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Arata Y, Nishinaka H, Takeda M, Kanegae K, Yoshimoto M. Strain-Induced Modulation of Resistive Switching Temperature in Epitaxial VO 2 Thin Films on Flexible Synthetic Mica. ACS OMEGA 2022; 7:41768-41774. [PMID: 36406563 PMCID: PMC9670360 DOI: 10.1021/acsomega.2c06062] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 09/19/2022] [Accepted: 10/21/2022] [Indexed: 06/16/2023]
Abstract
The resistive switching temperature associated with the metal-insulator transition (MIT) of epitaxial VO2 thin films grown on flexible synthetic mica was modulated by bending stress. The resistive switching temperature of polycrystalline VO2 and V2O5 thin films, initially grown on synthetic mica without a buffer layer, was observed not to shift with bending stress. By inserting a SnO2 buffer layer, epitaxial growth of the VO2 (010) thin film was achieved, and the MIT temperature was found to vary with the bending stress. Thus, it was revealed that the bending response of the VO2 thin film depends on the presence or absence of the SnO2 buffer layer. The bending stress applied a maximum in-plane tensile strain of 0.077%, resulting in a high-temperature shift of 2.3 °C during heating and 1.8 °C during cooling. After 104 bending cycles at a radius of curvature R = 10 mm, it was demonstrated that the epitaxial VO2 thin film exhibits resistive switching temperature associated with MIT.
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Affiliation(s)
- Yuta Arata
- Department
of Electronics, Kyoto Institute of Technology, Matsugasaki, Sakyo-ku, Kyoto606-8585, Japan
| | - Hiroyuki Nishinaka
- Faculty
of Electrical Engineering and Electronics, Kyoto Institute of Technology, Matsugasaki,
Sakyo-ku, Kyoto606-8585, Japan
| | - Minoru Takeda
- Faculty
of Electrical Engineering and Electronics, Kyoto Institute of Technology, Matsugasaki,
Sakyo-ku, Kyoto606-8585, Japan
| | - Kazutaka Kanegae
- Faculty
of Electrical Engineering and Electronics, Kyoto Institute of Technology, Matsugasaki,
Sakyo-ku, Kyoto606-8585, Japan
| | - Masahiro Yoshimoto
- Faculty
of Electrical Engineering and Electronics, Kyoto Institute of Technology, Matsugasaki,
Sakyo-ku, Kyoto606-8585, Japan
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Que M, Lin C, Sun J, Chen L, Sun X, Sun Y. Progress in ZnO Nanosensors. SENSORS 2021; 21:s21165502. [PMID: 34450944 PMCID: PMC8401939 DOI: 10.3390/s21165502] [Citation(s) in RCA: 15] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/29/2021] [Revised: 08/05/2021] [Accepted: 08/12/2021] [Indexed: 12/28/2022]
Abstract
Developing various nanosensors with superior performance for accurate and sensitive detection of some physical signals is essential for advances in electronic systems. Zinc oxide (ZnO) is a unique semiconductor material with wide bandgap (3.37 eV) and high exciton binding energy (60 meV) at room temperature. ZnO nanostructures have been investigated extensively for possible use as high-performance sensors, due to their excellent optical, piezoelectric and electrochemical properties, as well as the large surface area. In this review, we primarily introduce the morphology and major synthetic methods of ZnO nanomaterials, with a brief discussion of the advantages and weaknesses of each method. Then, we mainly focus on the recent progress in ZnO nanosensors according to the functional classification, including pressure sensor, gas sensor, photoelectric sensor, biosensor and temperature sensor. We provide a comprehensive analysis of the research status and constraints for the development of ZnO nanosensor in each category. Finally, the challenges and future research directions of nanosensors based on ZnO are prospected and summarized. It is of profound significance to research ZnO nanosensors in depth, which will promote the development of artificial intelligence, medical and health, as well as industrial, production.
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Affiliation(s)
- Miaoling Que
- College of Electronic and Information Engineering, Suzhou University of Science and Technology, Suzhou 215009, China; (M.Q.); (J.S.); (L.C.); (X.S.)
| | - Chong Lin
- Jiangxi Province Key Laboratory of Polymer Micro/Nano Manufacturing and Devices, School of Chemistry, Biology and Materials Science, East China University of Technology, Nanchang 330013, China;
| | - Jiawei Sun
- College of Electronic and Information Engineering, Suzhou University of Science and Technology, Suzhou 215009, China; (M.Q.); (J.S.); (L.C.); (X.S.)
| | - Lixiang Chen
- College of Electronic and Information Engineering, Suzhou University of Science and Technology, Suzhou 215009, China; (M.Q.); (J.S.); (L.C.); (X.S.)
| | - Xiaohong Sun
- College of Electronic and Information Engineering, Suzhou University of Science and Technology, Suzhou 215009, China; (M.Q.); (J.S.); (L.C.); (X.S.)
| | - Yunfei Sun
- College of Electronic and Information Engineering, Suzhou University of Science and Technology, Suzhou 215009, China; (M.Q.); (J.S.); (L.C.); (X.S.)
- Correspondence:
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Chen YC, Tu YH, Chen LW, Lai YH, Tsai MF, Lin YX, Lai HC, Chiang CY, Liu HJ, Pan HC, Yang TY, Zhang D, Seidel J, Wu JM, Chueh YL, Chang WH, Ku CS, Chen SH, Chang L, Chu YH. Fabrication of Large-Scale High-Mobility Flexible Transparent Zinc Oxide Single Crystal Wafers. ACS APPLIED MATERIALS & INTERFACES 2021; 13:18991-18998. [PMID: 33851818 DOI: 10.1021/acsami.1c01782] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Single crystal wafers, such as silicon, are the fundamental carriers of advanced electronic devices. However, these wafers exhibit rigidity without mechanical flexibility, limiting their applications in flexible electronics. Here, we propose a new approach to fabricate 1.5 in. flexible functional zinc oxide (ZnO) single crystal wafers with high electron mobility (>100 cm2 V-1 s-1) and optical transparency (>80%) by a combination of thin-film deposition, a chemical solution method, and surficial treatment. The uniformity of the flexible single crystal wafers is examined by an advanced scanning X-ray diffraction technique and photoluminescence spectroscopy. The transport properties of ZnO flexible single crystal wafers retain their pristine states under various bending conditions, including cyclability and endurability. This approach demonstrates a breakthrough in the fabrication of the flexible single crystal wafers for future flexible optoelectronic applications.
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Affiliation(s)
- Yi-Cheng Chen
- Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan
| | - Yu-Hao Tu
- Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan
| | - Li-Wei Chen
- Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan
| | - Yu-Hong Lai
- Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan
| | - Meng-Fu Tsai
- Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan
| | - Ying-Xiu Lin
- Department of Mechanical Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan
| | - Hou-Chou Lai
- Department of Mechanical Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan
| | - Ching-Yu Chiang
- National Synchrotron Radiation Research Center, Hsinchu 30010, Taiwan
| | - Heng-Jui Liu
- Department of Materials Science and Engineering, National Chung Hsing University, Taichung 402, Taiwan
| | - Hsin-Che Pan
- Department of Electrophysics, National Chiao Tung University, Hsinchu 30010, Taiwan
| | - Tzu-Yi Yang
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
- Frontier Research Center on Fundamental and Applied Sciences of Matters, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Dawei Zhang
- School of Materials Science and Engineering, University of New South Wales, Sydney 2052, Australia
| | - Jan Seidel
- School of Materials Science and Engineering, University of New South Wales, Sydney 2052, Australia
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), UNSW Sydney, Sydney 2052, Australia
| | - Jyh-Ming Wu
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Yu-Lun Chueh
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
- Frontier Research Center on Fundamental and Applied Sciences of Matters, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Wen-Hao Chang
- Department of Electrophysics, National Chiao Tung University, Hsinchu 30010, Taiwan
- Center for Emergent Functional Matter Science, National Chiao Tung University, Hsinchu 30010, Taiwan
| | - Ching-Shun Ku
- National Synchrotron Radiation Research Center, Hsinchu 30010, Taiwan
| | - Shih-Hsun Chen
- Department of Mechanical Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan
| | - Li Chang
- Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan
| | - Ying-Hao Chu
- Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan
- Department of Electrophysics, National Chiao Tung University, Hsinchu 30010, Taiwan
- Center for Emergent Functional Matter Science, National Chiao Tung University, Hsinchu 30010, Taiwan
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Bitla Y, Chu YH. van der Waals oxide heteroepitaxy for soft transparent electronics. NANOSCALE 2020; 12:18523-18544. [PMID: 32909023 DOI: 10.1039/d0nr04219f] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The quest for multifunctional, low-power and environment friendly electronics has brought research on materials to the forefront. For instance, as the emerging field of transparent flexible electronics is set to greatly impact our daily lives, more stringent requirements are being imposed on functional materials. Inherently flexible polymers and metal foil templates have yielded limited success due to their incompatible high-temperature growth and non-transparency, respectively. Although the epitaxial-transfer strategy has shown promising results, it suffers from tedious and complicated lift-off-transfer processes. The advent of graphene, in particular, and 2D layered materials, in general, with ultrathin scalability has revolutionized this field. Herein, we review the direct growth of epitaxial functional oxides on flexible transparent mica substrates via van der Waals heteroepitaxy, which mitigates misfit strain and substrate clamping for soft transparent electronics applications. Recent advances in practical applications of flexible and transparent electronic elements are discussed. Finally, several important directions, challenges and perspectives for commercialization are also outlined. We anticipate that this promising strategy to build transparent flexible optoelectronic devices and improve their performance will open up new avenues for researchers to explore.
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Affiliation(s)
- Yugandhar Bitla
- Department of Physics, School of Physical Sciences, Central University of Rajasthan, Ajmer 305817, India
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