A New Line Defect in NdTiO3 Perovskite

Exploring Defect Dynamics and Twin-Layer Interactions in SiC Crystals through Molecular Simulations

Silicon carbide (SiC), a third-generation semiconductor material, is pivotal for applications in new energy vehicles, aerospace, and high-speed electronics, owing to its superior properties. This study delves into the twin-induced growth behaviors of SiC crystals through molecular dynamics simulations at temperatures ranging from 2700 to 3200 K. It focuses on the wurtzite and zinc blende SiC structures, revealing dynamic defect behavior during growth, including an initial rise and subsequent decrease in vacancies, with particular emphasis on prevalent defects within zinc blende twin layers. A significant finding is the direct correlation between temperature and growth rates across different SiC structures, highlighting temperature control as essential for optimizing crystal quality. Furthermore, this work contributes to the analysis of the interactions of twin layers and their impact on structural stability and defect formation in SiC crystals. The insights gained here have substantial implications for the semiconductor industry, potentially enhancing device performance by better controlling growth conditions and defect management in SiC-based electronic and optoelectronic devices.

Offcut Substrate-Induced Defect Trapping at Step Edges

We report step edge-induced localized defects suppressing subsequent antiphase boundary formation in the bulk structure of a trilayer oxide heterostructure. The heterostructure encompasses a layer of La0.66Sr0.34MnO3 sandwiched between a superconducting La1.84Sr0.16CuO4 bottom layer and an insulating La2CuO4 top layer. The combination of a minor a-axis mismatch (0.11 Å) and a pronounced c-axis mismatch (2.73 Å) at the step edges leads to the emergence of localized defects exclusively forming at the step edge. Employing atomically resolved electron energy-loss spectroscopy maps, we discern the electronic state of those structures in the second La0.66Sr0.34MnO3 unit cell near the step edge. In particular, a reduction in the pre-edge region of the O-K edge indicates the formation of oxygen vacancies induced by the strained step edge. This study underscores our capability to control defects at the nanoscale.

Diverse Defects in Alkali Niobate Thin Films: Understanding at Atomic Scales and Their Implications on Properties

Defects in ferroelectric materials have many implications on the material properties which, in most cases, are detrimental. However, engineering these defects can also create opportunities for property enhancement as well as for tailoring novel functionalities. To purposely manipulate these defects, a thorough knowledge of their spatial atomic arrangement, as well as elastic and electrostatic interactions with the surrounding lattice, is highly crucial. In this work, analytical scanning transmission electron microscopy (STEM) is used to reveal a diverse range of multidimensional crystalline defects (point, line, planar, and secondary phase) in (K,Na)NbO₃ (KNN) ferroelectric thin films. The atomic-scale analyses of the defect-lattice interactions suggest strong elastic and electrostatic couplings which vary among the individual defects and correspondingly affect the electric polarization. In particular, the observed polarization orientations are correlated with lattice relaxations as well as strain gradients and can strongly impact the properties of the ferroelectric films. The knowledge and understanding obtained in this study open a new avenue for the improvement of properties as well as the discovery of defect-based functionalities in alkali niobate thin films.

Defect engineering of oxide perovskites for catalysis and energy storage: synthesis of chemistry and materials science

Oxide perovskites have emerged as an important class of materials with important applications in many technological areas, particularly thermocatalysis, electrocatalysis, photocatalysis, and energy storage. However, their implementation faces numerous challenges that are familiar to the chemist and materials scientist. The present work surveys the state-of-the-art by integrating these two viewpoints, focusing on the critical role that defect engineering plays in the design, fabrication, modification, and application of these materials. An extensive review of experimental and simulation studies of the synthesis and performance of oxide perovskites and devices containing these materials is coupled with exposition of the fundamental and applied aspects of defect equilibria. The aim of this approach is to elucidate how these issues can be integrated in order to shed light on the interpretation of the data and what trajectories are suggested by them. This critical examination has revealed a number of areas in which the review can provide a greater understanding. These include considerations of (1) the nature and formation of solid solutions, (2) site filling and stoichiometry, (3) the rationale for the design of defective oxide perovskites, and (4) the complex mechanisms of charge compensation and charge transfer. The review concludes with some proposed strategies to address the challenges in the future development of oxide perovskites and their applications.

Metallic line defect in wide-bandgap transparent perovskite BaSnO3

A line defect with metallic characteristics has been found in optically transparent BaSnO₃ perovskite thin films. The distinct atomic structure of the defect core, composed of Sn and O atoms, was visualized by atomic-resolution scanning transmission electron microscopy (STEM). When doped with La, dopants that replace Ba atoms preferentially segregate to specific crystallographic sites adjacent to the line defect. The electronic structure of the line defect probed in STEM with electron energy-loss spectroscopy was supported by ab initio theory, which indicates the presence of Fermi level-crossing electronic bands that originate from defect core atoms. These metallic line defects also act as electron sinks attracting additional negative charges in these wide-bandgap BaSnO₃ films.

Atomic scale characterization of point and extended defects in niobate thin films

Niobium-based oxides have a wide range of applications owing to their rich crystal and electronic structures. Defects at the atomic scale are always unavoidable and will affect their functionalities, especially when in the form of thin films. Here, atomic resolution scanning transmission electron microscopy and electron energy loss spectroscopy have been performed on various defects (point, line, planar defects and segregated phases) in alkaline and alkaline-earth niobate thin films: CaZrO₃ modified (K, Na)NbO₃ and strontium niobate (SNO), respectively. In CaZrO₃ modified (K,Na)NbO₃ thin films, a tetragonal tungsten bronze phase was found, with a sharp boundary with the perovskite phase. In SNO thin films, several kinds of point defects and antiphase boundaries are commonly observed. In addition, a strongly Sr deficient phase, SrNb₂O₆, precipitates inside the SrNbO₃ phase with a coherent interface. The different oxidation states of Nb in SrNbO₃ and SrNb₂O₆ were revealed from the O K edge. Our characterization of the point defects and extended defects in niobate thin films offers practical guidelines for thin film deposition or discovery of defect-based novel functionalities.

Low-Dimensional Oxygen Vacancy Ordering and Diffusion in SrCrO3-δ

We investigate the formation mechanisms of vacancy-ordered phase and collective mass transport in epitaxial SrCrO_3-δ films using ab initio simulations within the density functional theory formalism. We show that as the concentration of oxygen vacancies (V_O) increases, they form 1D chains that feature Cr-centered tetrahedra. Aggregation of these 1D V_O chains results in the formation of (111)-oriented oxygen-deficient planes and an extended vacancy-ordered phase observed in recent experiments. We discuss atomic-scale mechanisms enabling the quasi-2D V_O aggregates to expand along and translate across (111) planes. The corresponding lowest activation energy pathways necessarily involve rotation of Cr-centered tetrahedra, which emerges as a universal feature of fast ionic conduction in complex oxides. These findings explain reversible oxidation and reduction in SrCrO_3-δ at low temperatures and provide insights into transient behavior necessary to harness ionic conductive oxides for high-performance and low-temperature electrochemical reactors.