Methylation-Induced Reversible Metallic-Semiconducting Transition of Single-Walled Carbon Nanotube Arrays for High-Performance Field-Effect Transistors

Strong Room-Temperature Ferromagnetism of MoS2 Compound Produced by Defect Generation

Ferromagnetic materials have been attracting great interest in the last two decades due to their application in spintronics devices. One of the hot research areas in magnetism is currently the two-dimensional materials, transition metal dichalcogenides (TMDCs), which have unique physical properties. The origins and mechanisms of transition metal dichalcogenides (TMDCs), especially the correlation between magnetism and defects, have been studied recently. We investigate the changes in magnetic properties with a variation in annealing temperature for the nanoscale compound MoS2. The pristine MoS2 exhibits diamagnetic properties from low-to-room temperature. However, MoS2 compounds annealed at different temperatures showed that the controllable magnetism and the strongest ferromagnetic results were obtained for the 700 °C-annealed sample. These magnetizations are attributed to the unpaired electrons of vacancy defects that are induced by annealing, which are confirmed using Raman spectroscopy and electron paramagnetic resonance spectroscopy (EPR).

Selected-Area Fabrication of a Single-Walled Carbon Nanotube Schottky Junction with Tunable Gate Rectification

Single-walled carbon nanotube (SWNT)-based devices are expected to play an important role in the next generation of electronic integrated circuits. As an important structural unit for SWNT-based electronics, the Schottky junction has a series of functions such as rectification, photoelectric detection, switching, etc. Here, we demonstrate a well-controlled localized radical reaction method to prepare an intramolecular SWNT Schottky junction with a closed edge. This junction exhibits strong gate-dependent rectifying behavior and a high rectification ratio of 962. Furthermore, the semiconducting part on the junction side could be effectively tuned from p-type doping to n-type doping, resulting in reversible rectifying behavior. Our work paves a new avenue for the design and synthesis of an SWNT Schottky junction, which is very important to future applications for carbon-based nanoelectronic devices.

Advances and Frontiers in Single-Walled Carbon Nanotube Electronics

Single-walled carbon nanotubes (SWCNTs) have been considered as one of the most promising electronic materials for the next-generation electronics in the more Moore era. Sub-10 nm SWCNT-field effect transistors (FETs) have been realized with several performances exceeding those of Si-based FETs at the same feature size. Several industrial initiatives have attempted to implement SWCNT electronics in integrated circuit (IC) chips. Here, the recent advances in SWCNT electronics are reviewed from in-depth understanding of the fundamental electronic structures, the carrier transport mechanisms, and the metal/SWCNT contact properties. In particular, the subthreshold switching properties are highlighted for low-power, energy-efficient device operations. State-of-the-art low-power SWCNT-based electronics and the key strategies to realize low-voltage and low-power operations are outlined. Finally, the essential challenges and prospects from the material preparation, device fabrication, and large-scale ICs integration for future SWCNT-based electronics are foregrounded.

Effect of Toluene Addition in an Electric Arc on Morphology, Surface Modification, and Oxidation Behavior of Carbon Nanohorns and Their Sedimentation in Water

Carbon nanohorns (CNHs) are attractive for various applications, where a high specific surface area and long dispersion stability in water are important. In the present work, we study these parameters of CNHs prepared by arc evaporation of graphite depending on the conditions of the synthesis and subsequent oxidation in air. It is shown that the addition of toluene in the reactor during the arcing allows obtaining CNHs functionalized with −CH_x groups. Heating of CNHs in air at 400 °C leads to substitution of −CH_x groups for oxygen-containing groups. Moreover, the CNH endcaps are opened at 500 °C, and as a result, the specific surface area of CNHs increases 4 times. Aqueous suspensions with a concentration of oxidized CNHs of 100 µg/mL are stable for 8 months.

Laser-induced phenylation reaction to prepare semiconducting single-walled carbon nanotube arrays

Single-walled carbon nanotube (SWNT) arrays are the key to making integrated circuits smaller than 10 nanometers. Herein, a brand-new approach is proposed to efficiently prepare semiconducting (s-) SWNT arrays by implementing a simple phenylation to modulate the metallic SWNT bandgap through the radical reaction between SWNTs and benzoyl peroxide molecules. Electrical measurement indicates that the percentage of s-SWNTs in the functionalized arrays could be higher than 97.8% after phenylation, promoting its exceptional performance as a field-effect transistor with an on-off ratio of 11 300. Our work paves a new avenue for the design and synthesis of high-purity s-SWNT arrays, which are highly important for future applications in carbon-based nano-electronic devices.

Nanoleite: a new semiconducting carbon allotrope predicted by density functional theory

A new carbon allotrope with an indirect bandgap of 2.06 eV has been predicted by density functional theory, which has a high absorption coefficient in the visible spectral range that is suitable for solar cell application.

A review of recent work on using metal–organic frameworks to grow carbon nanotubes

In this review, we summarize catalysts and synthetic strategies for the synthesis of MOF-derived CNT-based composite materials.