Novel Self-Powered Photodetector with Binary Photoswitching Based on SnSx/TiO2 Heterojunctions

Self-powered SnSx/TiO2 photodetectors (PDs) with dual-band binary response and the applications in imaging and light-encrypted logic gates

In this work, we report the design and fabrication of self-powered binary response PDs based on II-type heterostructures consisting of SnSx nanoflakes (NFs) and rutile TiO2 nanorod arrays (NRs). The TiO2 NRs effectively block light with wavelengths below 400 nm from reaching SnSx. Under 385 nm light, the photoelectrons in TiO2 recombine with holes in SnSx at the interface due to the energy band bending, resulting in a positive photocurrent. Under 410 nm light, the photoelectrons in SnSx and the photogenerated holes in TiO2 accumulate at the interface, overcoming the interfacial potential barriers induced by the higher Fermi levels of SnSx and inducing a negative photocurrent. Based on the bipolar response, the dual-band imaging capability without external filters and the light-encrypted OR, AND, and NOT logic gates using a single device are demonstrated. This work provides a blueprint for the development of multifunctional self-powered PDs that can simplify system architecture, reduce the energy consumption, and improve accuracy for applications, such as visual systems, light-controlled logic circuits, and encrypted optical communications.

Plasmons Enhancing Sub-Bandgap Photoconductivity in TiO2 Nanoparticles Film

The coupling between sub-bandgap defect states and surface plasmon resonances in Au nanoparticles and its effects on the photoconductivity performance of TiO2 are investigated in both the ultraviolet (UV) and visible spectrum. Incorporating a 2 nm gold nanoparticle layer in the photodetector device architecture creates additional trapping pathways, resulting in a faster current decay under UV illumination and a significant enhancement in the visible photocurrent of TiO2, with an 8-fold enhancement of the defects-related photocurrent. We show that hot electron injection (HEI) and plasmonic resonance energy transfer (PRET) jointly contribute to the observed photoconductivity enhancement. In addition to shedding light on the below-band-edge photoconductivity of TiO2, our work provides insight into new methods to probe and examine the surface defects of metal oxide semiconductors using plasmonic resonances.

Self-Powered Wide-Narrow Bandgap-Laminated Perovskite Photodetector with Bipolar Photoresponse for Secure Optical Communication

Perovskite photodetectors with bipolar photoresponse characteristics are expected to be applied in the field of secure optical communication (SOC). However, how to realize the perovskite photodetector with bipolar response remains challenging. Herein, by introducing bismuth iodide (BiI3 ) into Sn-Pb mixed perovskite precursor solution, 2D perovskite FA3 Bi2 I9 is spontaneously formed at the bottom to realize a wide-narrow bandgap-laminated perovskite film. Wavelength-dependent bipolar response is realized based on the absorption difference of the photoactive region with different bandgap combined with the carrier competition of the homotypic transport layer adopted in the as-fabricated photodetector. Under the visible/near-infrared (NIR) light irradiation, the bottom/top of the film generates a higher carrier concentration, where electrons are easier to be separated and transported by the SnO2 /PC61 BM to the bottom/top electrodes, respectively, resulting in a negative and positive bipolar response. Finally, based on positive NIR signal as the effective signal and negative visible signal as the interference signal, the SOC system is realized, where the positive NIR signal is well hidden by the negative visible signal. This work provides a simple and feasible strategy for fabrication of laminated perovskite films to achieve bipolar response.

Dual-coupling effect enables a high-performance self-powered UV photodetector

Self-powered ultraviolet photodetectors generally operate by utilizing the built-in electric field within heterojunctions or Schottky junctions. However, the effectiveness of self-powered detection is severely limited by the weak built-in electric field. Hence, advances in modulating the built-in electric field within heterojunctions are crucial for performance breakthroughs. Here, we suggest a method to enhance the built-in electric field by taking advantage of the dual-coupling effect between heterojunction and the self-polarization field of ferroelectrics. Under zero bias, the fabricated AgNWs/TiO2/PZT/GaN device achieves a responsivity of 184.31 mA/W and a specific detectivity of 1.7 × 1013 Jones, with an on/off ratio of 8.2 × 106 and rise/decay times reaching 0.16 ms/0.98 ms, respectively. The outstanding properties are primarily attributed to the substantial self-polarization of PZT induced by the p-GaN and the subsequent enhancement of the built-in electric field of the TiO2/PZT heterojunction. Under UV illumination, the dual coupling of the enhanced heterojunction and the self-polarizing field synergistically boost the photo-generated carrier separation and transport, leading to breakthroughs in ferroelectric-based self-powered photodetectors.

Pyro-Phototronic Effect-Enhanced Photocurrent of a Self-Powered Photodetector Based on ZnO Nanofiber Arrays/BaTiO3 Films

Self-powered photodetectors (PD) based on ferroelectric materials have gained huge attention because of the spontaneous polarization and unique photovoltaic effect. However, the low photocurrent values and switch ratio of the ferroelectric materials limit their further practical applications in a wide temperature range. In this study, the self-powered ZnO nanofiber array/BaTiO3 (ZnO-NFA/BTO) PD was fabricated by high-ordered ZnO-NFA via electrospinning method deposited on a 300 nm BTO film synthesized using sol-gel method. The electrospinning can prepare ZnO-NFAs with a controllable diameter (100 nm) and orientation and is directly deposited on the quartz at a large scale, which simplifies the fabrication process. This device possesses a greater on/off ratio of 2357 at zero bias than that of BTO PD (3.33) and the ZnO-NFA PD (125) at 0.2 V. The highest responsivity and specific detectivity are 1.41 mA W-1 and 1.48 × 109 Jones at 368 nm under 0 V bias, respectively, which is enhanced about three magnitudes than the pristine BTO PD (1.21 μA W-1 and 1.02 × 109 Jones). The photocurrent of the ZnO-NFA/BTO PD strongly depends on the temperature. After the cooling system and prepolarization processing are both introduced, the largest light current (475 nA) and photovoltaic plateaus (585 nA) are enhanced by about 4417 and 4278% under 368 nm at a power intensity of 4.46 mW cm-2 at 0 °C, respectively. The enhancement of photocurrent is associated with a ferro-pyro-phototronic effect, evidenced by enhanced ferroelectric polarization. The ZnO-NFA/BTO PD can detect weak signals at low power intensity with a wide temperature range of 0-100 °C under 0 V bias. The self-powered ZnO-NFA/BTO PD provides a new and promising way to fabricate high-performance and low-cost photodetectors from inorganic perovskite materials.

Annealing effect on the physical properties of TiO2 thin films deposited by spray pyrolysis

Titanium dioxide (TiO2) thin films were deposited on glass substrates at 350 °C using the spray pyrolysis technique. As deposited and annealed thin films were characterized by X-ray diffraction, scanning electron microscopy, UV-VIS spectroscopy, and photodetection. Unlike the as deposited samples which were amorphous, annealed samples show an anatase phase. Films were absorbent in the UV region and the band gap energy decreases from 3.78 eV to 3.4 eV with annealing. The photoresponse of TiO2 photodetectors was recorded under UV (λ1 = 365 nm, λ2 = 254 nm) and visible light illumination by reversible switching (ON/OFF) cycles using DC electrical characterization. Photosensitive properties such as reproducible photosensitivity, responsivity, and detectivity were also studied.

Layer-Structured Anisotropic Metal Chalcogenides: Recent Advances in Synthesis, Modulation, and Applications

The unique electronic and catalytic properties emerging from low symmetry anisotropic (1D and 2D) metal chalcogenides (MCs) have generated tremendous interest for use in next generation electronics, optoelectronics, electrochemical energy storage devices, and chemical sensing devices. Despite many proof-of-concept demonstrations so far, the full potential of anisotropic chalcogenides has yet to be investigated. This article provides a comprehensive overview of the recent progress made in the synthesis, mechanistic understanding, property modulation strategies, and applications of the anisotropic chalcogenides. It begins with an introduction to the basic crystal structures, and then the unique physical and chemical properties of 1D and 2D MCs. Controlled synthetic routes for anisotropic MC crystals are summarized with example advances in the solution-phase synthesis, vapor-phase synthesis, and exfoliation. Several important approaches to modulate dimensions, phases, compositions, defects, and heterostructures of anisotropic MCs are discussed. Recent significant advances in applications are highlighted for electronics, optoelectronic devices, catalysts, batteries, supercapacitors, sensing platforms, and thermoelectric devices. The article ends with prospects for future opportunities and challenges to be addressed in the academic research and practical engineering of anisotropic MCs.

Observation of polarity-switchable photoconductivity in III-nitride/MoSx core-shell nanowires

III-V semiconductor nanowires are indispensable building blocks for nanoscale electronic and optoelectronic devices. However, solely relying on their intrinsic physical and material properties sometimes limits device functionalities to meet the increasing demands in versatile and complex electronic world. By leveraging the distinctive nature of the one-dimensional geometry and large surface-to-volume ratio of the nanowires, new properties can be attained through monolithic integration of conventional nanowires with other easy-synthesized functional materials. Herein, we combine high-crystal-quality III-nitride nanowires with amorphous molybdenum sulfides (a-MoS_x) to construct III-nitride/a-MoS_x core-shell nanostructures. Upon light illumination, such nanostructures exhibit striking spectrally distinctive photodetection characteristic in photoelectrochemical environment, demonstrating a negative photoresponsivity of -100.42 mA W^-1 under 254 nm illumination, and a positive photoresponsivity of 29.5 mA W^-1 under 365 nm illumination. Density functional theory calculations reveal that the successful surface modification of the nanowires via a-MoS_x decoration accelerates the reaction process at the electrolyte/nanowire interface, leading to the generation of opposite photocurrent signals under different photon illumination. Most importantly, such polarity-switchable photoconductivity can be further tuned for multiple wavelength bands photodetection by simply adjusting the surrounding environment and/or tailoring the nanowire composition, showing great promise to build light-wavelength controllable sensing devices in the future.

Application of Nanostructured TiO2 in UV Photodetectors: A Review

As a wide-bandgap semiconductor material, titanium dioxide (TiO₂ ), which possesses three crystal polymorphs (i.e., rutile, anatase, and brookite), has gained tremendous attention as a cutting-edge material for application in the environment and energy fields. Based on the strong attractiveness from its advantages such as high stability, excellent photoelectric properties, and low-cost fabrication, the construction of high-performance photodetectors (PDs) based on TiO₂ nanostructures is being extensively developed. An elaborate microtopography and device configuration is the most widely used strategy to achieve efficient TiO₂ -based PDs with high photoelectric performances; however, a deep understanding of all the key parameters that influence the behavior of photon-generated carriers, is also highly required to achieve improved photoelectric performances, as well as their ultimate functional applications. Herein, an in-depth illustration of the electrical and optical properties of TiO₂ nanostructures in addition to the advances in the technological issues such as preparation, microdefects, p-type doping, bandgap engineering, heterojunctions, and functional applications are presented. Finally, a future outlook for TiO₂ -based PDs, particularly that of further functional applications is provided. This work will systematically illustrate the fundamentals of TiO₂ and shed light on the preparation of more efficient TiO₂ nanostructures and heterojunctions for future photoelectric applications.

Ultrafast Speed, Dark Current Suppression, and Self-Powered Enhancement in TiO2-Based Ultraviolet Photodetectors by Organic Layers and Ag Nanowires Regulation

TiO₂-based photodetectors (PDs) have been hotspots in recent years for their excellent thermal stabilities and optoelectronic performance under ultraviolet (UV) light. However, the high dark current caused by defects in TiO₂ films has limited the detectivity (D) of these PDs. Here, the dark current of a TiO₂-based PD was effectively reduced by 3 magnitudes (from 0.1 mA to 20 nA) and D was increased to 1.2 × 10¹⁴ Jones by introducing PC71BM. The TiO₂/PC71BM heterojunction also made the PD self-powered, and by further introducing an interface layer of PEDOT:PSS and finely optimizing the electrode Ag nanowires (Ag NWs), the self-powered responsivity (R) was increased to 33 mA/W. Ultrafast rise/decay times (129 ns/1 ms at -1 V and 0.06 s/<1 μs at 0 V) were achieved. This work successfully applied an organic-inorganic heterojunction, an organic interface, and Ag NWs to suppress the dark current and enhance the self-powered photocurrent/R of inorganic PDs, providing a feasible strategy in high-performance UV PDs' design.

Highly sensitive broadband binary photoresponse in gateless epitaxial graphene on 4H-SiC

Due to weak light-matter interaction, standard chemical vapor deposition (CVD)/exfoliated single-layer graphene-based photodetectors show low photoresponsivity (on the order of mA/W). However, epitaxial graphene (EG) offers a more viable approach for obtaining devices with good photoresponsivity. EG on 4H-SiC also hosts an interfacial buffer layer (IBL), which is the source of electron carriers applicable to quantum optoelectronic devices. We utilize these properties to demonstrate a gate-free, planar EG/4H-SiC-based device that enables us to observe the positive photoresponse for (405-532) nm and negative photoresponse for (632-980) nm laser excitation. The broadband binary photoresponse mainly originates from the energy band alignment of the IBL/EG interface and the highly sensitive work function of the EG. We find that the photoresponsivity of the device is > 10 A/W under 405 nm of power density 7.96 mW/cm² at 1 V applied bias, which is three orders of magnitude greater than the obtained values of CVD/exfoliated graphene and higher than the required value for practical applications. These results path the way for selective light-triggered logic devices based on EG and can open a new window for broadband photodetection.

Unfolding photophysical properties of poly(3-hexylthiophene)-MoS2organic-inorganic hybrid materials: an application to self-powered photodetectors

Self-powered photodetectors have grown as inevitable members of the optoelectronic device family. However, it is still challenging to achieve self-powered photodetection with good responsivity in the visible spectrum region. Herein, we report solution-processable poly(3-hexylthiophene) (P3HT)-molybdenum disulfide (MoS₂) organic-inorganic hybrid material, which can be used as the active layer in self-powered photodetectors. The morphological and structural properties of the synthesized P3HT-MoS₂hybrid material has been discussed using atomic force microscopy and transmission electron microscopy, respectively. The hybrid material loaded with 1 wt% MoS₂has shown an enhancement in the self-assembly of polymer in the form of fibrillar formation and excellent structural features in terms ofπ-conjugation. The self-powered photodetectors have been fabricated in indium tin oxide (ITO) coated glass/P3HT-MoS₂/Al configuration. The merit of P3HT-MoS₂hybrid photodetectors is measured under the illumination of 470, 530, and 627 nm light in ambient conditions. P3HT-MoS₂photodetectors show significantly higher responsivity and detectivity. The photo responsivity and detectivity in P3HT-MoS₂devices are found to be 271.2 mA W^-1and 4.4 × 10¹⁰jones at zero bias, respectively, for 470 nm light with the optical power density of 74.1μW cm^-2. Furthermore, the photocurrent switching behaviour at periodic illuminations of 1 Hz has also been examined for P3HT-MoS₂self-powered photodetectors.

High-Performance and Self-Powered Alternating Current Ultraviolet Photodetector for Digital Communication

Self-powered ultraviolet photodetectors offer great potential in the field of optical communication, smart security, space exploration, and others; however, achieving high sensitivity with maintaining fast response speed has remained a daunting challenge. Here, we develop a titanium dioxide-based self-powered ultraviolet photodetector with high detectivity (≈1.8 × 10¹⁰ jones) and a good photoresponsivity of 0.32 mA W^-1 under pulsed illumination (λ = 365 nm, 4 mW cm^-2), which demonstrate an enhancement of 114 and 2017%, respectively, due to the alternating current photovoltaic effect compared to the conventional direct current photovoltaic effect. Further, the photodetector demonstrated a high on/off ratio (≈10³), an ultrafast rise/decay time of 112/63 μs, and a noise equivalent power of 5.01 × 10^-11 W/Hz^1/2 under self-biased conditions. Photoconductive atomic force microscopy revealed the nanoscale charge transport and offered the possibility to scale down the device size to a sub-10-nanometer (∼35 nm). Moreover, as one of the practical applications, the device was successfully utilized to interpret the digital codes. The presented results enlighten a new path to design energy-efficient ultrafast photodetectors not only for the application of optical communication but also for other advanced optoelectronic applications such as digital display, sensing, and others.

Solution processed transparent anatase TiO2 nanoparticles/MoO3 nanostructures heterojunction: high performance self-powered UV detector for low-power and low-light applications

Ultraviolet (UV) photodetectors are considered as the major players in energy saving technology of the future. Efforts are needed to further develop such devices, which are capable of operating efficiently at low driving potential as well as with weak illumination. Herein, we report an all-oxide, highly transparent TiO₂/MoO₃ bilayer film, with nanoparticulate anatase TiO₂ as the platform, fabricated by a simple solution based method and demonstrate its use in UV photodetection. Photoconductivity measurement with 352 nm light reveals the self-powered UV detection capability of the device due to the built-in potential at the bilayer interface. The device exhibits a high photoresponsivity (46.05 A W^-1), detectivity (2.84 × 10¹² Jones) and EQE (16 223%) even with a weak illumination of 76 μW cm^-2, at a low bias of only -1 V. The self-powered performance of the bilayer device is comparable to that of commercial Si photodetectors as well as other such UV detectors reported based on metal oxide heterojunctions. The improved and faster photoresponse shown by the device is due to the formation of an effective heterojunction, as evidenced by XPS, electrochemical and I-V studies. It can be further attributed to the better charge transport through the densely aligned nanostructures, reduced recombination and the better mobility of anatase TiO₂ nanoparticles. The performance is best-in-class and proves the potential of the transparent heterojunction to be used in highly responsive, self-powered UV detectors for low bias, low light applications.