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Shi X, Li W, Lan X, Guo Q, Zhu G, Du W, Wang T. Room-Temperature Polarized Light-Emitting Diode-Based on a 2D Monolayer Semiconductor. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2301949. [PMID: 37357166 DOI: 10.1002/smll.202301949] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/06/2023] [Revised: 06/05/2023] [Indexed: 06/27/2023]
Abstract
Transition metal dichalcogenide (TMD)-based 2D monolayer semiconductors, with the direct bandgap and the large exciton binding energy, are widely studied to develop miniaturized optoelectronic devices, e.g., nanoscale light-emitting diodes (LEDs). However, in terms of polarization control, it is still quite challenging to realize polarized electroluminescence (EL) from TMD monolayers, especially at room temperature. Here, by using Ag nanowire top electrode, polarized LEDs are demonstrated based on 2D monolayer semiconductors (WSe2 , MoSe2 , and WS2 ) at room temperature with a degree of polarization (DoP) ranging from 50% to 63%. The highly anisotropic EL emission comes from the 2D/Ag interface via the electron/hole injection and recombination process, where the EL emission is also enhanced by the polarization-dependent plasmonic resonance of the Ag nanowire. These findings introduce new insights into the design of polarized 2D LED devices at room temperature and may promote the development of miniaturized 2D optoelectronic devices.
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Affiliation(s)
- Xiuqi Shi
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu, 215123, P. R. China
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu, 215123, P. R. China
| | - Wenfei Li
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu, 215123, P. R. China
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu, 215123, P. R. China
| | - Xinhui Lan
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu, 215123, P. R. China
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu, 215123, P. R. China
| | - Qianqian Guo
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu, 215123, P. R. China
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu, 215123, P. R. China
| | - Guangpeng Zhu
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu, 215123, P. R. China
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu, 215123, P. R. China
| | - Wei Du
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu, 215123, P. R. China
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu, 215123, P. R. China
| | - Tao Wang
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu, 215123, P. R. China
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu, 215123, P. R. China
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Rangnekar SV, Sangwan VK, Jin M, Khalaj M, Szydłowska BM, Dasgupta A, Kuo L, Kurtz HE, Marks TJ, Hersam MC. Electroluminescence from Megasonically Solution-Processed MoS 2 Nanosheet Films. ACS NANO 2023; 17:17516-17526. [PMID: 37606956 DOI: 10.1021/acsnano.3c06034] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/23/2023]
Abstract
Due to their superior optoelectronic properties, monolayer two-dimensional (2D) transition metal dichalcogenides (TMDs) have attracted significant attention for electroluminescent devices. However, challenges in isolating optoelectronically active TMD monolayers using scalable liquid phase exfoliation have precluded electroluminescence in large-area, solution-processed TMD films. Here, we overcome these limitations and demonstrate electroluminescence from molybdenum disulfide (MoS2) nanosheet films by employing a monolayer-rich MoS2 ink produced by electrochemical intercalation and megasonic exfoliation. Characteristic monolayer MoS2 photoluminescence and electroluminescence spectral peaks at 1.88-1.90 eV are observed in megasonicated MoS2 films, with the emission intensity increasing with film thickness over the range 10-70 nm. Furthermore, employing a vertical light-emitting capacitor architecture enables uniform electroluminescence in large-area devices. These results indicate that megasonically exfoliated MoS2 monolayers retain their direct bandgap character in electrically percolating thin films even following multistep solution processing. Overall, this work establishes megasonicated MoS2 inks as an additive manufacturing platform for flexible, patterned, and miniaturized light sources that can likely be expanded to other TMD semiconductors.
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Affiliation(s)
- Sonal V Rangnekar
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Vinod K Sangwan
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Mengru Jin
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Maryam Khalaj
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Beata M Szydłowska
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Anushka Dasgupta
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Lidia Kuo
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Heather E Kurtz
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Tobin J Marks
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States
| | - Mark C Hersam
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States
- Department of Electrical and Computer Engineering, Northwestern University, Evanston, Illinois 60208, United States
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3
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Ramsden H, Sarkar S, Wang Y, Zhu Y, Kerfoot J, Alexeev EM, Taniguchi T, Watanabe K, Tongay S, Ferrari AC, Chhowalla M. Nanoscale Cathodoluminescence and Conductive Mode Scanning Electron Microscopy of van der Waals Heterostructures. ACS NANO 2023. [PMID: 37319105 DOI: 10.1021/acsnano.3c03261] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
van der Waals heterostructures (vdW-HSs) integrate dissimilar materials to form complex devices. These rely on the manipulation of charges at multiple interfaces. However, at present, submicrometer variations in strain, doping, or electrical breakages may exist undetected within a device, adversely affecting macroscale performance. Here, we use conductive mode and cathodoluminescence scanning electron microscopy (CM-SEM and SEM-CL) to investigate these phenomena. As a model system, we use a monolayer WSe2 (1L-WSe2) encapsulated in hexagonal boron nitride (hBN). CM-SEM allows for quantification of the flow of electrons during the SEM measurements. During electron irradiation at 5 keV, up to 70% of beam electrons are deposited into the vdW-HS and can subsequently migrate to the 1L-WSe2. This accumulation of charge leads to dynamic doping of 1L-WSe2, reducing its CL efficiency by up to 30% over 30 s. By providing a path for excess electrons to leave the sample, near full restoration of the initial CL signal can be achieved. These results indicate that the trapping of charges in vdW-HSs during electron irradiation must be considered, in order to obtain and maintain optimal performance of vdW-HS devices during processes such as e-beam lithography or SEM. Thus, CM-SEM and SEM-CL form a toolkit through which nanoscale characterization of vdW-HS devices can be performed, allowing electrical and optical properties to be correlated.
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Affiliation(s)
- Hugh Ramsden
- Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge, CB3 0FS, United Kingdom
- Cambridge Graphene Centre, University of Cambridge, 9 J. J. Thomson Avenue, Cambridge, CB3 0FA, United Kingdom
| | - Soumya Sarkar
- Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge, CB3 0FS, United Kingdom
| | - Yan Wang
- Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge, CB3 0FS, United Kingdom
| | - Yiru Zhu
- Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge, CB3 0FS, United Kingdom
| | - James Kerfoot
- Cambridge Graphene Centre, University of Cambridge, 9 J. J. Thomson Avenue, Cambridge, CB3 0FA, United Kingdom
| | - Evgeny M Alexeev
- Cambridge Graphene Centre, University of Cambridge, 9 J. J. Thomson Avenue, Cambridge, CB3 0FA, United Kingdom
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Sefaattin Tongay
- School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, Arizona 85287, United States
| | - Andrea C Ferrari
- Cambridge Graphene Centre, University of Cambridge, 9 J. J. Thomson Avenue, Cambridge, CB3 0FA, United Kingdom
| | - Manish Chhowalla
- Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge, CB3 0FS, United Kingdom
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Bian Z, Miao J, Zhang T, Chen H, Zhu Q, Chai J, Tian F, Wu S, Xu Y, Yu B, Chai Y, Zhao Y. Carrier Modulation in 2D Transistors by Inserting Interfacial Dielectric Layer for Area-Efficient Computation. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023:e2206791. [PMID: 37010037 DOI: 10.1002/smll.202206791] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/03/2022] [Revised: 03/05/2023] [Indexed: 06/19/2023]
Abstract
2D materials with atomic thickness display strong gate controllability and emerge as promising materials to build area-efficient electronic circuits. However, achieving the effective and nondestructive modulation of carrier density/type in 2D materials is still challenging because the introduction of dopants will greatly degrade the carrier transport via Coulomb scattering. Here, a strategy to control the polarity of tungsten diselenide (WSe2 ) field-effect transistors (FETs) via introducing hexagonal boron nitride (h-BN) as the interfacial dielectric layer is devised. By modulating the h-BN thickness, the carrier type of WSe2 FETs has been switched from hole to electron. The ultrathin body of WSe2 , combined with the effective polarity control, together contribute to the versatile single-transistor logic gates, including NOR, AND, and XNOR gates, and the operation of only two transistors as a half adder in logic circuits. Compared with the use of 12 transistors based on static Si CMOS technology, the transistor number of the half adder is reduced by 83.3%. The unique carrier modulation approach has general applicability toward 2D logic gates and circuits for the improvement of area efficiency in logic computation.
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Affiliation(s)
- Zheng Bian
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Centre, Zhejiang University, 38 Zheda Road, Hangzhou, 310027, China
| | - Jialei Miao
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Centre, Zhejiang University, 38 Zheda Road, Hangzhou, 310027, China
| | - Tianjiao Zhang
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Centre, Zhejiang University, 38 Zheda Road, Hangzhou, 310027, China
| | - Haohan Chen
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Centre, Zhejiang University, 38 Zheda Road, Hangzhou, 310027, China
| | - Qinghai Zhu
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Centre, Zhejiang University, 38 Zheda Road, Hangzhou, 310027, China
| | - Jian Chai
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Centre, Zhejiang University, 38 Zheda Road, Hangzhou, 310027, China
| | - Feng Tian
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Centre, Zhejiang University, 38 Zheda Road, Hangzhou, 310027, China
| | - Shaoxiong Wu
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Centre, Zhejiang University, 38 Zheda Road, Hangzhou, 310027, China
| | - Yang Xu
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Centre, Zhejiang University, 38 Zheda Road, Hangzhou, 310027, China
| | - Bin Yu
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Centre, Zhejiang University, 38 Zheda Road, Hangzhou, 310027, China
| | - Yang Chai
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, 999077, China
| | - Yuda Zhao
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Centre, Zhejiang University, 38 Zheda Road, Hangzhou, 310027, China
- Key Laboratory of Optoelectronic Chemical Materials and Devices of Ministry of Education, Jianghan University, Wuhan, 430056, China
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5
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Nanocavity-induced trion emission from atomically thin WSe 2. Sci Rep 2022; 12:15861. [PMID: 36151265 PMCID: PMC9508186 DOI: 10.1038/s41598-022-20226-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/05/2022] [Accepted: 09/09/2022] [Indexed: 11/08/2022] Open
Abstract
Exciton is a bosonic quasiparticle consisting of a pair of electron and hole, with promising potentials for optoelectronic device applications, such as exciton transistors, photodetectors and light emitting devices. However, the charge-neutral nature of excitons renders them challenging to manipulate using electronics. Here we present the generation of trions, a form of charged excitons, together with enhanced exciton resonance in monolayer WSe2. The excitation of the trion quasiparticles is achieved by the hot carrier transport from the integrated gold plasmonic nanocavity, formed by embedding monolayer WSe2 between gold nanoparticles and a gold film. The nanocavity-induced negatively charged trions provide a promising route for the manipulation of excitons, essential for the construction of all-exciton information processing circuits.
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6
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Lv L, Yu J, Hu M, Yin S, Zhuge F, Ma Y, Zhai T. Design and tailoring of two-dimensional Schottky, PN and tunnelling junctions for electronics and optoelectronics. NANOSCALE 2021; 13:6713-6751. [PMID: 33885475 DOI: 10.1039/d1nr00318f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Owing to their superior carrier mobility, strong light-matter interactions, and flexibility at the atomically thin thickness, two-dimensional (2D) materials are attracting wide interest for application in electronic and optoelectronic devices, including rectifying diodes, transistors, memory, photodetectors, and light-emitting diodes. At the heart of these devices, Schottky, PN, and tunneling junctions are playing an essential role in defining device function. Intriguingly, the ultrathin thickness and unique van der Waals (vdW) interlayer coupling in 2D materials has rendered enormous opportunities for the design and tailoring of various 2D junctions, e.g. using Lego-like hetero-stacking, surface decoration, and field-effect modulation methods. Such flexibility has led to marvelous breakthroughs during the exploration of 2D electronics and optoelectronic devices. To advance further, it is imperative to provide an overview of existing strategies for the engineering of various 2D junctions for their integration in the future. Thus, in this review, we provide a comprehensive survey of previous efforts toward 2D Schottky, PN, and tunneling junctions, and the functional devices built from them. Though these junctions exhibit similar configurations, distinct strategies have been developed for their optimal figures of merit based on their working principles and functional purposes.
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Affiliation(s)
- Liang Lv
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China.
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Hu W, Sheng Z, Hou X, Chen H, Zhang Z, Zhang DW, Zhou P. Ambipolar 2D Semiconductors and Emerging Device Applications. SMALL METHODS 2021; 5:e2000837. [PMID: 34927812 DOI: 10.1002/smtd.202000837] [Citation(s) in RCA: 14] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/07/2020] [Revised: 10/12/2020] [Indexed: 06/14/2023]
Abstract
With the rise of 2D materials, new physics and new processing techniques have emerged, triggering possibilities for the innovation of electronic and optoelectronic devices. Among them, ambipolar 2D semiconductors are of excellent gate-controlled capability and distinctive physical characteristic that the major charge carriers can be dynamically, reversibly and rapidly tuned between holes and electrons by electrostatic field. Based on such properties, novel devices, like ambipolar field-effect transistors, light-emitting transistors, electrostatic-field-charging PN diodes, are developed and show great advantages in logic and reconfigurable circuits, integrated optoelectronic circuits, and artificial neural network image sensors, enriching the functions of conventional devices and bringing breakthroughs to build new architectures. This review first focuses on the basic knowledge including fundamental principle of ambipolar semiconductors, basic material preparation techniques, and how to obtain the ambipolar behavior through electrical contact engineering. Then, the current ambipolar 2D semiconductors and their preparation approaches and main properties are summarized. Finally, the emerging new device structures are overviewed in detail, along with their novel electronic and optoelectronic applications. It is expected to shed light on the future development of ambipolar 2D semiconductors, exploring more new devices with novel functions and promoting the applications of 2D materials.
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Affiliation(s)
- Wennan Hu
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China
| | - Zhe Sheng
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China
| | - Xiang Hou
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China
| | - Huawei Chen
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China
| | - Zengxing Zhang
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China
| | - David Wei Zhang
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China
| | - Peng Zhou
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China
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8
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Wang C, Yang F, Gao Y. The highly-efficient light-emitting diodes based on transition metal dichalcogenides: from architecture to performance. NANOSCALE ADVANCES 2020; 2:4323-4340. [PMID: 36132931 PMCID: PMC9418884 DOI: 10.1039/d0na00501k] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/19/2020] [Accepted: 07/17/2020] [Indexed: 05/28/2023]
Abstract
Transition metal dichalcogenides (TMDCs) with layered architecture and excellent optoelectronic properties have been a hot spot for light-emitting diodes (LED). However, the light-emitting efficiency of TMDC LEDs is still low due to the large size limit of TMDC flakes and the inefficient device architecture. First and foremost, to develop the highly-efficient and reliable few-layer TMDC LEDs, the modulation of the electronic properties of TMDCs and TMDC heterostructures is necessary. In order to create efficient TMDC LEDs with prominent performance, an in-depth understanding of the working mechanism is needed. Besides conventional structures, the electric (or ionic liquid)-induced p-n junction of TMDCs is a useful configuration for multifunctional LED applications. The significant performances are contrasted in the four aspects of color, polarity, and external quantum efficiency. The color of light ranging from infrared to visible light can be acquired from TMDC LEDs by purposeful and selective architecture construction. To date, the maximum of the external quantum efficiency achieved by TMDC LEDs is 12%. In the demand for performance, the material and configuration of the nano device can be chosen according to this review. Moreover, novel electroluminescence devices involving single-photon emitters and alternative pulsed light emitters can expand their application scope. In this review, we provide an overview of the significant investigations that have provided a wealth of detailed information on TMDC electroluminescence devices at the molecular level.
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Affiliation(s)
- Caiyun Wang
- Center for Nanoscale Characterization & Devices (CNCD), School of Physics, Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST) Wuhan 430074 P. R. China
| | - Fuchao Yang
- Hubei Collaborative Innovation Centre for Advanced Organic Chemical Materials, Ministry of Education Key Laboratory for the Green Preparation and Application of Functional Materials, Hubei University Wuhan 430062 China
| | - Yihua Gao
- Center for Nanoscale Characterization & Devices (CNCD), School of Physics, Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST) Wuhan 430074 P. R. China
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Wang J, Zhou YJ, Xiang D, Ng SJ, Watanabe K, Taniguchi T, Eda G. Polarized Light-Emitting Diodes Based on Anisotropic Excitons in Few-Layer ReS 2. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e2001890. [PMID: 32608083 DOI: 10.1002/adma.202001890] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/18/2020] [Revised: 05/24/2020] [Indexed: 06/11/2023]
Abstract
An on-chip polarized light source is desirable in signal processing, optical communication, and display applications. Layered semiconductors with reduced in-plane symmetry have inherent anisotropic excitons that are attractive candidates as polarized dipole emitters. Herein, the demonstration of polarized light-emitting diode based on anisotropic excitons in few-layer ReS2 , a 2D semiconductor with excitonic transition energy of 1.5-1.6 eV, is reported. The light-emitting device is based on minority carrier (hole) injection into n-type ReS2 through a hexagonal boron nitride (hBN) tunnel barrier in a metal-insulator-semiconductor (MIS) van der Waals heterostack. Two distinct emission peaks from excitons are observed at near-infrared wavelength regime from few-layer ReS2 . The emissions exhibit a degree of polarization of 80% reflecting the nearly 1D nature of excitons in ReS2 .
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Affiliation(s)
- Junyong Wang
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore, 117551, Singapore
- Centre for Advanced 2D Materials, National University of Singapore, 6 Science Drive 2, Singapore, 117546, Singapore
| | - Yong Justin Zhou
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore, 117551, Singapore
| | - Du Xiang
- Department of Chemistry, National University of Singapore, 2 Science Drive 3, Singapore, 117543, Singapore
| | - Shiuan Jun Ng
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore, 117551, Singapore
| | - Kenji Watanabe
- National Institute for Material Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Takashi Taniguchi
- National Institute for Material Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Goki Eda
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore, 117551, Singapore
- Centre for Advanced 2D Materials, National University of Singapore, 6 Science Drive 2, Singapore, 117546, Singapore
- Department of Chemistry, National University of Singapore, 2 Science Drive 3, Singapore, 117543, Singapore
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