Tailoring Multi-Walled Carbon Nanotubes into Graphene Quantum Sheets

Tailoring Graphite into Subnanometer Graphene

Within the intersection of materials science and nanoscience/technology, extremely downsized (including quantum-sized and subnanometer-sized) materials attract increasing interest. However, the effective and controllable production of extremely downsized materials through physical strategies remains a great challenge. Herein, an all-physical top-down method for the production of sub-1 nm graphene with completely broken lattice is reported. The graphene subnanometer materials (GSNs) with monolayer structures and lateral sizes of ≈0.5 nm are obtained. Compared with their bulk, nanosheets, and quantum sheets, the intrinsic GSNs present extremely enhanced photoluminescence and nonlinear saturation absorption performances, as well as unique carrier behavior. The non-equilibrium states induced by the entirely exposed and broken, intrinsic lattices in sub-1 nm graphene can be determinative to their extreme performances. This work shows the great potential of broken lattice and provides new insights toward subnanometer materials.

Quantum-sized topological insulators/semimetals enable ultrahigh and broadband saturable absorption

Two-dimensional topological insulators/semimetals have recently attracted much attention. However, quantum-sized topological insulators/semimetals with intrinsic characteristics have never been reported before. Herein, we report the high-yield production of topological insulator (i.e., Bi2Se3 and Sb2Te3) and semimetal (i.e., TiS2) quantum sheets (QSs) with monolayer structures and sub-4 nm lateral sizes. Both linear and nonlinear optical performances of the QSs are investigated. The QS dispersions present remarkable photoluminescence with excitation wavelength-, concentration-, and solvent-dependence. The solution-processed QSs-poly(methyl methacrylate) (PMMA) hybrid thin films demonstrate exceptional nonlinear saturation absorption (NSA). Particularly, Bi2Se3 QSs-PMMA enables record-high NSA performance with a broadband feature. Specifically, the (absolute) modulation depths up to 71.6 and 72.4% and saturation intensities down to 1.52 and 0.49 MW cm-2 are achieved at 532 and 800 nm, respectively. Such a phenomenal NSA performance would greatly facilitate their applications in mode-locked lasers and related fields.

Ti3AlC2 MAX and Ti3C2 MXene Quantum Sheets for Record-High Optical Nonlinearity

Two-dimensional (2D) transition-metal carbides (MXenes) have attracted great interest owing to their unique structures and superior properties compared to those of traditional 2D materials. The transformation of 2D MXenes into sub-5-nm quantum sheets (QSs) is urgently required but rarely reported. Herein, the Ti₃AlC₂ MAX and Ti₃C₂ MXene QSs with monolayer structures and sub-5-nm lateral sizes are demonstrated. Exceptionally high yields (>15 wt %) are obtained through an all-physical top-down method. The QS dispersions present unique photoluminescence, and the QSs-poly(methyl methacrylate) (PMMA) hybrid thin films demonstrate remarkable nonlinear saturation absorption (NSA). Absolute modulation depths of 30.6 and 49.9% and saturation intensities of 1.16 and 1.25 MW cm^-2 (i.e., 116 and 125 nJ cm^-2) are achieved for Ti₃AlC₂ QSs and Ti₃C₂ QSs, respectively. Such record-high NSA performances of MXene QSs would boost the application of MAX/MXene materials in nonlinear optics.

Scalable production of intrinsic WX2(X = S, Se, Te) quantum sheets for efficient hydrogen evolution electrocatalysis

Mass production of transition-metal dichalcogenides has attracted much attention to replace platinum-based catalysts for the hydrogen evolution reaction (HER). Herein, we demonstrate a general strategy for the scalable production of the intrinsic tungsten dichalcogenide (WX₂(X = S, Se, Te)) quantum sheets (QSs) by an all-physical top-down method. The method combines silica-assisted ball-milling and sonication-assisted solvent exfoliation and thus enables production of WS₂QSs, WSe₂QSs, and WTe₂QSs in exceedingly high yields of 28.2, 21.3, 19.9 wt%, respectively. The WX₂QSs are confirmed as intrinsic and defect-free, which could be determinative to their improved HER performance. The overpotentials of 285, 331, 435 mV at the current density of 10 mA cm^-2and Tafel slopes of 116, 78, 162 mV dec^-1in acidic media, as well as charge transfer resistance values of 171, 242, 1973 Ω, are derived for WS₂QSs, WSe₂QSs, and WTe₂QSs, respectively, which are much better than those of bulk materials. The WX₂QSs exhibit high stability during the electrocatalysis as well. This work offers a powerful approach for fabrication of intrinsic QSs as efficient and robust electrocatalysts.

A general strategy for semiconductor quantum dot production

Mass production of semiconductor quantum dots (QDs) from bulk materials is highly desired but far from being satisfactory. Herein, we report a general strategy to mechanically tailor semiconductor bulk materials into QDs. Semiconductor bulk materials are routinely available via simple chemical precipitation. From their bulk materials, a variety of semiconductor (e.g., lead sulfide (PbS), cadmium sulfide (CdS), copper sulfide (CuS), ferrous sulfide (FeS), and zinc sulfide (ZnS)) QDs are successfully produced in high yields (>15 wt%). This is achieved by a combination of silica-assisted ball-milling and sonication-assisted solvent treatment. The as-produced QDs show intrinsic characteristics and outstanding water solubility (up to 5 mg mL^-1), facilitating their practical applications. The QD dispersions present remarkable photoluminescence (PL) with exciton-dependence and nanosecond (ns)-scale lifetimes. The QDs-poly(methyl methacrylate) (PMMA) hybrid thin films demonstrate exciting solid-state fluorescence and exceptional nonlinear saturation absorption (NSA). Absolute modulation depths of up to 58% and saturation intensities down to 0.40 MW cm^-2 were obtained. Our strategy could be applied to any semiconductor bulk materials and therefore paves the way for the construction of the complete library of semiconductor QDs.