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Chen Y, Chen J, Li Z. Cold Cathodes with Two-Dimensional van der Waals Materials. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2437. [PMID: 37686945 PMCID: PMC10490007 DOI: 10.3390/nano13172437] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/12/2023] [Revised: 08/07/2023] [Accepted: 08/14/2023] [Indexed: 09/10/2023]
Abstract
Two-dimensional van der Waals materials could be used as electron emitters alone or stacked in a heterostructure. Many significant phenomena of two-dimensional van der Waals field emitters have been observed and predicted since the landmark discovery of graphene. Due to the wide variety of heterostructures that integrate an atomic monolayer or multilayers with insulator nanofilms or metallic cathodes by van der Waals force, the diversity of van der Waals materials is large to be chosen from, which are appealing for further investigation. Until now, increasing the efficiency, stability, and uniformity in electron emission of cold cathodes with two-dimensional materials is still of interest in research. Some novel behaviors in electron emission, such as coherence and directionality, have been revealed by the theoretical study down to the atomic scale and could lead to innovative applications. Although intensive emission in the direction normal to two-dimensional emitters has been observed in experiments, the theoretical mechanism is still incomplete. In this paper, we will review some late progresses related to the cold cathodes with two-dimensional van der Waals materials, both in experiments and in the theoretical study, emphasizing the phenomena which are absent in the conventional cold cathodes. The review will cover the fabrication of several kinds of emitter structures for field emission applications, the state of the art of their field emission properties and the existing field emission model. In the end, some perspectives on their future research trend will also be given.
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Affiliation(s)
- Yicong Chen
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technologies, Sun Yat-Sen University, Guangzhou 510275, China
| | - Jun Chen
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technologies, Sun Yat-Sen University, Guangzhou 510275, China
| | - Zhibing Li
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Science, Sun Yat-Sen University, Shenzhen 518000, China
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Pham PV, Bodepudi SC, Shehzad K, Liu Y, Xu Y, Yu B, Duan X. 2D Heterostructures for Ubiquitous Electronics and Optoelectronics: Principles, Opportunities, and Challenges. Chem Rev 2022; 122:6514-6613. [PMID: 35133801 DOI: 10.1021/acs.chemrev.1c00735] [Citation(s) in RCA: 102] [Impact Index Per Article: 51.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/07/2023]
Abstract
A grand family of two-dimensional (2D) materials and their heterostructures have been discovered through the extensive experimental and theoretical efforts of chemists, material scientists, physicists, and technologists. These pioneering works contribute to realizing the fundamental platforms to explore and analyze new physical/chemical properties and technological phenomena at the micro-nano-pico scales. Engineering 2D van der Waals (vdW) materials and their heterostructures via chemical and physical methods with a suitable choice of stacking order, thickness, and interlayer interactions enable exotic carrier dynamics, showing potential in high-frequency electronics, broadband optoelectronics, low-power neuromorphic computing, and ubiquitous electronics. This comprehensive review addresses recent advances in terms of representative 2D materials, the general fabrication methods, and characterization techniques and the vital role of the physical parameters affecting the quality of 2D heterostructures. The main emphasis is on 2D heterostructures and 3D-bulk (3D) hybrid systems exhibiting intrinsic quantum mechanical responses in the optical, valley, and topological states. Finally, we discuss the universality of 2D heterostructures with representative applications and trends for future electronics and optoelectronics (FEO) under the challenges and opportunities from physical, nanotechnological, and material synthesis perspectives.
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Affiliation(s)
- Phuong V Pham
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Srikrishna Chanakya Bodepudi
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Khurram Shehzad
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Yuan Liu
- School of Physics and Electronics, Hunan University, Hunan 410082, China
| | - Yang Xu
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Bin Yu
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Xiangfeng Duan
- Department of Chemistry and Biochemistry, University of California, Los Angeles (UCLA), Los Angeles, California 90095-1569, United States
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Zhou S, Chen K, Cole MT, Li Z, Li M, Chen J, Lienau C, Li C, Dai Q. Ultrafast Electron Tunneling Devices-From Electric-Field Driven to Optical-Field Driven. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2101449. [PMID: 34240495 DOI: 10.1002/adma.202101449] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/20/2021] [Revised: 04/05/2021] [Indexed: 06/13/2023]
Abstract
The search for ever higher frequency information processing has become an area of intense research activity within the micro, nano, and optoelectronics communities. Compared to conventional semiconductor-based diffusive transport electron devices, electron tunneling devices provide significantly faster response times due to near-instantaneous tunneling that occurs at sub-femtosecond timescales. As a result, the enhanced performance of electron tunneling devices is demonstrated, time and again, to reimagine a wide variety of traditional electronic devices with a variety of new "lightwave electronics" emerging, each capable of reducing the electron transport channel transit time down to attosecond timescales. In response to unprecedented rapid progress within this field, here the current state-of-the-art in electron tunneling devices is reviewed, current challenges and opportunities are highlighted, and possible future research directions are identified.
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Affiliation(s)
- Shenghan Zhou
- CAS Key Laboratory of Nanophotonic Materials and Devices, CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Ke Chen
- CAS Key Laboratory of Nanophotonic Materials and Devices, CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Matthew Thomas Cole
- Department of Electronic and Electrical Engineering, University of Bath, Bath, BA2 7AY, UK
| | - Zhenjun Li
- CAS Key Laboratory of Nanophotonic Materials and Devices, CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Mo Li
- School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, P. R. China
| | - Jun Chen
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275, P. R. China
| | - Christoph Lienau
- Institut für Physik, Center of Interface Science, Carl von Ossietzky Universität, 26129, Oldenburg, Germany
| | - Chi Li
- CAS Key Laboratory of Nanophotonic Materials and Devices, CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Qing Dai
- CAS Key Laboratory of Nanophotonic Materials and Devices, CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
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Ahmed I, Shi L, Pasanen H, Vivo P, Maity P, Hatamvand M, Zhan Y. There is plenty of room at the top: generation of hot charge carriers and their applications in perovskite and other semiconductor-based optoelectronic devices. LIGHT, SCIENCE & APPLICATIONS 2021; 10:174. [PMID: 34465725 PMCID: PMC8408272 DOI: 10.1038/s41377-021-00609-3] [Citation(s) in RCA: 14] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/08/2021] [Revised: 07/22/2021] [Accepted: 07/31/2021] [Indexed: 06/13/2023]
Abstract
Hot charge carriers (HC) are photoexcited electrons and holes that exist in nonequilibrium high-energy states of photoactive materials. Prolonged cooling time and rapid extraction are the current challenges for the development of future innovative HC-based optoelectronic devices, such as HC solar cells (HCSCs), hot energy transistors (HETs), HC photocatalytic reactors, and lasing devices. Based on a thorough analysis of the basic mechanisms of HC generation, thermalization, and cooling dynamics, this review outlines the various possible strategies to delay the HC cooling as well as to speed up their extraction. Various materials with slow cooling behavior, including perovskites and other semiconductors, are thoroughly presented. In addition, the opportunities for the generation of plasmon-induced HC through surface plasmon resonance and their technological applications in hybrid nanostructures are discussed in detail. By judiciously designing the plasmonic nanostructures, the light coupling into the photoactive layer and its optical absorption can be greatly enhanced as well as the successful conversion of incident photons to HC with tunable energies can also be realized. Finally, the future outlook of HC in optoelectronics is highlighted which will provide great insight to the research community.
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Affiliation(s)
- Irfan Ahmed
- State Key Laboratory of ASIC and System, Centre of Micro-Nano System, SIST, Fudan University, 200433, Shanghai, China.
- Department of Physics, Government Postgraduate College, (Higher Education Department-HED) Khyber Pakhtunkhwa, 21300, Mansehra, Pakistan.
| | - Lei Shi
- State Key Laboratory of Surface Physics, Key Laboratory of Micro- and Nano-Photonics, Fudan University, 200433, Shanghai, China
| | - Hannu Pasanen
- Faculty of Engineering and Natural Sciences, Tampere University, FI-33014, Tampere, Finland
| | - Paola Vivo
- Faculty of Engineering and Natural Sciences, Tampere University, FI-33014, Tampere, Finland
| | - Partha Maity
- KAUST Solar Center, Division of Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Riyadh, Kingdom of Saudi Arabia
| | - Mohammad Hatamvand
- State Key Laboratory of ASIC and System, Centre of Micro-Nano System, SIST, Fudan University, 200433, Shanghai, China
| | - Yiqiang Zhan
- State Key Laboratory of ASIC and System, Centre of Micro-Nano System, SIST, Fudan University, 200433, Shanghai, China.
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