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Li T, Deng S, Liu H, Chen J. Insights into Strain Engineering: From Ferroelectrics to Related Functional Materials and Beyond. Chem Rev 2024; 124:7045-7105. [PMID: 38754042 DOI: 10.1021/acs.chemrev.3c00767] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/18/2024]
Abstract
Ferroelectrics have become indispensable components in various application fields, including information processing, energy harvesting, and electromechanical conversion, owing to their unique ability to exhibit electrically or mechanically switchable polarization. The distinct polar noncentrosymmetric lattices of ferroelectrics make them highly responsive to specific crystal structures. Even slight changes in the lattice can alter the polarization configuration and response to external fields. In this regard, strain engineering has emerged as a prevalent regulation approach that not only offers a versatile platform for structural and performance optimization within ferroelectrics but also unlocks boundless potential in various functional materials. In this review, we systematically summarize the breakthroughs in ferroelectric-based functional materials achieved through strain engineering and progress in method development. We cover research activities ranging from fundamental attributes to wide-ranging applications and novel functionalities ranging from electromechanical transformation in sensors and actuators to tunable dielectric materials and information technologies, such as transistors and nonvolatile memories. Building upon these achievements, we also explore the endeavors to uncover the unprecedented properties through strain engineering in related chemical functionalities, such as ferromagnetism, multiferroicity, and photoelectricity. Finally, through discussions on the prospects and challenges associated with strain engineering in the materials, this review aims to stimulate the development of new methods for strain regulation and performance boosting in functional materials, transcending the boundaries of ferroelectrics.
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Affiliation(s)
- Tianyu Li
- Department of Physical Chemistry, University of Science and Technology Beijing, Beijing 100083, China
- Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Shiqing Deng
- Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Hui Liu
- Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Jun Chen
- Department of Physical Chemistry, University of Science and Technology Beijing, Beijing 100083, China
- Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, China
- Hainan University, Haikou 570228, China
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2
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Du C, Guzman F, Yang H, Waqar M, Pan X. Observation of Polarization Enhancement at BiFeO3/ La0.7Sr0.3MnO3 Interface. MICROSCOPY AND MICROANALYSIS : THE OFFICIAL JOURNAL OF MICROSCOPY SOCIETY OF AMERICA, MICROBEAM ANALYSIS SOCIETY, MICROSCOPICAL SOCIETY OF CANADA 2023; 29:1651-1652. [PMID: 37613912 DOI: 10.1093/micmic/ozad067.850] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/25/2023]
Affiliation(s)
- Chaojie Du
- Department of Materials Science and Engineering, University of California-Irvine, Irvine, CA, United States
| | - Francisco Guzman
- Department of Materials Science and Engineering, University of California-Irvine, Irvine, CA, United States
| | - Hongbin Yang
- Department of Materials Science and Engineering, University of California-Irvine, Irvine, CA, United States
| | - Moaz Waqar
- Department of Materials Science and Engineering, University of California-Irvine, Irvine, CA, United States
| | - Xiaoqing Pan
- Department of Materials Science and Engineering, University of California-Irvine, Irvine, CA, United States
- Irvine Materials Research Institute, University of California-Irvine, Irvine, CA, United States
- Department of Physics and Astronomy, University of California-Irvine, Irvine, CA, United States
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3
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Gong FH, Chen YT, Zhu YL, Tang YL, Zhang H, Wang YJ, Wu B, Liu JQ, Shi TT, Yang LX, Li CJ, Feng YP, Ma XL. Thickness-Dependent Polar Domain Evolution in Strained, Ultrathin PbTiO 3 Films. ACS APPLIED MATERIALS & INTERFACES 2022; 14:9724-9733. [PMID: 35138804 DOI: 10.1021/acsami.1c20797] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Ferroelectric ultrathin films have great potential in electronic devices and device miniaturization with the innovation of technology. In the process of product commercialization, understanding the domain evolution and topological properties of ferroelectrics is a prerequisite for high-density storage devices. In this work, a series of ultrathin PbTiO3 (PTO) films with varying thicknesses were deposited on cubic KTaO3 substrates by pulsed laser deposition and were researched by Cs-corrected scanning transmission electron microscopy (STEM), reciprocal space mapping (RSM), and piezoresponse force microscopy (PFM). RSM experiments indicate the existence of a/c domains and show that the lattice constant varies continuously, which is further confirmed by atomic-scale STEM imaging. Diffraction contrast analysis clarifies that with the decrease in PTO film thickness, the critical thickness for the formation of a/c domains could be missing. When the thickness of PTO films is less than 6 nm, the domain configurations in the ultrathin PTO films are the coexistence of a/c domains and bowl-like topological structures, where the latter ones were identified as convergent and divergent types of meron. In addition, abundant 90° charged domain walls in these ultrathin PTO films were identified. PFM studies reveal clear ferroelectric properties for these ultrathin PTO films. These results may shed light on further understanding the domain evolution and topological properties in ultrathin ferroelectric PTO films.
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Affiliation(s)
- Feng-Hui Gong
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang 110016, China
- School of Materials Science and Engineering, University of Science and Technology of China, Wenhua Road 72, Shenyang 110016, China
| | - Yu-Ting Chen
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang 110016, China
- School of Materials Science and Engineering, University of Science and Technology of China, Wenhua Road 72, Shenyang 110016, China
| | - Yin-Lian Zhu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang 110016, China
- Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan 523808, Guangdong, China
| | - Yun-Long Tang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang 110016, China
| | - Heng Zhang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang 110016, China
- School of Materials Science and Engineering, University of Science and Technology of China, Wenhua Road 72, Shenyang 110016, China
| | - Yu-Jia Wang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang 110016, China
| | - Bo Wu
- Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan 523808, Guangdong, China
| | - Jia-Qi Liu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang 110016, China
- School of Materials Science and Engineering, University of Science and Technology of China, Wenhua Road 72, Shenyang 110016, China
| | - Tong-Tong Shi
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang 110016, China
- School of Materials Science and Engineering, University of Science and Technology of China, Wenhua Road 72, Shenyang 110016, China
| | - Li-Xin Yang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang 110016, China
| | - Chang-Ji Li
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang 110016, China
| | - Yan-Peng Feng
- Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan 523808, Guangdong, China
| | - Xiu-Liang Ma
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang 110016, China
- State Key Lab of Advanced Processing and Recycling on Non-ferrous Metals, Lanzhou University of Technology, Langongping Road 287, Lanzhou 730050, China
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Geng W, Wang Y, Tang Y, Zhu Y, Wu B, Yang L, Feng Y, Zou M, Ma X. Atomic-Scale Tunable Flexoelectric Couplings in Oxide Multiferroics. NANO LETTERS 2021; 21:9601-9608. [PMID: 34766784 DOI: 10.1021/acs.nanolett.1c03352] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Flexoelectricity is an effective tool in modulating the crystallographic structures and properties of oxides for multifunctional applications. However, engineering the nonuniform strain to obtain tunable flexoelectric behaviors at the atomic scale remains an ongoing challenge in conventional substrate-imposed ferroelectric films. Here, the regulatable flexoelectric behaviors are demonstrated at atomic scale in [110]-oriented BiFeO3 thin films, which are triggered by the strain-field coupling of high-density interfacial dislocations. Using aberration-corrected scanning transmission electron microscopy, the asymmetric polarization rotation around the single dislocation is revealed, which is induced by the gradient strain fields of the single dislocation. These strain fields are highly correlated to generate huge strain gradients between neighboring dislocations, and thereby, serial flexoelectric responses are engineered as a function of dislocation spacings in thicker BiFeO3 films. This work opens a pathway for the modulation of flexoelectric responses in ferroelectrics, which could be extended to other functional materials to create exotic phenomena.
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Affiliation(s)
- Wanrong Geng
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Yujia Wang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, 110016 Shenyang, China
| | - Yunlong Tang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, 110016 Shenyang, China
| | - Yinlian Zhu
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, 110016 Shenyang, China
| | - Bo Wu
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Lixin Yang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, 110016 Shenyang, China
| | - Yanpeng Feng
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Minjie Zou
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Xiuliang Ma
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, 110016 Shenyang, China
- State Key Lab of Advanced Processing and Recycling on Non-ferrous Metals, Lanzhou University of Technology, Langongping Road 287, 730050 Lanzhou, China
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Wang J, Yang H, Wang Y, Fan Y, Liu D, Yang Y, Wu J, Chen M, Gao R, Huang H, Wang X, Hong J, Ma J, Zhang J, Nan CW. Polarization-switching pathway determined electrical transport behaviors in rhombohedral BiFeO 3 thin films. NANOSCALE 2021; 13:17746-17753. [PMID: 34668905 DOI: 10.1039/d1nr03993h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
We investigated the polarization-switching pathway-dependent electrical transport behaviors in rhombohedral-phase BiFeO3 thin films with point contact geometry. By combining conducting-atomic force microscopy and piezoelectric force microscopy, we simultaneously obtained current-voltage curves and the corresponding domain patterns before and after the polarization switching. The results indicate that for the (001)-oriented film, the abrupt current (due to polarization reversing) increases with the enhanced switching voltage for 109° and 180° switching events. More importantly, the abrupt current can be further improved in (110)- and (111)-oriented thin films, which benefits from the stronger modulation of the interfacial Schottky barrier by the enhanced out-of-plane polarization magnitude. The current on-off ratio obtained in a ∼20 nm thick (111)-oriented BiFeO3 thin film at a readout voltage of ∼3 V exceeds (∼6 × 105)%, which is close to the result from a previous report on ultrathin tetragonal BiFeO3 thin films.
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Affiliation(s)
- Jing Wang
- Advanced Research Institute of Multidisciplinary Science, and School of Materials Science & Engineering, Beijing Institute of Technology, Haidian District, Beijing 100081, China.
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, People's Republic of China
| | - Huayu Yang
- Advanced Research Institute of Multidisciplinary Science, and School of Materials Science & Engineering, Beijing Institute of Technology, Haidian District, Beijing 100081, China.
| | - Yue Wang
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, People's Republic of China
| | - Yuanyuan Fan
- Advanced Research Institute of Multidisciplinary Science, and School of Materials Science & Engineering, Beijing Institute of Technology, Haidian District, Beijing 100081, China.
| | - Di Liu
- Advanced Research Institute of Multidisciplinary Science, and School of Materials Science & Engineering, Beijing Institute of Technology, Haidian District, Beijing 100081, China.
| | - Yuben Yang
- Department of Physics, Beijing Normal University, 100875 Beijing, China
| | - Jialu Wu
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, People's Republic of China
| | - Mingfeng Chen
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, People's Republic of China
| | - Rongzhen Gao
- Advanced Research Institute of Multidisciplinary Science, and School of Materials Science & Engineering, Beijing Institute of Technology, Haidian District, Beijing 100081, China.
| | - Houbing Huang
- Advanced Research Institute of Multidisciplinary Science, and School of Materials Science & Engineering, Beijing Institute of Technology, Haidian District, Beijing 100081, China.
| | - Xueyun Wang
- School of Aerospace Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Jiawang Hong
- School of Aerospace Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Jing Ma
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, People's Republic of China
| | - Jinxing Zhang
- Department of Physics, Beijing Normal University, 100875 Beijing, China
| | - Ce-Wen Nan
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, People's Republic of China
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Sun Y, Yang J, Li S, Wang D. Defect engineering in perovskite oxide thin films. Chem Commun (Camb) 2021; 57:8402-8420. [PMID: 34351323 DOI: 10.1039/d1cc02276h] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Perovskite oxide thin films are a category of multifunctional materials that have intriguing electrical, magnetic, and photovoltaic properties that can be harnessed combinatorially in future microelectronic devices. However, the inevitable existence of defects in perovskites, regardless of the materials' processing conditions, plays a significant role in their functional properties, which could be either detrimental or beneficial, depending on the exact chemical nature of these defects. As such, defect engineering is an important research area in perovskite thin films that aims at understanding the chemical nature of the defects, from which the physical properties of materials can be more precisely manipulated. Here, we review the common defects in perovskite oxide thin films, which include point defects, dopants, domains and domain walls. The factors that impact the appearance and existence of defects and the corresponding mechanisms are also discussed. While summarizing our previous work, the state-of-the-art in the field from other groups has also been discussed. Most of the defects exist as defect dipoles that affect the oxidation states of relevant ions and induce anomalous behaviors, such as ferroelectricity in otherwise non-ferroelectric thin films, as well as enhanced electrical conductivity in insulators. Furthermore, the couplings between defect dipoles and other degrees of freedom including epitaxial strains and interfaces also provide new strategies to modulate the functional properties of perovskite thin films. Particularly, the coupling between defects and domain wall motion can be regarded as a universal tool to modulate the electric and magnetic properties of thin films of perovskite oxides. It is our hope that this review could promote defect engineering as a general regulation strategy to embellish the functional properties of perovskite oxide thin films.
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Affiliation(s)
- Yunlong Sun
- UNSW Materials and Manufacturing Futures Institute, School of Materials Science and Engineering, The University of New South Wales, Sydney, NSW 2052, Australia.
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Xu K, Gu Y, Song C, Zhong X, Zhu J. Atomic insight into spin, charge and lattice modulations at SrFeO 3-x/SrTiO 3 interfaces. NANOSCALE 2021; 13:6066-6075. [PMID: 33616142 DOI: 10.1039/d0nr07697j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Novel phenomena and functionalities at interfaces of oxide heterostructures are currently of great interest in a wide range of applications. At such interfaces, charge, spin, orbital and lattice ordering coexist and correlate closely, contributing to rich functional responses. By using atomically resolved imaging and spectroscopy techniques, we investigated magnetic behaviors and structural modulation at the SrFeO3-x/SrTiO3 interface. Fe/Ti element intermixing and oxygen vacancies occurred across a few unit cells at the interface. Furthermore, antiferromagnetic spin ordering of Fe with different valence states in the interface of SrFeO3-x/SrTiO3 induced uncompensated magnetic moments. Compared to the SrFeO3-x/La0.3Sr0.7Al0.65Ta0.35O3 heterojunction, the variations of charge and lattice order parameters at the SrFeO3-x/SrTiO3 interfaces were also determined by advanced electron microscopy, which provided a good understanding of the physical origin of disparate macroscopic magnetic properties, further investigated by magnetometer measurements and X-ray magnetic circular dichroism (XMCD) spectra. These studies provide comprehensive insight into the interfacial modulation of ferrite oxide, which may be useful for designing future devices in oxide electronics.
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Affiliation(s)
- Kun Xu
- National Center for Electron Microscopy in Beijing, Key Laboratory of Advanced Materials (MOE), The State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, People's Republic of China.
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Zhang Y, Si W, Yu R, Zhu J. Polyhedron and Charge Ordering in Interfacial Reconstruction of a Hexagonal Ferrite/Sapphire Heterostructure. ACS APPLIED MATERIALS & INTERFACES 2021; 13:11489-11496. [PMID: 33593061 DOI: 10.1021/acsami.0c22078] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Interfacial reconstruction, emanating from the symmetry breaking at the interface, plays a key role in modulating the microstructures and properties of heterostructures. The appeal of revealing such a reconstruction resides in the underlying mechanism connected to the function of heterostructures and new insights into designing a new interface device. Here, we demonstrate an interfacial reconstruction in a large lattice-mismatch system, h-LuFeO3/α-Al2O3 heterostructure. Combining the atomic-resolution imaging and spectroscopy of scanning transmission electron microscopy, the periodic variation of FeO immediate coordination and charge ordering of iron are revealed, indicating a strong lattice-charge coupling in the reconstruction. Such a reconstruction reported here suggests that polyhedral and electronic flexibility is important for the reconstruction formation and presents possibilities for further construction of more functional heterostructures.
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Affiliation(s)
- Yang Zhang
- National Center for Electron Microscopy in Beijing, School of Materials Science and Engineering, The State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials (MOE), Tsinghua University, Beijing 100084, P.R. China
| | - Wenlong Si
- National Center for Electron Microscopy in Beijing, School of Materials Science and Engineering, The State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials (MOE), Tsinghua University, Beijing 100084, P.R. China
| | - Rong Yu
- National Center for Electron Microscopy in Beijing, School of Materials Science and Engineering, The State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials (MOE), Tsinghua University, Beijing 100084, P.R. China
| | - Jing Zhu
- National Center for Electron Microscopy in Beijing, School of Materials Science and Engineering, The State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials (MOE), Tsinghua University, Beijing 100084, P.R. China
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In-situ monitoring of interface proximity effects in ultrathin ferroelectrics. Nat Commun 2020; 11:5815. [PMID: 33199714 PMCID: PMC7669862 DOI: 10.1038/s41467-020-19635-7] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/18/2020] [Accepted: 10/25/2020] [Indexed: 01/28/2023] Open
Abstract
The development of energy-efficient nanoelectronics based on ferroelectrics is hampered by a notorious polarization loss in the ultrathin regime caused by the unscreened polar discontinuity at the interfaces. So far, engineering charge screening at either the bottom or the top interface has been used to optimize the polarization state. Yet, it is expected that the combined effect of both interfaces determines the final polarization state; in fact the more so the thinner a film is. The competition and cooperation between interfaces have, however, remained unexplored so far. Taking PbTiO3 as a model system, we observe drastic differences between the influence of a single interface and the competition and cooperation of two interfaces. We investigate the impact of these configurations on the PbTiO3 polarization when the interfaces are in close proximity, during thin-film synthesis in the ultrathin limit. By tailoring the interface chemistry towards a cooperative configuration, we stabilize a robust polarization state with giant polarization enhancement. Interface cooperation hence constitutes a powerful route for engineering the polarization in thin-film ferroelectrics towards improved integrability for oxide electronics in reduced dimension. How to maintain a robust polarization in ferroelectrics despite its inherent suppression when going to the thin-film limit is a long-standing issue. Here, the authors propose the concept of competitive and cooperative interfaces and establish robust polarization states in the ultrathin regime.
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Zhang Y, Wang W, Xing W, Cheng S, Deng S, Angst M, Yu CP, Lan F, Cheng Z, Mandrus D, Sales B, Shen J, Zhong X, Tai NH, Yu R, Zhu J. Effect of Oxygen Interstitial Ordering on Multiple Order Parameters in Rare Earth Ferrite. PHYSICAL REVIEW LETTERS 2019; 123:247601. [PMID: 31922871 DOI: 10.1103/physrevlett.123.247601] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/17/2019] [Revised: 09/09/2019] [Indexed: 06/10/2023]
Abstract
Oxygen interstitials and vacancies play a key role in modulating the microstructure and properties of nonstoichiometric oxide systems, such as those used for superconductors and multiferroics. Key to understanding the tuning mechanisms resulting from oxygen doping is a knowledge of the precise positions of these lattice defects, and of the interaction both between these defects and with many order parameters. Here, we report how such information can, for the first time, be obtained from a sample of LuFe_{2}O_{4.22} using a range of techniques including advanced electron microscopy, atomic-resolution spectroscopy, and density functional theory calculations. The results provide quantitative atomic details of the crystal unit cell, together with a description of the ferroelastic, ferroelectric, and ferromagnetic order parameters. We elucidate also the interaction between these order parameters and the positions of the oxygen interstitials in the oxygen-enriched sample. The comprehensive analysis of oxygen interstitial ordering provides insights into understanding the coupling among different degrees of freedom in rare earth ferrites and demonstrates that oxygen content regulation is a powerful tool for tuning the microstructure and properties for this class of quantum material.
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Affiliation(s)
- Yang Zhang
- National Center for Electron Microscopy in Beijing, Key Laboratory of Advanced Materials (MOE), The State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, People's Republic of China
| | - Wenbin Wang
- Institute of Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
| | - Wandong Xing
- National Center for Electron Microscopy in Beijing, Key Laboratory of Advanced Materials (MOE), The State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, People's Republic of China
| | - Shaobo Cheng
- National Center for Electron Microscopy in Beijing, Key Laboratory of Advanced Materials (MOE), The State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, People's Republic of China
| | - Shiqing Deng
- National Center for Electron Microscopy in Beijing, Key Laboratory of Advanced Materials (MOE), The State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, People's Republic of China
| | - Manuel Angst
- Jülich Centre for Neutron Science JCNS and Peter Grünberg Institut PGI, JARA-FIT, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany
| | - Chu-Ping Yu
- National Center for Electron Microscopy in Beijing, Key Laboratory of Advanced Materials (MOE), The State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, People's Republic of China
- Department of Materials Science and Engineering National Tsing-Hua University, Hsinchu 30013, Taiwan
| | - Fanli Lan
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
| | - Zhiying Cheng
- National Center for Electron Microscopy in Beijing, Key Laboratory of Advanced Materials (MOE), The State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, People's Republic of China
| | - David Mandrus
- Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA
| | - Brian Sales
- Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA
| | - Jian Shen
- Institute of Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
| | - Xiaoyan Zhong
- National Center for Electron Microscopy in Beijing, Key Laboratory of Advanced Materials (MOE), The State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, People's Republic of China
| | - Nyan-Hwa Tai
- Department of Materials Science and Engineering National Tsing-Hua University, Hsinchu 30013, Taiwan
| | - Rong Yu
- National Center for Electron Microscopy in Beijing, Key Laboratory of Advanced Materials (MOE), The State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, People's Republic of China
| | - Jing Zhu
- National Center for Electron Microscopy in Beijing, Key Laboratory of Advanced Materials (MOE), The State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, People's Republic of China
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