Novel p-Type Conductive Semiconductor Nanocrystalline Film as the Back Electrode for High-Performance Thin Film Solar Cells

Intrinsic ion migration-induced susceptible two-dimensional phase-transition memristor with ultralow power consumption

Two-dimensional (2D) phase-transition memristors have demonstrated transformative potential for neuromorphic computing, yet challenges like high power consumption, limited endurance, and crystal damage from external ion intercalation persist. Here, we introduce a novel 2D phase-transition memristor leveraging a paradigm-shifting mechanism by exploiting the ultrafast intrinsic Cu+ ion migration within Cu2S. This approach eliminates the need for external ion insertion, significantly reducing crystal damage and enabling exceptional cycling stability with over 400 DC cycles and 500 pulse cycles. The susceptible monoclinic-tetragonal phase-transition induced by intrinsic Cu+ migration achieves an unprecedented SET power consumption of 1 μW at 100 mV, significantly lower in currently reported phase-transition memristors. To further demonstrate the potential of intrinsic ion migration-induced (IIM) memristor, we simulated an IIM memristor crossbar array for image preprocessing in gesture recognition with a high SSIM value of 0.94, showcasing its potential for scalable neuromorphic hardware. This work establishes a new paradigm in low-power, high-performance phase-transition memristors, advancing their practical application in next-generation computing.

Infrared Light-Induced Anomalous Defect-Mediated Plasmonic Hot Electron Transfer for Enhanced Photocatalytic Hydrogen Evolution

Efficient utilization of infrared (IR) light, which occupies almost half of the solar energy, is an important but challenging task in solar-to-fuel transformation. Herein, we report the discovery of CuS@ZnS core@shell nanocrystals (CSNCs) with strong localized surface plasmon resonance (LSPR) characteristics in the IR light region showing enhanced photocatalytic activity in hydrogen evolution reaction (HER). A unique "plasmon-induced defect-mediated carrier transfer" (PIDCT) at the heterointerfaces of the CSNCs divulged by time-resolved transient spectroscopy enables producing a high quantum yield of 29.2%. The CuS@ZnS CSNCs exhibit high activity and stability in H₂ evolution under near-IR light irradiation. The HER rate of CuS@ZnS CSNCs at 26.9 μmol h^-1 g^-1 is significantly higher than those of CuS NCs (0.4 μmol h^-1 g^-1) and CuS/ZnS core/satellite heterostructured NCs (15.6 μmol h^-1 g^-1). The PIDCT may provide a viable strategy for the tuning of LSPR-generated carrier kinetics through controlling the defect engineering to improve photocatalytic performance.

Tellurium-based solar cells

In this article, we discuss about various Tellurium-based solar cells. Mainly this analysis focuses on the CdTe solar cells. The latest development in this area is incorporated in great detail. Te doping in various other solar cells is also discussed in the last part of the article.

High-Performance Memristors Based on Ultrathin 2D Copper Chalcogenides

Copper chalcogenides represent a class of materials with unique crystal structures, high electrical conductivity, and earth abundance, and are recognized as promising candidates for next-generation green electronics. However, their 2D structures and the corresponding electronic properties have rarely been touched. Herein, a series of ultrathin copper chalcogenide nanosheets with thicknesses down to two unit cells are successfully synthesized, including layered Cu₂ Te, as well as nonlayered CuSe and Cu₉ S₅ , via van der Waals epitaxy, and their nonvolatile memristive behavior is investigated for the first time. Benefiting from the highly active Cu ions with low migration barriers, the memristors based on ultrathin 2D copper chalcogenide crystals exhibit relatively small switching voltage (≈0.4 V), fast switching speed, high switching uniformity, and wide operating temperature range (from 80 to 420 K), as well as stable retention and good cyclic endurance. These results demonstrate their tangible applications in future low-power, cryogenic, and high temperature harsh electronics.

2D Cu9 S5 /PtS2 /WSe2 Double Heterojunction Bipolar Transistor with High Current Gain

Bipolar junction transistor (BJT) as one important circuit element is now widely used in high-speed computation and communication for its capability of high-power signal amplification. 2D materials and their heterostructures are promising in building high-amplification and high-frequency BJTs because they can be naturally thin and highly designable in tailoring components properties. However, currently the low emitter injection efficiency results in only moderate current gain achieved in the pioneer researches, severely restraining its future development. Herein, it is shown that an elaborately designed double heterojunction bipolar transistor (DHBT) can greatly promote the injection efficiency, improving the current gain by order of magnitude. In this DHBT high-doping-density wide-bandgap 2D Cu₉ S₅ is used as emitter and narrow-bandgap PtS₂ as base. This heterostructure efficiently suppresses the reverse electron flux from base and increase the injection efficiency. Consequently, the DHBT achieves an excellent current gain (β ≈ 910). This work systematically explores the electrical behavior of 2D materials based DHBT, and provides deep insight of the architecture design for building high gain DHBT, which may promote the applications of 2Dheterojunctions in the fields of integrated circuits.

Local Cu Component Engineering to Achieve Continuous Carrier Transport for Enhanced Kesterite Solar Cells

Although the traditional Cu-poor architecture addresses many limitations for Cu₂ZnSn(S,Se)₄ solar cells, its further development still encounters a bottleneck in terms of efficiency, primarily arising from the inferior charge transport within the quasineutral region and enlarged recombination at back contact. On the contrary, the electrical benign kesterite compound with higher Cu content may compensate for these shortages, but it will degrade device performance more pronouncedly at front contact because of the Fermi level pinning and more electric shunts. Based on the electric disparities on their independent side, in this work, we propose a new status of Cu component by exploring a large grain/fine grain/large grain trilayer architecture with higher Cu content near back contact and lower Cu content near front contact. The benefits of this bottom Cu-higher strategy are that it imposes a concentration gradient to drive carrier diffusion toward front contact and decreases the valence band edge offset in the rear of the device to aid in hole extraction. Also, it maintains the Cu-poor architecture at the near surface to facilitate hole quasi-Fermi level splitting. In return, the local Cu component engineering-mediated electric advances contribute to the highest efficiency of 12.54% for kesterite solar cells using amine-thiol solution systems so far.

High performance perovskite solar cells using Cu9S5 supraparticles incorporated hole transport layers

We disclose novel photovoltaic device physics and present details of device mechanisms by investigating perovskite solar cells (PSCs) incorporating Cu₉S₅@SiO₂ supraparticles (SUPs) into Spiro-OMeTAD based hole transport layers (HTLs). High quality colloidal Cu₉S₅ nanocrystals (NCs) were prepared using a hot-injection approach. Multiple Cu₉S₅ NCs were further embedded in silica to construct a Cu₉S₅@SiO₂ SUP. Cu₉S₅@SiO₂ SUPs were blended into Spiro-OMeTAD based HTLs with different weight ratios. Theoretical and experimental results show that the very strong light scattering or reflecting properties of Cu₉S₅@SiO₂ SUPs blended in the PSC device in a proper proportion distribute to increase the light energy trapped within the device, leading to significant enhancement of light absorption in the active layer. Additionally, the incorporated Cu₉S₅@SiO₂ SUPs can also promote the electrical conductivity and hole-transport capacity of the HTL. Significantly larger conductivity and higher hole injection efficiency were demonstrated in the HTM with the optimal weight ratios of Cu₉S₅@SiO₂ SUPs. As a result, efficient Cu₉S₅ SUPs based PSC devices were obtained with average power conversion efficiency (PCE) of 18.21% at an optimal weight ratio of Cu₉S₅ SUPs. Compared with PSC solar cells without Cu₉S₅@SiO₂ SUPs (of which the average PCE is 14.38%), a remarkable enhancement over 26% in average PCE was achieved. This study provides an innovative approach to efficiently promote the performance of PSC devices by employing optically stable, low-cost and green p-type semiconductor SUPs.

Solution-Processed Cu9S5 as a Hole Transport Layer for Efficient and Stable Perovskite Solar Cells

Organic-inorganic perovskite solar cells have seen tremendous developments in recent years. As a hole transport material, 2,2',7,7'-tetrakis( N, N-di- p-methoxyphenylamine)-9,9'-spirobifluorene (Spiro-OMeTAD) is widely used in n-i-p perovskite solar cells. However, it may lead to the perovskite film degradation due to the dopant lithium bis((trifluoromethyl)sulfonyl)amide (Li-TFSI), which has strong hydrophilicity. Cu₉S₅ is considered as a superior p-type transport material, which also has a favorable energy level matching with the highest occupied molecular orbital of Spiro-OMeTAD. Herein, a solution-processed organic-inorganic-integrated hole transport layer was reported, which is composed of the undoped Spiro-OMeTAD and Cu₉S₅ layer. Since there is no Li-TFSI doping, it is extremely conductive to the long-term stability of the solar cells. In the meantime, we proposed a method to adjust the lowest unoccupied molecular orbital (LUMO) of SnO₂ via nitrogen implantation (N:SnO₂). The LUMO of SnO₂ can be tuned from -4.33 to -3.91 eV, which matches well with the LUMO of CH₃NH₃PbI₃ (-3.90 eV), and thus helps to reduce hysteresis. The modified hole and electron transport layers were applied in n-i-p perovskite solar cells, which achieve a maximum power conversion efficiency (PCE) of 17.10 and 96% retention of PCE after 1200 h in air atmosphere without any encapsulation.

Low-cost solution-processed digenite Cu9S5 counter electrode for dye-sensitized solar cells

Cu₉S₅ nanocrystalline film is fabricated by a solution-processed method with a low temperature post-treatment at 250 °C and it is further explored as a counter electrode (CE) material in DSSCs.

A novel MoS2-based hybrid film as the back electrode for high-performance thin film solar cells

A MoS₂-based complex film was developed with a high work function and thickness-dependent conductivity, which greatly improved the CdTe cell efficiency.

A novel p-type and metallic dual-functional Cu-Al2O3 ultra-thin layer as the back electrode enabling high performance of thin film solar cells

Increasing the open-circuit voltage (Voc) along with the fill factor (FF) is pivotal for the performance improvement of solar cells. In this work, we report the design and construction of a new structure of CdS/CdTe/Al2O3/Cu using the atomic layer deposition (ALD) method, and then we control Cu diffusion through the Al2O3 atomic layer into the CdTe layer. Surprisingly, this generates a novel p-type and metallic dual-functional Cu-Al2O3 atomic layer. Due to this dual-functional character of the Cu-Al2O3 layer, an efficiency improvement of 2% in comparison with the standard cell was observed. This novel dual-functional back contact structure could also be introduced into other thin film solar cells for their efficiency improvement.