Single- versus Dual-Ion Conductors for Electric Double Layer Gating: Finite Element Modeling and Hall-Effect Measurements

Strain-Induced 2H to 1T' Phase Transition in Suspended MoTe2 Using Electric Double Layer Gating

MoTe2 can be converted from the semiconducting (2H) phase to the semimetallic (1T') phase by several stimuli including heat, electrochemical doping, and strain. This type of phase transition, if reversible and gate-controlled, could be useful for low-power memory and logic. In this work, a gate-controlled and fully reversible 2H to 1T' phase transition is demonstrated via strain in few-layer suspended MoTe2 field effect transistors. Strain is applied by the electric double layer gating of a suspended channel using a single ion conducting solid polymer electrolyte. The phase transition is confirmed by simultaneous electrical transport and Raman spectroscopy. The out-of-plane vibration peak (A1g)─a signature of the 1T' phase─is observed when VSG ≥ 2.5 V. Further, a redshift in the in-plane vibration mode (E2g) is detected, which is a characteristic of a strain-induced phonon shift. Based on the magnitude of the shift, strain is estimated to be 0.2-0.3% by density functional theory. Electrically, the temperature coefficient of resistance transitions from negative to positive at VSG ≥ 2 V, confirming the transition from semiconducting to metallic. The approach to gate-controlled, reversible straining presented here can be extended to strain other two-dimensional materials, explore fundamental material properties, and introduce electronic device functionalities.

Impact of Large Gate Voltages and Ultrathin Polymer Electrolytes on Carrier Density in Electric-Double-Layer-Gated Two-Dimensional Crystal Transistors

Electric-double-layer (EDL) gating can induce large capacitance densities (∼1-10 μF cm^-2) in two-dimensional (2D) semiconductors; however, several properties of the electrolyte limit performance. One property is the electrochemical activity which limits the gate voltage (V_G) that can be applied and therefore the maximum extent to which carriers can be modulated. A second property is electrolyte thickness, which sets the response speed of the EDL gate and therefore the time scale over which the channel can be doped. Typical thicknesses are on the order of micrometers, but thinner electrolytes (nanometers) are needed for very-large-scale-integration (VLSI) in terms of both physical thickness and the speed that accompanies scaling. In this study, finite element modeling of an EDL-gated field-effect transistor (FET) is used to self-consistently couple ion transport in the electrolyte to carrier transport in the semiconductor, in which density of states, and therefore quantum capacitance, is included. The model reveals that 50 to 65% of the applied potential drops across the semiconductor, leaving 35 to 50% to drop across the two EDLs. Accounting for the potential drop in the channel suggests that higher carrier densities can be achieved at larger applied V_G without concern for inducing electrochemical reactions. This insight is tested experimentally via Hall measurements of graphene FETs for which V_G is extended from ±3 to ±6 V. Doubling the gate voltage increases the sheet carrier density by an additional 2.3 × 10¹³ cm^-2 for electrons and 1.4 × 10¹³ cm^-2 for holes without inducing electrochemistry. To address the need for thickness scaling, the thickness of the solid polymer electrolyte, poly(ethylene oxide) (PEO):CsClO₄, is decreased from 1 μm to 10 nm and used to EDL gate graphene FETs. Sheet carrier density measurements on graphene Hall bars prove that the carrier densities remain constant throughout the measured thickness range (10 nm-1 μm). The results indicate promise for overcoming the physical and electrical limitations to VLSI while taking advantage of the ultrahigh carrier densities induced by EDL gating.

Photoluminescence Switching Effect in a Two-Dimensional Atomic Crystal

Two-dimensional materials are an emerging class of materials with a wide range of electrical and optical properties and potential applications. Single-layer structures of semiconducting transition metal dichalcogenides are gaining increasing attention for use in field-effect transistors. Here, we report a photoluminescence switching effect based on single-layer WSe₂ transistors. Dual gates are used to tune the photoluminescence intensity. In particular, a side-gate is utilized to control the location of ions within a solid polymer electrolyte to form an electric double layer at the interface of electrolyte and WSe₂ and induce a vertical electric field. Additionally, a back-gate is used to apply a second vertical electric field. An on-off ratio of the light emission up to 90 was observed under constant pump light intensity. In addition, a blue shift of the photoluminescence line up to 36 meV was observed. We attribute this blue shift to the decrease of exciton binding energy due to the change of nonlinear in-plane dielectric constant and use it to determine the third-order off-diagonal susceptibility χ⁽³⁾ = 3.50 × 10^-19 m²/V².

Ionic Liquid Containing Block Copolymer Dielectrics: Designing for High-Frequency Capacitance, Low-Voltage Operation, and Fast Switching Speeds

Polymerized ionic liquids (PILs) are a potential solution to the large-scale production of low-power consuming organic thin-film transistors (OTFTs). When used as the device gating medium in OTFTs, PILs experience a double-layer capacitance that enables thickness independent, low-voltage operation. PIL microstructure, polymer composition, and choice of anion have all been reported to have an effect on device performance, but a better structure property relationship is still required. A library of 27 well-defined, poly(styrene)-b-poly(1-(4-vinylbenzyl)-3-butylimidazolium-random-poly(ethylene glycol) methyl ether methacrylate) (poly(S)-b-poly(VBBI+[X]-r-PEGMA)) block copolymers, with varying PEGMA/VBBI+ ratios and three different mobile anions (where X = TFSI-, PF6 - or BF4 -), were synthesized, characterized and integrated into OTFTs. The fraction of VBBI+ in the poly(VBBI+[X]-r-PEGMA) block ranged from to 100 mol % and led to glass transition temperatures (T g) between -7 and 55 °C for that block. When VBBI+ composition was equal or above 50 mol %, the block copolymer self-assembled into well-ordered domains with sizes between 22 and 52 nm, depending on the composition and choice of anion. The block copolymers double-layer capacitance (C DL) and ionic conductivity (σ) were found to correlate to the polymer self-assembly and the T g of the poly(VBBI+[X]-r-PEGMA) block. Finally, the block copolymers were integrated into OTFTs as the gating medium that led to n-type devices with threshold voltages of 0.5-1.5 V while maintaining good electron mobilities. We also found that the greater the σ of the PIL, the greater the OTFT operating frequency could reach. However, we also found that C DL is not strictly proportional to OTFT output currents.