Bienenstock-Cooper-Munro Learning Rule Realized in Polysaccharide-Gated Synaptic Transistors with Tunable Threshold

An Au25 nanocluster/MoS2 vdWaals heterojunction phototransistor for chromamorphic visual-afterimage emulation

Color vision relies on three cone photoreceptors that are sensitive to different wavelengths of light. The interaction of three incident light wavelengths over time creates a fascinating color coupling perception, termed chromamorphic computing. However, the realization of this fascinating characteristic in semiconductor devices remains a great challenge. Herein, a mixed-dimensional optoelectronic transistor based on a novel metal nanocluster Au25(SC12H25)18 and two-dimensional MoS2 van der Waals (vdWaals) heterojunction is proposed for chromamorphic visual-afterimage emulation with red-green-blue three-color spatiotemporal coupling perception. This distinguished molecular-like electronic level of Au25 nanoclusters allows the transistor to have visible light-sensitive properties, endowing it with the ability to perceive color information. Moreover, the chromamorphic functions are realized using a color spatiotemporal coupling approach. By utilizing the photogating effect of light stimulus, the device exhibits visual experience-dependent plasticity in accordance with the Bienenstock-Cooper-Munro (BCM) learning rule. Most importantly, for the first time, intriguing visual afterimages could be implemented using a color sensitization approach based on a close relationship between visual persistence and negative afterimages. These results represent an important step towards a new generation of intelligent visual color perception systems for human-computer interaction, bionic robots, etc.

Dual-Adaptive Heterojunction Synaptic Transistors for Efficient Machine Vision in Harsh Lighting Conditions

Photoadaptive synaptic devices enable in-sensor processing of complex illumination scenes, while second-order adaptive synaptic plasticity improves learning efficiency by modifying the learning rate in a given environment. The integration of above adaptations in one phototransistor device will provide opportunities for developing high-efficient machine vision system. Here, a dually adaptable organic heterojunction transistor as a working unit in the system, which facilitates precise contrast enhancement and improves convergence rate under harsh lighting conditions, is reported. The photoadaptive threshold sliding originates from the bidirectional photoconductivity caused by the light intensity-dependent photogating effect. Metaplasticity is successfully implemented owing to the combination of ambipolar behavior and charge trapping effect. By utilizing the transistor array in a machine vision system, the details and edges can be highlighted in the 0.4% low-contrast images, and a high recognition accuracy of 93.8% with a significantly promoted convergence rate by about 5 times are also achieved. These results open a strategy to fully implement metaplasticity in optoelectronic devices and suggest their vision processing applications in complex lighting scenes.

Low-Power Perovskite Neuromorphic Synapse with Enhanced Photon Efficiency for Directional Motion Perception

The advancement of artificial intelligent vision systems heavily relies on the development of fast and accurate optical imaging detection, identification, and tracking. Framed by restricted response speeds and low computational efficiency, traditional optoelectronic information devices are facing challenges in real-time optical imaging tasks and their ability to efficiently process complex visual data. To address the limitations of current optoelectronic information devices, this study introduces a novel photomemristor utilizing halide perovskite thin films. The fabrication process involves adjusting the iodide proportion to enhance the quality of the halide perovskite films and minimize the dark current. The photomemristor exhibits a high external quantum efficiency of over 85%, which leads to a low energy consumption of 0.6 nJ. The spike timing-dependent plasticity characteristics of the device are leveraged to construct a spiking neural network and achieve a 99.1% accuracy rate of directional perception for moving objects. The notable results offer a promising hardware solution for efficient optoneuromorphic and edge computing applications.

Oxide Ionic Neuro-Transistors for Bio-inspired Computing

Current computing systems rely on Boolean logic and von Neumann architecture, where computing cells are based on high-speed electron-conducting complementary metal-oxide-semiconductor (CMOS) transistors. In contrast, ions play an essential role in biological neural computing. Compared with CMOS units, the synapse/neuron computing speed is much lower, but the human brain performs much better in many tasks such as pattern recognition and decision-making. Recently, ionic dynamics in oxide electrolyte-gated transistors have attracted increasing attention in the field of neuromorphic computing, which is more similar to the computing modality in the biological brain. In this review article, we start with the introduction of some ionic processes in biological brain computing. Then, electrolyte-gated ionic transistors, especially oxide ionic transistors, are briefly introduced. Later, we review the state-of-the-art progress in oxide electrolyte-gated transistors for ionic neuromorphic computing including dynamic synaptic plasticity emulation, spatiotemporal information processing, and artificial sensory neuron function implementation. Finally, we will address the current challenges and offer recommendations along with potential research directions.

Artificial Neuron Devices

Efforts to design devices emulating complex cognitive abilities and response processes of biological systems have long been a coveted goal. Recent advancements in flexible electronics, mirroring human tissue's mechanical properties, hold significant promise. Artificial neuron devices, hinging on flexible artificial synapses, bioinspired sensors, and actuators, are meticulously engineered to mimic the biological systems. However, this field is in its infancy, requiring substantial groundwork to achieve autonomous systems with intelligent feedback, adaptability, and tangible problem-solving capabilities. This review provides a comprehensive overview of recent advancements in artificial neuron devices. It starts with fundamental principles of artificial synaptic devices and explores artificial sensory systems, integrating artificial synapses and bioinspired sensors to replicate all five human senses. A systematic presentation of artificial nervous systems follows, designed to emulate fundamental human nervous system functions. The review also discusses potential applications and outlines existing challenges, offering insights into future prospects. We aim for this review to illuminate the burgeoning field of artificial neuron devices, inspiring further innovation in this captivating area of research.

Uniform multilevel switching and synaptic properties in RF-sputtered InGaZnO-based memristor treated with oxygen plasma

Bipolar gradual resistive switching was investigated in ITO/InGaZnO/ITO resistive switching devices. Controlled intrinsic oxygen vacancy formation inside the switching layer enabled the establishment of a stable multilevel memory state, allowing for RESET voltage control and non-degradable data endurance. The ITO/InGaZnO interface governs the migration of oxygen ions and redox reactions within the switching layer. Voltage-stress-induced electron trapping and oxygen vacancy formation were observed before conductive filament electroforming. This device mimicked biological synapses, demonstrating short- and long-term potentiation and depression through electrical pulse sequences. Modulation of post-synaptic currents and pulse frequency-dependent short-term potentiation were successfully emulated in the InGaZnO-based artificial synapse. The ITO/InGaZnO/ITO memristor exhibited spike-amplitude-dependent plasticity, spike-rate-dependent plasticity, and potentiation-depression synaptic learning with low energy consumption, making it a promising candidate for large-scale integration.

Emerging electrolyte-gated transistors for neuromorphic perception

With the rapid development of intelligent robotics, the Internet of Things, and smart sensor technologies, great enthusiasm has been devoted to developing next-generation intelligent systems for the emulation of advanced perception functions of humans. Neuromorphic devices, capable of emulating the learning, memory, analysis, and recognition functions of biological neural systems, offer solutions to intelligently process sensory information. As one of the most important neuromorphic devices, Electrolyte-gated transistors (EGTs) have shown great promise in implementing various vital neural functions and good compatibility with sensors. This review introduces the materials, operating principle, and performances of EGTs, followed by discussing the recent progress of EGTs for synapse and neuron emulation. Integrating EGTs with sensors that faithfully emulate diverse perception functions of humans such as tactile and visual perception is discussed. The challenges of EGTs for further development are given.

Recent advances in neuromorphic transistors for artificial perception applications: FOCUS ISSUE REVIEW

Conventional von Neumann architecture is insufficient in establishing artificial intelligence (AI) in terms of energy efficiency, computing in memory and dynamic learning. Delightedly, rapid developments in neuromorphic computing provide a new paradigm to solve this dilemma. Furthermore, neuromorphic devices that can realize synaptic plasticity and neuromorphic function have extraordinary significance for neuromorphic system. A three-terminal neuromorphic transistor is one of the typical representatives. In addition, human body has five senses, including vision, touch, auditory sense, olfactory sense and gustatory sense, providing abundant information for brain. Inspired by the human perception system, developments in artificial perception system will give new vitality to intelligent robots. This review discusses the operation mechanism, function and application of neuromorphic transistors. The latest progresses in artificial perception systems based on neuromorphic transistors are provided. Finally, the opportunities and challenges of artificial perception systems are summarized.

Forming-Free Tunable Analog Switching in WOx/TaOx Heterojunction for Emulating Electronic Synapses

In this work, the sputtered deposited WO_x/TaO_x switching layer has been studied for resistive random-access memory (RRAM) devices. Gradual SET and RESET behaviors with reliable device-to-device variability were obtained with DC voltage sweep cycling without an electroforming process. The memristor shows uniform switching characteristics, low switching voltages, and a high R_ON/R_OFF ratio (~10²). The transition from short-term plasticity (STP) to long-term potentiation (LTP) can be observed by increasing the pulse amplitude and number. Spike-rate-dependent plasticity (SRDP) and paired-pulse facilitation (PPF) learning processes were successfully emulated by sequential pulse trains. By reducing the pulse interval, the synaptic weight change increases due to the residual oxygen vacancy near the conductive filaments (CFs). This work explores mimicking the biological synaptic behavior and further development for next-generation neuromorphic applications.

Improved Resistive Switching with Low-Power Synaptic Behaviors of ZnO/Al2O3 Bilayer Structure

In this work, the resistive switching behavior of bilayer ZnO/Al₂O₃-based resistive-switching random access memory (RRAM) devices is demonstrated. The polycrystalline nature of the ZnO layer confirms the grain boundary, which helps easy oxygen ion diffusion. Multilevel resistance states were modulated under DC bias by varying the current compliance from 0.1 mA to 0.8 mA, the SET operations where the low resistance state of the memristor device was reduced from 25 kΩ to 2.4 kΩ. The presence of Al₂O₃ acts as a redox layer and facilitates oxygen vacancy exchange that demonstrates stable gradual conductance change. Stepwise disruption of conductive filaments was monitored depending on the slow DC voltage sweep rate. This is attributed to the atomic scale modulation of oxygen vacancies with four distinct reproducible quantized conductance states, which shows multilevel data storage capability. Moreover, several crucial synaptic properties such as potentiation/depression under identical presynaptic pulses and the spike-rate-dependent plasticity were implemented on ITO/ZnO/Al₂O₃/TaN memristor. The postsynaptic current change was monitored defining the long-term potentiation by increasing the presynaptic stimulus frequency from 5 Hz to 100 Hz. Moreover, the repetitive pulse voltage stimulation transformed the short-term plasticity to long-term plasticity during spike-number-dependent plasticity.

Synaptic plasticity in self-powered artificial striate cortex for binocular orientation selectivity

Get in-depth understanding of each part of visual pathway yields insights to conquer the challenges that classic computer vision is facing. Here, we first report the bioinspired striate cortex with binocular and orientation selective receptive field based on the crossbar array of self-powered memristors which is solution-processed monolithic all-perovskite system with each cross-point containing one CsFAPbI₃ solar cell directly stacking on the CsPbBr₂I memristor. The plasticity of self-powered memristor can be modulated by optical stimuli following triplet-STDP rules. Furthermore, plasticity of 3 × 3 flexible crossbar array of self-powered memristors has been successfully modulated based on generalized BCM learning rule for optical-encoded pattern recognition. Finally, we implemented artificial striate cortex with binocularity and orientation selectivity based on two simulated 9 × 9 self-powered memristors networks. The emulation of striate cortex with binocular and orientation selectivity will facilitate the brisk edge and corner detection for machine vision in the future applications.

Designing efficient bio-inspired vision systems remains a challenge. Here, the authors report a bio-inspired striate visual cortex with binocular and orientation selective receptive field based on self-powered memristor to enable machine vision with brisk edge and corner detection in the future applications.