Exploring Au Droplet Motion in Nanowire Growth: A Simple Route toward Asymmetric GaP Morphologies

Wurtzite Gallium Phosphide via Chemical Beam Epitaxy: Impurity-Related Luminescence vs Growth Conditions

The metastable wurtzite crystal phase in gallium phosphide (WZ GaP) is a relatively new structure with little available information about its emission properties compared to the most stable zinc-blend phase. Here, the effect of growth conditions of WZ GaP nano- and microstructures obtained via chemical beam epitaxy on the optical properties was studied using power- and temperature-dependent photoluminescence (PL). We showed that the PL spectra are dominated by two strong broad emission bands at 1.68 and 1.88 eV and two relatively narrow peaks at 2.04 and 2.09 eV. The broad emissions are associated with the presence of carbon and a small number of extended crystal defects, respectively. For the sharp emissions, two main radiative recombination channels were observed with ionization energies estimated in the range of 50-80 meV and lower than 10 meV. No variation of the low-temperature PL spectra was observed for samples grown at different P precursor flows, while increasing Ga content enhanced the dominant broad emission at around 1.68 eV, suggesting that the group III organometallic precursor is the main source of impurities. Finally, Be-doped samples were grown, and their characteristic optical emission at 2.03 eV was identified. These results contribute to the understanding of impurity-related luminescence in hexagonal GaP, being useful for further crystal growth optimization required for the fabrication of optoelectronic devices.

Optical Absorption Exhibits Pseudo-Direct Band Gap of Wurtzite Gallium Phosphide

Definitive evidence for the direct band gap predicted for Wurtzite Gallium Phosphide (WZ GaP) nanowires has remained elusive due to the lack of strong band-to-band luminescence in these materials. In order to circumvent this problem, we successfully obtained large volume WZ GaP structures grown by nanoparticle-crawling assisted Vapor-Liquid-Solid method. With these structures, we were able to observe bound exciton recombination at 2.14 eV with FHWM of approximately 1 meV. In addition, we have measured the optical absorption edges using photoluminescence excitation spectroscopy. Our results show a 10 K band gap at 2.19 eV and indicate a weak oscillator strength for the lowest energy band-to-band absorption edge, which is a characteristic feature of a pseudo-direct band gap semiconductor. Furthermore, the valence band splitting energies are estimated as 110 meV and 30 meV for the three highest bands. Electronic band structure calculations using the HSE06 hybrid density functional agree qualitatively with the valence band splitting energies.

Towards the understanding of the gold interaction with AIII-BV semiconductors at the atomic level

AIII-BV semiconductors have been considered to be a promising material for decades in overcoming the limitations of silicon semiconductor devices. One of the important aspects within the AIII-BV semiconductor technology is gold-semiconductor interactions on the nanoscale. We report on the investigations into the basic chemical interactions of Au atoms with AIII-BV semiconductor crystals by the investigation of the nanostructure formation in the process of thermally-induced Au self-assembly on various AIII-BV surfaces by means of atomically resolved High Angle Annular Dark Field (HAADF) Scanning Transmission Electron Microscopy (STEM) measurements. We have found that the formation of nanostructures is a consequence of the surface diffusion and nucleation of adatoms produced by Au induced chemical reactions on AIII-BV semiconductor surfaces. Only for InSb crystals we have found that there is efficient diffusion of Au atoms into the bulk, which we experimentally studied by Machine Learning HAADF STEM image quantification and theoretically by Density Functional Theory (DFT) calculations with the inclusion of finite temperature effects. Furthermore, the effective number of Au atoms needed to release one AIII metal atom has been estimated. The experimental finding reveals a difference in the Au interactions with the In- and Ga-based groups of AIII-BV semiconductors. Our comprehensive and systematic studies uncover the details of the Au interactions with the AIII-BV surface at the atomic level with chemical sensitivity and shed new light on the fundamental Au/AIII-BV interactions at the atomic scale.

Nanowire Electronics: From Nanoscale to Macroscale

Semiconductor nanowires have attracted extensive interest as one of the best-defined classes of nanoscale building blocks for the bottom-up assembly of functional electronic and optoelectronic devices over the past two decades. The article provides a comprehensive review of the continuing efforts in exploring semiconductor nanowires for the assembly of functional nanoscale electronics and macroelectronics. Specifically, we start with a brief overview of the synthetic control of various semiconductor nanowires and nanowire heterostructures with precisely controlled physical dimension, chemical composition, heterostructure interface, and electronic properties to define the material foundation for nanowire electronics. We then summarize a series of assembly strategies developed for creating well-ordered nanowire arrays with controlled spatial position, orientation, and density, which are essential for constructing increasingly complex electronic devices and circuits from synthetic semiconductor nanowires. Next, we review the fundamental electronic properties and various single nanowire transistor concepts. Combining the designable electronic properties and controllable assembly approaches, we then discuss a series of nanoscale devices and integrated circuits assembled from nanowire building blocks, as well as a unique design of solution-processable nanowire thin-film transistors for high-performance large-area flexible electronics. Last, we conclude with a brief perspective on the standing challenges and future opportunities.

Growth, structural and optical characterization of wurtzite GaP nanowires

Bulk gallium phosphide (GaP) crystallizes in the zinc-blende (ZB) structure and has an indirect bandgap. However, GaP nanowires (NWs) can be synthesized in the wurtzite (WZ) phase as well. The contradictory theoretical predictions and experimental reports on the band structure of WZ GaP suggest a direct or a pseudo-direct bandgap. There are only a few reports of the growth and luminescence from WZ and ZB GaP NWs. We first present a comprehensive study of the gold-catalyzed growth of GaP NWs via metalorganic vapor phase epitaxy on various crystalline and amorphous substrates. We optimized the growth parameters like temperature, pressure and reactant flow rates to grow WZ GaP NWs with minimal taper. These wires were characterized using electron microscopy, x-ray diffraction, Raman scattering and photoluminescence spectroscopy. The luminescence studies of bare GaP NWs and GaP/AlGaP core-shell heterostructures with WZ- and ZB-phase GaP cores suggest that the WZ-phase GaP has a pseudo-direct bandgap with weak near-band-edge luminescence intensity.