Vertically Integrated Nanowire-Based Unified Memory

Direct assembly of nanowires by electron beam-induced dielectrophoresis

Controllable self-assembly is an important tool to investigate interactions between nanoscale objects. Here we present an assembly strategy based on 3D aligned silicon nanowires. By illuminating the tips of nanowires locally by a focused electron beam, an attractive dielectrophoretic force can be induced, leading to elastic deformations and sticking between adjacent nanowires. The whole process is performed feasibly inside a vacuum environment free from capillary or hydrodynamic forces. Assembly mechanisms are discussed for nanowires in both one and two layers, and various ordered organizations are presented. With the help of moisture treatment, a hierarchical assembly can also be achieved. Notably, an unsynchronized assembly is observed in two layers of nanowires. This study helps with a better understanding of nanoscale sticking phenomena and electrostatic actuations in nanoelectromechanical systems, besides, it also provides possibilities to probe quantum effects like Casimir forces and phonon heat transport in a vacuum gap.

Composition-dependent nanoelectronics of amido-phenazines: non-volatile RRAM and WORM memory devices

A metal-free three component cyclization reaction with amidation is devised for direct synthesis of DFT-designed amido-phenazine derivative bearing noncovalent gluing interactions to fabricate organic nanomaterials. Composition-dependent organic nanoelectronics for nonvolatile memory devices are discovered using mixed phenazine-stearic acid (SA) nanomaterials. We discovered simultaneous two different types of nonmagnetic and non-moisture sensitive switching resistance properties of fabricated devices utilizing mixed organic nanomaterials: (a) sample-1(8:SA = 1:3) is initially off, turning on at a threshold, but it does not turn off again with the application of any voltage, and (b) sample-2 (8:SA = 3:1) is initially off, turning on at a sharp threshold and off again by reversing the polarity. No negative differential resistance is observed in either type. These samples have different device implementations: sample-1 is attractive for write-once-read-many-times memory devices, such as novel non-editable database, archival memory, electronic voting, radio frequency identification, sample-2 is useful for resistive-switching random access memory application.

Fluorine-Induced Highly Reproducible Resistive Switching Performance: Facile Morphology Control through the Transition between J- and H-Aggregation

Improving the reproducibility and air-endurance of organic resistance switching (RS) devices, in particular multilevel-cell RS devices, is critical for the confirmation of its competency to realize big data storage capability. However, such enhancement still remains challenging. In this report, we demonstrated that fluorine (F)-embedding should be an effective way to enhance the overall performance of RS devices. Four new azo-cored analogues (IDAZO, FIDAZO, F₂IDAZO, and F₄IDAZO) have been designed and synthesized. These four compounds have similar structures with different numbers of F substituents. Interestingly, UV-vis measurements reveal that upon F-embedding, an exceptional transition from molecular J-aggregation to H-aggregation is achieved. As a result, the morphology of RS films becomes more and more uniform, as determined by AFM and XRD. Meanwhile, the hydrophobicity of RS film is promoted, which further improves the device atmospheric stability. The total RS reproducibility increases to 96% (the uppermost value), and the tristage RS reproducibility rises to 64%, accompanied by a more stable OFF state and lower logic SET voltages. Our study suggests F-embedding would be a promising strategy to achieve highly reproducible and air-endurable organic multilevel-cell RS devices.