Semiconductor-Ferromagnetic Insulator-Superconductor Nanowires: Stray Field and Exchange Field

Ubiquitous Superconducting Diode Effect in Superconductor Thin Films

The macroscopic coherence in superconductors supports dissipationless supercurrents that could play a central role in emerging quantum technologies. Accomplishing unequal supercurrents in the forward and backward directions would enable unprecedented functionalities. This nonreciprocity of critical supercurrents is called the superconducting (SC) diode effect. We demonstrate the strong SC diode effect in conventional SC thin films, such as niobium and vanadium, employing external magnetic fields as small as 1 Oe. Interfacing the SC layer with a ferromagnetic semiconductor EuS, we further accomplish the nonvolatile SC diode effect reaching a giant efficiency of 65%. By careful control experiments and theoretical modeling, we demonstrate that the critical supercurrent nonreciprocity in SC thin films could be easily accomplished with asymmetrical vortex edge and surface barriers and the universal Meissner screening current governing the critical currents. Our engineering of the SC diode effect in simple systems opens the door for novel technologies while revealing the ubiquity of the Meissner screening effect induced SC diode effect in superconducting films, and it should be eliminated with great care in the search for exotic superconducting states harboring finite-momentum Cooper pairing.

Quantized Spin Pumping in Topological Ferromagnetic-Superconducting Nanowires

Semiconducting nanowires with strong spin-orbit coupling in the presence of induced superconductivity and ferromagnetism can support Majorana zero modes. We study the pumping due to the precession of the magnetization in single-subband nanowires and show that spin pumping is robustly quantized when the hybrid nanowire is in the topologically nontrivial phase, whereas charge pumping is not quantized. Moreover, there exists one-to-one correspondence between the quantized conductance, entropy change and spin pumping in long topologically nontrivial nanowires but these observables are uncorrelated in the case of accidental zero-energy Andreev bound states in the trivial phase. Thus, we conclude that observation of correlated and quantized peaks in the conductance, entropy change and spin pumping would provide strong evidence of Majorana zero modes, and we elaborate how topological Majorana zero modes can be distinguished from quasi-Majorana modes potentially created by a smooth tunnel barrier at the lead-nanowire interface. Finally, we discuss peculiar interference effects affecting the spin pumping in short nanowires at very low energies.

Exceptional degeneracies in non-Hermitian Rashba semiconductors

Exceptional points (EPs) are spectral degeneracies of non-Hermitian (NH) systems where eigenvalues and eigenvectors coalesce, inducing unique topological phases that have no counterpart in the Hermitian realm. Here we consider an NH system by coupling a two-dimensional semiconductor with Rashba spin-orbit coupling (SOC) to a ferromagnet lead and show the emergence of highly tunable EPs along rings in momentum space. Interestingly, these exceptional degeneracies are the endpoints of lines formed by the eigenvalue coalescence at finite real energy, resembling the bulk Fermi arcs commonly defined at zero real energy. We then show that an in-plane Zeeman field provides a way to control these exceptional degeneracies although higher values of non-Hermiticity are required in contrast to the zero Zeeman field regime. Furthermore, we find that the spin projections also coalescence at the exceptional degeneracies and can acquire larger values than in the Hermitian regime. Finally, we demonstrate that the exceptional degeneracies induce large spectral weights, which can be used as a signature for their detection. Our results thus reveal the potential of systems with Rashba SOC for realizing NH bulk phenomena.

Sub-nanometer mapping of strain-induced band structure variations in planar nanowire core-shell heterostructures

Strain relaxation mechanisms during epitaxial growth of core-shell nanostructures play a key role in determining their morphologies, crystal structure and properties. To unveil those mechanisms, we perform atomic-scale aberration-corrected scanning transmission electron microscopy studies on planar core-shell ZnSe@ZnTe nanowires on α-Al₂O₃ substrates. The core morphology affects the shell structure involving plane bending and the formation of low-angle polar boundaries. The origin of this phenomenon and its consequences on the electronic band structure are discussed. We further use monochromated valence electron energy-loss spectroscopy to obtain spatially resolved band-gap maps of the heterostructure with sub-nanometer spatial resolution. A decrease in band-gap energy at highly strained core-shell interfacial regions is found, along with a switch from direct to indirect band-gap. These findings represent an advance in the sub-nanometer-scale understanding of the interplay between structure and electronic properties associated with highly mismatched semiconductor heterostructures, especially with those related to the planar growth of heterostructured nanowire networks.

Planar growth of nanowire arrays involves interactions between materials that affect the electronic behavior of the effective heterojunction. Here, authors show how core curvature and cross-section morphology affect shell growth, demonstrating how strain at the core-shell interface induces electronic band modulations in ZnSe@ZnTe nanowires.

Magnetoelectric effects in Josephson junctions

The review is devoted to the fundamental aspects and characteristic features of the magnetoelectric effects, reported in the literature on Josephson junctions (JJs). The main focus of the review is on the manifestations of the direct and inverse magnetoelectric effects in various types of Josephson systems. They provide a coupling of the magnetization in superconductor/ferromagnet/superconductor JJs to the Josephson current. The direct magnetoelectric effect is a driving force of spin torques acting on the ferromagnet inside the JJ. Therefore it is of key importance for the electrical control of the magnetization. The inverse magnetoelectric effect accounts for the back action of the magnetization dynamics on the Josephson subsystem, in particular, making the JJ to be in the resistive state in the presence of the magnetization dynamics of any origin. The perspectives of the coupling of the magnetization in JJs with ferromagnetic interlayers to the Josephson current via the magnetoelectric effects are discussed.

Majorana Zero Modes in Ferromagnetic Wires without Spin-Orbit Coupling

We present a novel controllable platform for engineering Majorana zero modes. The platform consists of a ferromagnetic metallic wire placed among conventional superconductors, which are in proximity to ferromagnetic insulators. We demonstrate that Majorana zero modes emerge localised at the edges of the ferromagnetic wire, due to the interplay of the applied supercurrents and the induced by proximity exchange fields with conventional superconductivity. Our mechanism does not rely on the pairing of helical fermions by combining conventional superconductivity with spin-orbit coupling, but rather exploits the misalignment between the magnetization of the ferromagnetic insulators and that of the ferromagnetic wire.

Controlling magnetoresistance by tuning semimetallicity through dimensional confinement and heteroepitaxy

Controlling electronic properties via band structure engineering is at the heart of modern semiconductor devices. Here, we extend this concept to semimetals where, using LuSb as a model system, we show that quantum confinement lifts carrier compensation and differentially affects the mobility of the electron and hole-like carriers resulting in a strong modification in its large, nonsaturating magnetoresistance behavior. Bonding mismatch at the heteroepitaxial interface of a semimetal (LuSb) and a semiconductor (GaSb) leads to the emergence of a two-dimensional, interfacial hole gas. This is accompanied by a charge transfer across the interface that provides another avenue to modify the electronic structure and magnetotransport properties in the ultrathin limit. Our work lays out a general strategy of using confined thin-film geometries and heteroepitaxial interfaces to engineer electronic structure in semimetallic systems, which allows control over their magnetoresistance behavior and simultaneously provides insights into its origin.

Hysteretic magnetoresistance in nanowire devices due to stray fields induced by micromagnets

We study hysteretic magnetoresistance in InSb nanowires due to stray magnetic fields from CoFe micromagnets. Devices without any ferromagnetic components show that the magnetoresistance of InSb nanowires commonly exhibits either a local maximum or local minimum at zero magnetic field. Switching of microstrip magnetizations then results in positive or negative hysteretic dependence as conductance maxima or minima shift with respect to the global external field. Stray fields are found to be in the range of tens of millitesla, comparable to the scale over which the nanowire magnetoresistance develops. We observe that the stray field signal is similar to that obtained in devices with ferromagnetic contacts (spin valves). We perform micromagnetic simulations which are in reasonable agreement with the experiment. The use of locally varying magnetic fields may bring new ideas for Majorana circuits in which nanowire networks require control over field orientation at the nanoscale.

Highly Transparent Gatable Superconducting Shadow Junctions

Gate-tunable junctions are key elements in quantum devices based on hybrid semiconductor-superconductor materials. They serve multiple purposes ranging from tunnel spectroscopy probes to voltage-controlled qubit operations in gatemon and topological qubits. Common to all is that junction transparency plays a critical role. In this study, we grow single-crystalline InAs, InSb, and InAs_1-xSb_x semiconductor nanowires with epitaxial Al, Sn, and Pb superconductors and in situ shadowed junctions in a single-step molecular beam epitaxy process. We investigate correlations between fabrication parameters, junction morphologies, and electronic transport properties of the junctions and show that the examined in situ shadowed junctions are of significantly higher quality than the etched junctions. By varying the edge sharpness of the shadow junctions, we show that the sharpest edges yield the highest junction transparency for all three examined semiconductors. Further, critical supercurrent measurements reveal an extraordinarily high I_CR_N, close to the KO-2 limit. This study demonstrates a promising engineering path toward reliable gate-tunable superconducting qubits.

A Josephson phase battery

A classical battery converts chemical energy into a persistent voltage bias that can power electronic circuits. Similarly, a phase battery is a quantum device that provides a persistent phase bias to the wave function of a quantum circuit. It represents a key element for quantum technologies based on phase coherence. Here we demonstrate a phase battery in a hybrid superconducting circuit. It consists of an n-doped InAs nanowire with unpaired-spin surface states, that is proximitized by Al superconducting leads. We find that the ferromagnetic polarization of the unpaired-spin states is efficiently converted into a persistent phase bias φ₀ across the wire, leading to the anomalous Josephson effect^1,2. We apply an external in-plane magnetic field and, thereby, achieve continuous tuning of φ₀. Hence, we can charge and discharge the quantum phase battery. The observed symmetries of the anomalous Josephson effect in the vectorial magnetic field are in agreement with our theoretical model. Our results demonstrate how the combined action of spin-orbit coupling and exchange interaction induces a strong coupling between charge, spin and superconducting phase, able to break the phase rigidity of the system.

Coherent Epitaxial Semiconductor-Ferromagnetic Insulator InAs/EuS Interfaces: Band Alignment and Magnetic Structure

Hybrid semiconductor-ferromagnetic insulator heterostructures are interesting due to their tunable electronic transport, self-sustained stray field, and local proximitized magnetic exchange. In this work, we present lattice-matched hybrid epitaxy of semiconductor-ferromagnetic insulator InAs/EuS heterostructures and analyze the atomic-scale structure and their electronic and magnetic characteristics. The Fermi level at the InAs/EuS interface is found to be close to the InAs conduction band and in the band gap of EuS, thus preserving the semiconducting properties. Both neutron and X-ray reflectivity measurements show that the overall ferromagnetic component is mainly localized in the EuS thin film with a suppression of the Eu moment in the EuS layer nearest the InAs and magnetic moments outside the detection limits on the pure InAs side. This work presents a step toward realizing defect-free semiconductor-ferromagnetic insulator epitaxial hybrids for spin-lifted quantum and spintronic applications without external magnetic fields.