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Yang JN, Wang JJ, Yin YC, Yao HB. Mitigating halide ion migration by resurfacing lead halide perovskite nanocrystals for stable light-emitting diodes. Chem Soc Rev 2023; 52:5516-5540. [PMID: 37482807 DOI: 10.1039/d3cs00179b] [Citation(s) in RCA: 8] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 07/25/2023]
Abstract
Lead halide perovskite nanocrystals are promising for next-generation high-definition displays, especially in light of their tunable bandgaps, high color purities, and high carrier mobility. Within the past few years, the external quantum efficiency of perovskite nanocrystal-based light-emitting diodes has progressed rapidly, reaching the standard for commercial applications. However, the low operational stability of these perovskite nanocrystal-based light-emitting diodes remains a crucial issue for their industrial development. Recent experimental evidence indicates that the migration of ionic species is the primary factor giving rise to the performance degradation of perovskite nanocrystal-based light-emitting diodes, and ion migration is closely related to the defects on the surface of perovskite nanocrystals and at the grain boundaries of their thin films. In this review, we focus on the central idea of surface reconstruction of perovskite nanocrystals, discuss the influence of surface defects on halide ion migration, and summarize recent advances in resurfacing perovskite nanocrystal strategies toward mitigating halide ion migration to improve the stability of the as-fabricated light-emitting diode devices. From the perspective of perovskite nanocrystal resurfacing, we set out a promising research direction for improving both the spectral and operational stability of perovskite nanocrystal-based light-emitting diodes.
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Affiliation(s)
- Jun-Nan Yang
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230088, China.
- Department of Applied Chemistry, Hefei Science Center of Chinese Academy of Sciences, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Jing-Jing Wang
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230088, China.
- Department of Applied Chemistry, Hefei Science Center of Chinese Academy of Sciences, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Yi-Chen Yin
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230088, China.
- Department of Applied Chemistry, Hefei Science Center of Chinese Academy of Sciences, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Hong-Bin Yao
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230088, China.
- Department of Applied Chemistry, Hefei Science Center of Chinese Academy of Sciences, University of Science and Technology of China, Hefei, Anhui 230026, China
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Yang L, Huang J, Tan Y, Lu W, Li Z, Pan A. All-inorganic lead halide perovskite nanocrystals applied in advanced display devices. MATERIALS HORIZONS 2023; 10:1969-1989. [PMID: 37039776 DOI: 10.1039/d3mh00062a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Advanced display devices are in greater demand due to their large color gamut, high color purity, ultrahigh visual resolution, and small size pixels. All-inorganic lead halide perovskite (AILHP) nanocrystals (NCs) possess inherent advantages such as narrow emission width, saturated color, and flexible integration, and have been developed as functional films, light sources, backlight components, and display panels. However, some drawbacks still restrict the practical application of advanced display devices based on AILHP NCs, including working stability, large-scale synthesis, and cost. In this review, we focus on AILHP NCs, review the recent progress in materials synthesis, stability improvement, patterning techniques, and device application. We also highlight the important role of materials systems in creating advanced display devices, followed by the challenges and opportunities in industrial processes. This review provides beneficial inspiration for the future development of AILHP NCs in colorful and white backlight, as well as high resolution full-color displays.
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Affiliation(s)
- Liuli Yang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, P. R. China.
| | - Jianhua Huang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, P. R. China.
| | - Yike Tan
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, P. R. China.
| | - Wei Lu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, P. R. China.
| | - Ziwei Li
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, P. R. China.
- Wuhan National Laboratory for Optoelectronics and School of Physics, Huazhong University of Science and Technology, Wuhan, China
| | - Anlian Pan
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, P. R. China.
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Lee SY, Jang SH, Lee G, Park NH, Park J, Park DH, Cho KH, Jung JW, Choi J. Investigation of highly luminescent inorganic perovskite nanocrystals synthesized using optimized ultrasonication method. ULTRASONICS SONOCHEMISTRY 2022; 89:106145. [PMID: 36067647 PMCID: PMC9463450 DOI: 10.1016/j.ultsonch.2022.106145] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/10/2022] [Revised: 08/22/2022] [Accepted: 08/25/2022] [Indexed: 06/15/2023]
Abstract
All-inorganic halide perovskite nanocrystals are next-generation materials with excellent optical and semiconductor properties suitable for display applications. In this study, we introduce an optimized ultrasonication method for the high-capacity synthesis of highly luminescent inorganic perovskite nanocrystals. After the synthesis of CsPbBr3 with superior optical performance by ultrasonication method, halide anion exchange was performed to tune the stable emission wavelength over the entire visible range. In particular, the maximum photoluminescence wavelengths of the red and green perovskite nanocrystals were appropriate for light-emitting diode applications, and their full-width-at-half-maximum were very narrow, showing outstanding color purity. The materials also had excellent thermal and photo-stability, which is a necessary requirement for perovskite nanocrystal/organic light-emitting diode hybrid device applications. We formulated uniformly stable perovskite nanocrystal inks and optimized their physical and rheological properties for successful inkjet-printing. Finally, we fabricated a hybrid device with a color conversion layer based on the red and green perovskite nanocrystals synthesized using the optimized ultrasonication and halide-ion-exchange methods. The color reproduction range of the fabricated devices was 27.3 % wider than that of the National Television System Committee values, indicating very vivid colors.
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Affiliation(s)
- Sang Yoon Lee
- Material & Component Convergence R&D Department, Korea Institute of Industrial Technology (KITECH), Ansan 15588, Republic of Korea; Department of Advanced Materials Engineering for Information & Electronics, KyungHee University, Yongin 17104, Republic of Korea
| | - Seong Hyun Jang
- Material & Component Convergence R&D Department, Korea Institute of Industrial Technology (KITECH), Ansan 15588, Republic of Korea; Lab. Of Organic Photo-functional Materials, Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea
| | - Geonho Lee
- Material & Component Convergence R&D Department, Korea Institute of Industrial Technology (KITECH), Ansan 15588, Republic of Korea; Department of Chemical Engineering, KyungHee University, Yongin 17104, Republic of Korea
| | - No-Hyung Park
- Material & Component Convergence R&D Department, Korea Institute of Industrial Technology (KITECH), Ansan 15588, Republic of Korea
| | - Jongwook Park
- Department of Chemical Engineering, KyungHee University, Yongin 17104, Republic of Korea
| | - Dong Hyup Park
- Applied Polymer Research Center, Korea Conformity Laboratories, Incheon 21594, Republic of Korea
| | - Kwan Hyun Cho
- Digital Transformation R&D Department, Korea Institute of Industrial Technology (KITECH) Ansan 15588, Republic of Korea.
| | - Jae Woong Jung
- Department of Advanced Materials Engineering for Information & Electronics, KyungHee University, Yongin 17104, Republic of Korea.
| | - Jun Choi
- Material & Component Convergence R&D Department, Korea Institute of Industrial Technology (KITECH), Ansan 15588, Republic of Korea.
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Kim J, Seo K, Lee S, Kim K, Kim C, Lee J. All-in-One Process for Color Tuning and Patterning of Perovskite Quantum Dot Light-Emitting Diodes. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2200073. [PMID: 35233994 PMCID: PMC9069357 DOI: 10.1002/advs.202200073] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/28/2022] [Indexed: 05/05/2023]
Abstract
Although post-synthetic anion exchange allows halide perovskite quantum dots to easily change the optical bandgap of materials, additional exchange of shorter ligands is required to use them as active materials in optoelectronic devices. In this study, a novel all-in-one process exchanging ligands and halide anions in film-state for facile color tuning and patterning of cesium lead halide perovskite colloidal quantum dot (PeQD) light-emitting diodes (LEDs) is proposed. The proposed all-in-one process significantly enhances the performances of PeQD LEDs by passivating the PeQD with shorter ligands. In addition, the all-in-one process is repeated more stably in the film state. Red, green, and blue LEDs with extremely narrow emission spectra using cesium lead bromide PeQDs and appropriate butylammonium halide solutions are fabricated. Furthermore, the proposed all-in-one process in film-state facilitated rapid color change in localized areas, thereby aiding in realizing fine patterns of narrow widths (300 µm) using simple contact masks. Consequently, various paint-over red/green/blue patterns in PeQD LEDs by applying halide solutions additively are fabricated.
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Affiliation(s)
- Junho Kim
- School of Electrical Engineering (EE)Korea Advanced Institute of Science and Technology (KAIST)291 Daehak‐ro, Yuseong‐guDaejeon34141Republic of Korea
| | - Ki‐Won Seo
- School of Electrical Engineering (EE)Korea Advanced Institute of Science and Technology (KAIST)291 Daehak‐ro, Yuseong‐guDaejeon34141Republic of Korea
| | - SeungJae Lee
- School of Electrical Engineering (EE)Korea Advanced Institute of Science and Technology (KAIST)291 Daehak‐ro, Yuseong‐guDaejeon34141Republic of Korea
| | - Kyungmin Kim
- School of Electrical Engineering (EE)Korea Advanced Institute of Science and Technology (KAIST)291 Daehak‐ro, Yuseong‐guDaejeon34141Republic of Korea
| | - Changjo Kim
- School of Electrical Engineering (EE)Korea Advanced Institute of Science and Technology (KAIST)291 Daehak‐ro, Yuseong‐guDaejeon34141Republic of Korea
| | - Jung‐Yong Lee
- School of Electrical Engineering (EE)Korea Advanced Institute of Science and Technology (KAIST)291 Daehak‐ro, Yuseong‐guDaejeon34141Republic of Korea
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Kumar M, Pawar V, Jha PK, Jha PA, Singh P. Compositional degradation with Br content in Cesium lead halide CsPbBrxI3-x. J SOLID STATE CHEM 2022. [DOI: 10.1016/j.jssc.2022.122893] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/26/2022]
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Wen Z, Xie F, Choy WCH. Stability of electroluminescent perovskite quantum dots light‐emitting diode. NANO SELECT 2021. [DOI: 10.1002/nano.202100203] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/05/2022] Open
Affiliation(s)
- Zhuoqi Wen
- Academy for Engineering and Technology Fudan University Shanghai China
| | - Fengxian Xie
- Academy for Engineering and Technology Fudan University Shanghai China
- Institute for Electric Light Sources, School of Information Science and Technology Fudan University Shanghai China
| | - Wallace. C. H. Choy
- Department of Electrical and Electronic Engineering The University of Hong Kong Hong Kong China
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Xiao P, Yu Y, Cheng J, Chen Y, Yuan S, Chen J, Yuan J, Liu B. Advances in Perovskite Light-Emitting Diodes Possessing Improved Lifetime. NANOMATERIALS (BASEL, SWITZERLAND) 2021; 11:E103. [PMID: 33406749 PMCID: PMC7823701 DOI: 10.3390/nano11010103] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/07/2020] [Revised: 12/23/2020] [Accepted: 12/26/2020] [Indexed: 12/14/2022]
Abstract
Recently, perovskite light-emitting diodes (PeLEDs) are seeing an increasing academic and industrial interest with a potential for a broad range of technologies including display, lighting, and signaling. The maximum external quantum efficiency of PeLEDs can overtake 20% nowadays, however, the lifetime of PeLEDs is still far from the demand of practical applications. In this review, state-of-the-art concepts to improve the lifetime of PeLEDs are comprehensively summarized from the perspective of the design of perovskite emitting materials, the innovation of device engineering, the manipulation of optical effects, and the introduction of advanced encapsulations. First, the fundamental concepts determining the lifetime of PeLEDs are presented. Then, the strategies to improve the lifetime of both organic-inorganic hybrid and all-inorganic PeLEDs are highlighted. Particularly, the approaches to manage optical effects and encapsulations for the improved lifetime, which are negligibly studied in PeLEDs, are discussed based on the related concepts of organic LEDs and Cd-based quantum-dot LEDs, which is beneficial to insightfully understand the lifetime of PeLEDs. At last, the challenges and opportunities to further enhance the lifetime of PeLEDs are introduced.
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Affiliation(s)
- Peng Xiao
- Guangdong-Hong Kong-Macao Intelligent Micro-Nano Optoelectronic Technology Joint Laboratory, Foshan University, Foshan 528225, China; (P.X.); (J.C.); (Y.C.); (S.Y.); (J.C.); (J.Y.)
| | - Yicong Yu
- Guangdong-Hong Kong-Macao Intelligent Micro-Nano Optoelectronic Technology Joint Laboratory, Foshan University, Foshan 528225, China; (P.X.); (J.C.); (Y.C.); (S.Y.); (J.C.); (J.Y.)
| | - Junyang Cheng
- Guangdong-Hong Kong-Macao Intelligent Micro-Nano Optoelectronic Technology Joint Laboratory, Foshan University, Foshan 528225, China; (P.X.); (J.C.); (Y.C.); (S.Y.); (J.C.); (J.Y.)
| | - Yonglong Chen
- Guangdong-Hong Kong-Macao Intelligent Micro-Nano Optoelectronic Technology Joint Laboratory, Foshan University, Foshan 528225, China; (P.X.); (J.C.); (Y.C.); (S.Y.); (J.C.); (J.Y.)
| | - Shengjin Yuan
- Guangdong-Hong Kong-Macao Intelligent Micro-Nano Optoelectronic Technology Joint Laboratory, Foshan University, Foshan 528225, China; (P.X.); (J.C.); (Y.C.); (S.Y.); (J.C.); (J.Y.)
| | - Jianwen Chen
- Guangdong-Hong Kong-Macao Intelligent Micro-Nano Optoelectronic Technology Joint Laboratory, Foshan University, Foshan 528225, China; (P.X.); (J.C.); (Y.C.); (S.Y.); (J.C.); (J.Y.)
| | - Jian Yuan
- Guangdong-Hong Kong-Macao Intelligent Micro-Nano Optoelectronic Technology Joint Laboratory, Foshan University, Foshan 528225, China; (P.X.); (J.C.); (Y.C.); (S.Y.); (J.C.); (J.Y.)
| | - Baiquan Liu
- School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
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