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Han JH, Lee SH, Jeong SG, Kim DY, Yang HL, Lee S, Yoo SY, Park I, Park HB, Lim KS, Yang WJ, Choi HC, Park JS. Atomic-Layer-Deposited SiO x/SnO x Nanolaminate Structure for Moisture and Hydrogen Gas Diffusion Barriers. ACS APPLIED MATERIALS & INTERFACES 2021; 13:39584-39594. [PMID: 34383478 DOI: 10.1021/acsami.1c09901] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
High-density SnOx and SiOx thin films were deposited via atomic layer deposition (ALD) at low temperatures (100 °C) using tetrakis(dimethylamino)tin(IV) (TDMASn) and di-isopropylaminosilane (DIPAS) as precursors and hydrogen peroxide (H2O2) and O2 plasma as reactants, respectively. The thin-film encapsulation (TFE) properties of SnOx and SiOx were demonstrated with thickness dependence measurements of the water vapor transmission rate (WVTR) evaluated at 50 °C and 90% relative humidity, and different TFE performance tendencies were observed between thermal and plasma ALD SnOx. The film density, crystallinity, and pinholes formed in the SnOx film appeared to be closely related to the diffusion barrier properties of the film. Based on the above results, a nanolaminate (NL) structure consisting of SiOx and SnOx deposited using plasma-enhanced ALD was measured using WVTR (H2O molecule diffusion) at 2.43 × 10-5 g/m2 day with a 10/10 nm NL structure and time-lag gas permeation measurement (H2 gas diffusion) for applications as passivation layers in various electronic devices.
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Affiliation(s)
- Ju-Hwan Han
- Division of Materials Science and Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 04763, Republic of Korea
| | - Seong-Hyeon Lee
- Division of Materials Science and Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 04763, Republic of Korea
| | - Seok-Goo Jeong
- Division of Nanoscale Semiconductor Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 04763, Republic of Korea
| | - Dong-Yeon Kim
- Division of Materials Science and Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 04763, Republic of Korea
| | - Hae Lin Yang
- Division of Materials Science and Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 04763, Republic of Korea
| | - Seunghwan Lee
- Division of Materials Science and Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 04763, Republic of Korea
| | - Seung Yeon Yoo
- Department of Energy Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 04763, Republic of Korea
| | - Inho Park
- Department of Energy Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 04763, Republic of Korea
| | - Ho Bum Park
- Department of Energy Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 04763, Republic of Korea
| | - Kwang-Su Lim
- E2 Block LG Science Park (LG Display), 30, Magokjungang 10-ro, Gangseo-gu, Seoul 07796, Republic of Korea
| | - Won-Jae Yang
- E2 Block LG Science Park (LG Display), 30, Magokjungang 10-ro, Gangseo-gu, Seoul 07796, Republic of Korea
| | - Hyun-Chul Choi
- E2 Block LG Science Park (LG Display), 30, Magokjungang 10-ro, Gangseo-gu, Seoul 07796, Republic of Korea
| | - Jin-Seong Park
- Division of Materials Science and Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 04763, Republic of Korea
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Nurdiwijayanto L, Nishijima H, Miyake Y, Sakai N, Osada M, Sasaki T, Taniguchi T. Solution-Processed Two-Dimensional Metal Oxide Anticorrosion Nanocoating. NANO LETTERS 2021; 21:7044-7049. [PMID: 34428904 DOI: 10.1021/acs.nanolett.1c02581] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Molecularly thin two-dimensional (2D) nanomaterials are attractive building blocks for constructing anticorrosion nanocoatings as an ultimate pursuit in the metal-related industry. However, the nanocoating of prefocused graphene is far from industrial demands due to its high cost, low scalability, and insufficient quality. We propose all requirements to realize rational anticorrosion nanocoating of metal oxide nanosheets. The proof-of-concept study with Ti0.87O2 and Ca2Nb3O10 nanosheets demonstrates that the 10 and 20 nm thick coatings fabricated by a facile layer-by-layer (LbL) self-assembly on stainless steel (SUS) give perfect inhibition efficiency (IE) values of 99.92% and 99.89%, respectively. A driving test with a nanosheet-coated car-baffle demonstrated suitable corrosion resistance and mechanical and thermal robustness for industrial applications. The revealed and controlled thermal oxidation mechanisms are critical toward high-temperature application of the 2D oxide anticorrosion nanocoating. The advantages of nanosheet coating and extensible materials design will open a solid but exciting route to anticorrosion nanotechnology.
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Affiliation(s)
- Leanddas Nurdiwijayanto
- International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan
| | - Hiroki Nishijima
- New Field Material Creation Department, Electrification & Environment Material Engineering Division, Toyota Motor Corporation, Toyota-cho, Toyota, Aichi 471-8572, Japan
| | - Yoshiharu Miyake
- New Field Material Creation Department, Electrification & Environment Material Engineering Division, Toyota Motor Corporation, Toyota-cho, Toyota, Aichi 471-8572, Japan
| | - Nobuyuki Sakai
- International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan
| | - Minoru Osada
- International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan
- Institute of Materials and Systems for Sustainability, Nagoya University, Furocho, Chikusa-ku, Nagoya 464-8603, Japan
| | - Takayoshi Sasaki
- International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan
| | - Takaaki Taniguchi
- International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan
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Fabrication of a Robust In 2O 3 Nanolines FET Device as a Biosensor Platform. MICROMACHINES 2021; 12:mi12060642. [PMID: 34072848 PMCID: PMC8229030 DOI: 10.3390/mi12060642] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/12/2021] [Revised: 05/26/2021] [Accepted: 05/30/2021] [Indexed: 01/14/2023]
Abstract
Field-effect transistors (FETs) are attractive biosensor platforms for rapid and accurate detection of various analytes through surface immobilization of specific bio-receptors. Since it is difficult to maintain the electrical stability of semiconductors of sensing channel under physiological conditions for long periods, passivation by a stable metal oxide dielectric layer, such as Al2O3 or HfO2, is currently used as a common method to prevent damage. However, protecting the sensing channel by passivation has the disadvantage that the distance between the target and the conductive channel increases, and the sensing signal will be degraded by Debye shielding. Even though many efforts use semiconductor materials directly as channels for biosensors, the electrical stability of semiconductors in the physiological environments has rarely been studied. In this work, an In2O3 nanolines FET device with high robustness in artificial physiological solution of phosphate buffered saline (PBS) was fabricated and used as a platform for biosensors without employing passivation on the sensing channel. The FET device demonstrated reproducibility with an average threshold voltage (VTH) of 5.235 V and a standard deviation (SD) of 0.382 V. We tested the robustness of the In2O3 nanolines FET device in PBS solution and found that the device had a long-term electrical stability in PBS with more than 9 days’ exposure. Finally, we demonstrated its applicability as a biosensor platform by testing the biosensing performance towards miR-21 targets after immobilizing the phosphonic acid terminated DNA probes. Since the surface immobilization of multiple bioreceptors is feasible, we demonstrate that the robust In2O3 FET device can be an excellent biosensor platform for biosensors.
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