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Singh NS, Mia AK, Giri PK. Role of oxygen functional groups and attachment of Au nanoparticles on graphene oxide sheets for improved photodetection performance. NANOSCALE ADVANCES 2024; 6:2136-2148. [PMID: 38633034 PMCID: PMC11019478 DOI: 10.1039/d3na01120h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/15/2023] [Accepted: 03/14/2024] [Indexed: 04/19/2024]
Abstract
Integrating low-dimensional graphene oxide (GO) with conventional Si technology offers innovative strategies for developing ultrafast wideband photodetectors. In this study, we synthesized GO and explored its potential application in broadband photodetection alongside silicon heterostructures. The as-synthesized GO contains various oxygen functional groups, as evidenced by X-ray photoelectron and Fourier transform infrared spectroscopy. These functional groups contribute to increased photo absorption, enhancing photodetection performance. The systematic reduction of these functional groups from the GO surface via thermal annealing decreases photo absorption and consequently lowers the photocurrent. This reduction diminishes photo absorption and amplifies the dark current by approximately 25 times, from 20 nA to 496 nA. This dark current increase is attributed to the electron mobility following the reduction of functional groups. However, attaching plasmonic gold nanoparticles (Au NPs) to the GO surface enhances UV-Vis absorption in the visible region, enabling broadband detection. The even distribution of attached Au NPs on the GO surface is confirmed through field emission transmission electron microscopy. While thermal annealing of GO diminishes the responsivity from 4.6 A W-1 to 3.0 A W-1, the attachment of Au NPs augments the responsivity by more than two-fold, reaching 10.0 A W-1. Thus, it highlights the importance of rich oxygen functional groups in GO and the attachment of Au NPs to achieve more efficient photo-sensing properties.
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Affiliation(s)
| | - Abdul Kaium Mia
- Centre for Nanotechnology, Indian Institute of Technology Guwahati Guwahati 781039 India
| | - P K Giri
- Centre for Nanotechnology, Indian Institute of Technology Guwahati Guwahati 781039 India
- Department of Physics, Indian Institute of Technology Guwahati Guwahati 781039 India
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Shultz A, Liu B, Gong M, Vargas HB, Robles Hernandez FC, Wu JZ. Probing the Critical Role of Interfaces for Superior Performance in PbS Quantum Dot/Graphene Nanohybrid Broadband Photodetectors. ACS APPLIED MATERIALS & INTERFACES 2024. [PMID: 38592435 DOI: 10.1021/acsami.4c01115] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/10/2024]
Abstract
Colloidal quantum dots/graphene (QD/Gr) nanohybrids have been studied intensively for photodetection in a broadband spectrum including ultraviolet, visible, near-infrared, and shortwave infrared (UV-vis-NIR-SWIR). Since the optoelectronic process in the QD/Gr nanohybrid relies on the photogenerated charge carrier transfer from QDs to graphene, understanding the role of the QD-QD and QD-Gr interfaces is imperative to the QD/Gr nanohybrid photodetection. Herein, a systematic study is carried out to probe the effect of these interfaces on the noise, photoresponse, and specific detectivity in the UV-vis-NIR-SWIR spectrum. Interestingly, the photoresponse has been found to be negligible without a 3-mercaptopropionic acid (MPA) ligand exchange, moderate with a single ligand exchange after all QD layers are deposited on graphene, and maximum if it is performed after each QD layer deposition up to five layers of total QD thickness of 260-280 nm. Furthermore, exposure of graphene to C-band UV (UVC) for a short period of 4-5 min before QD deposition leads to improved photoresponse via removal of polar molecules at the QD/Gr interface. With the combination of the MPA ligand exchange and UVC exposure, optimal optoelectronic properties can be obtained on the PbS QD/Gr nanohybrids with high specific detectivity up to 2.6 × 1011, 1.5 × 1011, 5 × 1010, and 1.9 × 109 Jones at 400, 550, 1000, and 1700 nm, respectively, making the nanohybrids promising for broadband photodetection.
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Affiliation(s)
- Andrew Shultz
- Department of Physics and Astronomy, The University of Kansas, Lawrence, Kansas 66045, United States
| | - Bo Liu
- Department of Physics and Astronomy, The University of Kansas, Lawrence, Kansas 66045, United States
| | - Maogang Gong
- Department of Physics and Astronomy, The University of Kansas, Lawrence, Kansas 66045, United States
- ZenoLeap LLC, Innovation Park, Lawrence, Kansas 66045, United States
| | - Hugo Barragan Vargas
- Department of Mechanical Engineering Technology, Advanced Manufacturing Institute, University of Houston, Houston, Texas 77204, United States
- CIITEC-IPN Cda. de Cecati s/n, Santa Catarina, Azcapotzalco, CDMX 02250, Mexico
| | - Francisco C Robles Hernandez
- Department of Mechanical Engineering Technology, Advanced Manufacturing Institute, University of Houston, Houston, Texas 77204, United States
- CIITEC-IPN Cda. de Cecati s/n, Santa Catarina, Azcapotzalco, CDMX 02250, Mexico
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
| | - Judy Z Wu
- Department of Physics and Astronomy, The University of Kansas, Lawrence, Kansas 66045, United States
- ZenoLeap LLC, Innovation Park, Lawrence, Kansas 66045, United States
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Ding Y, Jiang J, Wu Y, Zhang Y, Zhou J, Zhang Y, Huang Q, Zheng Z. Porous Conductive Textiles for Wearable Electronics. Chem Rev 2024; 124:1535-1648. [PMID: 38373392 DOI: 10.1021/acs.chemrev.3c00507] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/21/2024]
Abstract
Over the years, researchers have made significant strides in the development of novel flexible/stretchable and conductive materials, enabling the creation of cutting-edge electronic devices for wearable applications. Among these, porous conductive textiles (PCTs) have emerged as an ideal material platform for wearable electronics, owing to their light weight, flexibility, permeability, and wearing comfort. This Review aims to present a comprehensive overview of the progress and state of the art of utilizing PCTs for the design and fabrication of a wide variety of wearable electronic devices and their integrated wearable systems. To begin with, we elucidate how PCTs revolutionize the form factors of wearable electronics. We then discuss the preparation strategies of PCTs, in terms of the raw materials, fabrication processes, and key properties. Afterward, we provide detailed illustrations of how PCTs are used as basic building blocks to design and fabricate a wide variety of intrinsically flexible or stretchable devices, including sensors, actuators, therapeutic devices, energy-harvesting and storage devices, and displays. We further describe the techniques and strategies for wearable electronic systems either by hybridizing conventional off-the-shelf rigid electronic components with PCTs or by integrating multiple fibrous devices made of PCTs. Subsequently, we highlight some important wearable application scenarios in healthcare, sports and training, converging technologies, and professional specialists. At the end of the Review, we discuss the challenges and perspectives on future research directions and give overall conclusions. As the demand for more personalized and interconnected devices continues to grow, PCT-based wearables hold immense potential to redefine the landscape of wearable technology and reshape the way we live, work, and play.
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Affiliation(s)
- Yichun Ding
- School of Fashion and Textiles, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong SAR 999077, P. R. China
- Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350108, P. R. China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian 350108, P. R. China
| | - Jinxing Jiang
- School of Fashion and Textiles, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong SAR 999077, P. R. China
| | - Yingsi Wu
- School of Fashion and Textiles, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong SAR 999077, P. R. China
| | - Yaokang Zhang
- School of Fashion and Textiles, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong SAR 999077, P. R. China
| | - Junhua Zhou
- School of Fashion and Textiles, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong SAR 999077, P. R. China
| | - Yufei Zhang
- School of Fashion and Textiles, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong SAR 999077, P. R. China
| | - Qiyao Huang
- School of Fashion and Textiles, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong SAR 999077, P. R. China
- Research Institute for Intelligent Wearable Systems, The Hong Kong Polytechnic University, Hong Kong SAR 999077, P. R. China
| | - Zijian Zheng
- School of Fashion and Textiles, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong SAR 999077, P. R. China
- Department of Applied Biology and Chemical Technology, Faculty of Science, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong SAR 999077, P. R. China
- Research Institute for Intelligent Wearable Systems, The Hong Kong Polytechnic University, Hong Kong SAR 999077, P. R. China
- Research Institute for Smart Energy, The Hong Kong Polytechnic University, Hong Kong SAR 999077, P. R. China
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Ngo DA, Nguyen NM, Tran CK, Van Tran TT, Thi Tran NH, Thao Bui TT, Duy LT, Dang VQ. A study on a broadband photodetector based on hybrid 2D copper oxide/reduced graphene oxide. NANOSCALE ADVANCES 2024; 6:1460-1466. [PMID: 38419870 PMCID: PMC10898423 DOI: 10.1039/d3na00796k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/20/2023] [Accepted: 01/24/2024] [Indexed: 03/02/2024]
Abstract
These days, photodetectors are a crucial part of optoelectronic devices, ranging from environmental monitoring to international communication systems. Therefore, fabricating these devices at a low cost but obtaining high sensitivity in a wide range of wavelengths is of great interest. This report introduces a simple solution-processed hybrid 2D structure of CuO and rGO for broadband photodetector applications. Particularly, 2D CuO acts as the active material, absorbing light to generate electron-hole pairs, while 2D rGO plays the role of a transport layer, driving charge carriers between two electrodes. Our device exhibits remarkable sensitivity to a wide wavelength range from 395 nm to 945 nm (vis-NIR region). Interestingly, our devices' responsivity and photoconductive gain were calculated (under 395 nm wavelength excitation) to be up to 8 mA W-1 and 28 fold, respectively, which are comparable values with previous publications. Our hybrid 2D structure between rGO and CuO enables a potential approach for developing low-cost but high-performance optoelectronic devices, especially photodetectors, in the future.
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Affiliation(s)
- Duc Anh Ngo
- Faculty of Materials Science and Technology, University of Science 227 Nguyen Van Cu Street District 5 Ho Chi Minh City 700000 Vietnam
- Vietnam National University (VNU-HCM) Ho Chi Minh City 700000 Vietnam
| | - Nhat Minh Nguyen
- Faculty of Materials Science and Technology, University of Science 227 Nguyen Van Cu Street District 5 Ho Chi Minh City 700000 Vietnam
- Vietnam National University (VNU-HCM) Ho Chi Minh City 700000 Vietnam
| | - Cong Khanh Tran
- Faculty of Materials Science and Technology, University of Science 227 Nguyen Van Cu Street District 5 Ho Chi Minh City 700000 Vietnam
- Vietnam National University (VNU-HCM) Ho Chi Minh City 700000 Vietnam
| | - Thi Thanh Van Tran
- Faculty of Materials Science and Technology, University of Science 227 Nguyen Van Cu Street District 5 Ho Chi Minh City 700000 Vietnam
- Vietnam National University (VNU-HCM) Ho Chi Minh City 700000 Vietnam
| | - Nhu Hoa Thi Tran
- Faculty of Materials Science and Technology, University of Science 227 Nguyen Van Cu Street District 5 Ho Chi Minh City 700000 Vietnam
- Center for Innovative Materials and Architectures (INOMAR) Ho Chi Minh City 700000 Vietnam
- Vietnam National University (VNU-HCM) Ho Chi Minh City 700000 Vietnam
| | - Thi Thu Thao Bui
- Faculty of Materials Science and Technology, University of Science 227 Nguyen Van Cu Street District 5 Ho Chi Minh City 700000 Vietnam
- Vietnam National University (VNU-HCM) Ho Chi Minh City 700000 Vietnam
| | - Le Thai Duy
- Faculty of Materials Science and Technology, University of Science 227 Nguyen Van Cu Street District 5 Ho Chi Minh City 700000 Vietnam
- Vietnam National University (VNU-HCM) Ho Chi Minh City 700000 Vietnam
| | - Vinh Quang Dang
- Faculty of Materials Science and Technology, University of Science 227 Nguyen Van Cu Street District 5 Ho Chi Minh City 700000 Vietnam
- Center for Innovative Materials and Architectures (INOMAR) Ho Chi Minh City 700000 Vietnam
- Vietnam National University (VNU-HCM) Ho Chi Minh City 700000 Vietnam
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Chang S, Koo JH, Yoo J, Kim MS, Choi MK, Kim DH, Song YM. Flexible and Stretchable Light-Emitting Diodes and Photodetectors for Human-Centric Optoelectronics. Chem Rev 2024; 124:768-859. [PMID: 38241488 DOI: 10.1021/acs.chemrev.3c00548] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/21/2024]
Abstract
Optoelectronic devices with unconventional form factors, such as flexible and stretchable light-emitting or photoresponsive devices, are core elements for the next-generation human-centric optoelectronics. For instance, these deformable devices can be utilized as closely fitted wearable sensors to acquire precise biosignals that are subsequently uploaded to the cloud for immediate examination and diagnosis, and also can be used for vision systems for human-interactive robotics. Their inception was propelled by breakthroughs in novel optoelectronic material technologies and device blueprinting methodologies, endowing flexibility and mechanical resilience to conventional rigid optoelectronic devices. This paper reviews the advancements in such soft optoelectronic device technologies, honing in on various materials, manufacturing techniques, and device design strategies. We will first highlight the general approaches for flexible and stretchable device fabrication, including the appropriate material selection for the substrate, electrodes, and insulation layers. We will then focus on the materials for flexible and stretchable light-emitting diodes, their device integration strategies, and representative application examples. Next, we will move on to the materials for flexible and stretchable photodetectors, highlighting the state-of-the-art materials and device fabrication methods, followed by their representative application examples. At the end, a brief summary will be given, and the potential challenges for further development of functional devices will be discussed as a conclusion.
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Affiliation(s)
- Sehui Chang
- School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Republic of Korea
| | - Ja Hoon Koo
- Department of Semiconductor Systems Engineering, Sejong University, Seoul 05006, Republic of Korea
- Institute of Semiconductor and System IC, Sejong University, Seoul 05006, Republic of Korea
| | - Jisu Yoo
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Min Seok Kim
- School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Republic of Korea
| | - Moon Kee Choi
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
- Graduate School of Semiconductor Materials and Devices Engineering, Center for Future Semiconductor Technology (FUST), UNIST, Ulsan 44919, Republic of Korea
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
| | - Dae-Hyeong Kim
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
- School of Chemical and Biological Engineering, Institute of Chemical Processes, Seoul National University (SNU), Seoul 08826, Republic of Korea
- Department of Materials Science and Engineering, SNU, Seoul 08826, Republic of Korea
- Interdisciplinary Program for Bioengineering, SNU, Seoul 08826, Republic of Korea
| | - Young Min Song
- School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Republic of Korea
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
- Artificial Intelligence (AI) Graduate School, GIST, Gwangju 61005, Republic of Korea
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Gu J, Shen Y, Tian S, Xue Z, Meng X. Recent Advances in Nanowire-Based Wearable Physical Sensors. BIOSENSORS 2023; 13:1025. [PMID: 38131785 PMCID: PMC10742341 DOI: 10.3390/bios13121025] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/01/2023] [Revised: 12/06/2023] [Accepted: 12/08/2023] [Indexed: 12/23/2023]
Abstract
Wearable electronics is a technology that closely integrates electronic devices with the human body or clothing, which can realize human-computer interaction, health monitoring, smart medical, and other functions. Wearable physical sensors are an important part of wearable electronics. They can sense various physical signals from the human body or the surrounding environment and convert them into electrical signals for processing and analysis. Nanowires (NW) have unique properties such as a high surface-to-volume ratio, high flexibility, high carrier mobility, a tunable bandgap, a large piezoresistive coefficient, and a strong light-matter interaction. They are one of the ideal candidates for the fabrication of wearable physical sensors with high sensitivity, fast response, and low power consumption. In this review, we summarize recent advances in various types of NW-based wearable physical sensors, specifically including mechanical, photoelectric, temperature, and multifunctional sensors. The discussion revolves around the structural design, sensing mechanisms, manufacture, and practical applications of these sensors, highlighting the positive role that NWs play in the sensing process. Finally, we present the conclusions with perspectives on current challenges and future opportunities in this field.
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Affiliation(s)
| | | | | | - Zhaoguo Xue
- National Key Laboratory of Strength and Structural Integrity, School of Aeronautic Science and Engineering, Beihang University, Beijing 100191, China
| | - Xianhong Meng
- National Key Laboratory of Strength and Structural Integrity, School of Aeronautic Science and Engineering, Beihang University, Beijing 100191, China
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Chiu CH, Chen YT, Shen JL. Quantum dots derived from two-dimensional transition metal dichalcogenides: synthesis, optical properties and optoelectronic applications. NANOTECHNOLOGY 2023; 34:482001. [PMID: 37607498 DOI: 10.1088/1361-6528/acf29c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/25/2023] [Accepted: 08/21/2023] [Indexed: 08/24/2023]
Abstract
Zero-dimensional transition metal dichalcogenides (TMD) quantum dots (QDs) have attracted a lot of attention due to their interesting fundamental properties and various applications. Compared to TMD monolayers, the QD counterpart exhibits larger values for direct transition energies, exciton binding energies, absorption coefficient, luminescence efficiency, and specific surface area. These characteristics make them useful in optoelectronic devices. In this review, recent exciting progress on synthesis, optical properties, and applications of TMD QDs is highlighted. The first part of this article begins with a brief description of the synthesis approaches, which focus on microwave-assistant heating and pulsed laser ablation methods. The second part introduces the fundamental optical properties of TMD QDs, including quantum confinement in optical absorption, excitation-wavelength-dependent photoluminescence, and many-body effects. These properties are highlighted. In the third part, we discuss lastest advancements in optoelectronic devices based on TMD QDs These devices include light-emitting diodes, solar cells, photodetectors, optical sensors, and light-controlled memory devices. Finally, a brief summary and outlook will be provided.
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Affiliation(s)
- Ching-Hsueh Chiu
- Department of Physics, Center for Nanotechnology, and Research Center for Crystalline Materials and Optoelectronic Characterization, Chung Yuan Christian University, Chung-Li, 320314, Taiwan
| | - Yu-Ting Chen
- Department of Physics, Center for Nanotechnology, and Research Center for Crystalline Materials and Optoelectronic Characterization, Chung Yuan Christian University, Chung-Li, 320314, Taiwan
| | - Ji-Lin Shen
- Department of Physics, Center for Nanotechnology, and Research Center for Crystalline Materials and Optoelectronic Characterization, Chung Yuan Christian University, Chung-Li, 320314, Taiwan
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Mohapatra D, Shin Y, Ansari MZ, Kim Y, Park YJ, Cheon T, Kim H, Lee JW, Kim S. Process Controlled Ruthenium on 2D Engineered V-MXene via Atomic Layer Deposition for Human Healthcare Monitoring. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2206355. [PMID: 36814343 PMCID: PMC10131817 DOI: 10.1002/advs.202206355] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/02/2022] [Revised: 01/31/2023] [Indexed: 06/18/2023]
Abstract
In searching for unique and unexplored 2D materials, the authors try to investigate for the very first time the use of delaminated V-MXene coupled with precious metal ruthenium (Ru) through atomic layer deposition (ALD) for various contact and noncontact mode of real-time temperature sensing applications at the human-machine interface. The novel delaminated V-MXene (DM-V2 CTx ) engineered ruthenium-ALD (Ru-ALD) temperature sensor demonstrates a competitive sensing performance of 1.11% °C-1 as of only V-MXene of 0.42% °C-1 . A nearly threefold increase in sensing and reversibility performance linked to the highly ordered few-layered V-MXene and selective, well-controlled Ru atomic doping by ALD for the successful formation of Ru@DM-V2 CTX heterostructure. The advanced heterostructure formation, the mechanism, and the role of Ru have been comprehensively investigated by ultra-high-resolution transmission/scanning transmission electron microscopies coupled with next-generation spherical aberration correction technology and fast, accurate elemental mapping quantifications, also by ultraviolet photoelectron spectroscopy. To the knowledge, this work is the first to use the novel, optimally processed V-MXene over conventionally used Ti-MXene and its surface-internal structure engineering by Ru-ALD process-based temperature-sensing devices function and operational demonstrations. The current work could potentially motivate the development of multifunctional, future, next-generation, safe, personal healthcare electronic devices by the industrially scalable ALD technique.
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Affiliation(s)
- Debananda Mohapatra
- School of Materials Science and EngineeringYeungnam UniversityGyeongsanGyeongbuk38541Republic of Korea
| | - Yujin Shin
- Department of Materials Science and EngineeringPusan National UniversityGeumjeong‐guBusan46241Republic of Korea
| | - Mohd Zahid Ansari
- School of Materials Science and EngineeringYeungnam UniversityGyeongsanGyeongbuk38541Republic of Korea
| | - Youn‐Hye Kim
- School of Materials Science and EngineeringYeungnam UniversityGyeongsanGyeongbuk38541Republic of Korea
| | - Ye Jin Park
- School of Materials Science and EngineeringYeungnam UniversityGyeongsanGyeongbuk38541Republic of Korea
| | - Taehoon Cheon
- Center for Core Research FacilitiesDaegu Gyeongbuk Institute of Science & Technology (DGIST)Sang‐ri, Hyeonpung‐myeonDalseong‐gunDaegu711‐873Republic of Korea
| | - Haekyoung Kim
- School of Materials Science and EngineeringYeungnam UniversityGyeongsanGyeongbuk38541Republic of Korea
| | - Jung Woo Lee
- Department of Materials Science and EngineeringPusan National UniversityGeumjeong‐guBusan46241Republic of Korea
| | - Soo‐Hyun Kim
- Graduate School of Semiconductor Materials and Devices EngineeringUlsan National Institute of Science and Technology (UNIST)Ulju‐gunUlsan44919Republic of Korea
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Lee G, Zarei M, Wei Q, Zhu Y, Lee SG. Surface Wrinkling for Flexible and Stretchable Sensors. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2203491. [PMID: 36047645 DOI: 10.1002/smll.202203491] [Citation(s) in RCA: 24] [Impact Index Per Article: 12.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/05/2022] [Revised: 08/07/2022] [Indexed: 06/15/2023]
Abstract
Recent advances in nanolithography, miniaturization, and material science, along with developments in wearable electronics, are pushing the frontiers of sensor technology into the large-scale fabrication of highly sensitive, flexible, stretchable, and multimodal detection systems. Various strategies, including surface engineering, have been developed to control the electrical and mechanical characteristics of sensors. In particular, surface wrinkling provides an effective alternative for improving both the sensing performance and mechanical deformability of flexible and stretchable sensors by releasing interfacial stress, preventing electrical failure, and enlarging surface areas. In this study, recent developments in the fabrication strategies of wrinkling structures for sensor applications are discussed. The fundamental mechanics, geometry control strategies, and various fabricating methods for wrinkling patterns are summarized. Furthermore, the current state of wrinkling approaches and their impacts on the development of various types of sensors, including strain, pressure, temperature, chemical, photodetectors, and multimodal sensors, are reviewed. Finally, existing wrinkling approaches, designs, and sensing strategies are extrapolated into future applications.
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Affiliation(s)
- Giwon Lee
- Department of Chemical and Biomolecular Engineering, North Carolina State University, Raleigh, NC, 27695, USA
- Department of Mechanical and Aerospace Engineering, North Carolina State University, Raleigh, NC, 27695, USA
| | - Mohammad Zarei
- Department of Chemistry, University of Ulsan, Ulsan, 44776, South Korea
| | - Qingshan Wei
- Department of Chemical and Biomolecular Engineering, North Carolina State University, Raleigh, NC, 27695, USA
| | - Yong Zhu
- Department of Mechanical and Aerospace Engineering, North Carolina State University, Raleigh, NC, 27695, USA
| | - Seung Goo Lee
- Department of Chemistry, University of Ulsan, Ulsan, 44776, South Korea
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Du K, Lin R, Yin L, Ho JS, Wang J, Lim CT. Electronic textiles for energy, sensing, and communication. iScience 2022; 25:104174. [PMID: 35479405 PMCID: PMC9035708 DOI: 10.1016/j.isci.2022.104174] [Citation(s) in RCA: 10] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/20/2022] Open
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Zhang J, Zhang X, Bi S. Two-Dimensional Quantum Dot-Based Electrochemical Biosensors. BIOSENSORS 2022; 12:bios12040254. [PMID: 35448314 PMCID: PMC9026491 DOI: 10.3390/bios12040254] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/23/2022] [Revised: 04/12/2022] [Accepted: 04/14/2022] [Indexed: 05/27/2023]
Abstract
Two-dimensional quantum dots (2D-QDs) derived from two-dimensional sheets have received increasing interest owing to their unique properties, such as large specific surface areas, abundant active sites, good aqueous dispersibility, excellent electrical property, easy functionalization, and so on. A variety of 2D-QDs have been developed based on different materials including graphene, black phosphorus, nitrides, transition metal dichalcogenides, transition metal oxides, and MXenes. These 2D-QDs share some common features due to the quantum confinement effects and they also possess unique properties owing to their structural differences. In this review, we discuss the categories, properties, and synthetic routes of these 2D-QDs and emphasize their applications in electrochemical biosensors. We deeply hope that this review not only stimulates more interest in 2D-QDs, but also promotes further development and applications of 2D-QDs in various research fields.
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Kolli CSR, Selamneni V, A Muñiz Martínez B, Fest Carreno A, Emanuel Sanchez D, Terrones M, Strupiechonski E, De Luna Bugallo A, Sahatiya P. Broadband, Ultra-High-Responsive Monolayer MoS 2/SnS 2 Quantum-Dot-Based Mixed-Dimensional Photodetector. ACS APPLIED MATERIALS & INTERFACES 2022; 14:15415-15425. [PMID: 35347994 DOI: 10.1021/acsami.2c02624] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Atomically thin two-dimensional (2D) materials have gained significant attention from the research community in the fabrication of high-performance optoelectronic devices. Even though there are various techniques to improve the responsivity of the photodetector, the key factor limiting the performance of the photodetectors is constrained photodetection spectral range in the electromagnetic spectrum. In this work, a mixed-dimensional 0D/2D SnS2-QDs/monolayer MoS2 hybrid is fabricated for high-performance and broadband (UV-visible-near-infrared (NIR)) photodetector. Monolayer MoS2 is deposited on SiO2/Si using chemical vapor deposition (CVD), and SnS2-QDs are prepared using a low-cost solution-processing method. The high performance of the fabricated 0D/2D photodetector is ascribed to the band bending and built-in potential created at the junction of SnS2-QDs and MoS2, which enhances the injection and separation efficiency of the photoexcited charge carriers. The mixed-dimensional structure also suppresses the dark current of the photodetector. The decorated SnS2-QDs on monolayer MoS2 not only improve the performance of the device but also extends the spectral range to the UV region. Photoresponsivity of the device for UV, visible, and NIR region is found to be ∼278, ∼ 435, and ∼189 A/W, respectively. Fabricated devices showed maximum responsivity under the visible region attributed to the high absorbance of monolayer MoS2. The response time of the fabricated device is measured as ∼100 ms. These results reveal that the development of a mixed-dimensional (0D/2D) SnS2-QDs/MoS2-based high-performance and broadband photodetector is technologically promising for next-generation optoelectronic applications.
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Affiliation(s)
| | - Venkatarao Selamneni
- Department of Electrical and Electronics Engineering, BITS Pilani Hyderabad Campus, Hyderabad 500078, India
| | | | - Andres Fest Carreno
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - David Emanuel Sanchez
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Mauricio Terrones
- Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | | | - Andres De Luna Bugallo
- Departamento de Nanotecnología, Centro de Física Aplicada y Tecnología Avanzada, Universidad Nacional Autónoma de México, Santiago de Querétaro CP 76000, Mexico
| | - Parikshit Sahatiya
- Department of Electrical and Electronics Engineering, BITS Pilani Hyderabad Campus, Hyderabad 500078, India
- Materials Center for Sustainable Energy & Environment, Birla Institute of Technology and Science Pilani, Hyderabad Campus, Hyderabad 500078, India
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Highly-Responsive Broadband Photodetector Based on Graphene-PTAA-SnS2 Hybrid. NANOMATERIALS 2022; 12:nano12030475. [PMID: 35159820 PMCID: PMC8839128 DOI: 10.3390/nano12030475] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/31/2021] [Revised: 01/26/2022] [Accepted: 01/26/2022] [Indexed: 12/10/2022]
Abstract
The development of wearable systems stimulate the exploration of flexible broadband photodetectors with high responsivity and stability. In this paper, we propose a facile liquid-exfoliating method to prepare SnS2 nanosheets with high-quality crystalline structure and optoelectronic properties. A flexible photodetector is fabricated using the SnS2 nanosheets with graphene-poly[bis(4-phenyl) (2,4,6-trimethylphenyl) amine (PTAA) hybrid structure. The liquid-exfoliated SnS2 nanosheets enable the photodetection from ultraviolet to near infrared with high responsivity and detectivity. The flexible broadband photodetector demonstrates a maximum responsivity of 1 × 105 A/W, 3.9 × 104 A/W, 8.6 × 102 A/W and 18.4 A/W under 360 nm, 405 nm, 532 nm, and 785 nm illuminations, with specific detectivity up to ~1012 Jones, ~1011 Jones, ~109 Jones, and ~108 Jones, respectively. Furthermore, the flexible photodetector exhibits nearly invariable performance over 3000 bending cycles, rendering great potentials for wearable applications.
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Sideri IK, Tagmatarchis N. Chemically modified carbon nanostructures and 2D nanomaterials for fabrics performing under operational tension and extreme environmental conditions. MATERIALS HORIZONS 2021; 8:3187-3200. [PMID: 34731229 DOI: 10.1039/d1mh01077h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
The extensive research on carbon nanostructures and 2D nanomaterials will come to fruition once these materials steadily join everyday-life applications. Their chemical functionalization unlocks their potential as carriers of customized properties and counterparts to fabric fibers. The scope of the current review covers the chemical modification of carbon nanostructures and 2D nanomaterials for hybrid fabrics with enhanced qualities against critical operational and weather conditions, such as antibacterial, flame retardant, UV resistant, water repellent and high air and water vapor permeability activities.
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Affiliation(s)
- Ioanna K Sideri
- Theoretical and Physical Chemistry, Institute National Hellenic Research Foundation, 48 Vassileos Constantinou Avenue, 11635 Athens, Greece.
| | - Nikos Tagmatarchis
- Theoretical and Physical Chemistry, Institute National Hellenic Research Foundation, 48 Vassileos Constantinou Avenue, 11635 Athens, Greece.
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