Axion Insulator State in a Ferromagnet/Topological Insulator/Antiferromagnet Heterostructure

Growth and characterization of the magnetic topological insulator candidate Mn2Sb2Te5

We report a new member of topological insulator (TI) family i.e. Mn2Sb2Te5, which belongs to MnSb2Te4family and is a sister compound of Mn2Bi2Te5. An antiferromagnetic layer of (MnTe)2has been inserted between quintuple layers of Sb2Te3. The crystal structure and chemical composition of as grown Mn2Sb2Te5crystal is experimentally visualized by single crystal x-ray diffractometer and field emission scanning electron microscopy. The valence states of individual constituents i.e., Mn, Sb and Te are ascertained through x-ray photo electron spectroscopy. Different vibrational modes of Mn2Sb2Te5are elucidated through Raman spectroscopy. Temperature-dependent resistivityρ(T) of Mn2Sb2Te5resulted in metallic behavior of the same with an up-turn at below around 20 K. Further, the magneto-transportρ(T) vsHof the same exhibited negative magneto-resistance (MR) at low temperatures below 20 K and small positive at higher temperatures. The low Temperature -ve MR starts decreasing at higher fields. The magnetic moment as a function of temperature at 100 Oe and 1 kOe showed anti-ferromagnetism (AFM) like down turn cusps at around 20 K and 10 K. The isothermal magnetization showed AFM like loops with some embedded ferromagnetic/paramagnetic (PM) domains at 5 K and purely PM like at 100 K. The studied Mn2Sb2Te5clearly exhibited the characteristics of a magnetic TI.

Investigation of the mechanism of the anomalous Hall effects in Cr2Te3/(BiSb)2(TeSe)3 heterostructure

The interplay between ferromagnetism and the non-trivial topology has unveiled intriguing phases in the transport of charges and spins. For example, it is consistently observed the so-called topological Hall effect (THE) featuring a hump structure in the curve of the Hall resistance (R_xy) vs. a magnetic field (H) of a heterostructure consisting of a ferromagnet (FM) and a topological insulator (TI). The origin of the hump structure is still controversial between the topological Hall effect model and the multi-component anomalous Hall effect (AHE) model. In this work, we have investigated a heterostructure consisting of Bi_xSb_2-xTe_ySe_3-y (BSTS) and Cr₂Te₃ (CT), which are well-known TI and two-dimensional FM, respectively. By using the so-called "minor-loop measurement", we have found that the hump structure observed in the CT/BSTS is more likely to originate from two AHE channels. Moreover, by analyzing the scaling behavior of each amplitude of two AHE with the longitudinal resistivities of CT and BSTS, we have found that one AHE is attributed to the extrinsic contribution of CT while the other is due to the intrinsic contribution of BSTS. It implies that the proximity-induced ferromagnetic layer inside BSTS serves as a source of the intrinsic AHE, resulting in the hump structure explained by the two AHE model.

Spontaneous Ferromagnetism Induced Topological Transition in EuB_{6}

The interplay between various symmetries and electronic bands topology is one of the core issues for topological quantum materials. Spontaneous magnetism, which leads to the breaking of time-reversal symmetry, has been proven to be a powerful approach to trigger various exotic topological phases. In this Letter, utilizing the combination of angle-resolved photoemission spectroscopy, magneto-optical Kerr effect microscopy, and first-principles calculations, we present the direct evidence on the realization of the long-sought spontaneous ferromagnetism induced topological transition in soft ferromagnetic EuB_{6}. Explicitly, we reveal the topological transition is from Z_{2}=1 topological insulator in paramagnetic state to χ=1 magnetic topological semimetal in low temperature ferromagnetic state. Our results demonstrate that the simple band structure near the Fermi level and rich topological phases make EuB_{6} an ideal platform to study the topological phase physics.

Evolution of the Electronic Structure of Ultrathin MnBi2Te4 Films

Ultrathin films of intrinsic magnetic topological insulator MnBi₂Te₄ exhibit fascinating quantum properties such as the quantum anomalous Hall effect and the axion insulator state. In this work, we systematically investigate the evolution of the electronic structure of MnBi₂Te₄ thin films. With increasing film thickness, the electronic structure changes from an insulator type with a large energy gap to one with in-gap topological surface states, which is, however, still in drastic contrast to the bulk material. By surface doping of alkali-metal atoms, a Rashba split band gradually emerges and hybridizes with topological surface states, which not only reconciles the puzzling difference between the electronic structures of the bulk and thin-film MnBi₂Te₄ but also provides an interesting platform to establish Rashba ferromagnet that is attractive for (quantum) anomalous Hall effect. Our results provide important insights into the understanding and engineering of the intriguing quantum properties of MnBi₂Te₄ thin films.

Evidence of magnetism-induced topological protection in the axion insulator candidate EuSn2P2

We unravel the interplay of topological properties and the layered (anti)ferromagnetic ordering in EuSn₂P₂, using spin and chemical selective electron and X-ray spectroscopies supported by first-principle calculations. We reveal the presence of in-plane long-range ferromagnetic order triggering topological invariants and resulting in the multiple protection of topological Dirac states. We provide clear evidence that layer-dependent spin-momentum locking coexists with ferromagnetism in this material, a cohabitation that promotes EuSn₂P₂ as a prime candidate axion insulator for topological antiferromagnetic spintronics applications.

Recent Progress in Proximity Coupling of Magnetism to Topological Insulators

Inducing long-range magnetic order in 3D topological insulators can gap the Dirac-like metallic surface states, leading to exotic new phases such as the quantum anomalous Hall effect or the axion insulator state. These magnetic topological phases can host robust, dissipationless charge and spin currents or unique magnetoelectric behavior, which can be exploited in low-energy electronics and spintronics applications. Although several different strategies have been successfully implemented to realize these states, to date these phenomena have been confined to temperatures below a few Kelvin. This review focuses on one strategy: inducing magnetic order in topological insulators by proximity of magnetic materials, which has the capability for room temperature operation, unlocking the potential of magnetic topological phases for applications. The unique advantages of this strategy, the important physical mechanisms facilitating magnetic proximity effect, and the recent progress to achieve, understand, and harness proximity-coupled magnetic order in topological insulators are discussed. Some emerging new phenomena and applications enabled by proximity coupling of magnetism and topological materials, such as skyrmions and the topological Hall effect, are also highlighted, and the authors conclude with an outlook on remaining challenges and opportunities in the field.

The dimensional crossover of quantum transport properties in few-layered Bi2Se3 thin films

Topological insulator bismuth selenide (Bi₂Se₃) thin films with a thickness of 6.0 quintuple layers (QL) to 23 QL are deposited using pulsed laser deposition (PLD). The arithmetical mean deviation of the roughness (R _a) of these films is less than 0.5 nm, and the root square mean deviation of the roughness (R _q) of these films is less than 0.6 nm. Two-dimensional localization and weak antilocalization are observed in the Bi₂Se₃ thin films approaching 6.0 nm, and the origin of weak localization should be a 2D electron gas resulting from the split bulk state. Localization introduced by electron-electron interaction (EEI) is revealed by the temperature dependence of the conductivity. The enhanced contribution of three-dimensional EEI and electron-phonon interaction in the electron dephasing process is found by increasing the thickness. Considering the advantage of stoichiometric transfer in PLD, it is believed that the high quality Bi₂Se₃ thin films might provide more paths for doping and multilayered devices.