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Lee EJ, Lee W, Yun TH, You HR, Kim HJ, Yu HN, Kim SK, Kim Y, Ahn H, Lim J, Yim C, Choi J. Suppression of Thermally Induced Surface Traps in Colloidal Quantum Dot Solids via Ultrafast Pulsed Light. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2400380. [PMID: 38564784 DOI: 10.1002/smll.202400380] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/16/2024] [Revised: 03/11/2024] [Indexed: 04/04/2024]
Abstract
Thermal annealing (TA) of colloidal quantum dot (CQD) films is considered an important process for recent high-performing CQD solar cells (SCs) due to its beneficial effects on CQD solids, including enhanced electrical conductivity, denser packing of CQD films, and the removal of organic residues and solvents. However, the conventional TA for CQDs, which requires several minutes, leads to hydroxylation and oxidation on the CQD surface, resulting in the formation of trap states and a subsequent decline in SC performance. To address these challenges, this study introduces a flashlight annealing (FLA) technique that significantly reduces the annealing time to the millisecond scale. Through the FLA approach, it successfully suppressed hydroxylation and oxidation, resulting in decreased trap states within the CQD solids while simultaneously preserving their charge transport properties. As a result, CQD SCs treated with FLA exhibited a notable improvement, achieving an open-circuit voltage of 0.66 V compared to 0.63 V in TA-treated devices, leading to an increase in power conversion efficiency from 12.71% to 13.50%.
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Affiliation(s)
- Eon Ji Lee
- Department of Energy Science and Engineering, Daegu Gyeongbuk Institute of Science and Technology (DGIST), 333 Techno Jungang-Daero, Hyeonpung-Eup, Dalseong-Gun, Daegu, 42988, Republic of Korea
| | - Wonjong Lee
- Graduate School of Energy Science and Technology, Chungnam National University (CNU), 99, Daehak-ro, Yuseong-gu, Daejeon, 34134, Republic of Korea
| | - Tae Ho Yun
- Department of Precision Mechanical Engineering, Kyungpook National University (KNU), 2559 Gyeongsang-daero, Sangju-si, Gyeongbuk, 37224, Republic of Korea
| | - Hyung Ryul You
- Department of Energy Science and Engineering, Daegu Gyeongbuk Institute of Science and Technology (DGIST), 333 Techno Jungang-Daero, Hyeonpung-Eup, Dalseong-Gun, Daegu, 42988, Republic of Korea
| | - Hae Jeong Kim
- Department of Energy Science and Engineering, Daegu Gyeongbuk Institute of Science and Technology (DGIST), 333 Techno Jungang-Daero, Hyeonpung-Eup, Dalseong-Gun, Daegu, 42988, Republic of Korea
| | - Han Na Yu
- Department of Energy Science and Engineering, Daegu Gyeongbuk Institute of Science and Technology (DGIST), 333 Techno Jungang-Daero, Hyeonpung-Eup, Dalseong-Gun, Daegu, 42988, Republic of Korea
| | - Soo-Kwan Kim
- Department of Energy Science and Engineering, Daegu Gyeongbuk Institute of Science and Technology (DGIST), 333 Techno Jungang-Daero, Hyeonpung-Eup, Dalseong-Gun, Daegu, 42988, Republic of Korea
| | - Younghoon Kim
- Department of Applied Chemistry, Kookmin University (KMU), Seoul, 02707, Republic of Korea
| | - Hyungju Ahn
- Pohang Accelerator Laboratory (PAL), 80, Jigok-ro 127 beon-gil, Nam-gu, Gyeongsangbuk-do, Pohang-si, 37673, Republic of Korea
| | - Jongchul Lim
- Graduate School of Energy Science and Technology, Chungnam National University (CNU), 99, Daehak-ro, Yuseong-gu, Daejeon, 34134, Republic of Korea
| | - Changyong Yim
- Department of Energy Chemical Engineering, Kyungpook National University (KNU), 2559 Gyeongsang-daero, Sangju-si, Gyeongbuk, 37224, Republic of Korea
- Convergence Research Center of Mechanical and Chemical Engineering (CRCMCE), Kyungpook National University (KNU), 2559 Gyeongsang-daero, Sangju-si, Gyeongbuk, 37224, Republic of Korea
- Department of Advanced Science and Technology Convergence, Kyungpook National University (KNU), 2559 Gyeongsang-daero, Sangju-si, Gyeongbuk, 37224, Republic of Korea
| | - Jongmin Choi
- Department of Energy Science and Engineering, Daegu Gyeongbuk Institute of Science and Technology (DGIST), 333 Techno Jungang-Daero, Hyeonpung-Eup, Dalseong-Gun, Daegu, 42988, Republic of Korea
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Kim C, Kozakci I, Lee SY, Kim B, Kim J, Lee J, Ma BS, Oh ES, Kim TS, Lee JY. Quantum Dot-Siloxane Anchoring on Colloidal Quantum Dot Film for Flexible Photovoltaic Cell. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2302195. [PMID: 37300352 DOI: 10.1002/smll.202302195] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/15/2023] [Revised: 04/15/2023] [Indexed: 06/12/2023]
Abstract
Lead sulfide (PbS) colloidal quantum dots (CQDs) are promising materials for next-generation flexible solar cells because of near-infrared absorption, facile bandgap tunability, and superior air stability. However, CQD devices still lack enough flexibility to be applied to wearable devices owing to the poor mechanical properties of CQD films. In this study, a facile approach is proposed to improve the mechanical stability of CQDs solar cells without compromising the high power conversion efficiency (PCE) of the devices. (3-aminopropyl)triethoxysilane (APTS) is introduced on CQD films to strengthen the dot-to-dot bonding via QD-siloxane anchoring, and as a result, crack pattern analysis reveals that the treated devices become robust to mechanical stress. The device maintains 88% of the initial PCE under 12 000 cycles at a bending radius of 8.3 mm. In addition, APTS forms a dipole layer on CQD films, which improves the open circuit voltage (VOC ) of the device, achieving a PCE of 11.04%, one of the highest PCEs in flexible PbS CQD solar cells.
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Affiliation(s)
- Changjo Kim
- School of Electrical Engineering (EE), Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Irem Kozakci
- School of Electrical Engineering (EE), Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Sang Yeon Lee
- Information and Electronics Research Institute, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Byeongsu Kim
- School of Electrical Engineering (EE), Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Junho Kim
- School of Electrical Engineering (EE), Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Jihyung Lee
- School of Electrical Engineering (EE), Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Boo Soo Ma
- Department of Mechanical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Eun Sung Oh
- Department of Mechanical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Taek-Soo Kim
- Department of Mechanical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
| | - Jung-Yong Lee
- School of Electrical Engineering (EE), Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea
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Lee J, Kim B, Kim C, Lee MH, Kozakci I, Cho S, Kim B, Lee SY, Kim J, Oh J, Lee JY. Unlocking the Potential of Colloidal Quantum Dot/Organic Hybrid Solar Cells: Band Tunable Interfacial Layer Approach. ACS APPLIED MATERIALS & INTERFACES 2023; 15:39408-39416. [PMID: 37555937 DOI: 10.1021/acsami.3c08419] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/10/2023]
Abstract
Hybrid colloidal quantum dot (CQD)/organic architectures are promising candidates for emerging optoelectronic devices having high performance and inexpensive fabrication. For unlocking the potential of CQD/organic hybrid devices, enhancing charge extraction properties at electron transport layer (ETL)/CQD interfaces is crucial. Hence, we carefully adjust the interface properties between the ETL and CQD layer by incorporating an interfacial layer for the ETL (EIL) using several types of cinnamic acid ligands. The EIL having a cascading band offset (ΔEC) between the ETL and CQD layer suppresses the potential barrier and the local charge accumulation at ETL/CQD interfaces, thereby reducing the bimolecular recombination. An optimal EIL effectively expands the depletion region that facilitates charge extraction between the ETL and CQD layer while preventing the formation of shallow traps. Representative devices with an EIL exhibit a maximum power conversion efficiency of 14.01% and retain over 80% of initial performances after 300 h under continuous maximum power point operation.
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Affiliation(s)
- Jihyung Lee
- School of Electrical Engineering (EE), Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Byeongsu Kim
- School of Electrical Engineering (EE), Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Changjo Kim
- Information and Electronics Research Institute, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Min-Ho Lee
- School of Electrical Engineering (EE), Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Irem Kozakci
- School of Electrical Engineering (EE), Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Sungjun Cho
- School of Electrical Engineering (EE), Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Beomil Kim
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Sang Yeon Lee
- Information and Electronics Research Institute, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Junho Kim
- School of Electrical Engineering (EE), Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Jihun Oh
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Jung-Yong Lee
- School of Electrical Engineering (EE), Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
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Kim J, Seo K, Lee S, Kim K, Kim C, Lee J. All-in-One Process for Color Tuning and Patterning of Perovskite Quantum Dot Light-Emitting Diodes. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2200073. [PMID: 35233994 PMCID: PMC9069357 DOI: 10.1002/advs.202200073] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/28/2022] [Indexed: 05/05/2023]
Abstract
Although post-synthetic anion exchange allows halide perovskite quantum dots to easily change the optical bandgap of materials, additional exchange of shorter ligands is required to use them as active materials in optoelectronic devices. In this study, a novel all-in-one process exchanging ligands and halide anions in film-state for facile color tuning and patterning of cesium lead halide perovskite colloidal quantum dot (PeQD) light-emitting diodes (LEDs) is proposed. The proposed all-in-one process significantly enhances the performances of PeQD LEDs by passivating the PeQD with shorter ligands. In addition, the all-in-one process is repeated more stably in the film state. Red, green, and blue LEDs with extremely narrow emission spectra using cesium lead bromide PeQDs and appropriate butylammonium halide solutions are fabricated. Furthermore, the proposed all-in-one process in film-state facilitated rapid color change in localized areas, thereby aiding in realizing fine patterns of narrow widths (300 µm) using simple contact masks. Consequently, various paint-over red/green/blue patterns in PeQD LEDs by applying halide solutions additively are fabricated.
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Affiliation(s)
- Junho Kim
- School of Electrical Engineering (EE)Korea Advanced Institute of Science and Technology (KAIST)291 Daehak‐ro, Yuseong‐guDaejeon34141Republic of Korea
| | - Ki‐Won Seo
- School of Electrical Engineering (EE)Korea Advanced Institute of Science and Technology (KAIST)291 Daehak‐ro, Yuseong‐guDaejeon34141Republic of Korea
| | - SeungJae Lee
- School of Electrical Engineering (EE)Korea Advanced Institute of Science and Technology (KAIST)291 Daehak‐ro, Yuseong‐guDaejeon34141Republic of Korea
| | - Kyungmin Kim
- School of Electrical Engineering (EE)Korea Advanced Institute of Science and Technology (KAIST)291 Daehak‐ro, Yuseong‐guDaejeon34141Republic of Korea
| | - Changjo Kim
- School of Electrical Engineering (EE)Korea Advanced Institute of Science and Technology (KAIST)291 Daehak‐ro, Yuseong‐guDaejeon34141Republic of Korea
| | - Jung‐Yong Lee
- School of Electrical Engineering (EE)Korea Advanced Institute of Science and Technology (KAIST)291 Daehak‐ro, Yuseong‐guDaejeon34141Republic of Korea
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Liu X, Fu T, Liu J, Wang Y, Jia Y, Wang C, Li X, Zhang X, Liu Y. Solution Annealing Induces Surface Chemical Reconstruction for High-Efficiency PbS Quantum Dot Solar Cells. ACS APPLIED MATERIALS & INTERFACES 2022; 14:14274-14283. [PMID: 35289178 DOI: 10.1021/acsami.2c01196] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Colloidal quantum dots (CQDs) have a large specific surface area and a complex surface structure. Their properties in diverse optoelectronic applications are largely determined by their surface chemistry. Therefore, it is essential to investigate the surface chemistry of CQDs for improving device performance. Herein, we realized an efficient surface chemistry optimization of lead sulfide (PbS) CQDs for photovoltaics by annealing the CQD solution with concentrated lead halide ligands after the conventional solution-phase ligand exchange. During the annealing process, the colloidal solution was used to transfer heat and create a secondary reaction environment, promoting the desorption of electrically insulating oleate ligands as well as the trap-related surface groups (Pb-hydroxyl and oxidized Pb species). This was accompanied by the binding of more conductive lead halide ligands on the CQD surface, eventually achieving a more complete ligand exchange. Furthermore, this strategy also minimized CQD polydispersity and decreased aggregation caused by conventional solution-phase ligand exchange, thereby contributing to yielding CQD films with twofold enhanced carrier mobility and twofold reduced trap-state density compared with those of the control. Based on these merits, the fabricated PbS CQD solar cells showed high efficiency of 11% under ambient conditions. Our strategy opens a novel and effective avenue to obtain high-efficiency CQD solar cells with diverse band gaps, providing meaningful guidance for controlling ligand reactivity and realizing subtly purified CQDs.
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Affiliation(s)
- Xinlu Liu
- Center for Advanced Optoelectronic Functional Materials Research, and Key Laboratory of UV Light-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun 130024, Jilin, P. R. China
| | - Ting Fu
- Center for Advanced Optoelectronic Functional Materials Research, and Key Laboratory of UV Light-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun 130024, Jilin, P. R. China
| | - Jianping Liu
- Center for Advanced Optoelectronic Functional Materials Research, and Key Laboratory of UV Light-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun 130024, Jilin, P. R. China
| | - Yinglin Wang
- Center for Advanced Optoelectronic Functional Materials Research, and Key Laboratory of UV Light-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun 130024, Jilin, P. R. China
| | - Yuwen Jia
- Center for Advanced Optoelectronic Functional Materials Research, and Key Laboratory of UV Light-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun 130024, Jilin, P. R. China
| | - Chao Wang
- Center for Advanced Optoelectronic Functional Materials Research, and Key Laboratory of UV Light-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun 130024, Jilin, P. R. China
| | - Xiaofei Li
- Center for Advanced Optoelectronic Functional Materials Research, and Key Laboratory of UV Light-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun 130024, Jilin, P. R. China
| | - Xintong Zhang
- Center for Advanced Optoelectronic Functional Materials Research, and Key Laboratory of UV Light-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun 130024, Jilin, P. R. China
| | - Yichun Liu
- Center for Advanced Optoelectronic Functional Materials Research, and Key Laboratory of UV Light-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun 130024, Jilin, P. R. China
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