A Strain-Driven Antiferroelectric-to-Ferroelectric Phase Transition in La-Doped BiFeO3 Thin Films on Si

Magnetic skyrmions and their manipulations in a 2D multiferroic CuCrP2Te6 monolayer

Magnetic skyrmions and their effective manipulations are promising for the design of next-generation information storage and processing devices, due to their topologically protected chiral spin textures and low energy cost. They, therefore, have attracted significant interest from the communities of condensed matter physics and materials science. Herein, based on density functional theory (DFT) calculations and micromagnetic simulations, we report the spontaneous 2 nm-diameter magnetic skyrmions in the monolayer CuCrP2Te6 originating from the synergistic effect of broken inversion symmetry and strong Dzyaloshinskii-Moriya interactions (DMIs). The creation and annihilation of magnetic skyrmions can be achieved via the ferroelectric to anti-ferroelectric (FE-to-AFE) transition, due to the variation of the magnetic parameter D2/|KJ|. Moreover, we also found that the DMIs and Heisenberg isotropic exchange can be manipulated by bi-axial strain, to effectively enhance skyrmion stability. Our findings provide feasible approaches to manipulate the skyrmions, which can be used for the design of next-generation information storage devices.

Strategies for enhancing performance of perovskite bismuth ferrite photocatalysts (BiFeO3): A comprehensive review

Organic pollutants pose a significant threat to water safety, and their degradation is of paramount importance. Photocatalytic technology has emerged as a promising approach for environmental remediation, and Bismuth ferrite (BiFeO3) has been shown to exhibit remarkable potential for photocatalytic degradation of water pollutants, with its excellent crystal structure properties and visible light photocatalytic activity. This review presents an overview of the crystal properties and photocatalytic mechanism of perovskite bismuth ferrite (BiFeO3), as well as a summary of various strategies for enhancing its efficiency in photocatalytic degradation of organic pollutants. These strategies include pure phase preparation, microscopic modulation, composite modification of BiFeO3, and the integration of Fenton-like reactions and external field-assisted methods to improve its photocatalytic performance. The review emphasizes the impact of each strategy on photocatalytic enhancement. By providing comprehensive strategies for improving the efficiency of BiFeO3 photocatalysis, this review inspires new insights for efficient degradation of organic pollutants using BiFeO3 photocatalysis and contributes to the development of photocatalysis in environmental remediation.

Continuously tunable ferroelectric domain width down to the single-atomic limit in bismuth tellurite

Emerging functionalities in two-dimensional materials, such as ferromagnetism, superconductivity and ferroelectricity, open new avenues for promising nanoelectronic applications. Here, we report the discovery of intrinsic in-plane room-temperature ferroelectricity in two-dimensional Bi₂TeO₅ grown by chemical vapor deposition, where spontaneous polarization originates from Bi column displacements. We found an intercalated buffer layer consist of mixed Bi/Te column as 180° domain wall which enables facile polarized domain engineering, including continuously tunable domain width by pinning different concentration of buffer layers, and even ferroelectric-antiferroelectric phase transition when the polarization unit is pinned down to single atomic column. More interestingly, the intercalated Bi/Te buffer layer can interconvert to polarized Bi columns which end up with series terraced domain walls and unusual fan-shaped ferroelectric domain. The buffer layer induced size and shape tunable ferroelectric domain in two-dimensional Bi₂TeO₅ offer insights into the manipulation of functionalities in van der Waals materials for future nanoelectronics.

Tunability of ferroelectric domain structure is significant in ferroelectric materials. Here, the authors present in-plane ferroelectricity in 2D Bi₂TeO₅ in which the ferroelectric domain size and shape can be continuously tuned by the Bi/Te ratio.

Ultrathin Van der Waals Antiferromagnet CrTe3 for Fabrication of In-Plane CrTe3 /CrTe2 Monolayer Magnetic Heterostructures

Ultrathin van der Waals (vdW) magnets are heavily pursued for potential applications in developing high-density miniaturized electronic/spintronic devices as well as for topological physics in low-dimensional structures. Despite the rapid advances in ultrathin ferromagnetic vdW magnets, the antiferromagnetic counterparts, as well as the antiferromagnetic junctions, are much less studied owing to the difficulties in both material fabrication and magnetism characterization. Ultrathin CrTe₃ layers have been theoretically proposed to be a vdW antiferromagnetic semiconductor with intrinsic intralayer antiferromagnetism. Herein, the epitaxial growth of monolayer (ML) and bilayer CrTe₃ on graphite surface is demonstrated. The structure, electronic and magnetic properties of the ML CrTe₃ are characterized by combining scanning tunneling microscopy/spectroscopy and non-contact atomic force microscopy and confirmed by density functional theory calculations. The CrTe₃ MLs can be further utilized for the fabrication of a lateral heterojunction consisting of ML CrTe₂ and ML CrTe₃ with an atomically sharp and seamless interface. Since ML CrTe₂ is a metallic vdW magnet, such a heterostructure presents the first in-plane magnetic metal-semiconductor heterojunction made of two vdW materials. The successful fabrication of ultrathin antiferromagnetic CrTe₃ , as well as the magnetic heterojunction, will stimulate the development of miniaturized antiferromagnetic spintronic devices based on vdW materials.

Ca Solubility in a BiFeO3-Based System with a Secondary Bi2O3 Phase on a Nanoscale

In BiFeO₃ (BFO), Bi₂O₃ (BO) is a known secondary phase, which can appear under certain growth conditions. However, BO is not just an unwanted parasitic phase but can be used to create the super-tetragonal BFO phase in films on substrates, which would otherwise grow in the regular rhombohedral phase (R-phase). The super-tetragonal BFO phase has the advantage of a much larger ferroelectric polarization of 130-150 μC/cm², which is around 1.5 times the value of the rhombohedral phase with 80-100 μC/cm². Here, we report that the solubility of Ca, which is a common dopant of bismuth ferrite materials to tune their properties, is significantly lower in the secondary BO phase than in the observed R-phase BFO. Starting from the film growth, this leads to completely different Ca concentrations in the two phases. We show this with advanced analytical transmission electron microscopy techniques and confirm the experimental results with density functional theory (DFT) calculations. At the film's fabrication temperature, caused by different solubilities, about 50 times higher Ca concentration is expected in the BFO phase than in the secondary one. Depending on the cooling rate after fabrication, this can further increase since a larger Ca concentration difference is expected at lower temperatures. When fabricating functional devices using Ca doping and the secondary BO phase, the difference in solubility must be considered because, depending on the ratio of the BO phase, the Ca concentration in the BFO phase can become much higher than intended. This can be critical for the intended device functionality because the Ca concentration strongly influences and modifies the BFO properties.

Structural Phase Transition and In-Situ Energy Storage Pathway in Nonpolar Materials: A Review

Benefitting from exceptional energy storage performance, dielectric-based capacitors are playing increasingly important roles in advanced electronics and high-power electrical systems. Nevertheless, a series of unresolved structural puzzles represent obstacles to further improving the energy storage performance. Compared with ferroelectrics and linear dielectrics, antiferroelectric materials have unique advantages in unlocking these puzzles due to the inherent coupling of structural transitions with the energy storage process. In this review, we summarize the most recent studies about in-situ structural phase transitions in PbZrO₃-based and NaNbO₃-based systems. In the context of the ultrahigh energy storage density of SrTiO₃-based capacitors, we highlight the necessity of extending the concept of antiferroelectric-to-ferroelectric (AFE-to-FE) transition to broader antiferrodistortive-to-ferrodistortive (AFD-to-FD) transition for materials that are simultaneously ferroelastic. Combining discussion of the factors driving ferroelectricity, electric-field-driven metal-to-insulator transition in a (La_1−xSr_x)MnO₃ electrode is emphasized to determine the role of ionic migration in improving the storage performance. We believe that this review, aiming at depicting a clearer structure–property relationship, will be of benefit for researchers who wish to carry out cutting-edge structure and energy storage exploration.

Negatively Charged In-Plane and Out-Of-Plane Domain Walls with Oxygen-Vacancy Agglomerations in a Ca-Doped Bismuth-Ferrite Thin Film

The interaction of oxygen vacancies and ferroelectric domain walls is of great scientific interest because it leads to different domain-structure behaviors. Here, we use high-resolution scanning transmission electron microscopy to study the ferroelectric domain structure and oxygen-vacancy ordering in a compressively strained Bi_0.9Ca_0.1FeO_3-δ thin film. It was found that atomic plates, in which agglomerated oxygen vacancies are ordered, appear without any periodicity between the plates in out-of-plane and in-plane orientation. The oxygen non-stoichiometry with δ ≈ 1 in FeO_2-δ planes is identical in both orientations and shows no preference. Within the plates, the oxygen vacancies form 1D channels in a pseudocubic [010] direction with a high number of vacancies that alternate with oxygen columns with few vacancies. These plates of oxygen vacancies always coincide with charged domain walls in a tail-to-tail configuration. Defects such as ordered oxygen vacancies are thereby known to lead to a pinning effect of the ferroelectric domain walls (causing application-critical aspects, such as fatigue mechanisms and countering of retention failure) and to have a critical influence on the domain-wall conductivity. Thus, intentional oxygen vacancy defect engineering could be useful for the design of multiferroic devices with advanced functionality.

Size-Controlled Polarization Retention and Wall Current in Lithium Niobate Single-Crystal Memories

Highly conductive domain walls in insulating ferroelectric LiNbO₃ (LNO) single-crystal thin films with atomic smoothness are attractive for use in high-density integration of the ferroelectric domain wall random access memory (DWRAM) because of their excellent reliability and high read currents. However, downscaling of the memory size to the nanoscale could cause poor polarization retention. Understanding the size-dependent electrical performance of a memory cell is therefore crucial. In this work, highly insulating X-cut LNO thin films were bonded to SiO₂/Si wafers and lateral mesa-like cells were fabricated on the film surfaces, where contact occurred with two-sided electrodes along the polar z-axis. Under application of an in-plane electric field above a coercive field (E_c), the domain within each memory cell was switched to be antiparallel to the unswitched referencing domain at the bottom; this resulted in the formation of a conducting domain wall, which enables the nondestructive readout strategy of the DWRAM. The cell, which has a lateral length (l) above a critical size (l₀) of 105 nm, is found to be a mixture of two phases across the cell area. The inner area of the cell suffers from poor polarization retention because E_c = 150 kV/cm, as demonstrated by in-plane piezoresponse force microscopy imaging. In comparison, the outer periphery domains, which have lengths of 70 nm (∼l₀/2), show good retention but require a much higher E_c of 785 kV/cm. The relevant physics is discussed as phase reconstruction occurs after release of the in-plane compressive strain near the outer regions; the results show good agreement with those of one-dimensional thermodynamic calculations and phase-field simulations. The measured current-voltage curves demonstrated a sudden enhancement of the wall current across the cell when l < l₀, thus implying higher readout wall currents and better retention for the DWRAM at higher storage densities.

Controllable defect driven symmetry change and domain structure evolution in BiFeO3 with enhanced tetragonality

Defect engineering has been a powerful tool to enable the creation of exotic phases and the discovery of intriguing phenomena in ferroelectric oxides. However, the accurate control of the concentration of defects remains a big challenge. In this work, ion implantation, which can provide controllable point defects, allows us to produce a controlled defect driven true super-tetragonal (T) phase with a single-domain-state in ferroelectric BiFeO3 thin films. This point-defect engineering is found to drive the phase transition from the as-grown mixed rhombohedral-like (R) and tetragonal-like (MC) phase to true tetragonal (T) symmetry and induce the stripe multi-nanodomains to a single domain state. By further increasing the injected dose of the He ion, we demonstrate an enhanced tetragonality super-tetragonal (super-T) phase with the largest c/a ratio of ∼1.3 that has ever been experimentally achieved in BiFeO3. A combination of the morphology change and domain evolution further confirms that the mixed R/MC phase structure transforms to the single-domain-state true tetragonal phase. Moreover, the re-emergence of the R phase and in-plane nanoscale multi-domains after heat treatment reveal the memory effect and reversible phase transition and domain evolution. Our findings demonstrate the reversible control of R-Mc-T-super T symmetry changes (leading to the creation of true T phase BiFeO3 with enhanced tetragonality) and multidomain-single domain structure evolution through controllable defect engineering. This work also provides a pathway to generate large tetragonality (or c/a ratio) that could be extended to other ferroelectric material systems (such as PbTiO3, BaTiO3 and HfO2) which might lead to strong polarization enhancement.

High-Performance Photovoltaic Readable Ferroelectric Nonvolatile Memory Based on La-Doped BiFeO3 Films

Epitaxial La_0.1Bi_0.9FeO₃ (LBFO) films with SrRuO₃ (SRO) bottom electrodes were fabricated on SrTiO₃(001) substrates by magnetron sputtering. The LBFO thin films exhibit strong ferroelectric properties. Nonvolatile reversible resistance switchings and switchable photovoltaic effects controlled by electric field have been observed in Pt/LBFO/SRO heterostructures. With the optimized LBFO film thickness, the observed room temperature pulsed-read resistance switching ratio can reach 10⁵% magnitude by applying ±2.7 V pulse voltages. Besides, the observed ferroelectric switchable photovoltaic effect in the visible wavelength range shows a large tunable open-circuit photovoltage from -75 to -330 mV. The switching mechanisms in resistance and photovoltaic effects are demonstrated to be directly related to the ferroelectric reversal, which can be attributed to the polarization-modulated interfacial barriers and deep trap states.

Strain-Driven Nanoscale Phase Competition near the Antipolar-Nonpolar Phase Boundary in Bi0.7La0.3FeO3 Thin Films

Complex-oxide materials tuned to be near phase boundaries via chemistry/composition, temperature, pressure, etc. are known to exhibit large susceptibilities. Here, we observe a strain-driven nanoscale phase competition in epitaxially constrained Bi_0.7La_0.3FeO₃ thin films near the antipolar-nonpolar phase boundary and explore the evolution of the structural, dielectric, (anti)ferroelectric, and magnetic properties with strain. We find that compressive and tensile strains can stabilize an antipolar PbZrO₃-like Pbam phase and a nonpolar Pnma orthorhombic phase, respectively. Heterostructures grown with little to no strain exhibit a self-assembled nanoscale mixture of the two orthorhombic phases, wherein the relative fraction of each phase can be modified with film thickness. Subsequent investigation of the dielectric and (anti)ferroelectric properties reveals an electric-field-driven phase transformation from the nonpolar phase to the antipolar phase. X-ray linear dichroism reveals that the antiferromagnetic-spin axes can be effectively modified by the strain-induced phase transition. This evolution of antiferromagnetic-spin axes can be leveraged in exchange coupling between the antiferromagnetic Bi_0.7La_0.3FeO₃ and a ferromagnetic Co_0.9Fe_0.1 layer to tune the ferromagnetic easy axis of the Co_0.9Fe_0.1. These results demonstrate that besides chemical alloying, epitaxial strain is an alternative and effective way to modify subtle phase relations and tune physical properties in rare earth-alloyed BiFeO₃. Furthermore, the observation of antiferroelectric-antiferromagnetic properties in the Pbam Bi_0.7La_0.3FeO₃ phase could be of significant scientific interest and great potential in magnetoelectric devices because of its dual antiferroic nature.

Observation of Exotic Domain Structures in Ferroelectric Nanodot Arrays Fabricated via a Universal Nanopatterning Approach

We report a facile and cost-competitive nanopatterning route, using Ar ion beam etching through a monolayer polystyrene sphere (PS) array placed on a ferroelectric epitaxial thin film, to fabricate ordered ferroelectric nanodot arrays. Using this method, well-ordered BiFeO₃ epitaxial nanodots, with tunable sizes from ∼100 to ∼900 nm in diameter, have been successfully synthesized. Interestingly, a plethora of exotic nanodomain structures, e.g., stripe domains, vortex and antivortex domains, and single domains, are observed in these nanodots. Moreover, this novel technique has been extended to produce Pb(Zr,Ti)O₃ nanodots and multiferroic composite Co/BiFeO₃ nanodots. These observations enable the creation of exotic domain structures and provide a wide range of application potentials for future nanoelectronic devices.

BiFeO3 nanorings synthesized via AAO template-assisted pulsed laser deposition and ion beam etching

Well-ordered BiFeO₃ nanorings with epitaxial structure, strong ferroelectricity and polarization reversal have been fabricated using this novel and facile method.