Proton Conducting Perhydropolysilazane-Derived Gate Dielectric for Solution-Processed Metal Oxide-Based Thin-Film Transistors

Recent Progress in Thin-Film Transistors toward Digital, Analog, and Functional Circuits

Thin-film transistors have been extensively developed due to their process merit: high compatibility with various substrates, large-area processes, and low-cost processes. Despite these advantages, most efforts for thin-film transistors still remain at the level of unit devices, so the circuit level for practical use needs to be further developed. In this regard, this review revisits digital and analog thin-film circuits using carbon nanotubes (CNTs), organic electrochemical transistors (OECTs), organic semiconductors, metal oxides, and two-dimensional materials. This review also discusses how to integrate thin-film circuits at the unit device level and some key issues such as metal routing and interconnection. Challenges and opportunities are also discussed to pave the way for developing thin-film circuits and their practical applications.

Resistance Switching Behavior of a Perhydropolysilazane-Derived SiOx-Based Memristor

SiO_x is an important dielectric material layer for resistive switching memory due to its compatibility with complementary metal-oxide semiconductor (CMOS) technology. Here we propose a solution process for a SiO_x dielectric layer based on perhydropolysilazane (PHPS). A series of SiO_x layers with different compositions are prepared by controlling the conversion process from PHPS, then the resistance switching behaviors of typical Ag/SiO_x/Au memristors are analyzed. The effect of oxygen vacancies and Si-OH groups on the formation and rupture of Ag conducting filaments (CFs) in the SiO_x layer was thoroughly investigated. Ultimately, we achieved a high-performance memristor with a coefficient of variation (σ/μ) as low as 0.16 ± 0.08 and an on/off ratio as high as 10⁶, which can rival the performance of the SiO_x memristors based on the high-vacuum and high-cost vapor deposition methods. These findings demonstrate the high promise of the PHPS-derived SiO_x dielectric layer in the field of memristors.

Flexible Hard Coatings with Self-Evolution Behavior in a Low Earth Orbit Environment

Lightweight, long lifetime, and flexible polymer membrane-based structures, which are tightly folded on the ground and then unfolded in space, suffer from repeated bending before launching and fatal erosion on exposure to atomic oxygen (AO) in a low Earth orbit (LEO). Although various AO-resistant coatings have been developed, a coating that can simultaneously meet the critical requirements for the mechanical robustness and long-term protection of polymer membranes is rare. Here, we fabricated a coating with mechanical robustness and long-term space endurance, starting from an inorganic polymer precursor. A hybrid coating with a nanoscale polymer/silica bicontinuous phase is first prepared on the ground, which exhibits outstanding flexibility and excellent abrasion resistance. Then, the coating shows an in situ self-evolution behavior under AO and ultraviolet (UV) synergism to afford dense and crack-free silica coating with outstanding endurance. Our strategy displays great potential for protecting deployable membrane structures serving in the LEO.

Layer-By-Layer Printing Strategy for High-Performance Flexible Electronic Devices with Low-Temperature Catalyzed Solution-Processed SiO2

Additive printing techniques have been widely investigated for fabricating multilayered electronic devices. In this work, a layer-by-layer printing strategy is developed to fabricate multilayered electronics including 3D conductive circuits and thin-film transistors (TFTs) with low-temperature catalyzed, solution-processed SiO₂ (LCSS) as the dielectric. Ultrafine, ultrasmooth LCSS films can be facilely formed at 90 °C on a wide variety of organic and inorganic substrates, offering a versatile platform to construct complex heterojunction structures with layer-by-layer fashion at microscale. The high-resolution 3D conductive circuits formed with gold nanoparticles inside the LCSS dielectric demonstrate a high-speed response to the transient voltage in less than 1 µs. The TFTs with semiconducting single-wall carbon nanotubes can be operated with the accumulation mode at a low voltage of 1 V and exhibit average field-effect mobility of 70 cm²  V^-1  s^-1 , on/off ratio of 10⁷ , small average hysteresis of 0.1 V, and high yield up to 100% as well as long-term stability, high negative-gate bias stability, and good mechanical stability. Therefore, the layer-by-layer printing strategy with the LCSS film is promising to assemble large-scale, high-resolution, and high-performance flexible electronics and to provide a fundamental understanding for correlating dielectric properties with device performance.

Surface-Mediated Construction of an Ultrathin Free-Standing Covalent Organic Framework Membrane for Efficient Proton Conduction

As a new class of crystalline porous organic materials, covalent organic frameworks (COFs) have attracted considerable attention for proton conduction owing to their regular channels and tailored functionality. However, most COFs are insoluble and unprocessable, which makes membrane preparation for practical use a challenge. In this study, we used surface-initiated condensation polymerization of a trialdehyde and a phenylenediamine for the synthesis of sulfonic COF (SCOF) coatings. The COF layer thickness could be finely tuned from 10 to 100 nm by controlling the polymerization time. Moreover, free-standing COF membranes were obtained by sacrificing the bridging layer without any decomposition of the COF structure. Benefiting from the abundant sulfonic acid groups in the COF channels, the proton conductivity of the SCOF membrane reached 0.54 S cm^-1 at 80 °C in pure water. To our knowledge, this is one of the highest values for a pristine COF membrane in the absence of additional additives.

Room-Temperature, Solution-Processed SiOx via Photochemistry Approach for Highly Flexible Resistive Switching Memory

Due to its high versatility and cost-effectiveness, solution process has a remarkable advantage over physical or chemical vapor deposition (PVD/CVD) methods in developing flexible resistive random-access memory (RRAM) devices. However, the reported solution-processed binary oxides, the most promising active layer materials for their compatibility with silicon-based semiconductor technology, commonly require high-temperature annealing (>145 °C) and the RRAMs based on them encounter insufficient flexibility. In this work, an amorphous and uniform SiO_x active layer was prepared by irradiating an inorganic polymer, perhydropolysilazane, with a vacuum ultraviolet of 172 nm at room temperature. The corresponding RRAM showed typical bipolar resistance switching with a forming-free behavior. The device on polyimide film exhibited outstanding flexibility with a minimum bending radius of 0.5 mm, and no performance degradation was observed after bending 2000 times with a radius of 2.3 mm, which is the best among the reported solution-processed binary oxide-based RRAMs and can even rival the performance of PVD/CVD-based devices. This room-temperature solution process and the afforded highly flexible RRAMs have vast prospects for application in smart wearable electronics.