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Guo J, Gu S, Lin L, Liu Y, Cai J, Cai H, Tian Y, Zhang Y, Zhang Q, Liu Z, Zhang Y, Zhang X, Lin Y, Huang W, Gu L, Zhang J. Type-printable photodetector arrays for multichannel meta-infrared imaging. Nat Commun 2024; 15:5193. [PMID: 38890366 PMCID: PMC11189553 DOI: 10.1038/s41467-024-49592-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/11/2024] [Accepted: 06/12/2024] [Indexed: 06/20/2024] Open
Abstract
Multichannel meta-imaging, inspired by the parallel-processing capability of neuromorphic computing, offers considerable advancements in resolution enhancement and edge discrimination in imaging systems, extending even into the mid- to far-infrared spectrum. Currently typical multichannel infrared imaging systems consist of separating optical gratings or merging multi-cameras, which require complex circuit design and heavy power consumption, hindering the implementation of advanced human-eye-like imagers. Here, we present printable graphene plasmonic photodetector arrays driven by a ferroelectric superdomain for multichannel meta-infrared imaging with enhanced edge discrimination. The fabricated photodetectors exhibited multiple spectral responses with zero-bias operation by directly rescaling the ferroelectric superdomain instead of reconstructing the separated gratings. We also demonstrated enhanced and faster shape classification (98.1%) and edge detection (98.2%) using our multichannel infrared images compared with single-channel detectors. Our proof-of-concept photodetector arrays simplify multichannel infrared imaging systems and offer potential solutions in efficient edge detection in human-brain-type machine vision.
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Affiliation(s)
- Junxiong Guo
- School of Electronic Information and Electrical Engineering, Institute of Advanced Study, Chengdu University, Chengdu, 610106, China.
- School of Integrated Circuit Science and Engineering, National Exemplary School of Microelectronics, University of Electronic Science and Technology of China, Chengdu, 610054, China.
| | - Shuyi Gu
- School of Electronic Information and Electrical Engineering, Institute of Advanced Study, Chengdu University, Chengdu, 610106, China
| | - Lin Lin
- School of Integrated Circuit Science and Engineering, National Exemplary School of Microelectronics, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Yu Liu
- School of Integrated Circuits, Tsinghua University, Beijing, 100084, China.
- College of Integrated Circuit Science and Engineering, National and Local Joint Engineering Laboratory for RF Integration and Micro-Packing Technologies, Nanjing University of Posts and Telecommunications, Nanjing, 210023, China.
| | - Ji Cai
- School of Electronic Information and Electrical Engineering, Institute of Advanced Study, Chengdu University, Chengdu, 610106, China
| | - Hongyi Cai
- School of Electronic Information and Electrical Engineering, Institute of Advanced Study, Chengdu University, Chengdu, 610106, China
| | - Yu Tian
- School of Physics and Astronomy, Beijing Normal University, Beijing, 100875, China
- Key Laboratory of Multiscale Spin Physics, Ministry of Education, Beijing, 100875, China
| | - Yuelin Zhang
- School of Physics and Astronomy, Beijing Normal University, Beijing, 100875, China
- Key Laboratory of Multiscale Spin Physics, Ministry of Education, Beijing, 100875, China
| | - Qinghua Zhang
- Institute of Physics, Chinese Academy of Science, Beijing National Laboratory of Condensed Matter Physics, Beijing, 100190, China
| | - Ze Liu
- School of Electronic Information and Electrical Engineering, Institute of Advanced Study, Chengdu University, Chengdu, 610106, China
| | - Yafei Zhang
- School of Electronic Information and Electrical Engineering, Institute of Advanced Study, Chengdu University, Chengdu, 610106, China
| | - Xiaosheng Zhang
- School of Integrated Circuit Science and Engineering, National Exemplary School of Microelectronics, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Yuan Lin
- School of Materials and Energy, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Wen Huang
- School of Integrated Circuit Science and Engineering, National Exemplary School of Microelectronics, University of Electronic Science and Technology of China, Chengdu, 610054, China.
| | - Lin Gu
- School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Jinxing Zhang
- School of Physics and Astronomy, Beijing Normal University, Beijing, 100875, China.
- Key Laboratory of Multiscale Spin Physics, Ministry of Education, Beijing, 100875, China.
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2
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Strain Engineering of Domain Coexistence in Epitaxial Lead-Titanite Thin Films. COATINGS 2022. [DOI: 10.3390/coatings12040542] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/10/2022]
Abstract
Phase and domain structures in ferroelectric materials play a vital role in determining their dielectric and piezoelectric properties. Ferroelectric thin films with coexisting multiple domains or phases often have fascinating high sensitivity and ultrahigh physical properties. However, the control of the coexisting multiple domains is still challenging, thus necessitating the theoretical prediction. Here, we studied the phase coexistence and the domain morphology of PbTiO3 epitaxial films by using a Landau–Devonshire phenomenological model and canonic statistical method. Results show that PbTiO3 films can exist in multiple domain structures that can be diversified by the substrates with different misfit strains. Experimental results for PbTiO3 epitaxial films on different substrates are in good accordance with the theoretical prediction, which shows an alternative way for further manipulation of the ferroelectric domain structures.
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Dai C, Stoica VA, Das S, Hong Z, Martin LW, Ramesh R, Freeland JW, Wen H, Gopalan V, Chen LQ. Tunable Nanoscale Evolution and Topological Phase Transitions of a Polar Vortex Supercrystal. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2106401. [PMID: 34958699 DOI: 10.1002/adma.202106401] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/15/2021] [Revised: 12/03/2021] [Indexed: 06/14/2023]
Abstract
Understanding the phase transitions and domain evolutions of mesoscale topological structures in ferroic materials is critical to realizing their potential applications in next-generation high-performance storage devices. Here, the behaviors of a mesoscale supercrystal are studied with 3D nanoscale periodicity and rotational topology phases in a PbTiO3 /SrTiO3 (PTO/STO) superlattice under thermal and electrical stimuli using a combination of phase-field simulations and X-ray diffraction experiments. A phase diagram of temperature versus polar state is constructed, showing the formation of the supercrystal from a mixed vortex and a-twin state and a temperature-dependent erasing process of a supercrystal returning to a classical a-twin structure. Under an in-plane electric field bias at room temperature, the vortex topology of the supercrystal irreversibly transforms to a new type of stripe-like supercrystal. Under an out-of-plane electric field, the vortices inside the supercrystal undergo a topological phase transition to polar skyrmions. These results demonstrate the potential for the on-demand manipulation of polar topology and transformations in supercrystals using electric fields. The findings provide a theoretical understanding that may be utilized to guide the design and control of mesoscale polar structures and to explore novel polar structures in other systems and their topological nature.
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Affiliation(s)
- Cheng Dai
- Department of Materials Science and Engineering and Materials Research Institute, Pennsylvania State University, University Park, PA, 16802, USA
| | - Vladimir Alexandru Stoica
- Department of Materials Science and Engineering and Materials Research Institute, Pennsylvania State University, University Park, PA, 16802, USA
- Advanced Photon Source, Argonne National Laboratory, Argonne, IL, 60439, USA
| | - Sujit Das
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
| | - Zijian Hong
- Lab of Dielectric Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Lane W Martin
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Ramamoorthy Ramesh
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
| | - John W Freeland
- Advanced Photon Source, Argonne National Laboratory, Argonne, IL, 60439, USA
| | - Haidan Wen
- Advanced Photon Source, Argonne National Laboratory, Argonne, IL, 60439, USA
- Materials Science Division, Argonne National Laboratory, Argonne, IL, 60439, USA
| | - Venkatraman Gopalan
- Department of Materials Science and Engineering and Materials Research Institute, Pennsylvania State University, University Park, PA, 16802, USA
| | - Long-Qing Chen
- Department of Materials Science and Engineering and Materials Research Institute, Pennsylvania State University, University Park, PA, 16802, USA
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4
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Bugallo D, Langenberg E, Ferreiro-Vila E, Smith EH, Stefani C, Batlle X, Catalan G, Domingo N, Schlom DG, Rivadulla F. Deconvolution of Phonon Scattering by Ferroelectric Domain Walls and Point Defects in a PbTiO 3 Thin Film Deposited in a Composition-Spread Geometry. ACS APPLIED MATERIALS & INTERFACES 2021; 13:45679-45685. [PMID: 34523338 DOI: 10.1021/acsami.1c08758] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
We present a detailed analysis of the temperature dependence of the thermal conductivity of a ferroelectric PbTiO3 thin film deposited in a composition-spread geometry enabling a continuous range of compositions from ∼25% titanium deficient to ∼20% titanium rich to be studied. By fitting the experimental results to the Debye model we deconvolute and quantify the two main phonon-scattering sources in the system: ferroelectric domain walls (DWs) and point defects. Our results prove that ferroelectric DWs are the main agent limiting the thermal conductivity in this system, not only in the stoichiometric region of the thin film ([Pb]/[Ti] ≈ 1) but also when the concentration of the cation point defects is significant (up to ∼15%). Hence, DWs in ferroelectric materials are a source of phonon scattering at least as effective as point defects. Our results demonstrate the viability and effectiveness of using reconfigurable DWs to control the thermal conductivity in solid-state devices.
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Affiliation(s)
- David Bugallo
- Centro Singular de Investigación en Química Biolóxica e Materiais Moleculares (CiQUS), Departamento de Química-Física, Universidade de Santiago de Compostela, Santiago de Compostela 15782, Spain
| | - Eric Langenberg
- Centro Singular de Investigación en Química Biolóxica e Materiais Moleculares (CiQUS), Departamento de Química-Física, Universidade de Santiago de Compostela, Santiago de Compostela 15782, Spain
- Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, United States
- Department de Física de la Matèria Condensada and Institut de Nanociència i Nanotecnologia (IN2UB), Universitat de Barcelona, Barcelona 08028, Spain
| | - Elias Ferreiro-Vila
- Centro Singular de Investigación en Química Biolóxica e Materiais Moleculares (CiQUS), Departamento de Química-Física, Universidade de Santiago de Compostela, Santiago de Compostela 15782, Spain
| | - Eva H Smith
- Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, United States
| | - Christina Stefani
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC, Barcelona Institute of Science and Technology, Campus Universitat Autònoma de Barcelona, Bellaterra, Barcelona 08193 Spain
| | - Xavier Batlle
- Department de Física de la Matèria Condensada and Institut de Nanociència i Nanotecnologia (IN2UB), Universitat de Barcelona, Barcelona 08028, Spain
| | - Gustau Catalan
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC, Barcelona Institute of Science and Technology, Campus Universitat Autònoma de Barcelona, Bellaterra, Barcelona 08193 Spain
| | - Neus Domingo
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC, Barcelona Institute of Science and Technology, Campus Universitat Autònoma de Barcelona, Bellaterra, Barcelona 08193 Spain
| | - Darrell G Schlom
- Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, United States
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853, United States
- Leibniz-Institut für Kristallzüchtung, Max-Born-Strasse 2, 12489 Berlin, Germany
| | - Francisco Rivadulla
- Centro Singular de Investigación en Química Biolóxica e Materiais Moleculares (CiQUS), Departamento de Química-Física, Universidade de Santiago de Compostela, Santiago de Compostela 15782, Spain
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5
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Langenberg E, Maurel L, Antorrena G, Algarabel PA, Magén C, Pardo JA. Relaxation Mechanisms and Strain-Controlled Oxygen Vacancies in Epitaxial SrMnO 3 Films. ACS OMEGA 2021; 6:13144-13152. [PMID: 34056464 PMCID: PMC8158829 DOI: 10.1021/acsomega.1c00953] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/22/2021] [Accepted: 03/31/2021] [Indexed: 06/12/2023]
Abstract
SrMnO3 has a rich epitaxial strain-dependent ferroic phase diagram, in which a variety of magnetic orderings, even ferroelectricity, and thus multiferroicity, are accessible by gradually modifying the strain. Different relaxation processes, though, including the presence of strain-induced oxygen vacancies, can severely curtail the possibility of stabilizing these ferroic phases. Here, we report on a thorough investigation of the strain relaxation mechanisms in SrMnO3 films grown on several substrates imposing varying degrees of strain from slightly compressive (-0.39%) to largely tensile ≈+3.8%. First, we determine the strain dependency of the critical thickness (t c) below which pseudomorphic growth is obtained. Second, the mechanisms of stress relaxation are elucidated, revealing that misfit dislocations and stacking faults accommodate the strain above t c. Yet, even for films thicker than t c, the atomic monolayers below t c are proved to remain fully coherent. Therefore, multiferroicity may also emerge even in films that appear to be partially relaxed. Last, we demonstrate that fully coherent films with the same thickness present a lower oxygen content for increasing tensile mismatch with the substrate. This behavior proves the coupling between the formation of oxygen vacancies and epitaxial strain, in agreement with first-principles calculations, enabling the strain control of the Mn3+/Mn4+ ratio, which strongly affects the magnetic and electrical properties. However, the presence of oxygen vacancies/Mn3+ cations reduces the effective epitaxial strain in the SrMnO3 films and, thus, the accessibility to the strain-induced multiferroic phase.
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Affiliation(s)
- Eric Langenberg
- Instituto
de Nanociencia y Materiales de Aragón (INMA), CSIC-Universidad de Zaragoza, C/Pedro Cerbuna 12, 50009 Zaragoza, Spain
- Departamento
de Física de la Materia Condensada, Universidad de Zaragoza, C/Pedro Cerbuna 12, 50009 Zaragoza, Spain
| | - Laura Maurel
- Instituto
de Nanociencia y Materiales de Aragón (INMA), CSIC-Universidad de Zaragoza, C/Pedro Cerbuna 12, 50009 Zaragoza, Spain
| | - Guillermo Antorrena
- Laboratorio
de Microscopías Avanzadas, Universidad
de Zaragoza, C/Mariano
Esquillor s/n, 50018 Zaragoza, Spain
| | - Pedro A. Algarabel
- Instituto
de Nanociencia y Materiales de Aragón (INMA), CSIC-Universidad de Zaragoza, C/Pedro Cerbuna 12, 50009 Zaragoza, Spain
- Departamento
de Física de la Materia Condensada, Universidad de Zaragoza, C/Pedro Cerbuna 12, 50009 Zaragoza, Spain
| | - César Magén
- Instituto
de Nanociencia y Materiales de Aragón (INMA), CSIC-Universidad de Zaragoza, C/Pedro Cerbuna 12, 50009 Zaragoza, Spain
- Departamento
de Física de la Materia Condensada, Universidad de Zaragoza, C/Pedro Cerbuna 12, 50009 Zaragoza, Spain
- Laboratorio
de Microscopías Avanzadas, Universidad
de Zaragoza, C/Mariano
Esquillor s/n, 50018 Zaragoza, Spain
| | - José A. Pardo
- Instituto
de Nanociencia y Materiales de Aragón (INMA), CSIC-Universidad de Zaragoza, C/Pedro Cerbuna 12, 50009 Zaragoza, Spain
- Laboratorio
de Microscopías Avanzadas, Universidad
de Zaragoza, C/Mariano
Esquillor s/n, 50018 Zaragoza, Spain
- Departamento
de Ciencia y Tecnología de Materiales y Fluidos, Universidad de Zaragoza, C/María de Luna 3, 50018 Zaragoza, Spain
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