Barrier Inhomogeneities in Atomic Contacts on WS2

Metrology for 2D materials: a perspective review from the international roadmap for devices and systems

The International Roadmap for Devices and Systems (IRDS) predicts the integration of 2D materials into high-volume manufacturing as channel materials within the next decade, primarily in ultra-scaled and low-power devices. While their widespread adoption in advanced chip manufacturing is evolving, the need for diverse characterization methods is clear. This is necessary to assess structural, electrical, compositional, and mechanical properties to control and optimize 2D materials in mass-produced devices. Although the lab-to-fab transition remains nascent and a universal metrology solution is yet to emerge, rapid community progress underscores the potential for significant advancements. This paper reviews current measurement capabilities, identifies gaps in essential metrology for CMOS-compatible 2D materials, and explores fundamental measurement science limitations when applying these techniques in high-volume semiconductor manufacturing.

Validating the Use of Conductive Atomic Force Microscopy for Defect Quantification in 2D Materials

Defects significantly affect the electronic, chemical, mechanical, and optical properties of two-dimensional (2D) materials. Thus, it is critical to develop a method for convenient and reliable defect quantification. Scanning transmission electron microscopy (STEM) and scanning tunneling microscopy (STM) possess the required atomic resolution but have practical disadvantages. Here, we benchmark conductive atomic force microscopy (CAFM) by a direct comparison with STM in the characterization of transition metal dichalcogenides (TMDs). The results conclusively demonstrate that CAFM and STM image identical defects, giving results that are equivalent both qualitatively (defect appearance) and quantitatively (defect density). Further, we confirm that CAFM can achieve single-atom resolution, similar to that of STM, on both bulk and monolayer samples. The validation of CAFM as a facile and accurate tool for defect quantification provides a routine and reliable measurement that can complement other standard characterization techniques.

Atomically Resolved Defects on Thin Molybdenum Carbide (α-Mo2C) Crystals

Thin transition metal carbides (TMCs) garnered significant attention in recent years due to their attractive combination of mechanical and electrical properties with chemical and thermal stability. On the other hand, a complete picture of how defects affect the physical properties and application potential of this emerging class of materials is lacking. Here, we present an atomic-resolution study of defects on thin crystals of molybdenum carbide (α-Mo₂C) grown via chemical vapor deposition (CVD) by way of conductive atomic force microscopy (C-AFM) measurements under ambient conditions. Defects are characterized based on the type (enhancement/attenuation) and spatial extent (compact/extended) of the effect they have on the conductivity landscape of the crystal surfaces. Ab initio calculations performed by way of density functional theory (DFT) are employed to gather clues about the identity of the defects.

Charge Localization Induced by Pentagons on Ge(110)

The Ge(110) surface reconstructs into ordered and disordered phases, in which the basic unit is a five-membered ring of Ge atoms (pentagon). The variety of surface reconstructions leads to a rich electronic density of states with several surface states. Using scanning tunneling microscopy and spectroscopy, we have identified the exact origins of these surface states and linked them to either the Ge pentagons or the underlying Ge-Ge bonds. We show that even moderate fluctuations in the positions of the Ge pentagonal units induce large variations in the local density of states. The local density of states modulates in a precise manner, following the geometrical constraints on tiling Ge pentagons. These geometry-correlated electronic states offer a vast configurational landscape that could provide new opportunities in data storage and computing applications.

True Atomic-Resolution Surface Imaging and Manipulation under Ambient Conditions via Conductive Atomic Force Microscopy

A great number of chemical and mechanical phenomena, ranging from catalysis to friction, are dictated by the atomic-scale structure and properties of material surfaces. Yet, the principal tools utilized to characterize surfaces at the atomic level rely on strict environmental conditions such as ultrahigh vacuum and low temperature. Results obtained under such well-controlled, pristine conditions bear little relevance to the great majority of processes and applications that often occur under ambient conditions. Here, we report true atomic-resolution surface imaging via conductive atomic force microscopy (C-AFM) under ambient conditions, performed at high scanning speeds. Our approach delivers atomic-resolution maps on a variety of material surfaces that comprise defects including single atomic vacancies. We hypothesize that atomic resolution can be enabled by either a confined, electrically conductive pathway or an individual, atomically sharp asperity at the tip-sample contact. Using our method, we report the capability of in situ charge state manipulation of defects on MoS₂ and the observation of an exotic electronic effect: room-temperature charge ordering in a thin transition metal carbide (TMC) crystal (i.e., an MXene), α-Mo₂C. Our findings demonstrate that C-AFM can be utilized as a powerful tool for atomic-resolution imaging and manipulation of surface structure and electronics under ambient conditions, with wide-ranging applicability.

Vacancy Defects in 2D Transition Metal Dichalcogenide Electrocatalysts: From Aggregated to Atomic Configuration

Vacancy defect engineering has been well leveraged to flexibly shape comprehensive physicochemical properties of diverse catalysts. In particular, growing research effort has been devoted to engineering chalcogen anionic vacancies (S/Se/Te) of 2D transition metal dichalcogenides (2D TMDs) toward the ultimate performance limit of electrocatalytic hydrogen evolution reaction (HER). In spite of remarkable progress achieved in the past decade, systematic and in-depth insights into the state-of-the-art vacancy engineering for 2D-TMDs-based electrocatalysis are still lacking. Herein, this review delivers a full picture of vacancy engineering evolving from aggregated to atomic configurations covering their development background, controllable manufacturing, thorough characterization, and representative HER application. Of particular interest, the deep-seated correlations between specific vacancy regulation routes and resulting catalytic performance improvement are logically clarified in terms of atomic rearrangement, charge redistribution, energy band variation, intermediate adsorption-desorption optimization, and charge/mass transfer facilitation. Beyond that, a broader vision is cast into the cutting-edge research fields of vacancy-engineering-based single-atom catalysis and dynamic structure-performance correlations across catalyst service lifetime. Together with critical discussion on residual challenges and future prospects, this review sheds new light on the rational design of advanced defect catalysts and navigates their broader application in high-efficiency energy conversion and storage fields.

High performance complementary WS2 devices with hybrid Gr/Ni contacts

Two-dimensional (2D) transition metal dichalcogenides have attracted vibrant interest for future solid-state device applications due to their unique properties. However, it is challenging to realize 2D material based high performance complementary devices due to the stubborn Fermi level pinning effect and the lack of facile doping techniques. In this paper, we reported a hybrid Gr/Ni contact to WS2, which can switch carrier types from n-type to p-type in WS2. The unorthodox polarity transition is attributed to the natural p-doping of graphene with Ni adsorption and the alleviation of Fermi level pinning in WS2. Furthermore, we realized asymmetric Ni and Gr/Ni hybrid contacts to a multilayer WS2 device, and we observed synergistic p-n diode characteristics with excellent current rectification exceeding 104, and a near unity ideality factor of 1.1 (1.6) at a temperature of 4.5 K (300 K). Lastly, our WS2 p-n device exhibits high performance photovoltaic ability with a maximum photoresponsivity of 4 × 104 A W-1 at 532 nm wavelength, that is 108 times higher than that of graphene and 50 times better than that of the monolayer MoS2 photodetector. This doping-free carrier type modulation technique will pave the way to realize high performance complementary electronics and optoelectronic devices based on 2D materials.

Insights into dynamic sliding contacts from conductive atomic force microscopy

Friction in nanoscale contacts is determined by the size and structure of the interface that is hidden between the contacting bodies. One approach to investigating the origins of friction is to measure electrical conductivity as a proxy for contact size and structure. However, the relationships between contact, friction and conductivity are not fully understood, limiting the usefulness of such measurements for interpreting dynamic sliding properties. Here, atomic force microscopy (AFM) was used to simultaneously acquire lattice resolution images of the lateral force and current flow through the tip-sample contact formed between a highly oriented pyrolytic graphite (HOPG) sample and a conductive diamond AFM probe to explore the underlying mechanisms and correlations between friction and conductivity. Both current and lateral force exhibited fluctuations corresponding to the periodicity of the HOPG lattice. Unexpectedly, while lateral force increased during stick events of atomic stick-slip, the current decreased exponentially. Molecular dynamics (MD) simulations of a simple model system reproduced these trends and showed that the origin of the inverse correlation between current and lateral force during atomic stick-slip was atom-atom distance across the contact. The simulations further demonstrated transitions between crystallographic orientation during slip events were reflected in both lateral force and current. These results confirm that the correlation between conduction and atom-atom distance previously proposed for stationary contacts can be extended to sliding contacts in the stick-slip regime.

Control of the metal/WS2 contact properties using 2-dimensional buffer layers

Transition metal dichalcogenides (TMDC) have recently attracted much attention as a promising platform for the realization of 2-dimensional (2D) electronic devices. One of the major challenges for their wide-scale application is the control of the potential barrier at the metal/TMDC junction. Using conductive atomic force microscopy (c-AFM) we have investigated modifications of the Schottky barrier height (SBH) across a Pt/WS2 junction by the introduction of thin buffer layers of graphene and MoSe2. While graphene greatly reduces the contact resistance in both bias directions, thin layers of MoSe2 lower the Schottky barrier and leave the rectifying properties of the junction intact. We have studied the dependence of the transport properties on the thickness of the graphene and MoSe2 buffer layers. In both cases, the charge transport characteristics can be tailored by varying the buffer layer thickness. The edge of single layer graphene is observed to form an ohmic contact to the underlying WSe2 substrate. This study demonstrates that the introduction of atomically thin MoSe2 and graphene buffer layers is a feasible and elegant method to control the Schottky barrier when contacting TMDCs. The results are important for the fabrication of devices utilizing 2D materials.