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Hayden S, Chisholm C, Eichmann SL, Grudt R, Frankel GS, Hanna B, Headrick T, Jungjohann KL. Genesis of Nanogalvanic Corrosion Revealed in Pearlitic Steel. NANO LETTERS 2022; 22:7087-7093. [PMID: 36047707 PMCID: PMC9479139 DOI: 10.1021/acs.nanolett.2c02122] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 05/25/2022] [Revised: 08/24/2022] [Indexed: 06/15/2023]
Abstract
Nanoscale, localized corrosion underpins billions of dollars in damage and material costs each year; however, the processes responsible have remained elusive due to the complexity of studying degradative material behavior at nanoscale liquid-solid interfaces. Recent improvements to liquid cell scanning/transmission electron microscopy and associated techniques enable this first look at the nanogalvanic corrosion processes underlying this widespread damage. Nanogalvanic corrosion is observed to initiate at the near-surface ferrite/cementite phase interfaces that typify carbon steel. In minutes, the corrosion front delves deeper into the material, claiming a thin layer of ferrite around all exposed phase boundaries before progressing laterally, converting the ferrite to corrosion product normal to each buried cementite grain. Over the following few minutes, the corrosion product that lines each cementite grain undergoes a volumetric expansion, creating a lateral wedging force that mechanically ejects the cementite grains from their grooves and leaves behind percolation channels into the steel substructure.
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Affiliation(s)
- Steven
C. Hayden
- Aramco
Research Center − Boston, Aramco
Americas, Cambridge, Massachusetts 02139, United States
| | - Claire Chisholm
- Sandia
National Laboratories, Center for Integrated Nanotechnologies, Albuquerque, New Mexico 87185, United States
| | - Shannon L. Eichmann
- Aramco
Research Center − Boston, Aramco
Americas, Cambridge, Massachusetts 02139, United States
| | - Rachael Grudt
- Aramco
Research Center − Boston, Aramco
Americas, Cambridge, Massachusetts 02139, United States
| | - Gerald S. Frankel
- Fontana
Corrosion Center, Ohio State University, Columbus, Ohio 43210, United States
| | - Brian Hanna
- Aramco
Research Center − Boston, Aramco
Americas, Cambridge, Massachusetts 02139, United States
| | - Tatiana Headrick
- Aramco
Research Center − Boston, Aramco
Americas, Cambridge, Massachusetts 02139, United States
| | - Katherine L. Jungjohann
- Sandia
National Laboratories, Center for Integrated Nanotechnologies, Albuquerque, New Mexico 87185, United States
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2
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Milano G, Aono M, Boarino L, Celano U, Hasegawa T, Kozicki M, Majumdar S, Menghini M, Miranda E, Ricciardi C, Tappertzhofen S, Terabe K, Valov I. Quantum Conductance in Memristive Devices: Fundamentals, Developments, and Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2201248. [PMID: 35404522 DOI: 10.1002/adma.202201248] [Citation(s) in RCA: 16] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/07/2022] [Revised: 03/23/2022] [Indexed: 06/14/2023]
Abstract
Quantum effects in novel functional materials and new device concepts represent a potential breakthrough for the development of new information processing technologies based on quantum phenomena. Among the emerging technologies, memristive elements that exhibit resistive switching, which relies on the electrochemical formation/rupture of conductive nanofilaments, exhibit quantum conductance effects at room temperature. Despite the underlying resistive switching mechanism having been exploited for the realization of next-generation memories and neuromorphic computing architectures, the potentialities of quantum effects in memristive devices are still rather unexplored. Here, a comprehensive review on memristive quantum devices, where quantum conductance effects can be observed by coupling ionics with electronics, is presented. Fundamental electrochemical and physicochemical phenomena underlying device functionalities are introduced, together with fundamentals of electronic ballistic conduction transport in nanofilaments. Quantum conductance effects including quantum mode splitting, stability, and random telegraph noise are analyzed, reporting experimental techniques and challenges of nanoscale metrology for the characterization of memristive phenomena. Finally, potential applications and future perspectives are envisioned, discussing how memristive devices with controllable atomic-sized conductive filaments can represent not only suitable platforms for the investigation of quantum phenomena but also promising building blocks for the realization of integrated quantum systems working in air at room temperature.
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Affiliation(s)
- Gianluca Milano
- Advanced Materials Metrology and Life Sciences Division, INRiM (Istituto Nazionale di Ricerca Metrologica), Strada delle Cacce 91, Torino, 10135, Italy
| | - Masakazu Aono
- International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki, 305-0044, Japan
| | - Luca Boarino
- Advanced Materials Metrology and Life Sciences Division, INRiM (Istituto Nazionale di Ricerca Metrologica), Strada delle Cacce 91, Torino, 10135, Italy
| | - Umberto Celano
- IMEC, Kapeldreef 75, Heverlee, Leuven, B-3001, Belgium
- Faculty of Science and Technology and MESA+ Institute for Nanotechnology, University of Twente, Enschede, NB, 7522, The Netherlands
| | - Tsuyoshi Hasegawa
- Faculty of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku-ku, Tokyo, 169-8555, Japan
| | - Michael Kozicki
- School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, AZ, 85287, USA
| | - Sayani Majumdar
- VTT Technical Research Centre of Finland Ltd., VTT, P.O. Box 1000, Espoo, FI-02044, Finland
| | | | - Enrique Miranda
- Departament d'Enginyeria Electrònica, Universitat Autònoma de Barcelona (UAB), Barcelona, 08193, Spain
| | - Carlo Ricciardi
- Department of Applied Science and Technology, Politecnico di Torino, C.so Duca degli Abruzzi 24, Torino, 10129, Italy
| | - Stefan Tappertzhofen
- Chair for Micro- and Nanoelectronics, Department of Electrical Engineering and Information Technology, TU Dortmund University, Emil-Figge-Straße 68, D-44227, Dortmund, Germany
| | - Kazuya Terabe
- International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki, 305-0044, Japan
| | - Ilia Valov
- JARA - Fundamentals for Future Information Technology, 52425, Jülich, Germany
- Peter-Grünberg-Institut (PGI 7), Forschungszentrum Jülich, Wilhelm-Johnen-Straße, 52425, Jülich, Germany
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3
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Tian X, Brennecka GL, Tan X. Direct Observations of Field-Intensity-Dependent Dielectric Breakdown Mechanisms in TiO 2 Single Nanocrystals. ACS NANO 2020; 14:8328-8334. [PMID: 32530595 DOI: 10.1021/acsnano.0c02346] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
One of the main challenges for next-generation electric power systems and electronics is to avoid premature dielectric breakdown in insulators and capacitors and to ensure reliable operations at higher electric fields and higher efficiencies. However, dielectric breakdown is a complex phenomenon and often involves many different processes simultaneously. Here we show distinctly different defect-related and intrinsic breakdown processes by studying individual, single-crystalline TiO2 nanoparticles using in situ transmission electron microscopy (TEM). As the applied electric field intensity rises, rutile-to-anatase phase transition, local amorphization/melting, and ablation are identified as the corresponding breakdown processes, the field intensity thresholds of which are found to be related to the position of the intensified field and the duration of the applied bias relative to the time of charged defects accumulation. Our observations reveal an intensity-dependent dielectric response of crystalline oxides at breakdown and suggest possible routes to suppress the initiation of premature dielectric breakdown. Hence, they will aid the design and development of next-generation robust and efficient solid dielectrics.
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Affiliation(s)
- Xinchun Tian
- Department of Materials Science and Engineering, Iowa State University, Ames, Iowa 50011, United States
| | - Geoff Lee Brennecka
- Department of Metallurgical and Materials Engineering, Colorado School of Mines, Golden, Colorado 80401, United States
| | - Xiaoli Tan
- Department of Materials Science and Engineering, Iowa State University, Ames, Iowa 50011, United States
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4
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Chen G, Guo C, Cheng Y, Lu H, Cui J, Hu W, Jiang R, Jiang N. High Density Static Charges Governed Surface Activation for Long-Range Motion and Subsequent Growth of Au Nanocrystals. NANOMATERIALS 2019; 9:nano9030328. [PMID: 30823673 PMCID: PMC6473974 DOI: 10.3390/nano9030328] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/21/2019] [Revised: 02/15/2019] [Accepted: 02/17/2019] [Indexed: 12/01/2022]
Abstract
How a heavily charged metal nanocrystal, and further a dual-nanocrystals system behavior with continuous electron charging? This refers to the electric dynamics in charged particles as well as the crystal growth for real metal particles, but it is still opening in experimental observations and interpretations. To this end, we performed an in-situ electron-beam irradiation study using transmission electron microscopy (TEM) on the Au nanocrystals that freely stand on the nitride boron nanotube (BNNT). Au nanocrystalline particles with sizes of 2–4 nm were prepared by a well-controlled sputtering method to stand on the BNNT surface without chemical bonding interactions. Au nanoparticles presented the surface atomic disorder, diffusion phenomena with continuous electron-beam irradiation, and further, the long-range motion that contains mainly the three stages: charging, activation, and adjacence, which are followed by final crystal growth. Firstly, the growth process undergoes the lattice diffusion and subsequently the surface-dominated diffusion mechanism. These abnormal phenomena and observations, which are fundamentally distinct from classic cases and previous reports, are mainly due to the overcharging of Au nanoparticle that produces a surface activation state in terms of high-energy plasma. This work therefore brings about new observations for both a single and dual-nanocrystals system, as well as new insights in understanding the resulting dynamics behaviors.
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Affiliation(s)
- Guoxin Chen
- Key Laboratory of Marine Materials and Related Technologies, Zhejiang Key Laboratory of Marine Materials and Protective Technologies, Ningbo Institute of Materials Technology & Engineering, Chinese Academy of Sciences, Ningbo 315201, China.
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, 19A Yuquan Rd., Shijingshan District, Beijing 100049, China.
| | - Changjin Guo
- School of Materials Science and Engineering, Yunnan University, Kunming 650091, China.
| | - Yao Cheng
- Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China.
| | - Huanming Lu
- Key Laboratory of Marine Materials and Related Technologies, Zhejiang Key Laboratory of Marine Materials and Protective Technologies, Ningbo Institute of Materials Technology & Engineering, Chinese Academy of Sciences, Ningbo 315201, China.
| | - Junfeng Cui
- Key Laboratory of Marine Materials and Related Technologies, Zhejiang Key Laboratory of Marine Materials and Protective Technologies, Ningbo Institute of Materials Technology & Engineering, Chinese Academy of Sciences, Ningbo 315201, China.
| | - Wanbiao Hu
- School of Materials Science and Engineering, Yunnan University, Kunming 650091, China.
| | - Rongrong Jiang
- Key Laboratory of Marine Materials and Related Technologies, Zhejiang Key Laboratory of Marine Materials and Protective Technologies, Ningbo Institute of Materials Technology & Engineering, Chinese Academy of Sciences, Ningbo 315201, China.
| | - Nan Jiang
- Key Laboratory of Marine Materials and Related Technologies, Zhejiang Key Laboratory of Marine Materials and Protective Technologies, Ningbo Institute of Materials Technology & Engineering, Chinese Academy of Sciences, Ningbo 315201, China.
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, 19A Yuquan Rd., Shijingshan District, Beijing 100049, China.
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