1
|
Mitin D, Vorobyev A, Pavlov A, Berdnikov Y, Mozharov A, Mikhailovskii V, Ramirez B JA, Krasnikov DV, Kopylova DS, Kirilenko DA, Vinnichenko M, Polozkov R, Nasibulin AG, Mukhin I. Tuning the Optical Properties and Conductivity of Bundles in Networks of Single-Walled Carbon Nanotubes. J Phys Chem Lett 2022; 13:8775-8782. [PMID: 36103372 DOI: 10.1021/acs.jpclett.2c01931] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
The films of single-walled carbon nanotubes (SWCNTs) are a promising material for flexible transparent electrodes, which performance depends not only on the properties of individual nanotubes but also, foremost, on bundling of individual nanotubes. This work investigates the impact of densification on optical and electronic properties of SWCNT bundles and fabricated films. Our ab initio analysis shows that the optimally densified bundles, consisting of a mixture of quasi-metallic and semiconducting SWCNTs, demonstrate quasi-metallic behavior and can be considered as an effective conducting medium. Our density functional theory calculations indicate the band curving and bandgap narrowing with the reduction of the distance between nanotubes inside bundles. Simulation results are consistent with the observed conductivity improvement and shift of the absorption peaks in SWCNT films densified in isopropyl alcohol. Therefore, not only individual nanotubes but also the bundles should be considered as building blocks for high-performance transparent conductive SWCNT-based films.
Collapse
Affiliation(s)
- Dmitry Mitin
- Saint Petersburg Academic University, Khlopina, 8/3A, St. Petersburg 194021, Russia
- Peter the Great St. Petersburg Polytechnic University, Politekhnicheskaya 29, St. Petersburg 195251, Russia
| | - Alexandr Vorobyev
- Saint Petersburg Academic University, Khlopina, 8/3A, St. Petersburg 194021, Russia
| | - Alexander Pavlov
- Saint Petersburg Academic University, Khlopina, 8/3A, St. Petersburg 194021, Russia
- Peter the Great St. Petersburg Polytechnic University, Politekhnicheskaya 29, St. Petersburg 195251, Russia
| | - Yury Berdnikov
- St. Petersburg State University, Universitetskaya Emb. 13B, 199034 St. Petersburg, Russia
| | - Alexey Mozharov
- St. Petersburg State University, Universitetskaya Emb. 13B, 199034 St. Petersburg, Russia
| | - Vladimir Mikhailovskii
- St. Petersburg State University, Universitetskaya Emb. 13B, 199034 St. Petersburg, Russia
| | - Javier A Ramirez B
- Skolkovo Institute of Science and Technology, Nobel str. 3, Moscow 121205, Russia
| | - Dmitry V Krasnikov
- Skolkovo Institute of Science and Technology, Nobel str. 3, Moscow 121205, Russia
| | - Daria S Kopylova
- Skolkovo Institute of Science and Technology, Nobel str. 3, Moscow 121205, Russia
| | - Demid A Kirilenko
- Ioffe Institute, 26 Politekhnicheskaya, St Petersburg 194021, Russia
| | - Maxim Vinnichenko
- Peter the Great St. Petersburg Polytechnic University, Politekhnicheskaya 29, St. Petersburg 195251, Russia
| | - Roman Polozkov
- Saint Petersburg Academic University, Khlopina, 8/3A, St. Petersburg 194021, Russia
- Peter the Great St. Petersburg Polytechnic University, Politekhnicheskaya 29, St. Petersburg 195251, Russia
- ITMO University, St Petersburg 197101, Russia
| | - Albert G Nasibulin
- Skolkovo Institute of Science and Technology, Nobel str. 3, Moscow 121205, Russia
- Aalto University, P.O. Box 16100, FI-00076 Aalto, Espoo, Finland
| | - Ivan Mukhin
- Saint Petersburg Academic University, Khlopina, 8/3A, St. Petersburg 194021, Russia
- Peter the Great St. Petersburg Polytechnic University, Politekhnicheskaya 29, St. Petersburg 195251, Russia
| |
Collapse
|
2
|
Ilatovskii DA, Gilshtein EP, Glukhova OE, Nasibulin AG. Transparent Conducting Films Based on Carbon Nanotubes: Rational Design toward the Theoretical Limit. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2201673. [PMID: 35712777 PMCID: PMC9405519 DOI: 10.1002/advs.202201673] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/29/2022] [Revised: 05/22/2022] [Indexed: 05/19/2023]
Abstract
Electrically conductive thin-film materials possessing high transparency are essential components for many optoelectronic devices. The advancement in the transparent conductor applications requires a replacement of indium tin oxide (ITO), one of the key materials in electronics. ITO and other transparent conductive metal oxides have several drawbacks, including poor flexibility, high refractive index and haze, limited chemical stability, and depleted raw material supply. Single-walled carbon nanotubes (SWCNTs) are a promising alternative for transparent conducting films (TCFs) because of their unique and excellent chemical and physical properties. Here, the latest achievements in the optoelectronic performance of TCFs based on SWCNTs are analyzed. Various approaches to evaluate the performance of transparent electrodes are briefly reviewed. A roadmap for further research and development of the transparent conductors using "rational design," which breaks the deadlock for obtaining the TCFs with a performance close to the theoretical limit, is also described.
Collapse
Affiliation(s)
- Daniil A. Ilatovskii
- Skolkovo Institute of Science and TechnologyNobel Str. 3Moscow143026Russian Federation
| | - Evgeniia P. Gilshtein
- Empa‐Swiss Federal Laboratories for Materials Science and TechnologyÜberlandstrasse 129Dübendorf8600Switzerland
| | - Olga E. Glukhova
- Saratov State UniversityAstrakhanskaya Str. 83Saratov410012Russian Federation
- I.M. Sechenov First Moscow State Medical UniversityBolshaya Pirogovskaya Str. 2–4Moscow119991Russian Federation
| | - Albert G. Nasibulin
- Skolkovo Institute of Science and TechnologyNobel Str. 3Moscow143026Russian Federation
- Aalto UniversityEspooFI‐00076Finland
| |
Collapse
|
3
|
Miroshnichenko AS, Deriabin KV, Baeva M, Kochetkov FM, Neplokh V, Fedorov VV, Mozharov AM, Koval OY, Krasnikov DV, Sharov VA, Filatov NA, Gets DS, Nasibulin AG, Makarov SV, Mukhin IS, Kukushkin VY, Islamova RM. Flexible Perovskite CsPbBr 3 Light Emitting Devices Integrated with GaP Nanowire Arrays in Highly Transparent and Durable Functionalized Silicones. J Phys Chem Lett 2021; 12:9672-9676. [PMID: 34590867 DOI: 10.1021/acs.jpclett.1c02611] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
The architecture of transparent contacts is of utmost importance for creation of efficient flexible light-emitting devices (LEDs) and other deformable electronic devices. We successfully combined the newly synthesized transparent and durable silicone rubbers and the semiconductor materials with original fabrication methods to design LEDs and demonstrate their significant flexibility. We developed electrodes based on a composite GaP nanowire-phenylethyl-functionalized silicone rubber membrane, improved with single-walled carbon nanotube films for a hybrid poly(ethylene oxide)-metal-halide perovskite (CsPbBr3) flexible green LED. The proposed approach provides a novel platform for fabrication of flexible hybrid optoelectronic devices.
Collapse
Affiliation(s)
- Anna S Miroshnichenko
- Saint Petersburg State University, 7/9 Universitetskaya Nab., 199034 Saint Petersburg, Russian Federation
- ITMO University, 49 Kronverksky, 197101 Saint Petersburg, Russian Federation
- Saint Petersburg Academic University, 8/3 Khlopina, 194021 Saint Petersburg, Russian Federation
| | - Konstantin V Deriabin
- Saint Petersburg State University, 7/9 Universitetskaya Nab., 199034 Saint Petersburg, Russian Federation
| | - Maria Baeva
- ITMO University, 49 Kronverksky, 197101 Saint Petersburg, Russian Federation
- Saint Petersburg Academic University, 8/3 Khlopina, 194021 Saint Petersburg, Russian Federation
- Institute of Automation and Control Processes (IACP), Far Eastern Branch of Russian Academy of Sciences, 5 Ulitsa Radio, 690041 Vladivostok, Russian Federation
| | - Fedor M Kochetkov
- Saint Petersburg Academic University, 8/3 Khlopina, 194021 Saint Petersburg, Russian Federation
| | - Vladimir Neplokh
- Saint Petersburg Academic University, 8/3 Khlopina, 194021 Saint Petersburg, Russian Federation
- Peter the Great St. Petersburg Polytechnic University, 29 Polytechnicheskaya, 195251 Saint Petersburg, Russian Federation
| | - Vladimir V Fedorov
- Saint Petersburg Academic University, 8/3 Khlopina, 194021 Saint Petersburg, Russian Federation
- Peter the Great St. Petersburg Polytechnic University, 29 Polytechnicheskaya, 195251 Saint Petersburg, Russian Federation
| | - Alexey M Mozharov
- Saint Petersburg Academic University, 8/3 Khlopina, 194021 Saint Petersburg, Russian Federation
| | - Olga Yu Koval
- Saint Petersburg Academic University, 8/3 Khlopina, 194021 Saint Petersburg, Russian Federation
| | - Dmitry V Krasnikov
- Skolkovo Institute of Science and Technology, 30/1 Bolshoy Boulevard, 121205 Moscow, Russian Federation
| | - Vlad A Sharov
- Saint Petersburg Academic University, 8/3 Khlopina, 194021 Saint Petersburg, Russian Federation
| | - Nikita A Filatov
- Saint Petersburg Academic University, 8/3 Khlopina, 194021 Saint Petersburg, Russian Federation
| | - Dmitry S Gets
- ITMO University, 49 Kronverksky, 197101 Saint Petersburg, Russian Federation
| | - Albert G Nasibulin
- Skolkovo Institute of Science and Technology, 30/1 Bolshoy Boulevard, 121205 Moscow, Russian Federation
- Aalto University, P.O. Box 151100, Espoo FI-00076, Finland
| | - Sergey V Makarov
- ITMO University, 49 Kronverksky, 197101 Saint Petersburg, Russian Federation
| | - Ivan S Mukhin
- ITMO University, 49 Kronverksky, 197101 Saint Petersburg, Russian Federation
- Saint Petersburg Academic University, 8/3 Khlopina, 194021 Saint Petersburg, Russian Federation
- Peter the Great St. Petersburg Polytechnic University, 29 Polytechnicheskaya, 195251 Saint Petersburg, Russian Federation
| | - Vadim Yu Kukushkin
- Saint Petersburg State University, 7/9 Universitetskaya Nab., 199034 Saint Petersburg, Russian Federation
- South Ural State University, 76 Lenin Avenue, 454080 Chelyabinsk, Russian Federation
| | - Regina M Islamova
- Saint Petersburg State University, 7/9 Universitetskaya Nab., 199034 Saint Petersburg, Russian Federation
| |
Collapse
|
4
|
Direct Fabrication of Micron-Thickness PVA-CNT Patterned Films by Integrating Micro-Pen Writing of PVA Films and Drop-on-Demand Printing of CNT Micropatterns. NANOMATERIALS 2021; 11:nano11092335. [PMID: 34578653 PMCID: PMC8466232 DOI: 10.3390/nano11092335] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/18/2021] [Revised: 09/03/2021] [Accepted: 09/06/2021] [Indexed: 01/04/2023]
Abstract
The direct fabrication of micron-thickness patterned electronics consisting of patterned PVA films and CNT micropatterns still faces considerable challenges. Here, we demonstrated the integrated fabrication of PVA films of micron-thickness and CNT-based patterns by utilising micro-pen writing and drop-on-demand printing in sequence. Patterned PVA films of 1-5 μm in thickness were written first using proper micro-pen writing parameters, including the writing gap, the substrate moving velocity, and the working pressure. Then, CNT droplets were printed on PVA films that were cured at 55-65 °C for 3-15 min, resulting in neat CNT patterns. In addition, an inertia-pseudopartial wetting spreading model was established to release the dynamics of the droplet spreading process over thin viscoelastic films. Uniform and dense CNT lines with a porosity of 2.2% were printed on PVA substrates that were preprocessed at 55 °C for 9 min using a staggered overwriting method with the proper number of layers. Finally, we demonstrated the feasibility of this hybrid printing method by printing a patterned PVA-CNT film and a micro-ribbon. This study provides a valid method for directly fabricating micron-thickness PVA-CNT electronics. The proposed method can also provide guidance on the direct writing of other high-molecular polymer materials and printing inks of other nanosuspensions.
Collapse
|