Boron-Loaded Polymeric Sensor for the Direct Detection of Thermal Neutrons

Large Scale BN-perovskite Nanocomposite Aerogel Scintillator for Thermal Neutron Detection

State-of-the-art thermal neutron scintillation detectors rely on rare isotopes for neutron capture, lack stability and scalability of solid-state scintillation devices, and poorly discriminate between the neutron and gamma rays. The boron nitride (BN)-CsPbBr₃ perovskite nanocomposite aerogel scintillator enables discriminative detection of thermal neutrons, features the largest known size (9 cm across), the lowest density (0.17 g cm^-3 ) among the existing scintillation materials, high BN (50%) perovskite (1%) contents, high optical transparency (85%), and excellent radiation stability. The new detection mechanism relies on thermal neutron capture by ¹⁰ B and effective energy transfer from the charged particles to visible-range scintillation photons between the densely packed BN and CsPbBr₃ nanocrystals. Low density minimizes the gamma ray response. The neutrons and gamma rays are discriminated by complete decoupling of the respective single pulses in time and intensity. These outcomes open new avenues for neutron detection in resource exploration, clean energy, environmental, aerospace, and homeland security applications.

Mixed 3D-2D Perovskite Flexible Films for the Direct Detection of 5 MeV Protons

This study reports on a novel, flexible, proton beam detector based on mixed 3D-2D perovskite films deposited by solution onto thin plastic foils. The 3D-2D mixture allows to obtain micrometer-thick and highly uniform films that constitute the detector's active layer. The devices demonstrate excellent flexibility with stable electric transport properties down to a bending radius of 3.1 mm. The detector is characterized under a 5 MeV proton beam with fluxes in the range [4.5 × 105 - 1.4 × 109 ] H+ cm-2 s-1 , exhibiting a stable response to repetitive irradiation cycles with sensitivity up to (290 ± 40) nC Gy-1 mm-3 and a limit of detection down to (72±2) µGy s-1 . The detector radiation tolerance is also assessed up to a total of 1.7 × 1012 protons impinging on the beam spot area, with a maximum variation of the detector's response of 14%.

Direct detection of 5-MeV protons by flexible organic thin-film devices

The direct detection of 5-MeV protons by flexible organic detectors based on thin films is here demonstrated. The organic devices act as a solid-state detector, in which the energy released by the protons within the active layer of the sensor is converted into an electrical current. These sensors can quantitatively and reliably measure the dose of protons impinging on the sensor both in real time and in integration mode. This study shows how to detect and exploit the energy absorbed both by the organic semiconducting layer and by the plastic substrate, allowing to extrapolate information on the present and past irradiation of the detector. The measured sensitivity, S = (5.15 ± 0.13) pC Gy^-1, and limit of detection, LOD = (30 ± 6) cGy s^-1, of the here proposed detectors assess their efficacy and their potential as proton dosimeters in several fields of application, such as in medical proton therapy.

Solution-Processed Donor-Acceptor Poly(3-hexylthiophene):Phenyl-C61-butyric Acid Methyl Ester Diodes for Low-Voltage α Particle Detection

Diodes fabricated using a blend of poly(3-hexylthiophene) and phenyl-C₆₁-butyric acid methyl ester (6-80 μm thick) as an organic semiconductor component achieved consistent 4 MeV α particle detection. Current-voltage characteristics and current-time measurements were obtained under α irradiation and in its absence. Steady-state and transient (time-of-flight) photoconduction measurements were additionally performed. Low-bias (<20 V) α particle detection gain-efficiency products of order 10^-2 were measured. The α particle detection was achieved reproducibly, reversibly, and repeatably in different devices of varying organic semiconductor layer thicknesses using both the steady-state and time-dependent (dynamic) diode responses. Conductive gain, due to trapped electrons, increased the α particle gain-efficiency product in both forward and reverse bias conditions as well as increasing steady-state photoconduction. The device thickness was optimized to maximize the gain-efficiency product by matching the penetration depth of the α particle, obtained by modeling, to the organic semiconductor layer thickness. Very high confidence α particle detection was achieved (with signal-to-noise ratios exceeding 20) under optimized device dimensions and drive conditions. Hecht function fitting of the gain-efficiency product versus electric field data returns mobility-lifetime products of order 10^-6-10^-7 cm² V^-1. This work demonstrates that solution-processed organic semiconductor diodes are viable for low-voltage α particle detection.