Carrier Recombination in the Base, Interior, and Surface of InAs/InAlAs Core-Shell Nanowires Grown on Silicon

Spatioselective Growth on Homogenous Semiconductor Substrates by Surface State Modulation

Nanofabrication schemes usually suffer challenges in direct growth on complex nanostructured substrates. We provide a new technology that allows for the convenient, selective growth of complex nanostructures directly on three-dimensional (3D) homogeneous semiconductor substrates. The nature of the selectivity is derived from surface states modulated electrochemical deposition. Metals, metal oxides, and compound semiconductor structures can be prepared with high fidelity over a wide scale range from tens of nanometers to hundreds of microns. The utility of the process for photoelectrochemical applications is demonstrated by selectively decorating the sidewalls and tips of silicon microwires with cuprous oxide and cobalt oxides catalysts, respectively. Our findings indicate a new selective fabrication concept applied for homogeneous 3D semiconductor substrates, which is of high promise in community of photoelectronics, photoelectrochemistry, photonics, microelectronics, etc.

Measuring, controlling and exploiting heterogeneity in optoelectronic nanowires

Fabricated from ZnO, III-N, chalcogenide-based, III-V, hybrid perovskite or other materials, semiconductor nanowires offer single-element and array functionality as photovoltaic, non-linear, electroluminescent and lasing components. In many applications their advantageous properties emerge from their geometry; a high surface-to-volume ratio for facile access to carriers, wavelength-scale dimensions for waveguiding or a small nanowire-substrate footprint enabling heterogeneous growth. However, inhomogeneity during bottom-up growth is ubiquitous and can impact morphology, geometry, crystal structure, defect density, heterostructure dimensions and ultimately functional performance. In this topical review, we discuss the origin and impact of heterogeneity within and between optoelectronic nanowires, and introduce methods to assess, optimise and ultimately exploit wire-to-wire disorder.