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Duan F, Wei D, Chen A, Zheng X, Wang H, Qin G. Efficient modulation of thermal transport in two-dimensional materials for thermal management in device applications. NANOSCALE 2023; 15:1459-1483. [PMID: 36541854 DOI: 10.1039/d2nr06413h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
With the development of chip technology, the density of transistors on integrated circuits is increasing and the size is gradually shrinking to the micro-/nanoscale, with the consequent problem of heat dissipation on chips becoming increasingly serious. For device applications, efficient heat dissipation and thermal management play a key role in ensuring device operation reliability. In this review, we summarize the thermal management applications based on 2D materials from both theoretical and experimental perspectives. The regulation approaches of thermal transport can be divided into two main types: intrinsic structure engineering (acting on the intrinsic structure) and non-structure engineering (applying external fields). On one hand, the thermal transport properties of 2D materials can be modulated by defects and disorders, size effect (including length, width, and the number of layers), heterostructures, structure regulation, doping, alloy, functionalizing, and isotope purity. On the other hand, strain engineering, electric field, and substrate can also modulate thermal transport efficiently without changing the intrinsic structure of the materials. Furthermore, we propose a perspective on the topic of using magnetism and light field to modulate the thermal transport properties of 2D materials. In short, we comprehensively review the existing thermal management modulation applications as well as the latest research progress, and conclude with a discussion and perspective on the applications of 2D materials in thermal management, which will be of great significance to the development of next-generation nanoelectronic devices.
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Affiliation(s)
- Fuqing Duan
- State Key Laboratory of Advanced Design and Manufacturing for Vehicle Body, College of Mechanical and Vehicle Engineering, Hunan University, Changsha 410082, P. R. China.
| | - Donghai Wei
- State Key Laboratory of Advanced Design and Manufacturing for Vehicle Body, College of Mechanical and Vehicle Engineering, Hunan University, Changsha 410082, P. R. China.
| | - Ailing Chen
- State Key Laboratory of Advanced Design and Manufacturing for Vehicle Body, College of Mechanical and Vehicle Engineering, Hunan University, Changsha 410082, P. R. China.
| | - Xiong Zheng
- State Key Laboratory of Advanced Design and Manufacturing for Vehicle Body, College of Mechanical and Vehicle Engineering, Hunan University, Changsha 410082, P. R. China.
| | - Huimin Wang
- Hunan Key Laboratory for Micro-Nano Energy Materials & Device and School of Physics and Optoelectronics, Xiangtan University, Xiangtan 411105, Hunan, China
| | - Guangzhao Qin
- State Key Laboratory of Advanced Design and Manufacturing for Vehicle Body, College of Mechanical and Vehicle Engineering, Hunan University, Changsha 410082, P. R. China.
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Liu X, Liu J, Fang M, Wei Y, Su Y, Chen Y, Peng G, Cai W, Luo W, Deng C, Zhang X. Energy Dissipation and Electrical Breakdown in Multilayer PtSe 2 Electronics. ACS APPLIED MATERIALS & INTERFACES 2022; 14:51122-51129. [PMID: 36331247 DOI: 10.1021/acsami.2c15252] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Investigating the energy dissipation in micro- and nanoscale is fundamental to improve the performance and reliability of two-dimensional (2D) electronics. Recently, 2D platinum selenide (PtSe2) has drawn extensive attention in developing next-generation functional devices due to its distinctive fusion of versatile properties. Toward practical applications of PtSe2 devices, it is essential to understand the interfacial thermal properties between PtSe2 and its substrate. Among them, the thermal boundary conductance (TBC) has played a critical role for out-of-plane heat dissipation of PtSe2 devices. Here, we identify the energy dissipation behavior of multilayer PtSe2 devices and extract the actual TBC value of the PtSe2/SiO2 interface by Raman thermometry with electrical bias. The obtained TBC value is about 8.6 MW m-2 K-1, and it belongs to the low end of as-known solid-solid interfaces, suggesting possible applications regarding thermoelectric devices or others reliant on a large temperature gradient. Furthermore, the maximum current density of the PtSe2 device determines its threshold power, which is crucial for improving device design and guiding future applications. Therefore, we explore the electrical breakdown profile of the multilayer PtSe2 device, revealing the breakdown current density of 17.7 MA cm-2 and threshold power density of 0.2 MW cm-2, which are larger than typical values for commonly used aluminum and copper. These results provide key insights into the energy dissipation of PtSe2 devices and make PtSe2 an excellent candidate for thermal confinement applications and nanometer-thin interconnects, which will benefit the development of energy-efficient functional 2D devices.
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Affiliation(s)
- Xiao Liu
- College of Physical Science and Technology, Xiamen University, Xiamen361005, China
- College of Science, National University of Defense Technology, Changsha410073, China
| | - Jinxin Liu
- College of Physical Science and Technology, Xiamen University, Xiamen361005, China
- College of Science, National University of Defense Technology, Changsha410073, China
| | - Mengke Fang
- College of Physical Science and Technology, Xiamen University, Xiamen361005, China
- College of Science, National University of Defense Technology, Changsha410073, China
| | - Yuehua Wei
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha410073, China
| | - Yue Su
- College of Physical Science and Technology, Xiamen University, Xiamen361005, China
- College of Science, National University of Defense Technology, Changsha410073, China
| | - Yangbo Chen
- College of Physical Science and Technology, Xiamen University, Xiamen361005, China
| | - Gang Peng
- College of Science, National University of Defense Technology, Changsha410073, China
| | - Weiwei Cai
- College of Physical Science and Technology, Xiamen University, Xiamen361005, China
- Jiujiang Research Institute of Xiamen University, Jiujiang332105, China
| | - Wei Luo
- College of Science, National University of Defense Technology, Changsha410073, China
| | - Chuyun Deng
- College of Science, National University of Defense Technology, Changsha410073, China
| | - Xueao Zhang
- College of Physical Science and Technology, Xiamen University, Xiamen361005, China
- Jiujiang Research Institute of Xiamen University, Jiujiang332105, China
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Chen SN, Liu XS, Luo RH, Xu EZ, Tian JG, Liu ZB. Tuning the Thermal Transport of Hexagonal Boron Nitride/Reduced Graphene Oxide Heterostructures. ACS APPLIED MATERIALS & INTERFACES 2022; 14:22626-22633. [PMID: 35522991 DOI: 10.1021/acsami.2c04253] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Tuning the thermal properties of materials is considered to be of crucial significance for improving the performance of electronic devices. Along these lines, the development of van der Waals (vdW) heterostructures becomes an effective solution to affect the thermal transport mechanisms. However, vdW interactions usually block phonon transport, which leads to a reduction in thermal conductivity. In this work, we experimentally demonstrate a large enhancement in the thermal conductivity of a vdW heterostructure composed of few-layer hexagonal boron nitride (h-BN) and reduced graphene oxide (RGO). By controlling the reduction temperature of RGO and changing the thickness of h-BN, the thermal conductivity of the RGO is increased by nearly 18 times, namely, from 91 to 1685 W m-1 K-1. Photothermal scanning imaging is used to reveal the changes in the heat transfer and temperature distribution of the h-BN/RGO heterostructure. Both photothermal scanning and Raman spectroscopy experiments show that the vdW interaction between h-BN and RGO can greatly increase the thermal conductivity of RGO, which is in contrast to the conventional understanding that vdW interaction reduces thermal conductivity. Our work paves the way for the manipulation of the thermal conductivity of two-dimensional (2D) heterostructures, which could be of great significance for future nanoelectronic circuits.
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Affiliation(s)
- Shao-Nan Chen
- The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, School of Physics and Teda Applied Physics Institute, Nankai University, Tianjin 300071, China
| | - Xu-Shan Liu
- The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, School of Physics and Teda Applied Physics Institute, Nankai University, Tianjin 300071, China
| | - Rong-Hui Luo
- The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, School of Physics and Teda Applied Physics Institute, Nankai University, Tianjin 300071, China
| | - En-Ze Xu
- The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, School of Physics and Teda Applied Physics Institute, Nankai University, Tianjin 300071, China
| | - Jian-Guo Tian
- The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, School of Physics and Teda Applied Physics Institute, Nankai University, Tianjin 300071, China
- Renewable Energy Conversion and Storage Center, Nankai University, Tianjin 300071, China
| | - Zhi-Bo Liu
- The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, School of Physics and Teda Applied Physics Institute, Nankai University, Tianjin 300071, China
- Renewable Energy Conversion and Storage Center, Nankai University, Tianjin 300071, China
- The Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, China
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Wei Y, Wei Z, Zheng X, Liu J, Chen Y, Su Y, Luo W, Peng G, Huang H, Cai W, Deng C, Zhang X, Qin S. Stress Effects on Temperature-Dependent In-Plane Raman Modes of Supported Monolayer Graphene Induced by Thermal Annealing. NANOMATERIALS 2021; 11:nano11102751. [PMID: 34685191 PMCID: PMC8538804 DOI: 10.3390/nano11102751] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 09/14/2021] [Revised: 10/08/2021] [Accepted: 10/13/2021] [Indexed: 11/28/2022]
Abstract
The coupling strength between two-dimensional (2D) materials and substrate plays a vital role on thermal transport properties of 2D materials. Here we systematically investigate the influence of vacuum thermal annealing on the temperature-dependence of in-plane Raman phonon modes in monolayer graphene supported on silicon dioxide substrate via Raman spectroscopy. Intriguingly, raising the thermal annealing temperature can significantly enlarge the temperature coefficient of supported monolayer graphene. The derived temperature coefficient of G band remains mostly unchanged with thermal annealing temperature below 473 K, while it increases from −0.030 cm−1/K to −0.0602 cm−1/K with thermal annealing temperature ranging from 473 K to 773 K, suggesting the great impact of thermal annealing on thermal transport in supported monolayer graphene. Such an impact might reveal the vital role of coupling strength on phonon scattering and on the thermal transport property of supported monolayer graphene. To further interpret the thermal annealing mechanism, the compressive stress in supported monolayer graphene, which is closely related to coupling strength and is studied through the temperature-dependent Raman spectra. It is found that the variation tendency for compressive stress induced by thermal annealing is the same as that for temperature coefficient, implying the intense connection between compressive stress and thermal transport. Actually, 773 K thermal annealing can result in 2.02 GPa compressive stress on supported monolayer graphene due to the lattice mismatch of graphene and substrate. This study proposes thermal annealing as a feasible path to modulate the thermal transport in supported graphene and to design future graphene-based devices.
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Affiliation(s)
- Yuehua Wei
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China;
| | - Zhenhua Wei
- College of Arts and Sciences, National University of Defense Technology, Changsha 410073, China; (Z.W.); (W.L.); (G.P.)
| | - Xiaoming Zheng
- College of Physical Science and Technology, Xiamen University, Xiamen 361005, China; (X.Z.); (J.L.); (Y.C.); (Y.S.); (W.C.)
| | - Jinxin Liu
- College of Physical Science and Technology, Xiamen University, Xiamen 361005, China; (X.Z.); (J.L.); (Y.C.); (Y.S.); (W.C.)
| | - Yangbo Chen
- College of Physical Science and Technology, Xiamen University, Xiamen 361005, China; (X.Z.); (J.L.); (Y.C.); (Y.S.); (W.C.)
| | - Yue Su
- College of Physical Science and Technology, Xiamen University, Xiamen 361005, China; (X.Z.); (J.L.); (Y.C.); (Y.S.); (W.C.)
| | - Wei Luo
- College of Arts and Sciences, National University of Defense Technology, Changsha 410073, China; (Z.W.); (W.L.); (G.P.)
| | - Gang Peng
- College of Arts and Sciences, National University of Defense Technology, Changsha 410073, China; (Z.W.); (W.L.); (G.P.)
| | - Han Huang
- Hunan Key Laboratory of Super-Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha 410083, China;
| | - Weiwei Cai
- College of Physical Science and Technology, Xiamen University, Xiamen 361005, China; (X.Z.); (J.L.); (Y.C.); (Y.S.); (W.C.)
| | - Chuyun Deng
- College of Arts and Sciences, National University of Defense Technology, Changsha 410073, China; (Z.W.); (W.L.); (G.P.)
- Correspondence: (C.D.); (X.Z.); (S.Q.)
| | - Xueao Zhang
- College of Physical Science and Technology, Xiamen University, Xiamen 361005, China; (X.Z.); (J.L.); (Y.C.); (Y.S.); (W.C.)
- Correspondence: (C.D.); (X.Z.); (S.Q.)
| | - Shiqiao Qin
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China;
- Correspondence: (C.D.); (X.Z.); (S.Q.)
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