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Cong X, Yin H, Zheng Y, He W. Recent progress of group III-V materials-based nanostructures for photodetection. NANOTECHNOLOGY 2024; 35:382002. [PMID: 38759630 DOI: 10.1088/1361-6528/ad4cf0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/06/2023] [Accepted: 05/17/2024] [Indexed: 05/19/2024]
Abstract
Due to the suitable bandgap structure, efficient conversion rates of photon to electron, adjustable optical bandgap, high electron mobility/aspect ratio, low defects, and outstanding optical and electrical properties for device design, III-V semiconductors have shown excellent properties for optoelectronic applications, including photodiodes, photodetectors, solar cells, photocatalysis, etc. In particular, III-V nanostructures have attracted considerable interest as a promising photodetector platform, where high-performance photodetectors can be achieved based on the geometry-related light absorption and carrier transport properties of III-V materials. However, the detection ranges from Ultraviolet to Terahertz including broadband photodetectors of III-V semiconductors still have not been more broadly development despite significant efforts to obtain the high performance of III-V semiconductors. Therefore, the recent development of III-V photodetectors in a broad detection range from Ultraviolet to Terahertz, and future requirements are highly desired. In this review, the recent development of photodetectors based on III-V semiconductor with different detection range is discussed. First, the bandgap of III-V materials and synthesis methods of III-V nanostructures are explored, subsequently, the detection mechanism and key figures-of-merit for the photodetectors are introduced, and then the device performance and emerging applications of photodetectors are provided. Lastly, the challenges and future research directions of III-V materials for photodetectors are presented.
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Affiliation(s)
- Xiangna Cong
- College of Electronics and Information Engineering, Institute of Microelectronics, Shenzhen University, Shenzhen 518060, People's Republic of China
| | - Huabi Yin
- College of Electronics and Information Engineering, Institute of Microelectronics, Shenzhen University, Shenzhen 518060, People's Republic of China
| | - Yue Zheng
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, People's Republic of China
| | - Wenlong He
- College of Electronics and Information Engineering, Institute of Microelectronics, Shenzhen University, Shenzhen 518060, People's Republic of China
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Jeddi H, Adham K, Zhao Y, Witzigmann B, Römer F, Bermeo M, Borgström MT, Pettersson H. Enhanced LWIR response of InP/InAsP quantum discs-in-nanowire array photodetectors by photogating and ultra-thin ITO contacts. NANOTECHNOLOGY 2024; 35:215206. [PMID: 38382119 DOI: 10.1088/1361-6528/ad2bd0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/16/2024] [Accepted: 02/21/2024] [Indexed: 02/23/2024]
Abstract
Here we report on an experimental and theoretical investigation of the long-wavelength infrared (LWIR) photoresponse of photodetectors based on arrays of three million InP nanowires with axially embedded InAsP quantum discs. An ultra-thin top indium tin oxide contact combined with a novel photogating mechanism facilitates an improved LWIR normal incidence sensitivity in contrast to traditional planar quantum well photodetectors. The electronic structure of the quantum discs, including strain and defect-induced photogating effects, and optical transition matrix elements were calculated by an 8-bandk·psimulation along with solving drift-diffusion equations to unravel the physics behind the generation of narrow linewidth intersubband signals observed from the quantum discs.
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Affiliation(s)
- Hossein Jeddi
- Solid State Physics and NanoLund, Lund University, Box 118, SE-221 00 Lund, Sweden
- School of Information Technology, Halmstad University, Box 823, SE-301 18 Halmstad, Sweden
| | - Kristi Adham
- Solid State Physics and NanoLund, Lund University, Box 118, SE-221 00 Lund, Sweden
| | - Yue Zhao
- Solid State Physics and NanoLund, Lund University, Box 118, SE-221 00 Lund, Sweden
| | - Bernd Witzigmann
- Institute for Optoelectronics, Friedrich-Alexander Universität Erlangen-Nürnberg, Konrad-Zuse Str. 3/5, D-91052 Erlangen, Germany
| | - Friedhard Römer
- Institute for Optoelectronics, Friedrich-Alexander Universität Erlangen-Nürnberg, Konrad-Zuse Str. 3/5, D-91052 Erlangen, Germany
| | - Marie Bermeo
- Solid State Physics and NanoLund, Lund University, Box 118, SE-221 00 Lund, Sweden
| | - Magnus T Borgström
- Solid State Physics and NanoLund, Lund University, Box 118, SE-221 00 Lund, Sweden
| | - Håkan Pettersson
- Solid State Physics and NanoLund, Lund University, Box 118, SE-221 00 Lund, Sweden
- School of Information Technology, Halmstad University, Box 823, SE-301 18 Halmstad, Sweden
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Tu CW, Kaveh M, Fränzl M, Gao Q, Tan HH, Jagadish C, Schmitzer H, Wagner HP. Unique reflection from birefringent uncoated and gold-coated InP nanowire crystal arrays. OPTICS EXPRESS 2022; 30:3172-3182. [PMID: 35209584 DOI: 10.1364/oe.440891] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/18/2021] [Accepted: 12/29/2021] [Indexed: 06/14/2023]
Abstract
We demonstrate unique reflective properties of light from bare and gold-coated InP nanowire (NW) photonic crystal arrays. The undoped wurtzite InP nanowire arrays are grown by selective area epitaxy and coated with a 12-nm thick Al2O3 film to suppress atmospheric oxidation. A nominally 10-nm thick gold film is deposited around the NWs to investigate plasmonic effects. The reflectance spectra show pronounced Fabry-Perot oscillations, which are shifted for p- and s-polarized light due to a strong intrinsic birefringence in the NW arrays. Gold-coating of the NW array leads to a significant increase of the reflectance by a factor of two to three compared to the uncoated array, which is partially attributed to a plasmon resonance of the gold caps on top of the NWs and to a plasmonic antenna effect for p-polarized light. These interpretations are supported by finite-difference-time-domain simulations. Our experiments and simulations indicate that NW arrays can be used to design micrometer-sized polarizers, analyzers, and mirrors which are important optical elements in optoelectronic integrated circuits.
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Zagaglia L, Demontis V, Rossella F, Floris F. Semiconductor nanowire arrays for optical sensing: a numerical insight on the impact of array periodicity and density. NANOTECHNOLOGY 2021; 32:335502. [PMID: 33971637 DOI: 10.1088/1361-6528/abff8b] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/05/2021] [Accepted: 05/10/2021] [Indexed: 06/12/2023]
Abstract
Recent advances in the nanofabrication and modeling of metasurfaces have shown the potential of these systems in providing unprecedented control over light-matter interactions at the nanoscale, enabling immediate and tangible improvement of features and specifications of photonic devices that are becoming always more crucial in enhancing everyday life quality. In this work, we theoretically demonstrate that metasurfaces made of periodic and non-periodic deterministic assemblies of vertically aligned semiconductor nanowires can be engineered to display a tailored effective optical response and provide a suitable route to realize advanced systems with controlled photonic properties particularly interesting for sensing applications. The metasurfaces investigated in this paper correspond to nanowire arrays that can be experimentally realized exploiting nanolithography and bottom-up nanowire growth methods: the combination of these techniques allow to finely control the position and the physical properties of each individual nanowire in complex arrays. By resorting to numerical simulations, we address the near- and far-field behavior of a nanowire ensemble and we show that the controlled design and arrangement of the nanowires on the substrate may introduce unprecedented oscillations of light reflectance, yielding a metasurface which displays an electromagnetic behavior with great potential for sensing. Finite-difference time-domain numerical simulations are carried out to tailor the nanostructure parameters and systematically engineer the optical response in the VIS-NIR spectral range. By exploiting our computational-methods we set-up a complete procedure to design and test metasurfaces able to behave as functional sensors. These results are especially encouraging in the perspective of developing arrays of epitaxially grown semiconductor nanowires, where the suggested design can be easily implemented during the nanostructure growth, opening the way to fully engineered nanowire-based optical metamaterials.
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Affiliation(s)
- Luca Zagaglia
- Tyndall National Institute, University College Cork, Cork, Ireland
| | - Valeria Demontis
- NEST Laboratory, Scuola Normale Superiore and Istituto Nanoscienze-CNR, Pisa, Italy
| | - Francesco Rossella
- NEST Laboratory, Scuola Normale Superiore and Istituto Nanoscienze-CNR, Pisa, Italy
| | - Francesco Floris
- Tyndall National Institute, University College Cork, Cork, Ireland
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Jeddi H, Karimi M, Witzigmann B, Zeng X, Hrachowina L, Borgström MT, Pettersson H. Gain and bandwidth of InP nanowire array photodetectors with embedded photogated InAsP quantum discs. NANOSCALE 2021; 13:6227-6233. [PMID: 33885608 DOI: 10.1039/d1nr00846c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Here we report on the experimental results and advanced self-consistent real device simulations revealing a fundamental insight into the non-linear optical response of n+-i-n+ InP nanowire array photoconductors to selective 980 nm excitation of 20 axially embedded InAsP quantum discs in each nanowire. The optical characteristics are interpreted in terms of a photogating mechanism that results from an electrostatic feedback from trapped charge on the electronic band structure of the nanowires, similar to the gate action in a field-effect transistor. From detailed analyses of the complex charge carrier dynamics in dark and under illumination was concluded that electrons are trapped in two acceptor states, located at 140 and 190 meV below the conduction band edge, at the interface between the nanowires and a radial insulating SiOx cap layer. The non-linear optical response was investigated at length by photocurrent measurements recorded over a wide power range. From these measurements were extracted responsivities of 250 A W-1 (gain 320)@20 nW and 0.20 A W-1 (gain 0.2)@20 mW with a detector bias of 3.5 V, in excellent agreement with the proposed two-trap model. Finally, a small signal optical AC analysis was made both experimentally and theoretically to investigate the influence of the interface traps on the detector bandwidth. While the traps limit the cut-off frequency to around 10 kHz, the maximum operating frequency of the detectors stretches into the MHz region.
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Affiliation(s)
- Hossein Jeddi
- School of Information Technology, Halmstad University, Box 823, SE-301 18 Halmstad, Sweden.
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Wang H, Wang F, Xia H, Wang P, Li T, Li J, Wang Z, Sun J, Wu P, Ye J, Zhuang Q, Yang Z, Fu L, Hu W, Chen X, Lu W. Direct observation and manipulation of hot electrons at room temperature. Natl Sci Rev 2020; 8:nwaa295. [PMID: 34691730 PMCID: PMC8433094 DOI: 10.1093/nsr/nwaa295] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/29/2020] [Revised: 11/26/2020] [Accepted: 12/02/2020] [Indexed: 12/03/2022] Open
Abstract
In modern electronics and optoelectronics, hot electron behaviors are highly concerned, as they determine the performance limit of a device or system, like the associated thermal or power constraint of chips and the Shockley-Queisser limit for solar cell efficiency. To date, however, the manipulation of hot electrons has been mostly based on conceptual interpretations rather than a direct observation. The problem arises from a fundamental fact that energy-differential electrons are mixed up in real-space, making it hard to distinguish them from each other by standard measurements. Here we demonstrate a distinct approach to artificially (spatially) separate hot electrons from cold ones in semiconductor nanowire transistors, which thus offers a unique opportunity to observe and modulate electron occupied state, energy, mobility and even path. Such a process is accomplished through the scanning-photocurrent-microscopy measurements by activating the intervalley-scattering events and 1D charge-neutrality rule. Findings here may provide a new degree of freedom in manipulating non-equilibrium electrons for both electronic and optoelectronic applications.
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Affiliation(s)
- Hailu Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Fang Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Hui Xia
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Peng Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
- University of Chinese Academy of Sciences, Beijing 100049, China
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, School of Physics and Engineering, Zhengzhou University, Zhengzhou 450001, China
| | - Tianxin Li
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Juzhu Li
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Zhen Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
- University of Chinese Academy of Sciences, Beijing 100049, China
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, School of Physics and Engineering, Zhengzhou University, Zhengzhou 450001, China
| | - Jiamin Sun
- School of Microelectronics, Shandong University, Jinan 250100, China
| | - Peisong Wu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jiafu Ye
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Qiandong Zhuang
- Department of Physics, Lancaster University, Lancaster LA1 4YB, UK
| | - Zaixing Yang
- School of Microelectronics, Shandong University, Jinan 250100, China
| | - Lan Fu
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT 2601, Australia
| | - Weida Hu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xiaoshuang Chen
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Wei Lu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
- University of Chinese Academy of Sciences, Beijing 100049, China
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