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Shin YJ, Kim HG, Choi SY, Kim SM, Kang JE, Han HW, Kim JM, Kim GH, Yeom GY. Effect of Bias Frequency on Bottom-Up SiO 2 Gap-Filling Using Plasma-Enhanced Atomic Layer Deposition. ACS APPLIED MATERIALS & INTERFACES 2024. [PMID: 39069792 DOI: 10.1021/acsami.4c06106] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/30/2024]
Abstract
High-aspect-ratio patterns are required for next-generation three-dimensional (3D) semiconductor devices. However, it is challenging to eliminate voids and seams during gap-filling of these high-aspect-ratio patterns, such as deep trenches, especially for nanoscale high-aspect-ratio patterns. In this study, a SiO2 plasma-enhanced atomic layer deposition process incorporated with ion collision using bias power to the substrate was used for bottom-up trench gap-filling. The effect of bias power frequency on SiO2 trench gap-filling was then investigated. Results showed that changes in bias power frequency did not significantly change the process rate, such as SiO2 growth per cycle. At relatively low bias power frequencies, high-energy ions formed an overhang at the entrance of the high-aspect-ratio trench pattern through sputter etching and redeposition, blocking the pattern entrance. However, at relatively high-frequency bias power, overhang formation due to sputtering did not occur. In the trench interior, due to a scattering effect of ions, deposition was thicker at the bottom of the trench than that at the top, achieving bottom-up gap-filling and void-free gap-filling.
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Affiliation(s)
- Ye Ji Shin
- Department of Advanced Materials and Science Engineering, Sungkyunkwan University (SKKU), Suwon-si, Gyeonggi-do 16419, Republic of Korea
| | - Ho Gon Kim
- Department of Advanced Materials and Science Engineering, Sungkyunkwan University (SKKU), Suwon-si, Gyeonggi-do 16419, Republic of Korea
| | - Seung Yup Choi
- Department of Advanced Materials and Science Engineering, Sungkyunkwan University (SKKU), Suwon-si, Gyeonggi-do 16419, Republic of Korea
| | - Seo Min Kim
- School of Chemical Engineering, Sungkyunkwan University (SKKU), Suwon-si, Gyeonggi-do 16419, Republic of Korea
| | - Ji Eun Kang
- Department of Advanced Materials and Science Engineering, Sungkyunkwan University (SKKU), Suwon-si, Gyeonggi-do 16419, Republic of Korea
| | - Hye Won Han
- Department of Semiconductor Convergence Engineering, Sungkyunkwan University (SKKU), Suwon-si, Gyeonggi-do 16419, Republic of Korea
| | - Ji Min Kim
- Department of Semiconductor Convergence Engineering, Sungkyunkwan University (SKKU), Suwon-si, Gyeonggi-do 16419, Republic of Korea
| | - Geun Hwi Kim
- Department of Advanced Materials and Science Engineering, Sungkyunkwan University (SKKU), Suwon-si, Gyeonggi-do 16419, Republic of Korea
| | - Geun Young Yeom
- Department of Advanced Materials and Science Engineering, Sungkyunkwan University (SKKU), Suwon-si, Gyeonggi-do 16419, Republic of Korea
- SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University, Suwon-si, Gyeonggi-do 16419, Republic of Korea
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Vemuri V, King SW, Thorpe R, Jones AH, Gaskins JT, Hopkins PE, Strandwitz NC. Chemical, Structural, and Electrical Changes in Molecular Layer-Deposited Hafnicone Thin Films after Thermal Processing. ACS APPLIED ELECTRONIC MATERIALS 2024; 6:5173-5182. [PMID: 39070087 PMCID: PMC11270827 DOI: 10.1021/acsaelm.4c00683] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/17/2024] [Revised: 06/13/2024] [Accepted: 06/13/2024] [Indexed: 07/30/2024]
Abstract
Post deposition annealing of molecular layer-deposited (MLD) hafnicone films was examined and compared to that of hafnium oxide atomic layer-deposited (ALD) films. Hafnicone films were deposited using tetrakis(dimethylamido)hafnium (TDMAH), and ethylene glycol and hafnia films were deposited using TDMAH and water at 120 °C. The changes in the properties of the as-deposited hafnicone films with annealing were probed by various techniques and then compared to the as-deposited and annealed ALD hafnia films. In situ X-ray reflectivity indicated a 70% decrease in thickness and ∼100% increase in density upon heating to 400 °C yet the density remained lower than that of hafnia control samples. The largest decreases in thickness of the hafnicone films were observed from 150 to 350 °C. In situ X-ray diffraction indicated an increase in the temperature required for crystallization in the hafnicone films (600 °C) relative to the hafnia films (350 °C). The changes in chemistry of the hafnicone films annealed with and without UV exposure were probed using Fourier transformed infrared spectroscopy and X-ray photoelectron spectroscopy with no significant differences attributed to the UV exposure. The hafnicone films exhibited lower dielectric constants than hafnia control samples over the entire temperature range examined. The CF4/O2 etch rate of the hafnicone films was comparable to the etch rate of hafnia films after annealing at 350 °C. The thermal conductivity of the hafnicone films initially decreased with thermal processing (up to 250 °C) and then increased (350 °C), likely due to porosity generation and subsequent densification, respectively. This work demonstrates that annealing MLD films is a promising strategy for generating thin films with a low density and relative permittivity.
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Affiliation(s)
- Vamseedhara Vemuri
- Department
of Materials Science and Engineering, Lehigh
University, Bethlehem, Pennsylvania 18015, United States
| | - Sean W. King
- Logic
Technology Development, Intel Corporation, Hillsboro, Oregon 97124, United States
| | - Ryan Thorpe
- Institute
for Functional Materials and Devices, Lehigh
University, Bethlehem, Pennsylvania 18015-3027, United States
| | - Andrew H. Jones
- Laser
Thermal Analysis, Inc., Charlottesville, Virginia 22902, United States
| | - John T. Gaskins
- Laser
Thermal Analysis, Inc., Charlottesville, Virginia 22902, United States
| | - Patrick E. Hopkins
- Department
of Materials Science and Engineering, University
of Virginia, Charlottesville, Virginia 22904, United States
- Department
of Physics, University of Virginia, Charlottesville, Virginia 22904, United States
| | - Nicholas C. Strandwitz
- Department
of Materials Science and Engineering, Lehigh
University, Bethlehem, Pennsylvania 18015, United States
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Lin Z, Song C, Liu T, Shao J, Zhu M. Comparative Study of Plasma-Enhanced-Atomic-Layer-Deposited Al 2O 3/HfO 2/SiO 2 and HfO 2/Al 2O 3/SiO 2 Trilayers for Ultraviolet Laser Applications. ACS APPLIED MATERIALS & INTERFACES 2024; 16:31756-31767. [PMID: 38837185 DOI: 10.1021/acsami.4c03747] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2024]
Abstract
High-performance thin films combining large optical bandgap Al2O3 and high refractive index HfO2 are excellent components for constructing the next generation of laser systems with enhanced output power. However, the growth of low-defect plasma-enhanced-atomic-layer-deposited (PEALD) Al2O3 for high-power laser applications and its combination with HfO2 and SiO2 materials commonly used in high-power laser thin films still face challenges, such as how to minimize defects, especially interface defects. In this work, substrate-layer interface defects in Al2O3 single-layer thin films, layer-layer interface defects in Al2O3-based bilayer and trilayer thin films, and their effects on the laser-induced damage threshold (LIDT) were investigated via capacitance-voltage (C-V) measurements. The experimental results show that by optimizing the deposition parameters, specifically the deposition temperature, precursor exposure time, and plasma oxygen exposure time, Al2O3 thin films with low defect density and high LIDT can be obtained. Two trilayer anti-reflection (AR) thin film structures, Al2O3/HfO2/SiO2 and HfO2/Al2O3/SiO2, were then prepared and compared. The trilayer AR thin film with Al2O3/HfO2/SiO2 structure exhibits a lower interface defect density, better interface bonding performance, and an increase in LIDT by approximately 2.8 times. We believe these results provide guidance for the control of interface defects and the design of thin film structures and will benefit many thin film optics for laser applications.
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Affiliation(s)
- Zesheng Lin
- Laboratory of Thin Film Optics, Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Chen Song
- Laboratory of Thin Film Optics, Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
| | - Tianbao Liu
- Laboratory of Thin Film Optics, Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jianda Shao
- Laboratory of Thin Film Optics, Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
- CAS Center for Excellence in Ultra-intense Laser Science, Shanghai 201800, China
| | - Meiping Zhu
- Laboratory of Thin Film Optics, Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
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Beladiya V, Faraz T, Schmitt P, Munser AS, Schröder S, Riese S, Mühlig C, Schachtler D, Steger F, Botha R, Otto F, Fritz T, van Helvoirt C, Kessels WMM, Gargouri H, Szeghalmi A. Plasma-Enhanced Atomic Layer Deposition of HfO 2 with Substrate Biasing: Thin Films for High-Reflective Mirrors. ACS APPLIED MATERIALS & INTERFACES 2022; 14:14677-14692. [PMID: 35311275 DOI: 10.1021/acsami.1c21889] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Tuning ion energies in plasma-enhanced atomic layer deposition (PEALD) processes enables fine control over the material properties of functional coatings. The growth, structural, mechanical, and optical properties of HfO2 thin films are presented in detail toward photonic applications. The influence of the film thickness and bias value on the properties of HfO2 thin films deposited at 100 °C using tetrakis(dimethylamino)hafnium (TDMAH) and oxygen plasma using substrate biasing is systematically analyzed. The HfO2 films deposited without a substrate bias show an amorphous microstructure with a low density, low refractive index, high incorporation of residual hydroxyl (OH) content, and high residual tensile stress. The material properties of HfO2 films significantly improved at a low bias voltage due to the interaction with oxygen ions accelerated to the film. Such HfO2 films have a higher density, higher refractive index, and lower residual OH incorporation than films without bias. The mechanical stress becomes compressive depending on the bias values. Further increasing the ion energies by applying a larger substrate bias results in a decrease of the film density, refractive index, and a higher residual OH incorporation as well as crystalline inclusions. The comparable material properties of the HfO2 films have been reported using tris(dimethylamino)cyclopentadienyl hafnium (TDMACpH) in a different apparatus, indicating that this approach can be transferred to various systems and is highly versatile. Finally, the substrate biasing technique has been introduced to deposit stress-compensated, crack- and delamination-free high-reflective (HR) mirrors at 355 and 532 nm wavelengths using HfO2 and SiO2 as high and low refractive index materials, respectively. Such mirrors could not be obtained without the substrate biasing during the deposition because of the high tensile stress of HfO2, leading to cracks in thick multilayer systems. An HR mirror for 532 nm wavelength shows a high reflectance of 99.93%, a residual transmittance of ∼530 ppm, and a low absorption of ∼11 ppm, as well as low scattering losses of ∼4 ppm, high laser-induced damage threshold, low mechanical stress, and high environmental stability.
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Affiliation(s)
- Vivek Beladiya
- Institute of Applied Physics, Friedrich Schiller University Jena, Albert-Einstein Str. 15, 07745 Jena, Germany
- Fraunhofer Institute for Applied Optics and Precision Engineering, Albert-Einstein-Str. 7, 07745 Jena, Germany
| | - Tahsin Faraz
- Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
| | - Paul Schmitt
- Institute of Applied Physics, Friedrich Schiller University Jena, Albert-Einstein Str. 15, 07745 Jena, Germany
- Fraunhofer Institute for Applied Optics and Precision Engineering, Albert-Einstein-Str. 7, 07745 Jena, Germany
| | - Anne-Sophie Munser
- Institute of Applied Physics, Friedrich Schiller University Jena, Albert-Einstein Str. 15, 07745 Jena, Germany
- Fraunhofer Institute for Applied Optics and Precision Engineering, Albert-Einstein-Str. 7, 07745 Jena, Germany
| | - Sven Schröder
- Fraunhofer Institute for Applied Optics and Precision Engineering, Albert-Einstein-Str. 7, 07745 Jena, Germany
| | | | - Christian Mühlig
- Leibniz-Institute of Photonic Technology, Albert-Einstein-Str. 9, 07745 Jena, Germany
| | | | - Fabian Steger
- RhySearch, Werdenbergstrasse 4, 9471 Buchs, Switzerland
| | - Roelene Botha
- RhySearch, Werdenbergstrasse 4, 9471 Buchs, Switzerland
| | - Felix Otto
- Institute of Solid State Physics, Friedrich Schiller University Jena, Helmholtzweg 5, 07743 Jena, Germany
| | - Torsten Fritz
- Institute of Solid State Physics, Friedrich Schiller University Jena, Helmholtzweg 5, 07743 Jena, Germany
| | - Christian van Helvoirt
- Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
| | - Wilhelmus M M Kessels
- Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
| | - Hassan Gargouri
- Sentech Instruments GmbH, Schwarzschildstraße 2, 12489 Berlin, Germany
| | - Adriana Szeghalmi
- Institute of Applied Physics, Friedrich Schiller University Jena, Albert-Einstein Str. 15, 07745 Jena, Germany
- Fraunhofer Institute for Applied Optics and Precision Engineering, Albert-Einstein-Str. 7, 07745 Jena, Germany
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Properties of Al2O3 Thin Films Grown by PE-ALD at Low Temperature Using H2O and O2 Plasma Oxidants. COATINGS 2021. [DOI: 10.3390/coatings11101266] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
Abstract
Al2O3 layers with thicknesses in the 25–120 nm range were deposited by plasma enhanced atomic layer deposition at 70 °C. Trimethylaluminum was used as organometallic precursor, O2 and H2O as oxidant agents and Ar as a purge gas. The deposition cycle consisted of 50 ms TMA pulse/10 s purge time/6 s of plasma oxidation at 200 W/10 s purge time. The optical constants and thicknesses of the grown layers were determined by spectroscopic ellipsometry, while the roughness was measured by atomic force microscopy, giving RMS values in the 0.29–0.32 nm range for films deposited under different conditions and having different thicknesses. High transmittance, ~90%, was measured by UV–Vis spectroscopy. X-ray photoelectron spectroscopy revealed that, with both types of oxidants, the obtained films are close to stoichiometric composition and, with high purity, no carbon was detected. Electrical characterization showed good insulating properties of both types of films, though the H2O oxidant leads to better I-V characteristics.
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