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Zhang Y, Chen Q, Qi R, Shen H, Sui F, Yang J, Bai W, Tang X, Chen X, Fu Z, Wang G, Zhang S. High Energy Storage Performance of PZO/PTO Multilayers via Interface Engineering. ACS APPLIED MATERIALS & INTERFACES 2023; 15:7157-7164. [PMID: 36705635 DOI: 10.1021/acsami.2c21202] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Antiferroelectric thin-film capacitors with ultralow remanent polarization and fast discharge speed have attracted extensive attention for energy storage applications. A multilayer heterostructure is considered to be an efficient approach to enhance the breakdown strength and improve the functionality. Here, we report a high-performance multilayer heterostructure (PbZrO3/PbTiO3)n with a maximum recoverable energy storage density of 36.4 J/cm3 due to its high electric breakdown strength (2.9 MV/cm) through the heterostructure strategy. The positive effect of interfacial blockage and the negative effect of local strain defects competitively affect the breakdown strength, showing an inflection point at n = 3. The atomic-scale characterizations reveal the underlying microstructure mechanism of the interplay between the heterointerface dislocations and the decreased energy storage performance. This work offers the potential of well-designed multilayers with high energy storage performance through heterostructure engineering.
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Affiliation(s)
- Yuanyuan Zhang
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Science, School of Physics and Electronic Science, East China Normal University, Shanghai200241, People's Republic of China
- Institute for Superconducting and Electronic Materials, Australian Institute of Innovative Materials, University of Wollongong, Wollongong2522, New South Wales, Australia
| | - Qianqian Chen
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Science, School of Physics and Electronic Science, East China Normal University, Shanghai200241, People's Republic of China
| | - Ruijuan Qi
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Science, School of Physics and Electronic Science, East China Normal University, Shanghai200241, People's Republic of China
| | - Hao Shen
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Science, School of Physics and Electronic Science, East China Normal University, Shanghai200241, People's Republic of China
| | - Fengrui Sui
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Science, School of Physics and Electronic Science, East China Normal University, Shanghai200241, People's Republic of China
| | - Jing Yang
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Science, School of Physics and Electronic Science, East China Normal University, Shanghai200241, People's Republic of China
| | - Wei Bai
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Science, School of Physics and Electronic Science, East China Normal University, Shanghai200241, People's Republic of China
| | - Xiaodong Tang
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Science, School of Physics and Electronic Science, East China Normal University, Shanghai200241, People's Republic of China
| | - Xuefeng Chen
- The Key Lab of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai200050, People's Republic of China
| | - Zhengqian Fu
- The Key Lab of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai200050, People's Republic of China
| | - Genshui Wang
- The Key Lab of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai200050, People's Republic of China
| | - Shujun Zhang
- Institute for Superconducting and Electronic Materials, Australian Institute of Innovative Materials, University of Wollongong, Wollongong2522, New South Wales, Australia
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Liao K, Shibata K, Mizoguchi T. Nanoscale Investigation of Local Thermal Expansion at SrTiO 3 Grain Boundaries by Electron Energy Loss Spectroscopy. NANO LETTERS 2021; 21:10416-10422. [PMID: 34854692 DOI: 10.1021/acs.nanolett.1c03735] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
The presence of grain boundaries (GBs) has a great impact on the coefficient of thermal expansion (CTE) of polycrystals. However, direct measurement of local expansion of GBs remains challenging for conventional methods due to the lack of spatial resolution. In this work, we utilized the valence electron energy loss spectroscopy (EELS) in a scanning transmission electron microscope (STEM) to directly measure the CTE of Σ5 and 45°GBs of SrTiO3 at a temperature range between 373 and 973 K. A CTE that was about 3 times larger was observed in Σ5 GB along the direction normal to GB plane, while only a 1.4 time enhancement was found in the 45° GB. Our result provides direct evidence that GBs contribute to the enhancement of CTE in polycrystals. Also, this work has revealed how thermodynamic properties are varied in different GB structures and demonstrated the potential of EELS for probing local thermal properties with nanometer-scale resolution.
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Affiliation(s)
- Kunyen Liao
- Institute of Industrial Science, The University of Tokyo, Tokyo 153-8505, Japan
| | - Kiyou Shibata
- Institute of Industrial Science, The University of Tokyo, Tokyo 153-8505, Japan
| | - Teruyasu Mizoguchi
- Institute of Industrial Science, The University of Tokyo, Tokyo 153-8505, Japan
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Porz L, Frömling T, Nakamura A, Li N, Maruyama R, Matsunaga K, Gao P, Simons H, Dietz C, Rohnke M, Janek J, Rödel J. Conceptual Framework for Dislocation-Modified Conductivity in Oxide Ceramics Deconvoluting Mesoscopic Structure, Core, and Space Charge Exemplified for SrTiO 3. ACS NANO 2021; 15:9355-9367. [PMID: 33169975 DOI: 10.1021/acsnano.0c04491] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The introduction of dislocations is a recently proposed strategy to tailor the functional and especially the electrical properties of ceramics. While several works confirm a clear impact of dislocations on electrical conductivity, some studies raise concern in particular when expanding to dislocation arrangements beyond a geometrically tractable bicrystal interface. Moreover, the lack of a complete classification on pertinent dislocation characteristics complicates a systematic discussion and hampers the design of dislocation-modified electrical conductivity. We proceed by mechanically introducing dislocations with three different mesoscopic structures into the model material single-crystal SrTiO3 and extensively characterizing them from both a mechanical as well as an electrical perspective. As a final result, a deconvolution of mesoscopic structure, core structure, and space charge enables us to obtain the complete picture of the effect of dislocations on functional properties, focusing here on electric properties.
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Affiliation(s)
- Lukas Porz
- Department of Materials and Earth Science, Technical University of Darmstadt, Alarich-Weiss-Straße 2, 64287 Darmstadt, Germany
| | - Till Frömling
- Department of Materials and Earth Science, Technical University of Darmstadt, Alarich-Weiss-Straße 2, 64287 Darmstadt, Germany
| | - Atsutomo Nakamura
- Department of Materials Physics, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
- PRESTO, Japan Science and Technology Agency (JST), 7, Gobancho, Chiyoda-ku, Tokyo 102-0076, Japan
| | - Ning Li
- School of Physics, Peking University, Haidian District, Beijing 100871, China
| | - Ryohei Maruyama
- Department of Materials Physics, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
| | - Katsuyuki Matsunaga
- Department of Materials Physics, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
| | - Peng Gao
- School of Physics, Peking University, Haidian District, Beijing 100871, China
| | - Hugh Simons
- Department of Physics, Technical University of Denmark, 2800 Kongens Lyngby, Denmark
| | - Christian Dietz
- Department of Materials and Earth Science, Technical University of Darmstadt, Alarich-Weiss-Straße 2, 64287 Darmstadt, Germany
| | - Marcus Rohnke
- Institute of Physical Chemistry and Center for Materials Research, Justus Liebig University Gießen, Heinrich-Buff-Ring 17, 35392 Giessen, Germany
| | - Jürgen Janek
- Institute of Physical Chemistry and Center for Materials Research, Justus Liebig University Gießen, Heinrich-Buff-Ring 17, 35392 Giessen, Germany
| | - Jürgen Rödel
- Department of Materials and Earth Science, Technical University of Darmstadt, Alarich-Weiss-Straße 2, 64287 Darmstadt, Germany
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Armstrong MD, Lan KW, Guo Y, Perry NH. Dislocation-Mediated Conductivity in Oxides: Progress, Challenges, and Opportunities. ACS NANO 2021; 15:9211-9221. [PMID: 34041913 DOI: 10.1021/acsnano.1c01557] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Dislocations in ionic solids are topological extended defects that modulate composition, strain, and charge over multiple length scales. As such, they provide an extra degree of freedom to tailor ionic and electronic transport beyond limits inherent in bulk doping. Heterogeneity of transport paths as well as the ability to dynamically reconfigure structure and properties through multiple stimuli lend dislocations to particular potential applications including memory, switching, non-Ohmic electronics, capacitive charge storage, and single-atom catalysis. However, isolating, understanding, and predicting causes of modified transport behavior remain a challenge. In this Perspective, we first review existing reports of dislocation-modified transport behavior in oxides, as well as synthetic strategies and multiscale characterization routes to uncover processing-structure-property relationships. We outline a vision for future research, suggesting outstanding questions, tasks, and opportunities. Advances in this field will require highly interdisciplinary, convergent computational-experimental approaches, covering orders of magnitude in length scale, and spanning fields from microscopy and machine learning to electro-chemo-mechanics and point defect chemistry to transport-by-design and advanced manufacturing.
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Affiliation(s)
- Micah D Armstrong
- Department of Materials Science & Engineering and Materials Research Laboratory, University of Illinois at Urbana-Champaign, 104 S. Goodwin Ave., Urbana, Illinois 61801, United States
| | - Kai-Wei Lan
- Department of Materials Science & Engineering and Materials Research Laboratory, University of Illinois at Urbana-Champaign, 104 S. Goodwin Ave., Urbana, Illinois 61801, United States
| | - Yiwen Guo
- Department of Materials Science & Engineering and Materials Research Laboratory, University of Illinois at Urbana-Champaign, 104 S. Goodwin Ave., Urbana, Illinois 61801, United States
| | - Nicola H Perry
- Department of Materials Science & Engineering and Materials Research Laboratory, University of Illinois at Urbana-Champaign, 104 S. Goodwin Ave., Urbana, Illinois 61801, United States
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Xie H, Huang Q, Bai J, Li S, Liu Y, Feng J, Yang Y, Pan H, Li H, Ren Y, Qin G. Nonsymmetrical Segregation of Solutes in Periodic Misfit Dislocations Separated Tilt Grain Boundaries. NANO LETTERS 2021; 21:2870-2875. [PMID: 33755476 DOI: 10.1021/acs.nanolett.0c05008] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Interfacial segregation is ubiquitous in mulit-component polycrystalline materials and plays a decisive role in material properties. So far, the discovered solute segregation patterns at special high-symmetry interfaces are usually located at the boundary lines or are distributed symmetrically at the boundaries. Here, in a model Mg-Nd-Mn alloy, we confirm that elastic strain minimization facilitated nonsymmetrical segregation of solutes in four types of linear tilt grain boundaries (TGBs) to generate ordered interfacial superstructures. Aberration-corrected high-angle annular dark-field scanning transmission electron microscopy observations indicate that the solutes selectively segregate at substitutional sites at the linear TGBs separated by periodic misfit dislocations to form such two-dimensional planar structures. These findings are totally different from the classical McLean-type segregation which has assumed the monolayer or submonolayer coverage of a grain boundary and refresh understanding on strain-driven interface segregation behaviors.
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Affiliation(s)
- Hongbo Xie
- Key Laboratory for Anisotropy and Texture of Materials (Ministry of Education), School of Materials Science and Engineering, Northeastern University, Shenyang 110819, China
| | - Qiuyan Huang
- Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
| | - Junyuan Bai
- Key Laboratory for Anisotropy and Texture of Materials (Ministry of Education), School of Materials Science and Engineering, Northeastern University, Shenyang 110819, China
| | - Shanshan Li
- Key Laboratory for Anisotropy and Texture of Materials (Ministry of Education), School of Materials Science and Engineering, Northeastern University, Shenyang 110819, China
| | - Yang Liu
- Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
| | - Jianguang Feng
- Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
| | - Yuansheng Yang
- Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
| | - Hucheng Pan
- Key Laboratory for Anisotropy and Texture of Materials (Ministry of Education), School of Materials Science and Engineering, Northeastern University, Shenyang 110819, China
| | - Hongxiao Li
- State Key Laboratory of Rolling and Automation, Northeastern University, Shenyang 110819, China
| | - Yuping Ren
- State Key Laboratory of Rolling and Automation, Northeastern University, Shenyang 110819, China
- Research Center for Metal Wires, Northeastern University, Shenyang 110819, China
| | - Gaowu Qin
- State Key Laboratory of Rolling and Automation, Northeastern University, Shenyang 110819, China
- Research Center for Metal Wires, Northeastern University, Shenyang 110819, China
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Bridging the Gap between Bulk Compression and Indentation Test on Room-Temperature Plasticity in Oxides: Case Study on SrTiO3. CRYSTALS 2020. [DOI: 10.3390/cryst10100933] [Citation(s) in RCA: 15] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
Abstract
Dislocation-based functionalities in inorganic ceramics and semiconductors are drawing increasing attention, contrasting the conventional belief that the majority of ceramic materials are brittle at room temperature. Understanding the dislocation behavior in ceramics and advanced semiconducting materials is therefore critical for the mechanical reliability of such materials and devices designed for harvesting the dislocation-based functionalities. Here we compare the mechanical testing between indentation at nano-/microscale and bulk uniaxial deformation at macroscale and highlight the dislocation plasticity in single crystal SrTiO3, a model perovskite. The similarities and differences as well as the advantages and limitations of both testing protocols are discussed based on the experimental outcome of the crystal plasticity, with a focus on the pre-existing defect population being probed with different volumes across the length scales (“size effect”). We expect this work to pave the road for studying dislocation-based plasticity in various advanced functional ceramics and semiconductors.
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Xu Z, Hou D, Kautz DJ, Liu W, Xu R, Xiao X, Lin F. Charging Reactions Promoted by Geometrically Necessary Dislocations in Battery Materials Revealed by In Situ Single-Particle Synchrotron Measurements. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e2003417. [PMID: 32761698 DOI: 10.1002/adma.202003417] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/18/2020] [Revised: 06/27/2020] [Indexed: 06/11/2023]
Abstract
Crystallographic defects exist in many redox active energy materials, e.g., battery and catalyst materials, which significantly alter their chemical properties for energy storage and conversion. However, there is lack of quantitative understanding of the interrelationship between crystallographic defects and redox reactions. Herein, crystallographic defects, such as geometrically necessary dislocations, are reported to influence the redox reactions in battery particles through single-particle, multimodal, and in situ synchrotron measurements. Through Laue X-ray microdiffraction, many crystallographic defects are spatially identified and statistically quantified from a large quantity of diffraction patterns in many layered oxide particles, including geometrically necessary dislocations, tilt boundaries, and mixed defects. The in situ and ex situ measurements, combining microdiffraction and X-ray spectroscopy imaging, reveal that LiCoO2 particles with a higher concentration of geometrically necessary dislocations provide deeper charging reactions, indicating that dislocations may facilitate redox reactions in layered oxides during initial charging. The present study illustrates that a precise control of crystallographic defects and their distribution can potentially promote and homogenize redox reactions in battery materials.
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Affiliation(s)
- Zhengrui Xu
- Department of Chemistry, Virginia Tech, Blacksburg, VA, 24061, USA
| | - Dong Hou
- Department of Chemistry, Virginia Tech, Blacksburg, VA, 24061, USA
| | - David J Kautz
- Department of Chemistry, Virginia Tech, Blacksburg, VA, 24061, USA
| | - Wenjun Liu
- Advanced Photon Source, Argonne National Laboratory, Argonne, IL, 60439, USA
| | - Ruqing Xu
- Advanced Photon Source, Argonne National Laboratory, Argonne, IL, 60439, USA
| | - Xianghui Xiao
- National Synchrotron Light Source II, Brookhaven National Laboratory, Upton, NY, 11973, USA
| | - Feng Lin
- Department of Chemistry, Virginia Tech, Blacksburg, VA, 24061, USA
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Biganeh A, Kakuee O, Rafi-Kheiri H. Positron Annihilation Spectroscopy of KCl (Zn) crystals. Appl Radiat Isot 2020; 166:109330. [PMID: 32795699 DOI: 10.1016/j.apradiso.2020.109330] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/10/2020] [Revised: 06/24/2020] [Accepted: 07/07/2020] [Indexed: 11/17/2022]
Abstract
Four samples of nominally pure KCl crystals and doped with Zn2+ impurities are grown by the Czochralski method and characterized by X-ray diffraction and Proton Induced X-ray Emission techniques. Positron Annihilation Lifetime Spectroscopy (PALS) is performed to obtain information on the cation vacancy type defects and their evolution under doping. The results of the PALS experiment indicate that doping KCl by Zn2+ ions, at first increases the concentration of mono vacancies and in the second stage leads the creation of divacancy sites. Coincidence Doppler Broadening Spectroscopy (CDBS) is carried out to obtain the chemical environment of positron annihilation sites. The results of CDBS show that cation vacancies have a significant role in the annihilation process. An interesting observation is the participation of Zn2+ cations in the positron annihilation process which confirms that positrons are not completely localized on the anion sites. The internal consistency between the results of PALS and CDBS experiments is also clarified.
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Affiliation(s)
- A Biganeh
- Physics and Accelerators Research School, Nuclear Science and Technology Research Institute, P.O. Box 14395-836, Tehran, Iran
| | - O Kakuee
- Physics and Accelerators Research School, Nuclear Science and Technology Research Institute, P.O. Box 14395-836, Tehran, Iran.
| | - H Rafi-Kheiri
- Physics and Accelerators Research School, Nuclear Science and Technology Research Institute, P.O. Box 14395-836, Tehran, Iran
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Avram D, Colbea C, Florea M, Lazar S, Stroppa D, Tiseanu C. Imaging dopant distribution across complete phase transformation by TEM and upconversion emission. NANOSCALE 2019; 11:16743-16754. [PMID: 31403145 DOI: 10.1039/c9nr04345d] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/07/2023]
Abstract
Correlating dopant distribution to its optical response represents a complex challenge for nanomaterials science. Differentiating the "true" clustering nature from dopant pairs formed in statistical distribution complicates even more the elucidation of doping-functionality relationship. The present study associates lanthanide dopant distribution, including all significant events (enrichment, depletion and surface segregation), to its optical response in upconversion (UPC) at the ensemble and single-nanoparticle level. A small deviation from the Er nominal concentration of a few percent is able to induce clear differences in Er UPC emission color, intensity, excited-state dynamics and ultimately, UPC mechanisms, across tetragonal to monoclinic phase transformation in rationally designed Er doped ZrO2 nanoparticles. Rare evidence of a heterogeneous dopant distribution leading to the coexistence of two polymorphs in a single nanoparticle is revealed by Z- and phase contrast transmission electron microscopy (TEM). Despite their spatial proximity, Er in the two polymorphs are spectroscopically isolated, i.e. they do not communicate by energy transfer. Segregated Er, which is well imaged in TEM, is absent in UPC, while the minor phase content overlooked by X-ray diffraction and TEM is revealed by UPC. The outstanding sensitivity of combined TEM and UPC emission to subtle deviations from uniform doping in the diluted concentration regime renders such an approach relevant for various functional oxides supporting lanthanide dopants as emitters.
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Affiliation(s)
- Daniel Avram
- National Institute for Laser, Plasma and Radiation Physics, P.O. Box MG-36, RO 76900, Bucharest-Magurele, Romania.
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