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Mandal S, Ghosh A, Sarkar P. Understanding the origin of the high thermoelectric figure of merit of Zintl-phase KCaBi. Phys Chem Chem Phys 2024; 26:13198-13208. [PMID: 38630446 DOI: 10.1039/d4cp01093k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/02/2024]
Abstract
Herein, we have investigated the unexplored thermoelectric properties of Zintl-phase KCaBi using first-principles calculation and the solution of the Boltzmann transport equation. KCaBi shows intrinsically very low lattice thermal conductivities (κl) along the (x(y), and z)-directions of (1.78, 0.68) and (1.15, 0.43) W m-1 K-1 at 300 and 800 K, respectively. Along with the effect of very low κl, the high figure of merit (ZT) for p-type KCaBi results from the high Seebeck coefficients (S) and optimal electrical conductivities (σ), which originate from the high and steep total density of state (TDOS) at the valence band edge and the less dispersed multi-valley nature of the valence band edge in the band structure. On the other hand, large ZT for n-type KCaBi results from moderate S and high σ caused by the sloped TDOS at the conduction band edge and the highly dispersed nature of the conduction band edge in the band structure, and very low values of κl. The highest ZT of KCaBi that we obtained at 800 K along the (x(y), and z)-directions was (1.83, 0.80) for the p-type case at a hole concentration of 1021 cm-3 and (1.36, 1.22) for the n-type case at electron concentration 7 × 1018 cm-3. Our study demonstrates that both p-type and n-type KCaBi have the potential to be promising thermoelectric materials.
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Affiliation(s)
- Sampad Mandal
- Department of Chemistry, Visva-Bharati, Santiniketan, 731235, India.
| | - Atish Ghosh
- Department of Chemistry, Visva-Bharati, Santiniketan, 731235, India.
| | - Pranab Sarkar
- Department of Chemistry, Visva-Bharati, Santiniketan, 731235, India.
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2
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Xia Y, Peng L, Shu L, Wu A, Shao H, Li B, Zhang J, Sui Z, Zhu H, Zhang H. Strong Intervalley Scattering-Induced Renormalization of Electronic and Thermal Transport Properties and Selection Rule Analysis in 2D Tellurium. ACS NANO 2024. [PMID: 38320191 DOI: 10.1021/acsnano.3c12457] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/08/2024]
Abstract
The electron-phonon interaction (EPI) and phonon-phonon interactions are ubiquitous in promising two-dimensional (2D) semiconductors, determining both electronic and thermal transport properties. In this work, based on ab initio calculations, the effects of intervalley scattering on EPI and higher-order four-phonon interactions of α-Te and β-Te are investigated. Through the proposed selection rules for scattering channels and calculations of full electron-phonon scattering rates, we demonstrate that multiple nearly degenerate local valleys/peaks produce more scattering channels, resulting in stronger intervalley scattering over intravalley scattering. The lattice thermal conductivities of α-Te and β-Te are decreased by as much as 10.9% and 30.8% by considering EPI under the carrier concentration of 2 × 1013 cm-2 (n-type) at 300 K compared to those limited by three-phonon scattering, respectively. However, when further considering four-phonon scattering, EPI reduces the lattice thermal conductivities by 2.6% and 19.4% for α-Te and β-Te, respectively. Furthermore, it is revealed that the four-phonon interaction is more dominant in phonon transport for α-Te than that for β-Te due to the presence of an acoustic-optical phonon gap in α-Te. Finally, we demonstrate strong intervalley scattering induces significant renormalization effects from EPI on all the constituent parameters of thermoelectric performance. Our results show the contributions of intervalley scattering to the electronic properties as well as thermal transport properties in band-convergent thermoelectric materials are essential and highlight the potential of monolayer tellurium as a promising candidate for advanced thermoelectric applications.
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Affiliation(s)
- Yujie Xia
- Key Laboratory of Micro and Nano Photonic Structures (MOE), Department of Optical Science and Engineering, School of Information Science and Technology, Fudan University, Shanghai 200433, China
| | - Lei Peng
- Key Laboratory of Micro and Nano Photonic Structures (MOE), Department of Optical Science and Engineering, School of Information Science and Technology, Fudan University, Shanghai 200433, China
| | - Le Shu
- Key Laboratory of Micro and Nano Photonic Structures (MOE), Department of Optical Science and Engineering, School of Information Science and Technology, Fudan University, Shanghai 200433, China
| | - Ao Wu
- Key Laboratory of Micro and Nano Photonic Structures (MOE), Department of Optical Science and Engineering, School of Information Science and Technology, Fudan University, Shanghai 200433, China
| | - Hezhu Shao
- College of Electrical and Electronic Engineering, Wenzhou University, Wenzhou, Zhejiang 325035, China
| | - Ben Li
- Key Laboratory of Micro and Nano Photonic Structures (MOE), Department of Optical Science and Engineering, School of Information Science and Technology, Fudan University, Shanghai 200433, China
| | - Juan Zhang
- Key Laboratory of Micro and Nano Photonic Structures (MOE), Department of Optical Science and Engineering, School of Information Science and Technology, Fudan University, Shanghai 200433, China
| | - Zhan Sui
- Shanghai Institute of Laser and Plasma, China Academy of Engineering Physics, 197 Chengzhong Road, Jiading, Shanghai 201800, China
| | - Heyuan Zhu
- Key Laboratory of Micro and Nano Photonic Structures (MOE), Department of Optical Science and Engineering, School of Information Science and Technology, Fudan University, Shanghai 200433, China
| | - Hao Zhang
- Key Laboratory of Micro and Nano Photonic Structures (MOE), Department of Optical Science and Engineering, School of Information Science and Technology, Fudan University, Shanghai 200433, China
- Yiwu Research Institute of Fudan University, Chengbei Road, Yiwu City, Zhejiang 322000, China
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Huang SZ, Fang CG, Guo JX, Wang BY, Yang HD, Feng QY, Li B, Xiang X, Zu XT, Deng HX. Boosting thermoelectric performance of HfSe 2 monolayer by selectivity chemical adsorption. J Colloid Interface Sci 2023; 639:14-23. [PMID: 36804787 DOI: 10.1016/j.jcis.2023.02.044] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/01/2023] [Revised: 01/29/2023] [Accepted: 02/10/2023] [Indexed: 02/13/2023]
Abstract
In this work, a strategy to boosting thermoelectric (TE) performance of 2D materials is explored. We find that, appropriate chemical adsorption of atoms can effectively increase the TE performance of HfSe2 monolayer. Our results show that the adsorption of Ni atom on HfSe2 monolayer (Ni-HfSe2) can improve the optimal power factor PF and ZT at 300 K, increased by more than ∼67% and ∼340%, respectively. The PF and ZT of Ni-HfSe2 at 300 K can reach 85.06 mW m-1 K-2 and 3.09, respectively. The detailed study reveal that the adsorption of Ni atom can induce additional conductional channels of electrons, enhance the coupling of acoustic-optical phonons and the phonon anharmonicity, resulting in an obvious increment of electrical conductivity (increased by more than ∼89%) in n-type doped system and an ultralow phonon thermal conductivity (1.17 W/mK at 300 K). The high electrical conductivity and ultralow phonon thermal conductivity results in the significant increments of PF and ZT. Our study also shows that, Ni-HfSe2 is a thermal, dynamic and mechanical stable structure, which can be employed in TE application. Our research indicates that selectivity chemical adsorption is a promising way to increase TE performance of 2D materials.
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Affiliation(s)
- Si-Zhao Huang
- School of Physics, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Cheng-Ge Fang
- China Academy of Launch Vehicle Technology, Beijing 10076, China
| | - Jia-Xing Guo
- School of Physics, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Bi-Yi Wang
- Science and Technology on Electro-Optical Information Security Control Laboratory, Tianjin 300308, China
| | - Hong-Dong Yang
- Shanghai Institute of Space Power-Sources, Shanghai 200245, China
| | - Qing-Yi Feng
- School of Physics, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Bo Li
- School of Physics, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Xia Xiang
- School of Physics, University of Electronic Science and Technology of China, Chengdu 611731, China.
| | - Xiao-Tao Zu
- School of Physics, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Hong-Xiang Deng
- School of Physics, University of Electronic Science and Technology of China, Chengdu 611731, China.
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Yan S, Wang Y, Tao F, Ren J. High-Throughput Estimation of Phonon Thermal Conductivity from First-Principles Calculations of Elasticity. J Phys Chem A 2022; 126:8771-8780. [DOI: 10.1021/acs.jpca.2c06286] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
Affiliation(s)
- Shenshen Yan
- Center for Phononics and Thermal Energy Science, China-EU Joint Lab on Nanophononics, Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Sciences and Engineering, Tongji University, Shanghai200092, China
| | - Yi Wang
- Center for Phononics and Thermal Energy Science, China-EU Joint Lab on Nanophononics, Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Sciences and Engineering, Tongji University, Shanghai200092, China
| | - Fang Tao
- Center for Phononics and Thermal Energy Science, China-EU Joint Lab on Nanophononics, Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Sciences and Engineering, Tongji University, Shanghai200092, China
| | - Jie Ren
- Center for Phononics and Thermal Energy Science, China-EU Joint Lab on Nanophononics, Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Sciences and Engineering, Tongji University, Shanghai200092, China
- Shanghai Research Institute for Intelligent Autonomous Systems, Tongji University, Shanghai200092, China
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Gayner C, Natanzon Y, Kauffmann Y, Amouyal Y. Topologically-Enhanced Thermoelectric Properties in Bi 2Te 3-Based Compounds: Effects of Grain Size and Misorientation. ACS APPLIED MATERIALS & INTERFACES 2022; 14:49730-49745. [PMID: 36286236 DOI: 10.1021/acsami.2c12843] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Topological insulators (TIs) and thermoelectric (TE) materials seem to belong to distinct physical realms; however, in practice, they both share common characteristics. Introducing concepts from TIs into TE materials to enhance their performance and achieve better understanding of electronic transport requires extensive research. Particularly, grain size, misorientation, and grain boundary (GB) character are of utmost importance to attain effective charge carrier transport in TE polycrystals; these factors, however, have not been thoroughly explored. Herein, we investigate the correlation between grain size, misorientation, and lattice strain in Bi2Te3 and its TI signature, aiming to improve its TE performance. We reveal an unusual behavior showing that electron mobility increases upon the increase of grain size, reaching at a maximum value of 495 cm2/V·s for an optimum grain size of 600 nm and most-frequent GB misorientation angle of 60° and then decreases with increasing grain size. It is also indicated that the combined effects of grain size reduction and point defects induce lattice strain in the Bi2Te3-matrix that is essential to trigger the TI contribution to TE transport. This trend is corroborated by first-principles calculations showing that compressive strains form multiple valleys in the valence band and opens the TI band gap. Such a combination of physical phenomena in a well-known TE material is unique and can promote our understanding of the nature of TE transport with implications for TE energy conversion.
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Affiliation(s)
- Chhatrasal Gayner
- Department of Materials Science and Engineering, Technion - Israel Institute of Technology, Haifa32000, Israel
| | - Yuriy Natanzon
- Department of Materials Science and Engineering, Technion - Israel Institute of Technology, Haifa32000, Israel
| | - Yaron Kauffmann
- Department of Materials Science and Engineering, Technion - Israel Institute of Technology, Haifa32000, Israel
| | - Yaron Amouyal
- Department of Materials Science and Engineering, Technion - Israel Institute of Technology, Haifa32000, Israel
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Zhang C, Sun J, Shen Y, Kang W, Wang Q. Effect of High Order Phonon Scattering on the Thermal Conductivity and Its Response to Strain of a Penta-NiN 2 Sheet. J Phys Chem Lett 2022; 13:5734-5741. [PMID: 35713616 DOI: 10.1021/acs.jpclett.2c01531] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Motivated by the recent synthesis of penta-NiN2, a new two-dimensional (2D) planar material entirely composed of pentagons [ ACS Nano 2021, 15, 13539], we study its thermal transport properties based on first-principles calculations and solving the Boltzmann transport equation within the self-consistent phonon theory and four-phonon scattering formalism. We find that the intrinsic lattice thermal conductivity of penta-NiN2 is 11.67 W/mK at room temperature, which is reduced by 89.32% as compared to the value obtained by only considering three-phonon scattering processes. More interestingly, different from the general response of thermal conductivity to external strain in most 2D materials, an oscillatory decrease of the thermal conductivity with increasing biaxial tensile strain is observed, which can be attributed to the renormalization of vibrational frequencies and the nonmonotonic variation of phonon scattering rates. This work provides an accurate intrinsic thermal conductivity of penta-NiN2 and elucidates the effects of the strain-tuned vibrational modes and phonon band gap on the four-phonon scattering processes, shedding light on a better understanding of the physical mechanisms of thermal transport properties in 2D pentagon-based materials.
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Affiliation(s)
- Chenxin Zhang
- School of Materials Science and Engineering, Center for Applied Physics and Technology, BKL-MEMD, Peking University, Beijing 100871, China
| | - Jie Sun
- School of Materials Science and Engineering, Center for Applied Physics and Technology, BKL-MEMD, Peking University, Beijing 100871, China
| | - Yiheng Shen
- School of Materials Science and Engineering, Center for Applied Physics and Technology, BKL-MEMD, Peking University, Beijing 100871, China
| | - Wei Kang
- Center for Applied Physics and Technology, College of Engineering, Peking University, Beijing 100871, China
| | - Qian Wang
- School of Materials Science and Engineering, Center for Applied Physics and Technology, BKL-MEMD, Peking University, Beijing 100871, China
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7
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Liu G, Guo A, Cao F, Ju W, Wang Z, Wang H, Li GL, Gao Z. Ultrahigh thermoelectric performance of Janus α-STe 2 and α-SeTe 2 monolayers. Phys Chem Chem Phys 2022; 24:28295-28305. [DOI: 10.1039/d2cp03659b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/17/2022]
Abstract
Janus α-STe2 and α-SeTe2 monolayers are investigated systematically using first-principles calculations combined with semiclassical Boltzmann transport theory.
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Affiliation(s)
- Gang Liu
- School of Physics and Engineering, Henan University of Science and Technology, Luoyang 471023, People's Republic of China
| | - Aiqing Guo
- School of Physics and Engineering, Henan University of Science and Technology, Luoyang 471023, People's Republic of China
| | - Fengli Cao
- School of Physics and Engineering, Henan University of Science and Technology, Luoyang 471023, People's Republic of China
| | - Weiwei Ju
- School of Physics and Engineering, Henan University of Science and Technology, Luoyang 471023, People's Republic of China
| | - Zhaowu Wang
- School of Physics and Engineering, Henan University of Science and Technology, Luoyang 471023, People's Republic of China
| | - Hui Wang
- School of Physics and Engineering, Henan University of Science and Technology, Luoyang 471023, People's Republic of China
| | - Guo-Ling Li
- Chemistry and Chemical Engineering Guangdong Laboratory, Shantou 515063, People's Republic of China
| | - Zhibin Gao
- State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049, People's Republic of China
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Chen SB, Liu G, Yan WJ, Hu CE, Chen XR, Geng HY. Biaxial Tensile Strain-Induced Enhancement of Thermoelectric Efficiency of α-Phase Se 2Te and SeTe 2 Monolayers. NANOMATERIALS (BASEL, SWITZERLAND) 2021; 12:40. [PMID: 35009989 PMCID: PMC8746480 DOI: 10.3390/nano12010040] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/04/2021] [Revised: 12/07/2021] [Accepted: 12/17/2021] [Indexed: 06/14/2023]
Abstract
Thermoelectric (TE) materials can convert waste heat into electrical energy, which has attracted great interest in recent years. In this paper, the effect of biaxial-tensile strain on the electronic properties, lattice thermal conductivity, and thermoelectric performance of α-phase Se2Te and SeTe2 monolayers are calculated based on density-functional theory and the semiclassical Boltzmann theory. The calculated results show that the tensile strain reduces the bandgap because the bond length between atoms enlarges. Moreover, the tensile strain strengthens the scatting rate while it weakens the group velocity and softens the phonon model, leading to lower lattice thermal conductivity kl. Simultaneously, combined with the weakened kl, the tensile strain can also effectively modulate the electronic transport coefficients, such as the electronic conductivity, Seebeck coefficient, and electronic thermal conductivity, to greatly enhance the ZT value. In particular, the maximum n-type doping ZT under 1% and 3% strain increases up to six and five times higher than the corresponding ZT without strain for the Se2Te and SeTe2 monolayers, respectively. Our calculations indicated that the tensile strain can effectively enhance the thermoelectric efficiency of Se2Te and SeTe2 monolayers and they have great potential as TE materials.
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Affiliation(s)
- Shao-Bo Chen
- College of Physics, Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610064, China;
- College of Electronic and Information Engineering, Anshun University, Anshun 561000, China;
| | - Gang Liu
- School of Physics and Engineering, Henan University of Science and Technology, Luoyang 471023, China;
| | - Wan-Jun Yan
- College of Electronic and Information Engineering, Anshun University, Anshun 561000, China;
| | - Cui-E Hu
- College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing 400047, China
| | - Xiang-Rong Chen
- College of Physics, Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610064, China;
| | - Hua-Yun Geng
- National Key Laboratory for Shock Wave and Detonation Physics Research, Institute of Fluid Physics, CAEP, Mianyang 621900, China;
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Zhang F, Qiu J, Guo H, Wu L, Zhu B, Zheng K, Li H, Wang Z, Chen X, Yu J. Theoretical investigations of novel Janus Pb 2SSe monolayer as a potential multifunctional material for piezoelectric, photovoltaic, and thermoelectric applications. NANOSCALE 2021; 13:15611-15623. [PMID: 34596184 DOI: 10.1039/d1nr03440e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Two-dimensional Janus nanomaterials, due to their unique electronic, optical, and piezoelectric characteristics resulting from the antisymmetric structures, exhibit great prospects in multifunctional energy application to alleviate the energy crisis. Monolayer Janus Pb2SSe, with a black phosphorus-like structure and an indirect band gap of 1.59 eV as well as high carrier mobility (526-2105 cm2 V-1 s-1), displays outstanding potentials in the energy conversion between nanomechanical energy, solar energy, waste heat, and electricity, which has been comprehensively studied utilizing DFT-based simulations. The research results reveal that monolayer Pb2SSe not only possesses giant in-plane piezoelectricity of d11 = 75.1 pm V-1 but also superhigh out-of-plane piezoelectric coefficients (d31 = 0.5 pm V-1 and d33 = 15.7 pm V-1). Meanwhile, by constructing Pb2SSe bilayers, the out-of-plane piezoelectric coefficients can be significantly enhanced (d31 = 19.2 pm V-1 and d33 = 194.7 pm V-1). In addition, owing to the small conduction band offset, suitable donor band gap and excellent light absorption capability in the Pb2SSe/SnSe (Pb2SSe/GeSe) heterostructure, the power conversion efficiencies were calculated to be up to 20.02% (Pb2SSe/SnSe) and 19.28% (Pb2SSe/GeSe), making it a promising candidate for solar energy collection. Furthermore, from the thermoelectric electron and phonon transport calculations, it can be found that the Pb2SSe monolayer is an n-type thermoelectric material with ultrahigh ZT = 2.19 (1.52) at room temperature, which can be traced back to its ultralow κL = 0.78 (0.99) W m-1 K-1, and superhigh PF = 10.18 (8.25) mW m-1 K-2 along the x(y) direction at the optimal doping concentration at 300 K. The abovementioned versatile characteristics in the Janus Pb2SSe monolayer, along with its comprehensive stabilities (energy, dynamic, thermal, and mechanical stabilities), highlight its potential in clean energy harvesting.
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Affiliation(s)
- Fusheng Zhang
- Key Laboratory of Optoelectronic Technology & Systems, Education Ministry of China, and College of Optoelectronic Engineering, State Key Laboratory of Power Transmission Equipment & System Security and New Technology, Chongqing University, Chongqing 400044, China.
| | - Jian Qiu
- Faculty of Mechanical and Electrical Engineering, Guilin University of Electronic Technology, Guilin 541004, China
| | - Haojie Guo
- Key Laboratory of Optoelectronic Technology & Systems, Education Ministry of China, and College of Optoelectronic Engineering, State Key Laboratory of Power Transmission Equipment & System Security and New Technology, Chongqing University, Chongqing 400044, China.
| | - Lingmei Wu
- Key Laboratory of Optoelectronic Technology & Systems, Education Ministry of China, and College of Optoelectronic Engineering, State Key Laboratory of Power Transmission Equipment & System Security and New Technology, Chongqing University, Chongqing 400044, China.
| | - Bao Zhu
- Faculty of Mechanical and Electrical Engineering, Guilin University of Electronic Technology, Guilin 541004, China
| | - Kai Zheng
- Key Laboratory of Optoelectronic Technology & Systems, Education Ministry of China, and College of Optoelectronic Engineering, State Key Laboratory of Power Transmission Equipment & System Security and New Technology, Chongqing University, Chongqing 400044, China.
| | - Hui Li
- Key Laboratory of Optoelectronic Technology & Systems, Education Ministry of China, and College of Optoelectronic Engineering, State Key Laboratory of Power Transmission Equipment & System Security and New Technology, Chongqing University, Chongqing 400044, China.
| | - Zeping Wang
- Key Laboratory of Optoelectronic Technology & Systems, Education Ministry of China, and College of Optoelectronic Engineering, State Key Laboratory of Power Transmission Equipment & System Security and New Technology, Chongqing University, Chongqing 400044, China.
| | - Xianping Chen
- Key Laboratory of Optoelectronic Technology & Systems, Education Ministry of China, and College of Optoelectronic Engineering, State Key Laboratory of Power Transmission Equipment & System Security and New Technology, Chongqing University, Chongqing 400044, China.
| | - Jiabing Yu
- Key Laboratory of Optoelectronic Technology & Systems, Education Ministry of China, and College of Optoelectronic Engineering, State Key Laboratory of Power Transmission Equipment & System Security and New Technology, Chongqing University, Chongqing 400044, China.
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Xia C, Zhao Y, Ma D, Li X, Zhang L. Strain-driven dynamic stability and anomalous enhancement of thermal conductivity in graphene-like IIA-VI monolayer monoxides. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2020; 33:065701. [PMID: 33108766 DOI: 10.1088/1361-648x/abc4f2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Graphene-like IIA-VI monolayer monoxides have been predicted to be novel two-dimensional materials with intrinsic bandgap, which makes them promising prospect for electronics and optoelectronics applications. In the field of microelectronics, heat dissipation is considered as the bottleneck that limits further development. Thus, the effective regulation in thermal transport is of great interest for designing novel devices. A systematic study in this work is carried out by first-principles method to explore thermal conductivity of these monoxides under strain. Compared with that of minimum strained MgO, CaO, SrO and BaO, the maximum thermal conductivity is increased by 3.25, 3.07, 1.50 and 1.53 times, respectively, under tensile strain. Detailed analysis shows that the weakened phonon-phonon scattering strength is the behind physical mechanism. It is also found that the tensile strain aids to improving the stability. Our work provides an attractive platform by studying the thermal transport of these monoxides under strain, suggesting the possible applications of these monolayers in novel devices.
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Affiliation(s)
- Chongqun Xia
- NNU-SULI Thermal Energy Research Center (NSTER) and Center for Quantum Transport and Thermal Energy Science (CQTES), School of Physics and Technology, Nanjing Normal University, Nanjing, 210023, People's Republic of China
| | - Yunshan Zhao
- NNU-SULI Thermal Energy Research Center (NSTER) and Center for Quantum Transport and Thermal Energy Science (CQTES), School of Physics and Technology, Nanjing Normal University, Nanjing, 210023, People's Republic of China
| | - Dengke Ma
- NNU-SULI Thermal Energy Research Center (NSTER) and Center for Quantum Transport and Thermal Energy Science (CQTES), School of Physics and Technology, Nanjing Normal University, Nanjing, 210023, People's Republic of China
| | - Xiuling Li
- NNU-SULI Thermal Energy Research Center (NSTER) and Center for Quantum Transport and Thermal Energy Science (CQTES), School of Physics and Technology, Nanjing Normal University, Nanjing, 210023, People's Republic of China
| | - Lifa Zhang
- NNU-SULI Thermal Energy Research Center (NSTER) and Center for Quantum Transport and Thermal Energy Science (CQTES), School of Physics and Technology, Nanjing Normal University, Nanjing, 210023, People's Republic of China
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