Reversible Transformation between Bipolar Memory Switching and Bidirectional Threshold Switching in 2D Layered K-Birnessite Nanosheets

A review on the transformation of birnessite in the environment: Implication for the stabilization of heavy metals

Birnessite is ubiquitous in the natural environment where heavy metals are retained and easily transformed. The surface properties and structure of birnessite change with the changes in external environmental conditions, which also affects the fate of heavy metals. Clarifying the effect and mechanism of the birnessite phase transition process on heavy metals is the key to taking effective measures to prevent and control heavy metal pollution. Therefore, the four transformation pathways of birnessite are summarized first in this review. Second, the relationship between transformation pathways and environmental conditions is proposed. These relevant environmental conditions include abiotic (e.g., co-existing ions, pH, oxygen pressure, temperature, electric field, light, aging, pressure) and biotic factors (e.g., microorganisms, biomolecules). The phase transformation is achieved by the key intermediate of Mn(III) through interlayer-condensation, folding, neutralization-disproportionation, and dissolution-recrystallization mechanisms. The AOS (average oxidation state) of Mn and interlayer spacing are closely correlated with the phase transformation of birnessite. Last but not least, the mechanisms of heavy metals immobilization in the transformation process of birnessite are summed up. They involve isomorphous substitution, redox, complexation, hydration/dehydration, etc. The transformation of birnessite and its implication on heavy metals will be helpful for understanding and predicting the behavior of heavy metals and the crucial phase of manganese oxides/hydroxides in natural and engineered environments.

Controllable digital and analog resistive switching behavior of 2D layered WSe2 nanosheets for neuromorphic computing

Memristors with controllable resistive switching (RS) behavior have been considered as promising candidates for synaptic devices in next-generation neuromorphic computing. In this work, two-terminal memristors with controllable digital and analog RS behavior are fabricated based on two-dimensional (2D) WSe₂ nanosheets. Under a relatively high operating voltage of 4 V, the memristor demonstrates stable and reliable non-volatile bipolar digital RS with a high switching ratio of 6.3 × 10⁴. On the other hand, under a relatively low operation voltage, the memristor exhibits analog RS with a series of tunable resistance states. The fabricated memristors can work as an artificial synapse with fundamental synaptic functions, such as long-term potentiation (LTP) and depression (LTD) as well as paired-pulse facilitation (PPF). More importantly, the memristor demonstrates high conductance modulation linearity with the calculated nonlinear parameter for conductance as -0.82 in the LTP process, which is beneficial to improving the accuracy of neuromorphic computing. Furthermore, the neuromorphic computing of file types and image recognition can be emulated based on a constructed three-layer artificial neural network (ANN) with a recognition accuracy that can reach up to 95.9% for small digits. In addition, memristors can be used to emulate the learning-forgetting experience of the human brain. Consequently, the memristor based on 2D WSe₂ nanosheets not only exhibits controllable RS behavior but also simulates synaptic functions and is expected to be a potential candidate for future neuromorphic computing applications.

Resistive Switching Crossbar Arrays Based on Layered Materials

Resistive switching (RS) devices are metal/insulator/metal cells that can change their electrical resistance when electrical stimuli are applied between the electrodes, and they can be used to store and compute data. Planar crossbar arrays of RS devices can offer a high integration density (>10⁸  devices mm^{- 2} ) and this can be further enhanced by stacking them three-dimensionally. The advantage of using layered materials (LMs) in RS devices compared to traditional phase-change materials and metal oxides is that their electrical properties can be adjusted with a higher precision. Here, the key figures-of-merit and procedures to implement LM-based RS devices are defined. LM-based RS devices fabricated using methods compatible with industry are identified and discussed. The focus is on small devices (size < 9 µm² ) arranged in crossbar structures, since larger devices may be affected by artifacts, such as grain boundaries and flake junctions. How to enhance device performance, so to accelerate the development of this technology, is also discussed.

Amyloid-Gold Nanoparticle Hybrids for Biocompatible Memristive Devices

Biomolecular materials offer tremendous potential for the development of memristive devices due to their low cost of production, environmental friendliness, and, most notably, biocompatibility. Herein, biocompatible memristive devices based on amyloid-gold nanoparticle hybrids have been investigated. These memristors demonstrate excellent electrical performance, featuring an ultrahigh R_off/R_on ratio (>10⁷), a low switching voltage (<0.8 V), and reliable reproducibility. Additionally, the reversible transition from threshold switching to resistive switching mode was achieved in this work. The arrangement of peptides in amyloid fibrils endows the surface polarity and phenylalanine packing, which provides channels for the migration of Ag ions in the memristors. By modulating voltage pulse signals, the study successfully imitates the synaptic behavior of excitatory postsynaptic current (EPSC), paired-pulse facilitation (PPF), and the transition from short-term plasticity (STP) to long-term plasticity (LTP). More interestingly, Boolean logic standard cells were designed and simulated using the memristive devices. The fundamental and experimental results of this study thus offer insights into the utilization of biomolecular materials for advanced memristive devices.

Visualization the fixation of cadmium on manganese dioxide in sulfur reduction environments

Manganese oxides as common soil components were considered as an important sink for the cadmium pollution, which, however, would be affected by the reductive sulfide introduced during the flooding period of paddy soil. In this study, the phase transitions caused by the reactions among S^2-, MnO₂ and Cd²⁺ were visualized by atomic force microscopy (AFM). The dissolution of MnO₂ was in-situ studied by AFM in the S^2-containing environments. Moreover, in the ternary system (S^2-, MnO₂ and Cd²⁺), the pre-adsorption of Cd²⁺ by the MnO₂ nanosheets would promote the subsequent precipitation of CdS on the surface of MnO₂, while the pre-formed CdS nanoparticles in the aquatic phase would tend to suspense rather than precipitating on MnO₂. The kinetic study results indicated that the CdS crystallite generation rate was faster than the MnO₂ dissolution rate in the aquatic environments with different sulfide contents. In the macroscopic Cd²⁺ fixation test, the introduction of S^2- dramatically improved the fixation of the pre-adsorbed Cd²⁺ on the MnO₂ nanosheets by forming the CdS precipitate. This study provided a fundamental understanding of the interactions among the S^2-, MnO₂ and Cd²⁺ ternary system and shed light on the development of Cd pollution remediation methods for paddy soils.

Memristor Based on Inorganic and Organic Two-Dimensional Materials: Mechanisms, Performance, and Synaptic Applications

A memristor is a two-terminal device with nonvolatile resistive switching (RS) behaviors. Recently, memristors have been highly desirable for both fundamental research and technological applications because of their great potential in the development of high-density memory technology and neuromorphic computing. Benefiting from the unique two-dimensional (2D) layered structure and outstanding properties, 2D materials have proven to be good candidates for use in gate-tunable, highly reliable, heterojunction-compatible, and low-power memristive devices. More intriguing, stable and reliable nonvolatile RS behaviors can be achieved in multi- and even monolayer 2D materials, which seems unlikely to be achieved in traditional oxides with thicknesses less than a few nanometers because of the leakage currents. Moreover, such two-terminal devices show a series of synaptic functionalities, suggesting applications in simulating a biological synapse in the neural network. In this review article, we summarize the recent progress in memristors based on inorganic and organic 2D materials, from the material synthesis, device structure and fabrication, and physical mechanism to some versatile memristors based on diverse 2D materials with good RS properties and memristor-based synaptic applications. The development prospects and challenges at the current stage are then highlighted, which is expected to inspire further advancements and new insights into the fields of information storage and neuromorphic computing.

Electric-Field-Induced Reversible Phase Transitions in a Spontaneously Ion-Intercalated 2D Metal Oxide

Electric field driven reversible phase transitions in two-dimensional (2D) materials are appealing for their potential in switching applications. Here, we introduce potassium intercalated MnO₂ as an exemplary case. We demonstrate the synthesis of large-area single-crystal layered MnO₂ via chemical vapor deposition as thin as 5 nm. These crystals are spontaneously intercalated by potassium ions during the synthesis. We showed that the charge transport in 2D K-MnO₂ is dominated by motion of hydrated potassium ions in the interlayer space. Under a few volts bias, separation of potassium and the structural water leads to formation of different phases at the opposite terminals, and at larger biases K-MnO₂ crystals exhibit reversible layered-to-spinel phase transition. These phase transitions are accompanied by electrical and optical changes in the material. We used the electric field driven ionic motion in K-MnO₂ based devices to demonstrate the memristive capabilities of two terminal devices.

A synaptic memristor based on two-dimensional layered WSe2 nanosheets with short- and long-term plasticity

Neural synapses with diverse synaptic functions of short- and long-term plasticity are highly desired for developing complex neuromorphic systems. A memristor with its two terminals serving as pre- and post-neurons, respectively, can emulate two neuronal-based synaptic functions. In this work, multilayer two-dimensional (2D) layered WSe₂ nanosheets are synthesized by a salt-assisted chemical vapor deposition (CVD) method. Two-terminal memristors with a planar structure are fabricated based on the CVD-grown triangular WSe₂ nanosheets. The fabricated devices exhibit typical bipolar nonvolatile resistive switching behaviors with a high current ON/OFF ratio of up to 6 × 10³ and good retention and endurance properties, suggesting good stability and reliability of the WSe₂-based memristors. Furthermore, the developed memristors demonstrate synaptic functions of short- and long-term plasticity (STP and LTP), as well as a transition from STP to LTP by applying consecutive pulse voltages. Moreover, the WSe₂-based memristors exhibits biological synaptic functions of long-term potentiation and depression, and paired-pulse facilitation. Thus, our 2D WSe₂ nanosheet based memristors not only exhibit stable and reliable nonvolatile resistive switching behaviors, but also show potential applications in mimicking biological synapses.

Analog and Digital Bipolar Resistive Switching in Co-Al-Layered Double Hydroxide Memristor

We demonstrate a nonvolatile memristor based on Co-Al-layered double hydroxide (Co-Al LDH). We also introduce a memristor that has a hexazinone-adsorbing Co-Al LDH composite active layer. Memristor characteristics could be modulated by adsorbing hexazinone with Co-Al LDHs in the active layer. While different, Co-Al LDH-based memory devices show gradual current changes, and the memory device with small molecules of adsorbed hexazinone undergo abrupt changes. Both devices demonstrate programmable memory peculiarities. In particular, both memristors show rewritable resistive switching with electrical bistability (>105 s). This research manifests the promising potential of 2D nanocomposite materials for adsorbing electroactive small molecules and rectifying resistive switching properties for memristors, paving a way for design of promising 2D nanocomposite memristors for advanced device applications.