Temperature-Dependent Charge Carrier Transfer in Colloidal Quantum Dot/Graphene Infrared Photodetectors

Probing the Critical Role of Interfaces for Superior Performance in PbS Quantum Dot/Graphene Nanohybrid Broadband Photodetectors

Colloidal quantum dots/graphene (QD/Gr) nanohybrids have been studied intensively for photodetection in a broadband spectrum including ultraviolet, visible, near-infrared, and shortwave infrared (UV-vis-NIR-SWIR). Since the optoelectronic process in the QD/Gr nanohybrid relies on the photogenerated charge carrier transfer from QDs to graphene, understanding the role of the QD-QD and QD-Gr interfaces is imperative to the QD/Gr nanohybrid photodetection. Herein, a systematic study is carried out to probe the effect of these interfaces on the noise, photoresponse, and specific detectivity in the UV-vis-NIR-SWIR spectrum. Interestingly, the photoresponse has been found to be negligible without a 3-mercaptopropionic acid (MPA) ligand exchange, moderate with a single ligand exchange after all QD layers are deposited on graphene, and maximum if it is performed after each QD layer deposition up to five layers of total QD thickness of 260-280 nm. Furthermore, exposure of graphene to C-band UV (UVC) for a short period of 4-5 min before QD deposition leads to improved photoresponse via removal of polar molecules at the QD/Gr interface. With the combination of the MPA ligand exchange and UVC exposure, optimal optoelectronic properties can be obtained on the PbS QD/Gr nanohybrids with high specific detectivity up to 2.6 × 1011, 1.5 × 1011, 5 × 1010, and 1.9 × 109 Jones at 400, 550, 1000, and 1700 nm, respectively, making the nanohybrids promising for broadband photodetection.

Recent advances in quantum dot-based fluorescence-linked immunosorbent assays

Fluorescence immunoassays have been given considerable attention among the quantitative detection methods in the clinical medicine and food safety testing fields. In particular, semiconductor quantum dots (QDs) have become ideal fluorescent probes for highly sensitive and multiplexed detection due to their unique photophysical properties, and the QD fluorescence-linked immunosorbent assay (FLISA) with high sensitivity, high accuracy, and high throughput has been greatly developed recently. In this manuscript, the advantages of applying QDs to FLISA platforms and some strategies for their application to in vitro diagnostics and food safety are discussed. Given the rapid development of this field, we classify these strategies based on the combination of QD types and detection targets, including traditional QDs or QD micro/nano-spheres-FLISA, and multiple FLISA platforms. In addition, some new sensors based on the QD-FLISA are introduced; this is one of the hot spots in this field. The current focus and future direction of QD-FLISA are also discussed, which provides important guidance for the further development of FLISA.

Ultrasensitive Colloidal Quantum-Dot Upconverters for Extended Short-Wave Infrared

Infrared-to-visible upconverters converting low-energy infrared to higher-energy visible light without bringing in complicated readout integrated circuits have triggered enormous excitement. However, existing upconverters suffer from limited sensing wavelengths, low photon-to-photon (p-p) efficiency, and high minimum detectable infrared power. Here, we reported the colloidal quantum-dot (CQD) upconverters with unprecedented performance. By using HgTe CQDs as the sensing layer, the operation spectral ranges of the upconverters are, for the first time, extended to short-wave infrared. More importantly, the resistance-area products of the HgTe CQD photodetectors are carefully optimized by interface engineering to match with the visible light-emitting diodes so that the quantum efficiency and sensitivity of upconverters can be maximized. The integrated upconverters demonstrate a high p-p efficiency of nearly 30% and a low detection limit down to 20 μW cm^-2.

MoS2/WSe2 vdW Heterostructures Decorated with PbS Quantum Dots for the Development of High-Performance Photovoltaic and Broadband Photodiodes

van der Waals heterostructures (vdWHs) overcoming the lattice and processing limitations of conventional heterostructures provide an opportunity to develop high-performance 2D vdWH solar cells and photodiodes. However, it is challenging to improve the sensitivity and response speed of 2D vdWH photovoltaic devices due to the low light absorption efficiency and electron/hole traps in heterointerfaces. Here, we design a PbS/MoS₂/WSe₂ heterostructure photodiode in which a light-sensitive PbS quantum dot (QD) layer combined with a MoS₂/WSe₂ heterostructure significantly enhances the photovoltaic response. The electron current in the heterostructure is increased by the effective collection of photogenerated electrons induced by PbS QDs. The device exhibits a broadband photovoltaic response from 405 to 1064 nm with a maximum responsivity of 0.76 A/W and a specific detectivity of 5.15 × 10¹¹ Jones. In particular, the response speed is not limited by multiple electron traps in the PbS QDs/2D material heterointerface, and a fast rising/decaying time of 43/48 μs and a -3 dB cutoff frequency of over 10 kHz are achieved. The negative differential capacitance and frequency dependence of capacitance demonstrate the presence of interface states in the MoS₂/WSe₂ heterointerface that hamper the improvement of the response speed. The scheme to enhance photovoltaic performance without sacrificing response speed provides opportunities for the development of high-performance 2D vdWH optoelectronic devices.

Two-Dimensional Field-Effect Transistor Sensors: The Road toward Commercialization

The evolutionary success in information technology has been sustained by the rapid growth of sensor technology. Recently, advances in sensor technology have promoted the ambitious requirement to build intelligent systems that can be controlled by external stimuli along with independent operation, adaptivity, and low energy expenditure. Among various sensing techniques, field-effect transistors (FETs) with channels made of two-dimensional (2D) materials attract increasing attention for advantages such as label-free detection, fast response, easy operation, and capability of integration. With atomic thickness, 2D materials restrict the carrier flow within the material surface and expose it directly to the external environment, leading to efficient signal acquisition and conversion. This review summarizes the latest advances of 2D-materials-based FET (2D FET) sensors in a comprehensive manner that contains the material, operating principles, fabrication technologies, proof-of-concept applications, and prototypes. First, a brief description of the background and fundamentals is provided. The subsequent contents summarize physical, chemical, and biological 2D FET sensors and their applications. Then, we highlight the challenges of their commercialization and discuss corresponding solution techniques. The following section presents a systematic survey of recent progress in developing commercial prototypes. Lastly, we summarize the long-standing efforts and prospective future development of 2D FET-based sensing systems toward commercialization.

Low-Temperature Induced Enhancement of Photoelectric Performance in Semiconducting Nanomaterials

The development of light-electricity conversion in nanomaterials has drawn intensive attention to the topic of achieving high efficiency and environmentally adaptive photoelectric technologies. Besides traditional improving methods, we noted that low-temperature cooling possesses advantages in applicability, stability and nondamaging characteristics. Because of the temperature-related physical properties of nanoscale materials, the working mechanism of cooling originates from intrinsic characteristics, such as crystal structure, carrier motion and carrier or trap density. Here, emerging advances in cooling-enhanced photoelectric performance are reviewed, including aspects of materials, performance and mechanisms. Finally, potential applications and existing issues are also summarized. These investigations on low-temperature cooling unveil it as an innovative strategy to further realize improvement to photoelectric conversion without damaging intrinsic components and foresee high-performance applications in extreme conditions.