Inverse Growth of Large-Grain-Size and Stable Inorganic Perovskite Micronanowire Photodetectors

Surface Microstructure Engineering in MAPbBr3 Microsheets for Performance-Enhanced Photodetectors

Metal halide-perovskite-based photodetectors have recently emerged as a class of promising optoelectronic devices in various fields. Meanwhile, nano/microstructuring perovskite-based photodetectors are a facile integration with complementary metal-oxide semiconductors for miniaturized imaging systems. However, there are still challenges to be overcome in reducing the losses caused by light reflection on the surface of microstructural perovskites. In this work, surface microstructure engineering is employed in MAPbBr3 microsheets for reducing light reflection and improving light absorption, resulting in high-performance perovskite photodetectors. MAPbBr3 microsheets, which possess different surface morphologies of flat, upright hemisphere arrays and inverted hemisphere arrays (IHAs), are fabricated by a simple microstructure template-assisted space confinement process. The light absorption capacity of IHA MAPbBr3 is significantly higher than that of the other two structures. Hence, IHA photodetectors with excellent figures of merit, including low dark current, decent responsivity, and fast speed, are achieved. Furthermore, the noise of the IHA photodetectors is only ∼10-13 A/H z , which results in the superior sensitivity for weak light detection with a specific detectivity up to 1011 Jones. Our results demonstrate that surface engineering is a simple, low-cost, yet effective approach to improve the performance of nano-/micro-optoelectronic devices.

Ultrafast Response of Centimeter Scale Thin CsPbBr3 Single Crystal Film Photodetector for Optical Communication

The photodetector (PD) is the key component to realize efficient optoelectronic conversion signal in the visible light communication (VLC) system. The response speed directly determines the bandwidth of the whole system. Metal halide perovskite is a neotype of low-cost solution processing semiconductor, with strong optical absorption, low trap density, and high carrier mobility, thus has been widely explored in photoelectric detection applications. However, previously reported perovskite polycrystalline photodetectors exhibit limited response speed due to the existence of grain boundaries. Here, an improved confined space method is developed through adjusting the heating area to control nucleation, resulting in centimeter scale fully inorganic perovskite CsPbBr₃ thin single crystal films (SCFs) (<40 µm). The smooth surface and high crystallinity of CsPbBr₃ SCFs render admirable exciton lifetime. The planar metal-semiconductor-metal photodetector using CsPbBr₃ SCF as the photosensitive layer demonstrates a limit response time of 200/300 ns and a VLC within 100-500 kHz frequency for both 365 nm and white light, which is superior to previously reported CsPbBr₃ polycrystalline film and single crystal photodetectors.

Atomic Level Insights into Metal Halide Perovskite Materials by Scanning Tunneling Microscopy and Spectroscopy

Metal halide perovskite materials (MHPMs) have attracted significant attention because of their superior optoelectronic properties and versatile applications. The power conversion efficiency of MHPM solar cells (PSCs) has skyrocketed to 25.5 %. Although the performance of PSCs is already competitive, several important challenges still need to be solved to realize commercial applications. A thorough understanding of surface atomic structures and structure-property relationships is at the heart of these remaining issues. Scanning tunneling microscopy (STM) and spectroscopy (STS) can be used to characterize the surface properties of MHPMs, which can offer crucial insights into MHPMs at the atomic scale. This Review summarizes recent progress in STM and STS studies on MHPMs, with a focus on the surface properties. We provide understanding from the comparative perspective of several different MHPMs. We also highlight a series of novel phenomena observed by STM and STS. Finally, we outline a few research topics of primary importance for future studies.

Oriented Halide Perovskite Nanostructures and Thin Films for Optoelectronics

Oriented semiconductor nanostructures and thin films exhibit many advantageous properties, such as directional exciton transport, efficient charge transfer and separation, and optical anisotropy, and hence these nanostructures are highly promising for use in optoelectronics and photonics. The controlled growth of these structures can facilitate device integration to improve optoelectronic performance and benefit in-depth fundamental studies of the physical properties of these materials. Halide perovskites have emerged as a new family of promising and cost-effective semiconductor materials for next-generation high-power conversion efficiency photovoltaics and for versatile high-performance optoelectronics, such as light-emitting diodes, lasers, photodetectors, and high-energy radiation imaging and detectors. In this Review, we summarize the advances in the fabrication of halide perovskite nanostructures and thin films with controlled dimensionality and crystallographic orientation, along with their applications and performance characteristics in optoelectronics. We examine the growth methods, mechanisms, and fabrication strategies for several technologically relevant structures, including nanowires, nanoplates, nanostructure arrays, single-crystal thin films, and highly oriented thin films. We highlight and discuss the advantageous photophysical properties and remarkable performance characteristics of oriented nanostructures and thin films for optoelectronics. Finally, we survey the remaining challenges and provide a perspective regarding the opportunities for further progress in this field.

Direct deposition of Sn-doped CsPbBr3 perovskite for efficient solar cell application

All inorganic carbon-based planar perovskites, particularly CsPbBr3, have attracted considerable attention due to their excellent stability against oxygen, moisture, and heat for photovoltaic utilization. However, the power conversion efficiency of carbon-based planar CsPbBr3 perovskite solar cells is mostly low, primarily because of the inferior film quality with undesirable crystallization and narrow light absorbance ranges. Herein, we develop a novel direct deposition approach combined with Sn doping to achieve highly efficient and stable carbon-based Sn-doped CsPbBr3 perovskite solar cells. Mass-scale Sn ion-doped CsPbBr3 perovskite powder was effectively synthesized and characterized via a facile strategy by adding hydrohalic acid in the CsBr, PbBr2 and SnBr2 precursor in a dimethyl sulfoxide solution. Moreover, using the as-synthesized CsPbBr3 and Sn-doped CsPbBr3 perovskite powder, PSCs were obtained via effective direct thermal evaporation. A smooth, constant and pinhole-free perovskite film was achieved with a configuration of FTO/TiO2/Sn:CsPbBr3/carbon. PSCs based on Sn:CsPbBr3 as an absorber and carbon as the HTM achieved an impressive power conversion efficiency of 8.95% compared to 6.87% for undoped CsPbBr3; moreover, it displayed admirable stability in an open-air atmosphere for an operational period of about 720 h without a noticeable negative result. The introduction of the Sn ion may advance the interface extraction of charge between the electric transport layer to the absorber layer and absorber to the carbon electrode. Accordingly, the Sn ion doping on CsPbBr3 during the synthesis phase and the direct evaporation paves a novel approach for intended photovoltaic applications.