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Shen C, Yin Z, Collins F, Pinna N. Atomic Layer Deposition of Metal Oxides and Chalcogenides for High Performance Transistors. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2104599. [PMID: 35712776 PMCID: PMC9376853 DOI: 10.1002/advs.202104599] [Citation(s) in RCA: 13] [Impact Index Per Article: 6.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/15/2021] [Revised: 03/23/2022] [Indexed: 06/15/2023]
Abstract
Atomic layer deposition (ALD) is a deposition technique well-suited to produce high-quality thin film materials at the nanoscale for applications in transistors. This review comprehensively describes the latest developments in ALD of metal oxides (MOs) and chalcogenides with tunable bandgaps, compositions, and nanostructures for the fabrication of high-performance field-effect transistors. By ALD various n-type and p-type MOs, including binary and multinary semiconductors, can be deposited and applied as channel materials, transparent electrodes, or electrode interlayers for improving charge-transport and switching properties of transistors. On the other hand, MO insulators by ALD are applied as dielectrics or protecting/encapsulating layers for enhancing device performance and stability. Metal chalcogenide semiconductors and their heterostructures made by ALD have shown great promise as novel building blocks to fabricate single channel or heterojunction materials in transistors. By correlating the device performance to the structural and chemical properties of the ALD materials, clear structure-property relations can be proposed, which can help to design better-performing transistors. Finally, a brief concluding remark on these ALD materials and devices is presented, with insights into upcoming opportunities and challenges for future electronics and integrated applications.
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Affiliation(s)
- Chengxu Shen
- Institut für Chemie and IRIS Adlershof, Humboldt-Universität zu Berlin, Brook-Taylor-Str. 2, Berlin, 12489, Germany
| | - Zhigang Yin
- Institut für Chemie and IRIS Adlershof, Humboldt-Universität zu Berlin, Brook-Taylor-Str. 2, Berlin, 12489, Germany
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, 155 Yangqiao West Road, Fuzhou, Fujian, 350002, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian, 350108, China
| | - Fionn Collins
- Institut für Chemie and IRIS Adlershof, Humboldt-Universität zu Berlin, Brook-Taylor-Str. 2, Berlin, 12489, Germany
| | - Nicola Pinna
- Institut für Chemie and IRIS Adlershof, Humboldt-Universität zu Berlin, Brook-Taylor-Str. 2, Berlin, 12489, Germany
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Liu R, Yang S, Ding Y, Xia D. Study on thermodynamic property of pyrrolylaldiminate dialkyl-aluminum (Methyl- and Ethyl- substituted) complexes. J Organomet Chem 2022. [DOI: 10.1016/j.jorganchem.2021.122192] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
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Liu R, Yang S, Ding Y. Study on the Structure, Thermodynamic property, and Fluorescence of Pyridin‐2‐ylmethyl‐tert‐butylamine Dimethyl aluminum complex. Z Anorg Allg Chem 2021. [DOI: 10.1002/zaac.202000478] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
Affiliation(s)
- Ruiyuan Liu
- The Key Laboratory of synthetic and biological colloids, Ministry of Education, School of Chemical and Material Engineering Jiangnan University Wuxi 214122 Jiangsu Province China
| | - Shuyan Yang
- The Key Laboratory of synthetic and biological colloids, Ministry of Education, School of Chemical and Material Engineering Jiangnan University Wuxi 214122 Jiangsu Province China
| | - Yuqiang Ding
- The Key Laboratory of synthetic and biological colloids, Ministry of Education, School of Chemical and Material Engineering Jiangnan University Wuxi 214122 Jiangsu Province China
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Wang X, Zhang Y, Huang S, Yin H, Fan J, Wei K, Zheng Y, Wang W, Jiang H, Wu X, Wang X, Liu C, Liu X. Partially Crystallized Ultrathin Interfaces between GaN and SiN x Grown by Low-Pressure Chemical Vapor Deposition and Interface Editing. ACS APPLIED MATERIALS & INTERFACES 2021; 13:7725-7734. [PMID: 33529524 DOI: 10.1021/acsami.0c19483] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
The formation mechanism of the partially crystallized ultrathin layer at the interface between GaN and SiNx grown by low-pressure chemical vapor deposition was analyzed based on the chemical components of reactants and products detected by high-resolution sputter depth profile analysis by X-ray photoelectron spectroscopy. A reasonable mass action equation for the formation of Si2N2O was proposed from the feasibility analysis of the Gibbs free energy changes of the reaction. The high-energy-activated Ga2O on the surface likely assists in the synthesis of the crystallized components. A well-defined 1ML θ-Ga2O3 transition interface was inserted into Si2N2O/GaN pure interface supercell slabs to edit the unsaturated state of the bonds. Low-density states can be achieved when the effective charges of the unsaturated atoms are adjusted to a certain interval.
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Affiliation(s)
- Xinhua Wang
- High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
- Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
| | - Yange Zhang
- Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China
| | - Sen Huang
- High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
- Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
| | - Haibo Yin
- High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
| | - Jie Fan
- High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
| | - Ke Wei
- High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
| | - Yingkui Zheng
- High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
| | - Wenwu Wang
- Integrated Circuit Advanced Process Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
| | - Haojie Jiang
- Integrated Circuit Advanced Process Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
| | - Xuebang Wu
- Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China
| | - Xianping Wang
- Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China
| | - Changsong Liu
- Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China
| | - Xinyu Liu
- High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
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Zheng SL, Chen YS, Wang X, Hoffmann C, Volkov A. From the source: student-centred guest lecturing in a chemical crystallography class. J Appl Crystallogr 2018. [DOI: 10.1107/s1600576718004120] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 04/03/2023] Open
Abstract
Guest lecturing is an underutilized teaching strategy that provides depth and richness in college-level chemistry courses. The authors have found that student-centred guest lecturing that combines themed guest presentations, hands-on workshops (whenever possible) and small group conversations has yielded tremendous benefits. As a result, students have developed a lasting interest in chemical crystallography and have employed advanced experiments in their own research. The authors report on their experience in planning student-centred guest lecturing, advise on best practices, and demonstrate the long lasting positive impact on student learning and engagement.
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New insights towards strikingly improved room temperature ethanol sensing properties of p-type Ce-doped SnO 2 sensors. Sci Rep 2018; 8:8079. [PMID: 29799018 PMCID: PMC5967327 DOI: 10.1038/s41598-018-26504-3] [Citation(s) in RCA: 13] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/15/2017] [Accepted: 05/08/2018] [Indexed: 12/18/2022] Open
Abstract
In this article, room temperature ethanol sensing behavior of p-type Ce doped SnO2 nanostructures are investigated successfully. Interestingly, it is examined that the abnormal n to p-type transition behavior is caused by Ce doping in SnO2 lattice. In p-type Ce doped SnO2, Ce ion substituting the Sn is in favor of generating excess holes as oxygen vacancies, which is associated with the improved sensing performance. Although, p-type SnO2 is one of the important materials for practical applications, it is less studied as compared to n-type SnO2. Pure and Ce doped SnO2 nanostructures were successfully synthesized by chemical co-precipitation method. The structure, surface morphology, unpaired electrons (such as free radicals), and chemical composition of obtained nanoparticles were studied by various kinds of characterization techniques. The 9% Ce doped SnO2 sensors exhibit maximum sensor response of ~382 for 400 ppm of ethanol exposure with fast response time of ~5 to 25 sec respectively. Moreover, it is quite interesting that such enhancement of ethanol sensing is unveiled at room temperature, which plays a key role in the quest for better ethanol sensors. These remarkably improved sensing results are attributed to uniformly distributed nanoparticles, lattice strain, complex defect chemistry and presence of large number of unpaired electrons on the surface.
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Lee SM, Yum JH, Yoon S, Larsen ES, Lee WC, Kim SK, Shervin S, Wang W, Ryou JH, Bielawski CW, Oh J. Atomic-Layer Deposition of Single-Crystalline BeO Epitaxially Grown on GaN Substrates. ACS APPLIED MATERIALS & INTERFACES 2017; 9:41973-41979. [PMID: 29148718 DOI: 10.1021/acsami.7b13487] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
We have grown a single-crystal beryllium oxide (BeO) thin film on a gallium nitride (GaN) substrate by atomic-layer deposition (ALD) for the first time. BeO has a higher thermal conductivity, bandgap energy, and dielectric constant than SiO2. As an electrical insulator, diamond is the only material on earth whose thermal conductivity exceeds that of BeO. Despite these advantages, there is no chemical-vapor-deposition technique for BeO-thin-film deposition, and thus, it is not used in nanoscale-semiconductor-device processing. In this study, the BeO thin films grown on a GaN substrate with a single crystal showed excellent interface and thermal stability. Transmission electron microscopy showed clear diffraction patterns, and the Raman shifts associated with soft phonon modes verified the high thermal conductivity. The X-ray scan confirmed the out-of-plane single-crystal growth direction and the in-plane, 6-fold, symmetrical wurtzite structure. Single-crystalline BeO was grown on GaN despite the large lattice mismatch, which suggested a model that accommodated the strain of hexagonal-on-hexagonal epitaxy with 5/6 and 6/7 domain matching. BeO has a good dielectric constant and good thermal conductivity, bandgap energy, and single-crystal characteristics, so it is suitable for the gate dielectric of power semiconductor devices. The capacitance-voltage (C-V) results of BeO on a GaN-metal-oxide semiconductor exhibited low frequency dispersion, hysteresis, and interface-defect density.
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Affiliation(s)
- Seung Min Lee
- School of Integrated Technology, Yonsei University , Incheon 21983, Republic of Korea
- Yonsei Institute of Convergence Technology , Incheon 21983, Republic of Korea
| | - Jung Hwan Yum
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS) , Ulsan 44919, Republic of Korea
- Department of Chemistry, Ulsan National Institute of Science and Technology (UNIST) , Ulsan 44919, Republic of Korea
| | - Seonno Yoon
- School of Integrated Technology, Yonsei University , Incheon 21983, Republic of Korea
- Yonsei Institute of Convergence Technology , Incheon 21983, Republic of Korea
| | - Eric S Larsen
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS) , Ulsan 44919, Republic of Korea
- Department of Chemistry, Ulsan National Institute of Science and Technology (UNIST) , Ulsan 44919, Republic of Korea
| | - Woo Chul Lee
- Center for Electronic Materials, Korea Institute of Science and Technology (KIST) , Seoul 20792, Republic of Korea
| | - Seong Keun Kim
- Center for Electronic Materials, Korea Institute of Science and Technology (KIST) , Seoul 20792, Republic of Korea
| | - Shahab Shervin
- Department of Mechanical Engineering, University of Houston , Houston, Texas 77204-4006, United States
| | - Weijie Wang
- Department of Mechanical Engineering, University of Houston , Houston, Texas 77204-4006, United States
| | - Jae-Hyun Ryou
- Department of Mechanical Engineering, University of Houston , Houston, Texas 77204-4006, United States
- Materials Science and Engineering Program and Texas Center for Superconductivity at UH (TcSUH), University of Houston , Houston, Texas 77204, United States
| | - Christopher W Bielawski
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS) , Ulsan 44919, Republic of Korea
- Department of Chemistry, Ulsan National Institute of Science and Technology (UNIST) , Ulsan 44919, Republic of Korea
- Department of Energy Engineering, UNIST , Ulsan 44919, Republic of Korea
| | - Jungwoo Oh
- School of Integrated Technology, Yonsei University , Incheon 21983, Republic of Korea
- Yonsei Institute of Convergence Technology , Incheon 21983, Republic of Korea
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