adrian Ionescu
- Institute of Electrical and Micro Engineering, Swiss Federal Institute of Technology-EPFL, Lausanne, 1015, Switzerland
| | - Arthur Ernst
- Max-Planck-Institut für Mikrostrukturphysik, 06120, Halle, Germany
- Institute of Theoretical Physics, Johannes Kepler University, Linz, 4040, Austria
| | - Kathrin Dörr
- Institut für Physik, Martin-Luther-Universität Halle-Wittenberg, 06099, Halle, Germany
| | - Paul Muralt
- Institute of Materials, Swiss Federal Institute of Technology-EPFL, Lausanne, 1015, Switzerland
| | - Nini Pryds
- Department of Energy Conversion and Storage, Technical University of Denmark, Kgs Lyngby, DK-2800, Denmark
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Pai YY, Tylan-Tyler A, Irvin P, Levy J. Physics of SrTiO 3-based heterostructures and nanostructures: a review. REPORTS ON PROGRESS IN PHYSICS. PHYSICAL SOCIETY (GREAT BRITAIN) 2018; 81:036503. [PMID: 29424362 DOI: 10.1088/1361-6633/aa892d] [Citation(s) in RCA: 51] [Impact Index Per Article: 7.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/06/2023]
Abstract
This review provides a summary of the rich physics expressed within SrTiO3-based heterostructures and nanostructures. The intended audience is researchers who are working in the field of oxides, but also those with different backgrounds (e.g., semiconductor nanostructures). After reviewing the relevant properties of SrTiO3 itself, we will then discuss the basics of SrTiO3-based heterostructures, how they can be grown, and how devices are typically fabricated. Next, we will cover the physics of these heterostructures, including their phase diagram and coupling between the various degrees of freedom. Finally, we will review the rich landscape of quantum transport phenomena, as well as the devices that elicit them.
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Affiliation(s)
- Yun-Yi Pai
- Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, PA 15260, United States of America. Pittsburgh Quantum Institute, Pittsburgh, PA 15260, United States of America
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